JP2009013417A5 - - Google Patents

Download PDF

Info

Publication number
JP2009013417A5
JP2009013417A5 JP2008203642A JP2008203642A JP2009013417A5 JP 2009013417 A5 JP2009013417 A5 JP 2009013417A5 JP 2008203642 A JP2008203642 A JP 2008203642A JP 2008203642 A JP2008203642 A JP 2008203642A JP 2009013417 A5 JP2009013417 A5 JP 2009013417A5
Authority
JP
Japan
Prior art keywords
cleaning solution
acid
ascorbic acid
solution according
corrosion inhibitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008203642A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009013417A (ja
JP5097640B2 (ja
Filing date
Publication date
Priority claimed from US09/781,859 external-priority patent/US6723691B2/en
Application filed filed Critical
Publication of JP2009013417A publication Critical patent/JP2009013417A/ja
Publication of JP2009013417A5 publication Critical patent/JP2009013417A5/ja
Application granted granted Critical
Publication of JP5097640B2 publication Critical patent/JP5097640B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2008203642A 2001-02-12 2008-08-06 化学機械平坦化（ｃｍｐ）後の洗浄組成物 Expired - Lifetime JP5097640B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/781,859 2001-02-12
US09/781,859 US6723691B2 (en) 1999-11-16 2001-02-12 Post chemical-mechanical planarization (CMP) cleaning composition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002564755A Division JP2004518819A (ja) 2001-02-12 2002-02-06 化学機械平坦化（ｃｍｐ）後の洗浄組成物

Publications (3)

Publication Number Publication Date
JP2009013417A JP2009013417A (ja) 2009-01-22
JP2009013417A5 true JP2009013417A5 (enExample) 2009-11-12
JP5097640B2 JP5097640B2 (ja) 2012-12-12

Family

ID=25124179

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002564755A Withdrawn JP2004518819A (ja) 2001-02-12 2002-02-06 化学機械平坦化（ｃｍｐ）後の洗浄組成物
JP2008203642A Expired - Lifetime JP5097640B2 (ja) 2001-02-12 2008-08-06 化学機械平坦化（ｃｍｐ）後の洗浄組成物

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2002564755A Withdrawn JP2004518819A (ja) 2001-02-12 2002-02-06 化学機械平坦化（ｃｍｐ）後の洗浄組成物

Country Status (7)

Country Link
US (1) US6723691B2 (enExample)
EP (2) EP1360712B9 (enExample)
JP (2) JP2004518819A (enExample)
AT (1) ATE373873T1 (enExample)
DE (1) DE60222532T2 (enExample)
TW (1) TWI299885B (enExample)
WO (1) WO2002065538A2 (enExample)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US20030138737A1 (en) * 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same
KR100913557B1 (ko) * 2002-01-28 2009-08-21 미쓰비시 가가꾸 가부시키가이샤 반도체 디바이스용 기판의 세정액 및 세정방법
JP4221191B2 (ja) 2002-05-16 2009-02-12 関東化学株式会社 Ｃｍｐ後洗浄液組成物
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20050247675A1 (en) * 2004-05-04 2005-11-10 Texas Instruments Incorporated Treatment of dies prior to nickel silicide formation
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
JP2006016438A (ja) * 2004-06-30 2006-01-19 Dongwoo Fine-Chem Co Ltd 電子部品洗浄液
US7718009B2 (en) * 2004-08-30 2010-05-18 Applied Materials, Inc. Cleaning submicron structures on a semiconductor wafer surface
US20060073997A1 (en) * 2004-09-30 2006-04-06 Lam Research Corporation Solutions for cleaning silicon semiconductors or silicon oxides
KR100628215B1 (ko) * 2004-12-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
KR20060075315A (ko) * 2004-12-28 2006-07-04 동부일렉트로닉스 주식회사 반도체 소자 제조용 구리 화합물 이물질 제거를 위한 세정방법
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI393178B (zh) * 2005-01-27 2013-04-11 Advanced Tech Materials 半導體基板處理用之組成物
US7476620B2 (en) * 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US7365045B2 (en) 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US7939482B2 (en) 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
JP2008543060A (ja) * 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
EP2687589A3 (en) * 2005-05-26 2014-05-07 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
KR101477455B1 (ko) * 2005-06-07 2014-12-29 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 및 유전체 상용성 희생 반사 방지 코팅 세정 및 제거 조성물
JP2008547202A (ja) * 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法
JP4652157B2 (ja) * 2005-07-06 2011-03-16 花王株式会社 銅又は銅合金用洗浄剤組成物
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
KR101152139B1 (ko) * 2005-12-06 2012-06-15 삼성전자주식회사 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
WO2007125634A1 (ja) * 2006-03-31 2007-11-08 Sanyo Chemical Industries, Ltd. 銅配線用洗浄剤
JP5101046B2 (ja) * 2006-06-14 2012-12-19 三洋化成工業株式会社 液晶パネル用配向膜の剥離液
US7538969B2 (en) * 2006-08-23 2009-05-26 Imation Corp. Servo pattern with encoded data
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR101561708B1 (ko) * 2007-05-17 2015-10-19 인티그리스, 인코포레이티드 Ｃｍｐ후 세정 제제용 신규한 항산화제
DE102007058829A1 (de) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
US8580656B2 (en) 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
WO2010048139A2 (en) 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
WO2010086893A1 (ja) * 2009-01-27 2010-08-05 三洋化成工業株式会社 銅配線半導体用洗浄剤
US20100215841A1 (en) 2009-02-20 2010-08-26 E.I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US20110045203A1 (en) * 2009-08-21 2011-02-24 E. I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
JP5646882B2 (ja) 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
JP5858597B2 (ja) * 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド タングステン配線半導体用洗浄剤
JP5702075B2 (ja) * 2010-03-26 2015-04-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅配線半導体用洗浄剤
WO2011094568A2 (en) 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
KR101696390B1 (ko) * 2010-06-08 2017-01-13 주식회사 동진쎄미켐 Ｔｆｔ-ｌｃｄ 또는 반도체 소자용 세정제 조성물
US8883701B2 (en) * 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
JP6215511B2 (ja) * 2010-07-16 2017-10-18 栗田工業株式会社 ボイラ用防食剤
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
US9831088B2 (en) 2010-10-06 2017-11-28 Entegris, Inc. Composition and process for selectively etching metal nitrides
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
US20130053291A1 (en) * 2011-08-22 2013-02-28 Atsushi Otake Composition for cleaning substrates post-chemical mechanical polishing
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
KR20140139565A (ko) * 2012-03-18 2014-12-05 인티그리스, 인코포레이티드 개선된 장벽층 상용성 및 세정 성능을 가진 cmp-후 배합물
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
EP2850651A4 (en) * 2012-05-18 2016-03-09 Entegris Inc AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES
TWI572711B (zh) 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
KR101261599B1 (ko) 2012-10-23 2013-05-06 (주)아이리스 친환경 장비 세척제 및 이의 제조방법
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
CN103513522B (zh) * 2013-09-25 2018-06-01 青岛果子科技服务平台有限公司 半导体清洗组合物
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
DE102014105823A1 (de) * 2014-04-25 2015-10-29 Harting Kgaa Nachreinigungsverfahren von metallischen Kontaktelementen
US10100272B2 (en) * 2014-07-18 2018-10-16 Cabot Microelectronics Corporation Cleaning composition following CMP and methods related thereto
TWI726859B (zh) * 2015-01-05 2021-05-11 美商恩特葛瑞斯股份有限公司 後化學機械拋光配方及使用之方法
JP2015099938A (ja) * 2015-02-19 2015-05-28 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅配線半導体用洗浄剤
CN106634595B (zh) * 2016-11-02 2018-06-08 卓聪（上海）环保科技发展有限公司 一种自净环保型通信设备在线养护剂及其制备方法
JP6966570B2 (ja) 2017-04-11 2021-11-17 インテグリス・インコーポレーテッド 化学機械研磨後配合物及び使用方法
CN112602175B (zh) 2018-08-30 2025-03-11 三菱化学株式会社 清洗液、清洗方法和半导体晶片的制造方法
JP7628116B2 (ja) 2019-09-27 2025-02-07 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ポストエッチング残留物を除去するための組成物、その組成物を使用する方法、及びその組成物の使用
WO2021210308A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、洗浄方法
JP7739305B2 (ja) * 2020-09-04 2025-09-16 花王株式会社 基板の洗浄方法
CN113186539B (zh) * 2021-04-27 2022-12-06 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液及其制备方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
CN113774392B (zh) * 2021-08-12 2023-12-01 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
KR20240002608A (ko) 2022-06-29 2024-01-05 삼성전자주식회사 기판 세정 장비
CN117946812A (zh) * 2022-10-18 2024-04-30 安集微电子科技（上海）股份有限公司 一种清洗组合物

