KR102219829B1 - 텅스텐 및 gst 막을 위한 에칭 용액 - Google Patents

텅스텐 및 gst 막을 위한 에칭 용액 Download PDF

Info

Publication number
KR102219829B1
KR102219829B1 KR1020180008355A KR20180008355A KR102219829B1 KR 102219829 B1 KR102219829 B1 KR 102219829B1 KR 1020180008355 A KR1020180008355 A KR 1020180008355A KR 20180008355 A KR20180008355 A KR 20180008355A KR 102219829 B1 KR102219829 B1 KR 102219829B1
Authority
KR
South Korea
Prior art keywords
etching solution
hydroxide
metal
weight
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180008355A
Other languages
English (en)
Korean (ko)
Other versions
KR20180087186A (ko
Inventor
웬 다르 리우
라이셩 선
이-치아 리
티안니우 첸
강 크리스 한-아데베쿤
Original Assignee
버슘머트리얼즈 유에스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 버슘머트리얼즈 유에스, 엘엘씨 filed Critical 버슘머트리얼즈 유에스, 엘엘씨
Publication of KR20180087186A publication Critical patent/KR20180087186A/ko
Application granted granted Critical
Publication of KR102219829B1 publication Critical patent/KR102219829B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020180008355A 2017-01-23 2018-01-23 텅스텐 및 gst 막을 위한 에칭 용액 Active KR102219829B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762449290P 2017-01-23 2017-01-23
US62/449,290 2017-01-23
US15/872,620 2018-01-16
US15/872,620 US11035044B2 (en) 2017-01-23 2018-01-16 Etching solution for tungsten and GST films

Publications (2)

Publication Number Publication Date
KR20180087186A KR20180087186A (ko) 2018-08-01
KR102219829B1 true KR102219829B1 (ko) 2021-02-24

Family

ID=61192641

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180008355A Active KR102219829B1 (ko) 2017-01-23 2018-01-23 텅스텐 및 gst 막을 위한 에칭 용액

Country Status (7)

Country Link
US (1) US11035044B2 (enExample)
EP (1) EP3351658B1 (enExample)
JP (1) JP6717862B2 (enExample)
KR (1) KR102219829B1 (enExample)
CN (1) CN108342735B (enExample)
SG (1) SG10201800568XA (enExample)
TW (1) TWI674339B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11211543B2 (en) 2019-12-05 2021-12-28 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device and its fabrication
EP4561326A3 (en) * 2019-12-05 2025-08-20 Microsoft Technology Licensing LLC Method of selectively etching a metal component
CN112522707B (zh) * 2020-11-20 2021-12-03 湖北兴福电子材料有限公司 一种高选择比的钨蚀刻液
EP4280258A4 (en) * 2021-01-12 2024-07-24 Mitsubishi Chemical Corporation ETCHING COMPOSITION, ETCHING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR WRAP-GATE TRANSISTOR
KR20230038933A (ko) * 2021-09-13 2023-03-21 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
CN114854419B (zh) * 2022-04-13 2023-09-05 华中科技大学 一种用于湿法蚀刻相变材料的碱性蚀刻液及其应用
CN115895660A (zh) * 2022-12-29 2023-04-04 沧州信联化工有限公司 一种tmah系各向异性硅蚀刻液及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008072088A (ja) 2006-07-10 2008-03-27 Qimonda North America Corp 異なる相変化材料を有する低電力相変化メモリセル
JP2015507692A (ja) * 2011-12-20 2015-03-12 ソルベイ （チャイナ） カンパニー リミテッド 金属表面の腐食のための活性化剤としてのフェノール化合物の使用
JP6061915B2 (ja) * 2012-03-12 2017-01-18 株式会社Ｊｃｕ 選択的エッチング方法
JP2017502491A (ja) * 2013-10-11 2017-01-19 イー．ケー．シー．テクノロジー．インコーポレーテッド 低ｋ誘電材料及び銅を含む半導体デバイス基板から金属ハードマスク及びその他の残留物を選択的に除去するための方法及び組成物

