AU2003286584A1 - Aqueous phosphoric acid compositions for cleaning semiconductor devices - Google Patents

Aqueous phosphoric acid compositions for cleaning semiconductor devices

Info

Publication number
AU2003286584A1
AU2003286584A1 AU2003286584A AU2003286584A AU2003286584A1 AU 2003286584 A1 AU2003286584 A1 AU 2003286584A1 AU 2003286584 A AU2003286584 A AU 2003286584A AU 2003286584 A AU2003286584 A AU 2003286584A AU 2003286584 A1 AU2003286584 A1 AU 2003286584A1
Authority
AU
Australia
Prior art keywords
phosphoric acid
semiconductor devices
acid compositions
aqueous phosphoric
cleaning semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003286584A
Other languages
English (en)
Other versions
AU2003286584A8 (en
Inventor
Jerome Daviot
Douglas Holmes
Christopher Reid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EKC Technology Inc
Original Assignee
EKC Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EKC Technology Inc filed Critical EKC Technology Inc
Publication of AU2003286584A8 publication Critical patent/AU2003286584A8/xx
Publication of AU2003286584A1 publication Critical patent/AU2003286584A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3227—Ethers thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AU2003286584A 2002-10-22 2003-10-21 Aqueous phosphoric acid compositions for cleaning semiconductor devices Abandoned AU2003286584A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41996802P 2002-10-22 2002-10-22
US60/419,968 2002-10-22
US43036502P 2002-12-03 2002-12-03
US60/430,365 2002-12-03
PCT/US2003/033500 WO2004037962A2 (en) 2002-10-22 2003-10-21 Aqueous phosphoric acid compositions for cleaning semiconductor devices

Publications (2)

Publication Number Publication Date
AU2003286584A8 AU2003286584A8 (en) 2004-05-13
AU2003286584A1 true AU2003286584A1 (en) 2004-05-13

Family

ID=32179772

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003286584A Abandoned AU2003286584A1 (en) 2002-10-22 2003-10-21 Aqueous phosphoric acid compositions for cleaning semiconductor devices

Country Status (10)

