JP2006503972A5 - - Google Patents
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- JP2006503972A5 JP2006503972A5 JP2005501654A JP2005501654A JP2006503972A5 JP 2006503972 A5 JP2006503972 A5 JP 2006503972A5 JP 2005501654 A JP2005501654 A JP 2005501654A JP 2005501654 A JP2005501654 A JP 2005501654A JP 2006503972 A5 JP2006503972 A5 JP 2006503972A5
- Authority
- JP
- Japan
- Prior art keywords
- weight
- aqueous
- acid
- residue
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 25
- 238000004140 cleaning Methods 0.000 claims 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 14
- 150000001875 compounds Chemical class 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 7
- 238000005530 etching Methods 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 150000002443 hydroxylamines Chemical class 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 125000000753 cycloalkyl group Chemical group 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims 2
- 239000000908 ammonium hydroxide Substances 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 239000002738 chelating agent Substances 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- GEVPUGOOGXGPIO-UHFFFAOYSA-N oxalic acid;dihydrate Chemical compound O.O.OC(=O)C(O)=O GEVPUGOOGXGPIO-UHFFFAOYSA-N 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- 239000012459 cleaning agent Substances 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 239000003599 detergent Substances 0.000 claims 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000009472 formulation Methods 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 239000004310 lactic acid Substances 0.000 claims 1
- 235000014655 lactic acid Nutrition 0.000 claims 1
- 229940098779 methanesulfonic acid Drugs 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- -1 organic acid ester Chemical class 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 239000003495 polar organic solvent Substances 0.000 claims 1
- 229940005657 pyrophosphoric acid Drugs 0.000 claims 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims 1
- 125000001453 quaternary ammonium group Chemical group 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41996802P | 2002-10-22 | 2002-10-22 | |
| US43036502P | 2002-12-03 | 2002-12-03 | |
| PCT/US2003/033500 WO2004037962A2 (en) | 2002-10-22 | 2003-10-21 | Aqueous phosphoric acid compositions for cleaning semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006503972A JP2006503972A (ja) | 2006-02-02 |
| JP2006503972A5 true JP2006503972A5 (enExample) | 2006-12-07 |
Family
ID=32179772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005501654A Pending JP2006503972A (ja) | 2002-10-22 | 2003-10-21 | 半導体デバイスを洗浄するための水性リン酸組成物 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7235188B2 (enExample) |
| EP (1) | EP1576072B1 (enExample) |
| JP (1) | JP2006503972A (enExample) |
| KR (1) | KR20050084917A (enExample) |
| AT (1) | ATE405622T1 (enExample) |
| AU (1) | AU2003286584A1 (enExample) |
| DE (1) | DE60323148D1 (enExample) |
| ES (1) | ES2310677T3 (enExample) |
| TW (1) | TWI309675B (enExample) |
| WO (1) | WO2004037962A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
| KR101166002B1 (ko) * | 2004-02-09 | 2012-07-18 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 디바이스용 기판 세정액 및 세정방법 |
| EP1628336B1 (en) * | 2004-08-18 | 2012-01-04 | Mitsubishi Gas Chemical Company, Inc. | Cleaning liquid and cleaning method |
| US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| SG158920A1 (en) * | 2005-01-27 | 2010-02-26 | Advanced Tech Materials | Compositions for processing of semiconductor substrates |
| KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
| US7682458B2 (en) | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
| US7888302B2 (en) | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
| JP2008541426A (ja) * | 2005-05-06 | 2008-11-20 | マリンクロッド・ベイカー・インコーポレイテッド | エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物 |
| WO2007045268A1 (en) * | 2005-10-21 | 2007-04-26 | Freescale Semiconductor, Inc. | Method for removing etch residue and chemistry therefor |
| JP4693642B2 (ja) * | 2006-01-30 | 2011-06-01 | 株式会社東芝 | 半導体装置の製造方法および洗浄装置 |
| TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
| KR20070088245A (ko) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
| US20080039356A1 (en) * | 2006-07-27 | 2008-02-14 | Honeywell International Inc. | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
| US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
| US20100056410A1 (en) * | 2006-09-25 | 2010-03-04 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
| JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| KR100916353B1 (ko) * | 2007-07-13 | 2009-09-11 | 제일모직주식회사 | 반도체 소자용 세정액 조성물 및 이를 이용한 반도체소자의 세정 방법 |
| US20090131295A1 (en) * | 2007-11-16 | 2009-05-21 | Hua Cui | Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate |
| TWI460557B (zh) * | 2008-03-07 | 2014-11-11 | Wako Pure Chem Ind Ltd | 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法 |
| US20090270299A1 (en) * | 2008-04-23 | 2009-10-29 | Nissan Chemical Industries, Ltd. | Composition for removing protective layer in fabrication of MEMS and method for removing same |
| JP5873718B2 (ja) | 2008-10-21 | 2016-03-01 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 銅の洗浄及び保護配合物 |
| US8765653B2 (en) | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
| US8101561B2 (en) | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| US8324114B2 (en) | 2010-05-26 | 2012-12-04 | Lam Research Corporation | Method and apparatus for silicon oxide residue removal |
| US20120276714A1 (en) * | 2011-04-28 | 2012-11-01 | Nanya Technology Corporation | Method of oxidizing polysilazane |
| US20120288335A1 (en) * | 2011-05-11 | 2012-11-15 | Rodney Green | Soil Stabilization Composition and Methods for Use |
| TWI577834B (zh) * | 2011-10-21 | 2017-04-11 | 富士軟片電子材料美國股份有限公司 | 新穎的鈍化組成物及方法 |
| US20140329184A1 (en) * | 2011-11-22 | 2014-11-06 | Taminco | Stabilized choline solutions and methods for preparing the same |
| KR101261599B1 (ko) | 2012-10-23 | 2013-05-06 | (주)아이리스 | 친환경 장비 세척제 및 이의 제조방법 |
| US9058976B2 (en) | 2012-11-06 | 2015-06-16 | International Business Machines Corporation | Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
| US8647445B1 (en) | 2012-11-06 | 2014-02-11 | International Business Machines Corporation | Process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
| KR102227978B1 (ko) * | 2014-05-22 | 2021-03-15 | 삼성전자주식회사 | 전기습윤 소자용 유체 및 이를 이용한 전기습윤 소자 |
| JP6363724B2 (ja) * | 2014-10-31 | 2018-07-25 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| KR102456079B1 (ko) * | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법 |
| TWI629720B (zh) | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
| CN108573856B (zh) * | 2018-04-13 | 2020-09-04 | 深圳市华星光电技术有限公司 | 一种阵列基板的制备方法及清洗液 |
| US12176419B2 (en) * | 2019-02-15 | 2024-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor device |
| JP7779257B2 (ja) * | 2020-04-09 | 2025-12-03 | 株式会社レゾナック | 組成物、及び接着性ポリマーの洗浄方法 |
| KR102503999B1 (ko) * | 2022-11-14 | 2023-02-27 | 강연중 | 질산과 약산을 일정 비율로 포함하여 반도체 설비 챔버하우징의 세정 시 발생하는 질소산화물 가스 발생을 줄이고 오염막을 효과적으로 제거하는 세정제 조성물 |
| CN117327542A (zh) * | 2023-09-27 | 2024-01-02 | 湖北宇浩高科新材料有限公司 | 一种清洗剂、无水磷酸铁生产装置的除垢方法及应用 |
| US20250235900A1 (en) * | 2024-01-23 | 2025-07-24 | Applied Materials, Inc. | Water-based, high-efficiency chemical reagent for substrate surface particle removal |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826399B2 (ja) * | 1978-06-05 | 1983-06-02 | 花王株式会社 | 液体洗浄剤組成物 |
| US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| US5981454A (en) * | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
| US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
| US5262285A (en) * | 1992-05-04 | 1993-11-16 | Eastman Kodak Company | Methods and compositions for retouching film images |
| US6825156B2 (en) | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| JPH06212193A (ja) * | 1992-12-21 | 1994-08-02 | Nitto Chem Ind Co Ltd | レジスト剥離剤除去用洗浄剤 |
| US5419779A (en) * | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
| JPH1116882A (ja) * | 1997-06-19 | 1999-01-22 | Toray Fine Chem Co Ltd | フォトレジスト剥離用組成物 |
| JP3160238B2 (ja) * | 1997-08-04 | 2001-04-25 | 岸本産業株式会社 | 半導体デバイス製造プロセス用および液晶デバイス製造プロセス用洗浄剤 |
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| KR100610387B1 (ko) * | 1998-05-18 | 2006-08-09 | 말린크로트 베이커, 인코포레이티드 | 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물 |
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| JP3365980B2 (ja) * | 1999-08-03 | 2003-01-14 | 花王株式会社 | 洗浄剤組成物 |
| US6686297B1 (en) * | 2000-08-17 | 2004-02-03 | Georg Gogg | Method of manufacturing a semiconductor device and apparatus to be used therefore |
| JP4614415B2 (ja) * | 2000-08-30 | 2011-01-19 | フアインポリマーズ株式会社 | レジスト残渣除去剤 |
| US6951221B2 (en) * | 2000-09-22 | 2005-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP4689855B2 (ja) * | 2001-03-23 | 2011-05-25 | イーケーシー テクノロジー,インコーポレイティド | 残渣剥離剤組成物およびその使用方法 |
| US6475967B1 (en) * | 2002-03-05 | 2002-11-05 | Colgate-Palmolive Company | Liquid dish cleaning compositions containing a peroxide source |
-
2003
- 2003-10-21 ES ES03777786T patent/ES2310677T3/es not_active Expired - Lifetime
- 2003-10-21 EP EP03777786A patent/EP1576072B1/en not_active Expired - Lifetime
- 2003-10-21 DE DE60323148T patent/DE60323148D1/de not_active Expired - Lifetime
- 2003-10-21 JP JP2005501654A patent/JP2006503972A/ja active Pending
- 2003-10-21 US US10/688,900 patent/US7235188B2/en not_active Expired - Lifetime
- 2003-10-21 WO PCT/US2003/033500 patent/WO2004037962A2/en not_active Ceased
- 2003-10-21 KR KR1020057007764A patent/KR20050084917A/ko not_active Ceased
- 2003-10-21 AT AT03777786T patent/ATE405622T1/de not_active IP Right Cessation
- 2003-10-21 AU AU2003286584A patent/AU2003286584A1/en not_active Abandoned
- 2003-10-21 TW TW092129184A patent/TWI309675B/zh not_active IP Right Cessation
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