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976500A (en) * 1973-08-27 1976-08-24 Enthone, Incorporated Method for dissolving non-ferrous metals
US4995942A (en) 1990-04-30 1991-02-26 International Business Machines Corporation Effective near neutral pH etching solution for molybdenum or tungsten
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5563119A (en) 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6177349B1 (en) * 1998-12-07 2001-01-23 Advanced Micro Devices, Inc. Preventing Cu dendrite formation and growth
SG118380A1 (en) * 2004-06-15 2006-01-27 Air Prod & Chem Composition and method comprising same for removing residue from a substrate
US20060003910A1 (en) 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
US8178482B2 (en) 2004-08-03 2012-05-15 Avantor Performance Materials, Inc. Cleaning compositions for microelectronic substrates
KR100640002B1 (ko) 2005-09-06 2006-11-01 한국전자통신연구원 상변화 재료 박막 패터닝 방법 및 이를 이용한 상변화메모리 소자의 제조 방법
KR100746224B1 (ko) 2006-01-02 2007-08-03 삼성전자주식회사 멀티비트 셀들을 구비하는 상변화 기억소자들 및 그프로그램 방법들
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8802608B2 (en) * 2007-07-26 2014-08-12 Mitsubishi Gas Chemical Comany, Inc. Composition for cleaning and rust prevention and process for producing semiconductor element or display element
US8551682B2 (en) * 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
KR100935591B1 (ko) 2007-12-26 2010-01-07 주식회사 하이닉스반도체 콘택 저항 및 리셋 커런트를 개선할 수 있는 상변화 메모리소자 및 그 제조방법
JP2010050204A (ja) * 2008-08-20 2010-03-04 Oki Semiconductor Co Ltd 半導体素子の製造方法
KR101282177B1 (ko) 2008-09-09 2013-07-04 쇼와 덴코 가부시키가이샤 티탄계 금속, 텅스텐계 금속, 티탄-텅스텐계 금속 또는 그것들의 질화물의 에칭액
US9481937B2 (en) 2009-04-30 2016-11-01 Asm America, Inc. Selective etching of reactor surfaces
US8110535B2 (en) 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US8518865B2 (en) 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
KR20120082443A (ko) * 2009-12-17 2012-07-23 쇼와 덴코 가부시키가이샤 루테늄계 금속의 에칭용 조성물 및 그 조제 방법
TWI449170B (zh) * 2009-12-29 2014-08-11 Ind Tech Res Inst 相變化記憶體裝置及其製造方法
US9045717B2 (en) * 2010-01-29 2015-06-02 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
CN102221791B (zh) 2011-04-29 2014-09-03 西安东旺精细化学有限公司 一种光致抗蚀剂的剥离液组合物
CN103782368B (zh) * 2011-06-01 2017-06-09 安万托特性材料有限责任公司 对铜、钨和多孔低κ电介质具有增强的相容性的半水性聚合物移除组合物
CN102820223A (zh) 2011-06-08 2012-12-12 安集微电子（上海）有限公司 一种同时抛光相变材料和钨的化学机械抛光方法
JP2013004871A (ja) * 2011-06-20 2013-01-07 Showa Denko Kk 金属エッチング用組成物、および金属エッチング用組成物を用いた半導体装置の製造方法
KR101782329B1 (ko) 2011-10-18 2017-09-28 삼성전자주식회사 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
KR20130049538A (ko) 2011-11-04 2013-05-14 삼성전자주식회사 연마용 슬러리 조성물 및 이를 이용한 상변화 메모리 장치의 제조 방법
CN104145324B (zh) * 2011-12-28 2017-12-22 恩特格里斯公司 用于选择性蚀刻氮化钛的组合物和方法
KR20140138902A (ko) * 2012-03-12 2014-12-04 인티그리스, 인코포레이티드 애싱된 스핀-온 유리의 선택적 제거 방법
JP2015519723A (ja) * 2012-03-18 2015-07-09 インテグリス，インコーポレイテッド バリア層との適合性および洗浄性能が改良されたｃｍｐ後配合物
JP6222907B2 (ja) * 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド 研磨用組成物
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
JP6139975B2 (ja) 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
US20160122696A1 (en) * 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
JP6589883B2 (ja) * 2014-11-13 2019-10-16 三菱瓦斯化学株式会社 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法
EP3243213A4 (en) * 2015-01-05 2018-08-08 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US10400167B2 (en) 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008072088A (ja) 2006-07-10 2008-03-27 Qimonda North America Corp 異なる相変化材料を有する低電力相変化メモリセル
JP2015507692A (ja) * 2011-12-20 2015-03-12 ソルベイ （チャイナ） カンパニー リミテッド 金属表面の腐食のための活性化剤としてのフェノール化合物の使用
JP6061915B2 (ja) * 2012-03-12 2017-01-18 株式会社Ｊｃｕ 選択的エッチング方法
JP2017502491A (ja) * 2013-10-11 2017-01-19 イー．ケー．シー．テクノロジー．インコーポレーテッド 低ｋ誘電材料及び銅を含む半導体デバイス基板から金属ハードマスク及びその他の残留物を選択的に除去するための方法及び組成物

Also Published As

Publication number Publication date
US20180209049A1 (en) 2018-07-26
TWI674339B (zh) 2019-10-11
SG10201800568XA (en) 2018-08-30
KR20180087186A (ko) 2018-08-01
US11035044B2 (en) 2021-06-15
EP3351658B1 (en) 2022-02-09
JP2018121056A (ja) 2018-08-02
TW201827648A (zh) 2018-08-01
CN108342735B (zh) 2020-08-18
JP6717862B2 (ja) 2020-07-08
EP3351658A1 (en) 2018-07-25
CN108342735A (zh) 2018-07-31

Similar Documents

Publication Publication Date Title
KR102219829B1 (ko) 텅스텐 및 gst 막을 위한 에칭 용액
JP7126973B2 (ja) タングステン含有金属およびＴｉＮ含有材料の両方に好適なエッチング溶液
KR101884367B1 (ko) 높은 ｗｎ／ｗ 에칭 선택비를 지닌 스트립핑 조성물
KR101557979B1 (ko) 세정 포뮬레이션
TWI454573B (zh) 清潔配方及該清潔配方的使用方法
JP6612891B2 (ja) 洗浄配合
KR101960351B1 (ko) 세정 포뮬레이션
EP1813667A1 (en) Cleaning formulations
KR20170066244A (ko) 에칭 조성물 및 이를 사용하는 방법
TWI748369B (zh) 用於鋁氮化物的蝕刻溶液及方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20180123

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180312

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20180123

Comment text: Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190904

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20200724

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20190904

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

X091 Application refused [patent]
AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20200724

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20200303

Comment text: Amendment to Specification, etc.

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20201013

Patent event code: PE09021S01D

AMND Amendment
PX0701 Decision of registration after re-examination

Patent event date: 20210209

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20210113

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20200924

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20200724

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20200303

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210218

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210218

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240119

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20250108

Start annual number: 5

End annual number: 5