Country Link
US (1) US7235188B2 (enExample)
EP (1) EP1576072B1 (enExample)
JP (1) JP2006503972A (enExample)
KR (1) KR20050084917A (enExample)
AT (1) ATE405622T1 (enExample)
AU (1) AU2003286584A1 (enExample)
DE (1) DE60323148D1 (enExample)
ES (1) ES2310677T3 (enExample)
TW (1) TWI309675B (enExample)
WO (1) WO2004037962A2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
TWI362415B (en) * 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
KR101166002B1 (ko) * 2004-02-09 2012-07-18 미쓰비시 가가꾸 가부시키가이샤 반도체 디바이스용 기판 세정액 및 세정방법
EP1628336B1 (en) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
SG158920A1 (en) * 2005-01-27 2010-02-26 Advanced Tech Materials Compositions for processing of semiconductor substrates
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
US7682458B2 (en) 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7888302B2 (en) 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
JP2008541426A (ja) * 2005-05-06 2008-11-20 マリンクロッド・ベイカー・インコーポレイテッド エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物
WO2007045268A1 (en) * 2005-10-21 2007-04-26 Freescale Semiconductor, Inc. Method for removing etch residue and chemistry therefor
JP4693642B2 (ja) * 2006-01-30 2011-06-01 株式会社東芝 半導体装置の製造方法および洗浄装置
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US20080039356A1 (en) * 2006-07-27 2008-02-14 Honeywell International Inc. Selective removal chemistries for semiconductor applications, methods of production and uses thereof
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20100056410A1 (en) * 2006-09-25 2010-03-04 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
KR100916353B1 (ko) * 2007-07-13 2009-09-11 제일모직주식회사 반도체 소자용 세정액 조성물 및 이를 이용한 반도체소자의 세정 방법
US20090131295A1 (en) * 2007-11-16 2009-05-21 Hua Cui Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate
TWI460557B (zh) * 2008-03-07 2014-11-11 Wako Pure Chem Ind Ltd 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法
US20090270299A1 (en) * 2008-04-23 2009-10-29 Nissan Chemical Industries, Ltd. Composition for removing protective layer in fabrication of MEMS and method for removing same
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅の洗浄及び保護配合物
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8324114B2 (en) 2010-05-26 2012-12-04 Lam Research Corporation Method and apparatus for silicon oxide residue removal
US20120276714A1 (en) * 2011-04-28 2012-11-01 Nanya Technology Corporation Method of oxidizing polysilazane
US20120288335A1 (en) * 2011-05-11 2012-11-15 Rodney Green Soil Stabilization Composition and Methods for Use
TWI577834B (zh) * 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
US20140329184A1 (en) * 2011-11-22 2014-11-06 Taminco Stabilized choline solutions and methods for preparing the same
KR101261599B1 (ko) 2012-10-23 2013-05-06 (주)아이리스 친환경 장비 세척제 및 이의 제조방법
US9058976B2 (en) 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
US8647445B1 (en) 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof
KR102227978B1 (ko) * 2014-05-22 2021-03-15 삼성전자주식회사 전기습윤 소자용 유체 및 이를 이용한 전기습윤 소자
JP6363724B2 (ja) * 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
TWI629720B (zh) 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
CN108573856B (zh) * 2018-04-13 2020-09-04 深圳市华星光电技术有限公司 一种阵列基板的制备方法及清洗液
US12176419B2 (en) * 2019-02-15 2024-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device
JP7779257B2 (ja) * 2020-04-09 2025-12-03 株式会社レゾナック 組成物、及び接着性ポリマーの洗浄方法
KR102503999B1 (ko) * 2022-11-14 2023-02-27 강연중 질산과 약산을 일정 비율로 포함하여 반도체 설비 챔버하우징의 세정 시 발생하는 질소산화물 가스 발생을 줄이고 오염막을 효과적으로 제거하는 세정제 조성물
CN117327542A (zh) * 2023-09-27 2024-01-02 湖北宇浩高科新材料有限公司 一种清洗剂、无水磷酸铁生产装置的除垢方法及应用
US20250235900A1 (en) * 2024-01-23 2025-07-24 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826399B2 (ja) * 1978-06-05 1983-06-02 花王株式会社 液体洗浄剤組成物
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
JP3160344B2 (ja) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5262285A (en) * 1992-05-04 1993-11-16 Eastman Kodak Company Methods and compositions for retouching film images
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JPH06212193A (ja) * 1992-12-21 1994-08-02 Nitto Chem Ind Co Ltd レジスト剥離剤除去用洗浄剤
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
JPH1116882A (ja) * 1997-06-19 1999-01-22 Toray Fine Chem Co Ltd フォトレジスト剥離用組成物
JP3160238B2 (ja) * 1997-08-04 2001-04-25 岸本産業株式会社 半導体デバイス製造プロセス用および液晶デバイス製造プロセス用洗浄剤
US6045817A (en) * 1997-09-26 2000-04-04 Diversey Lever, Inc. Ultramild antibacterial cleaning composition for frequent use
JP3693143B2 (ja) * 1997-12-26 2005-09-07 株式会社ジャパンエナジー ウエハ洗浄用組成物及びそれを用いた洗浄方法
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
US6162738A (en) * 1998-09-01 2000-12-19 Micron Technology, Inc. Cleaning compositions for high dielectric structures and methods of using same
US5998358A (en) * 1999-03-23 1999-12-07 Ecolab Inc. Antimicrobial acid cleaner for use on organic or food soil
US6346217B1 (en) * 1999-06-02 2002-02-12 Water Whole International, Inc. Composition and method for cleaning drink water tanks
JP3365980B2 (ja) * 1999-08-03 2003-01-14 花王株式会社 洗浄剤組成物
US6686297B1 (en) * 2000-08-17 2004-02-03 Georg Gogg Method of manufacturing a semiconductor device and apparatus to be used therefore
JP4614415B2 (ja) * 2000-08-30 2011-01-19 フアインポリマーズ株式会社 レジスト残渣除去剤
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP4689855B2 (ja) * 2001-03-23 2011-05-25 イーケーシー テクノロジー，インコーポレイティド 残渣剥離剤組成物およびその使用方法
US6475967B1 (en) * 2002-03-05 2002-11-05 Colgate-Palmolive Company Liquid dish cleaning compositions containing a peroxide source

Also Published As

Publication number Publication date
AU2003286584A8 (en) 2004-05-13
EP1576072A2 (en) 2005-09-21
WO2004037962A2 (en) 2004-05-06
TWI309675B (en) 2009-05-11
ES2310677T3 (es) 2009-01-16
JP2006503972A (ja) 2006-02-02
US7235188B2 (en) 2007-06-26
US20040137736A1 (en) 2004-07-15
TW200420724A (en) 2004-10-16
EP1576072A4 (en) 2006-05-17
ATE405622T1 (de) 2008-09-15
DE60323148D1 (de) 2008-10-02
KR20050084917A (ko) 2005-08-29
WO2004037962A3 (en) 2004-09-23
EP1576072B1 (en) 2008-08-20

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase