CN108342735B - 用于钨和gst膜的蚀刻溶液 - Google Patents

用于钨和gst膜的蚀刻溶液 Download PDF

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Publication number
CN108342735B
CN108342735B CN201810064060.8A CN201810064060A CN108342735B CN 108342735 B CN108342735 B CN 108342735B CN 201810064060 A CN201810064060 A CN 201810064060A CN 108342735 B CN108342735 B CN 108342735B
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China
Prior art keywords
etching solution
hydroxide
metal
etching
tungsten
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Chinese (zh)
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CN108342735A (zh
Inventor
刘文达
孙来生
李翊嘉
陈天牛
G·C·汉-阿德贝昆
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Versum Materials US LLC
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Versum Materials US LLC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201810064060.8A 2017-01-23 2018-01-23 用于钨和gst膜的蚀刻溶液 Active CN108342735B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762449290P 2017-01-23 2017-01-23
US62/449,290 2017-01-23
US15/872,620 2018-01-16
US15/872,620 US11035044B2 (en) 2017-01-23 2018-01-16 Etching solution for tungsten and GST films

Publications (2)

Publication Number Publication Date
CN108342735A CN108342735A (zh) 2018-07-31
CN108342735B true CN108342735B (zh) 2020-08-18

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CN201810064060.8A Active CN108342735B (zh) 2017-01-23 2018-01-23 用于钨和gst膜的蚀刻溶液

Country Status (7)

Country Link
US (1) US11035044B2 (enExample)
EP (1) EP3351658B1 (enExample)
JP (1) JP6717862B2 (enExample)
KR (1) KR102219829B1 (enExample)
CN (1) CN108342735B (enExample)
SG (1) SG10201800568XA (enExample)
TW (1) TWI674339B (enExample)

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US11211543B2 (en) 2019-12-05 2021-12-28 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device and its fabrication
EP4561326A3 (en) * 2019-12-05 2025-08-20 Microsoft Technology Licensing LLC Method of selectively etching a metal component
CN112522707B (zh) * 2020-11-20 2021-12-03 湖北兴福电子材料有限公司 一种高选择比的钨蚀刻液
EP4280258A4 (en) * 2021-01-12 2024-07-24 Mitsubishi Chemical Corporation ETCHING COMPOSITION, ETCHING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR WRAP-GATE TRANSISTOR
KR20230038933A (ko) * 2021-09-13 2023-03-21 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
CN114854419B (zh) * 2022-04-13 2023-09-05 华中科技大学 一种用于湿法蚀刻相变材料的碱性蚀刻液及其应用
CN115895660A (zh) * 2022-12-29 2023-04-04 沧州信联化工有限公司 一种tmah系各向异性硅蚀刻液及其制备方法

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US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
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Also Published As

Publication number Publication date
US20180209049A1 (en) 2018-07-26
TWI674339B (zh) 2019-10-11
SG10201800568XA (en) 2018-08-30
KR20180087186A (ko) 2018-08-01
US11035044B2 (en) 2021-06-15
KR102219829B1 (ko) 2021-02-24
EP3351658B1 (en) 2022-02-09
JP2018121056A (ja) 2018-08-02
TW201827648A (zh) 2018-08-01
JP6717862B2 (ja) 2020-07-08
EP3351658A1 (en) 2018-07-25
CN108342735A (zh) 2018-07-31

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