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168989A (en) 1975-06-10 1979-09-25 Westinghouse Electric Corp. Stripping composition for thermoset resins and method of repairing electrical apparatus
US4294729A (en) 1979-12-17 1981-10-13 International Business Machines Corporation Composition containing alcohol and use thereof for epoxy removal
US4487708A (en) 1980-07-14 1984-12-11 Betz Laboratories, Inc. Hydroquinone oxygen scavenger for use in aqueous mediums
US4395348A (en) 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
JPS59219743A (ja) 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
US4617251A (en) 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
DE3523088A1 (de) 1985-06-28 1987-01-08 Hoechst Ag Verfahren zur vermeidung der korrosion metallischer werkstoffe
JPH0626708B2 (ja) 1985-09-10 1994-04-13 関西ペイント株式会社 複合塗膜形成法
DE3537441A1 (de) 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
US4744834A (en) 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
US5190723A (en) 1988-02-25 1993-03-02 Ciba-Geigy Corporation Process for inhibiting corrosion
US5143648A (en) 1989-07-20 1992-09-01 Nippon Hypox Laboratories Incorporated Ascorbic acid derivative and use as antioxidant
US5091103A (en) 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5496491A (en) 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
JP3160344B2 (ja) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5988186A (en) 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
US5556482A (en) 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US5753601A (en) 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5308745A (en) 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407788A (en) 1993-06-24 1995-04-18 At&T Corp. Photoresist stripping method
JP3302120B2 (ja) 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
US5419877A (en) 1993-09-17 1995-05-30 General Atomics Acoustic barrier separator
US6326130B1 (en) 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
TW274630B (enExample) * 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5567574A (en) 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5597420A (en) 1995-01-17 1997-01-28 Ashland Inc. Stripping composition having monoethanolamine
US5563119A (en) 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
KR100360394B1 (ko) 1995-12-20 2003-01-24 삼성전자 주식회사 반도체기판의세정방법및이에사용되는세정액
US5704987A (en) 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5665688A (en) 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5648324A (en) 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
KR100207469B1 (ko) 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
US5932021A (en) 1996-06-26 1999-08-03 Cala; Francis R. Aqueous cleaning composition for removing flux and method of use
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US5989353A (en) 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5709756A (en) 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5698503A (en) 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US5922136A (en) 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
JPH11282176A (ja) * 1998-03-26 1999-10-15 Toray Fine Chemical Kk フォトレジスト剥離用組成物
US5935871A (en) 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
US5997658A (en) 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
JPH11283953A (ja) * 1998-03-27 1999-10-15 Sanyo Electric Co Ltd 半導体ウエハの洗浄液及びその洗浄方法
JP3775054B2 (ja) * 1998-04-28 2006-05-17 ぺんてる株式会社 ボールペン用水性インキ
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
JP4283952B2 (ja) * 1999-10-12 2009-06-24 多摩化学工業株式会社 非鉄金属洗浄用洗浄液組成物
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition

Similar Documents

Publication Publication Date Title
JP2009013417A5 (enExample)
JP2003536258A5 (enExample)
JP4147320B2 (ja) プラズマエッチング残留物を除去するための非腐食性洗浄組成物
US6599370B2 (en) Stabilized alkaline compositions for cleaning microelectronic substrates
TWI454573B (zh) 清潔配方及該清潔配方的使用方法
EP1576072B1 (en) Aqueous phosphoric acid compositions for cleaning semiconductor devices
TWI516880B (zh) 用於移除厚膜阻隔物的剝除及清潔組合物
TW200945424A (en) Post-deposition cleaning methods and formulations for substrates with cap layers
US20090120457A1 (en) Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices
JP2006503972A5 (enExample)
CN103168092A (zh) 用于去除焊剂的清洗剂
WO2010091045A2 (en) Non-fluoride containing composition for the removal of polymers and other organic material from a surface
CA2544198A1 (en) Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
JP6488507B2 (ja) フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法
TWI570235B (zh) 用於移除光阻的剝離劑組成物以及使用其的光阻剝離方法
JP2014048667A (ja) 厚膜のネガ型フォトレジスト用剥離液組成物｛ｓｔｒｉｐｐｅｒｃｏｍｐｏｓｉｔｉｏｎｆｏｒｔｈｉｃｋｎｅｇａｔｉｖｅｐｈｏｔｏｒｅｓｉｓｔ｝
TW201426206A (zh) 一種光阻去除劑
JP2018121056A5 (enExample)
JP2014526586A5 (enExample)
JP2009141310A (ja) アルファ−ヒドロキシカルボニル化合物／アミンまたはアンモニア反応の結合体のオリゴマー型またはポリマー型物質を含有するフッ化物含有フォトレジスト剥離剤または残渣除去洗浄組成物
CA2452884C (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP2015113379A (ja) 半田フラックス残渣除去用洗浄剤組成物
JP6497668B2 (ja) フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法
JP2008537182A5 (enExample)
TWI784995B (zh) 洗淨液及製造其之方法