JP2018121056A5 - - Google Patents

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Publication number
JP2018121056A5
JP2018121056A5 JP2018008709A JP2018008709A JP2018121056A5 JP 2018121056 A5 JP2018121056 A5 JP 2018121056A5 JP 2018008709 A JP2018008709 A JP 2018008709A JP 2018008709 A JP2018008709 A JP 2018008709A JP 2018121056 A5 JP2018121056 A5 JP 2018121056A5
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JP
Japan
Prior art keywords
etching solution
hydroxide
metal
group
strong base
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JP2018008709A
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English (en)
Japanese (ja)
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JP6717862B2 (ja
JP2018121056A (ja
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Priority claimed from US15/872,620 external-priority patent/US11035044B2/en
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Publication of JP2018121056A5 publication Critical patent/JP2018121056A5/ja
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JP2018008709A 2017-01-23 2018-01-23 タングステン及びgst膜のためのエッチング溶液 Active JP6717862B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762449290P 2017-01-23 2017-01-23
US62/449,290 2017-01-23
US15/872,620 2018-01-16
US15/872,620 US11035044B2 (en) 2017-01-23 2018-01-16 Etching solution for tungsten and GST films

Publications (3)

Publication Number Publication Date
JP2018121056A JP2018121056A (ja) 2018-08-02
JP2018121056A5 true JP2018121056A5 (enExample) 2018-11-08
JP6717862B2 JP6717862B2 (ja) 2020-07-08

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JP2018008709A Active JP6717862B2 (ja) 2017-01-23 2018-01-23 タングステン及びgst膜のためのエッチング溶液

Country Status (7)

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US (1) US11035044B2 (enExample)
EP (1) EP3351658B1 (enExample)
JP (1) JP6717862B2 (enExample)
KR (1) KR102219829B1 (enExample)
CN (1) CN108342735B (enExample)
SG (1) SG10201800568XA (enExample)
TW (1) TWI674339B (enExample)

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CN116635986A (zh) * 2021-01-12 2023-08-22 三菱化学株式会社 蚀刻组合物、蚀刻方法、半导体器件的制造方法和全环绕栅极型晶体管的制造方法
KR20230038933A (ko) * 2021-09-13 2023-03-21 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
CN114854419B (zh) * 2022-04-13 2023-09-05 华中科技大学 一种用于湿法蚀刻相变材料的碱性蚀刻液及其应用
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