JP6497668B2 - フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 - Google Patents
フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 Download PDFInfo
- Publication number
- JP6497668B2 JP6497668B2 JP2016574240A JP2016574240A JP6497668B2 JP 6497668 B2 JP6497668 B2 JP 6497668B2 JP 2016574240 A JP2016574240 A JP 2016574240A JP 2016574240 A JP2016574240 A JP 2016574240A JP 6497668 B2 JP6497668 B2 JP 6497668B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- stripper composition
- weight
- amine compound
- ether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 144
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 114
- 238000000034 method Methods 0.000 title claims description 24
- -1 amine compound Chemical class 0.000 claims description 111
- 230000007797 corrosion Effects 0.000 claims description 23
- 238000005260 corrosion Methods 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 239000003112 inhibitor Substances 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 229920001296 polysiloxane Polymers 0.000 claims description 15
- 239000002736 nonionic surfactant Substances 0.000 claims description 11
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 10
- 239000003495 polar organic solvent Substances 0.000 claims description 10
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 10
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 5
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 3
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 3
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 claims description 3
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- 150000003457 sulfones Chemical class 0.000 claims description 3
- 150000003462 sulfoxides Chemical class 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- JKEHLQXXZMANPK-UHFFFAOYSA-N 1-[1-(1-propoxypropan-2-yloxy)propan-2-yloxy]propan-2-ol Chemical compound CCCOCC(C)OCC(C)OCC(C)O JKEHLQXXZMANPK-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 2
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 2
- FMVOPJLFZGSYOS-UHFFFAOYSA-N 2-[2-(2-ethoxypropoxy)propoxy]propan-1-ol Chemical compound CCOC(C)COC(C)COC(C)CO FMVOPJLFZGSYOS-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- KCBPVRDDYVJQHA-UHFFFAOYSA-N 2-[2-(2-propoxyethoxy)ethoxy]ethanol Chemical compound CCCOCCOCCOCCO KCBPVRDDYVJQHA-UHFFFAOYSA-N 0.000 claims description 2
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 claims description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 2
- 150000003852 triazoles Chemical class 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims 5
- 229920000570 polyether Polymers 0.000 claims 5
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims 1
- RELOFIKZGIJATN-UHFFFAOYSA-N 2-imidazolidin-1-ylethanol Chemical compound OCCN1CCNC1 RELOFIKZGIJATN-UHFFFAOYSA-N 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 16
- 239000011521 glass Substances 0.000 description 12
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 206010074268 Reproductive toxicity Diseases 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 230000007696 reproductive toxicity Effects 0.000 description 4
- 231100000372 reproductive toxicity Toxicity 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000001850 reproductive effect Effects 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003880 polar aprotic solvent Substances 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 231100000091 reproductive toxicant Toxicity 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- BQCCJWMQESHLIT-UHFFFAOYSA-N 1-propylsulfinylpropane Chemical compound CCCS(=O)CCC BQCCJWMQESHLIT-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 208000032839 leukemia Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- YKOQQFDCCBKROY-UHFFFAOYSA-N n,n-diethylpropanamide Chemical compound CCN(CC)C(=O)CC YKOQQFDCCBKROY-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- YTWOHSWDLJUCRK-UHFFFAOYSA-N thiolane 1,1-dioxide Chemical compound O=S1(=O)CCCC1.O=S1(=O)CCCC1 YTWOHSWDLJUCRK-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/373—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicones
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- C11D2111/22—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
R10およびR11は、互いに同一または異なり、炭素数1〜4のヒドロキシアルキル基であり、
aは、1〜4の整数であり、
bは、1〜4の整数である。
前記フォトレジスト除去用ストリッパー組成物に関する内容は、前記一実施形態に関して上述した内容を含む。
下記表1の組成により、各成分を混合して、実施例1〜4、比較例1〜2によるフォトレジスト除去用ストリッパー組成物をそれぞれ製造した。前記製造されたフォトレジスト除去用ストリッパー組成物の具体的な組成は、下記表1に記載された通りである。
前記実施例および比較例で得られたストリッパー組成物の物性を下記の方法で測定し、その結果を表に示した。
1−1.新液剥離力評価
まず、100mmx100mmのガラス基板にフォトレジスト組成物(商品名:JC−800)3.5mlを滴下し、スピンコーティング装置にて400rpmの速度下で10秒間フォトレジスト組成物を塗布した。このようなガラス基板をホットプレートに装着し、140℃の温度で12分間ハードベークして、フォトレジストを形成した。
剥離力評価用試料は、実験例1−1と同様の方法で準備し、前記実施例および比較例で得られたストリッパー組成物500gを準備し、50℃に昇温させた状態で、フォトレジスト組成物を全体組成物に対して1重量%の含有量で溶解させた。ストリッパー組成物を48時間加熱して、苛酷条件下で経時変化を起こした。
実施例1、比較例1〜2のストリッパー組成物を製造後、10日間、50℃の温度で保管しながら、各保管日付ごとに経時的アミン(AIP、AEE、LGA)含有量の変化をガスクロマトグラフィーで分析および評価して、下記表4に示した。
実施例3および4、比較例1〜2のストリッパー組成物500gを50℃の温度に昇温し、下記表5の膜が形成されたガラス基板を用いて該ガラス基板を前記ストリッパー組成物で処理した。以降、前記ガラス基板を液切し、超純水を数滴滴下し、50秒間待機した。超純水で再度洗浄し、ガラス基板上のシミおよび異物を光学顕微鏡で観察して、次の基準下でリンス力を評価した。
OK:ガラス基板上のシミまたは異物が観察されない;
NG:ガラス基板上のシミまたは異物が観察される。
Claims (17)
- 重量平均分子量95g/mol以上の鎖状アミン化合物;
重量平均分子量90g/mol以下の鎖状アミン化合物;
環状アミン化合物;
炭素数1〜5の直鎖もしくは分枝鎖のアルキル基が窒素に1〜2置換されたアミド系化合物;および
極性有機溶媒;
を含み、
前記重量平均分子量95g/mol以上の鎖状アミン化合物および重量平均分子量90g/mol以下の鎖状アミン化合物の間の重量比が1:1〜1:10である、
フォトレジスト除去用ストリッパー組成物。 - 全体組成物に対して、
重量平均分子量95g/mol以上の鎖状アミン化合物0.1重量%〜10重量%;
重量平均分子量90g/mol以下の鎖状アミン化合物0.5重量%〜20重量%;
環状アミン化合物0.1重量%〜10重量%;
炭素数1〜5の直鎖もしくは分枝鎖のアルキル基が窒素に1〜2置換されたアミド系化合物10重量%〜85重量%;および
極性有機溶媒10重量%〜85重量%を含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記重量平均分子量95g/mol以上の鎖状アミン化合物は、
(2−アミノエトキシ)−1−エタノール、アミノエチルエタノールアミン、メチルジエタノールアミン、ジエチレントリアミン、ジエタノールアミン、ジエチルアミノエタノール、トリエタノールアミン、およびトリエチレンテトラアミンからなる群より選択された1種以上の化合物を含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記重量平均分子量90g/mol以下の鎖状アミン化合物は、
1−アミノイソプロパノール、モノメタノールアミン、モノエタノールアミン、2−メチルアミノエタノール、3−アミノプロパノール、およびN−メチルエチルアミンからなる群より選択された1種以上の化合物を含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記環状アミン化合物は、
1−イミダゾリジンエタノール、アミノエチルピペラジン、およびヒドロキシエチルピペラジンからなる群より選択された1種以上の化合物を含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記炭素数1〜5の直鎖もしくは分枝鎖のアルキル基が窒素に1〜2置換されたアミド系化合物は、
エチル基が窒素に1〜2置換されたアミド系化合物を含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記極性有機溶媒は、
アルキレングリコールモノアルキルエーテル、ピロリドン、スルホン、およびスルホキシドからなる群より選択された1種以上を含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記アルキレングリコールモノアルキルエーテルは、
ジエチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノブチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノプロピルエーテル、ジエチレングリコールモノブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノブチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコールモノエチルエーテル、トリエチレングリコールモノプロピルエーテル、トリエチレングリコールモノブチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノエチルエーテル、トリプロピレングリコールモノプロピルエーテル、およびトリプロピレングリコールモノブチルエーテルからなる群より選択された1種以上を含む、
請求項7に記載のフォトレジスト除去用ストリッパー組成物。 - 腐食防止剤をさらに含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記腐食防止剤は、
トリアゾール系化合物またはテトラゾール系化合物を含む、
請求項9に記載のフォトレジスト除去用ストリッパー組成物。 - 前記腐食防止剤は、全体組成物に対して、0.01重量%〜0.5重量%含まれる、
請求項9に記載のフォトレジスト除去用ストリッパー組成物。 - シリコーン系非イオン性界面活性剤をさらに含む、
請求項1に記載のフォトレジスト除去用ストリッパー組成物。 - 前記シリコーン系非イオン性界面活性剤は、ポリシロキサン系重合体を含む、
請求項13に記載のフォトレジスト除去用ストリッパー組成物。 - 前記ポリシロキサン系重合体は、
ポリエーテル変性アクリル官能性ポリジメチルシロキサン、ポリエーテル変性シロキサン、ポリエーテル変性ポリジメチルシロキサン、ポリエチルアルキルシロキサン、アラルキル変性ポリメチルアルキルシロキサン、ポリエーテル変性ヒドロキシ官能性ポリジメチルシロキサン、ポリエーテル変性ジメチルポリシロキサン、および変性アクリル官能性ポリジメチルシロキサンからなる群より選択された1種以上を含む、
請求項14に記載のフォトレジスト除去用ストリッパー組成物。 - 前記シリコーン系非イオン性界面活性剤は、全体組成物に対して、0.0005重量%〜0.1重量%含まれる、
請求項13に記載のフォトレジスト除去用ストリッパー組成物。 - 基板上に下部膜を形成する段階と、
前記下部膜にフォトレジストパターンを形成する段階と、
前記フォトレジストパターンをマスクとして前記下部膜をパターニングする段階と、
請求項1に記載のフォトレジスト除去用ストリッパー組成物を用いてフォトレジストを剥離する段階と
を含む、
フォトレジストの剥離方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0108634 | 2014-08-20 | ||
KR1020140108634A KR101586453B1 (ko) | 2014-08-20 | 2014-08-20 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 |
PCT/KR2015/008608 WO2016028057A1 (ko) | 2014-08-20 | 2015-08-18 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017527838A JP2017527838A (ja) | 2017-09-21 |
JP6497668B2 true JP6497668B2 (ja) | 2019-04-10 |
Family
ID=55308707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016574240A Active JP6497668B2 (ja) | 2014-08-20 | 2015-08-18 | フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9983481B2 (ja) |
JP (1) | JP6497668B2 (ja) |
KR (1) | KR101586453B1 (ja) |
CN (1) | CN105556392B (ja) |
TW (1) | TWI564679B (ja) |
WO (1) | WO2016028057A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102317153B1 (ko) * | 2016-06-15 | 2021-10-26 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 |
WO2018058341A1 (en) * | 2016-09-28 | 2018-04-05 | Dow Global Technologies Llc | Sulfoxide/glycol ether based solvents for use in the electronics industry |
CN110799906A (zh) * | 2017-07-06 | 2020-02-14 | 陶氏环球技术有限责任公司 | 用于电子零件的清洁和剥离的酰胺组合 |
KR20220150134A (ko) * | 2021-05-03 | 2022-11-10 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
TWI812342B (zh) * | 2021-11-22 | 2023-08-11 | 南韓商Lg化學股份有限公司 | 移除光阻之剝離劑組成物以及使用其之剝離光阻方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02981A (ja) * | 1988-02-25 | 1990-01-05 | Hoya Corp | 感光性樹脂用剥離液及びこれを用いる感光性樹脂の剥離方法 |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
JP3953600B2 (ja) | 1997-10-28 | 2007-08-08 | シャープ株式会社 | レジスト膜剥離剤及びそれを用いた薄膜回路素子の製造方法 |
KR100286860B1 (ko) * | 1998-12-31 | 2001-07-12 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
JP4035701B2 (ja) * | 2002-03-12 | 2008-01-23 | 三菱瓦斯化学株式会社 | レジスト剥離剤及びその使用方法 |
JP2004101849A (ja) * | 2002-09-09 | 2004-04-02 | Mitsubishi Gas Chem Co Inc | 洗浄剤組成物 |
JP4085262B2 (ja) | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
KR20040083157A (ko) | 2003-03-21 | 2004-10-01 | 금호석유화학 주식회사 | 포토레지스트용 스트리퍼 조성물 |
KR20060024478A (ko) * | 2004-09-13 | 2006-03-17 | 주식회사 동진쎄미켐 | 포토레지스트 박리액 조성물 |
KR20060064441A (ko) | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
TWI362571B (en) * | 2006-05-26 | 2012-04-21 | Lg Chemical Ltd | Stripper composition for photoresist |
JP5236217B2 (ja) * | 2006-06-22 | 2013-07-17 | 東進セミケム株式会社 | レジスト除去用組成物 |
JP2008003399A (ja) * | 2006-06-23 | 2008-01-10 | Tokyo Ohka Kogyo Co Ltd | フォトレジスト用剥離液およびこれを用いた基板の処理方法 |
KR101341746B1 (ko) | 2007-05-04 | 2013-12-16 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법 |
KR20100070087A (ko) * | 2008-12-17 | 2010-06-25 | 삼성전자주식회사 | 포토레지스트 박리제 조성물 및 박막 트랜지스터 어레이 기판의 제조 방법 |
KR101213731B1 (ko) * | 2009-02-20 | 2012-12-18 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR20100110977A (ko) * | 2009-04-06 | 2010-10-14 | 동우 화인켐 주식회사 | 포토레지스트 박리용 조성물 및 이를 이용한 박리방법 |
JP5504692B2 (ja) * | 2009-05-18 | 2014-05-28 | 東ソー株式会社 | 防食剤及びその用途 |
KR20110016418A (ko) * | 2009-08-11 | 2011-02-17 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
JP5279921B2 (ja) * | 2009-11-26 | 2013-09-04 | エルジー・ケム・リミテッド | フォトレジストストリッパー組成物及びこれを利用したフォトレジストの剥離方法 |
JP5678616B2 (ja) * | 2010-12-02 | 2015-03-04 | 東ソー株式会社 | レジスト剥離剤及びそれを用いた剥離方法 |
KR101682005B1 (ko) | 2011-09-02 | 2016-12-02 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
US8883699B2 (en) * | 2011-10-25 | 2014-11-11 | Dongwoo Fine-Chem Co., Ltd. | Resist stripping composition and method of stripping resist using the same |
KR20140024625A (ko) | 2012-08-20 | 2014-03-03 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 박리액 조성물 |
JP6121570B2 (ja) * | 2013-03-07 | 2017-04-26 | エルジー・ケム・リミテッド | フォトレジスト除去用ストリッパ組成物およびこれを用いたフォトレジストの剥離方法 |
KR20140110383A (ko) | 2013-03-07 | 2014-09-17 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
KR101668063B1 (ko) * | 2013-05-07 | 2016-10-20 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
JP6501492B2 (ja) * | 2014-10-31 | 2019-04-17 | 関東化學株式会社 | フォトレジスト残渣および/またはポリマー残渣を除去するための組成物 |
-
2014
- 2014-08-20 KR KR1020140108634A patent/KR101586453B1/ko active IP Right Grant
-
2015
- 2015-08-18 JP JP2016574240A patent/JP6497668B2/ja active Active
- 2015-08-18 WO PCT/KR2015/008608 patent/WO2016028057A1/ko active Application Filing
- 2015-08-18 CN CN201580000649.6A patent/CN105556392B/zh active Active
- 2015-08-18 US US15/318,539 patent/US9983481B2/en active Active
- 2015-08-19 TW TW104126957A patent/TWI564679B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN105556392A (zh) | 2016-05-04 |
CN105556392B (zh) | 2019-09-06 |
US9983481B2 (en) | 2018-05-29 |
US20170115573A1 (en) | 2017-04-27 |
TWI564679B (zh) | 2017-01-01 |
KR101586453B1 (ko) | 2016-01-21 |
JP2017527838A (ja) | 2017-09-21 |
TW201610613A (zh) | 2016-03-16 |
WO2016028057A1 (ko) | 2016-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6488507B2 (ja) | フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 | |
JP6367842B2 (ja) | フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 | |
JP6497668B2 (ja) | フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 | |
JP6412143B2 (ja) | フォトレジスト除去用ストリッパー組成物およびこれを利用したフォトレジストの剥離方法 | |
JP6121570B2 (ja) | フォトレジスト除去用ストリッパ組成物およびこれを用いたフォトレジストの剥離方法 | |
JP2014048667A (ja) | 厚膜のネガ型フォトレジスト用剥離液組成物{strippercompositionforthicknegativephotoresist} | |
JP5678616B2 (ja) | レジスト剥離剤及びそれを用いた剥離方法 | |
KR20160022837A (ko) | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 | |
KR101686175B1 (ko) | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 | |
KR102228536B1 (ko) | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 | |
JP2004205674A (ja) | レジスト剥離剤 | |
TWI805865B (zh) | 用於移除光阻的剝離劑組成物以及使用其剝離光阻之方法 | |
WO2014137173A1 (ko) | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 | |
WO2016027985A1 (ko) | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 | |
TW202129438A (zh) | 用於移除光阻的剝離劑組合物及使用其的光阻剝離方法 | |
JP2015068845A (ja) | レジスト剥離剤及びそれを用いたレジスト剥離方法 | |
JP2015068844A (ja) | レジスト剥離剤、及びそれを用いた銅又は銅合金配線用レジストからのレジスト剥離方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180123 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180412 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180814 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181015 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190212 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190304 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6497668 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |