JP2009004757A - 半導体装置および表示装置 - Google Patents
半導体装置および表示装置 Download PDFInfo
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- JP2009004757A JP2009004757A JP2008127971A JP2008127971A JP2009004757A JP 2009004757 A JP2009004757 A JP 2009004757A JP 2008127971 A JP2008127971 A JP 2008127971A JP 2008127971 A JP2008127971 A JP 2008127971A JP 2009004757 A JP2009004757 A JP 2009004757A
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Images
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
Abstract
【解決手段】単結晶半導体基板から、単結晶半導体層を分離し、それを絶縁基板に固定し、絶縁基板上でTFTを形成する。そして、そのTFTを用いて、駆動回路を形成する。そのTFTは、活性層が概ね単結晶状態にあるため、電流特性が良い。その結果、消費電力が低く、薄型で、小型な表示装置を形成することが出来る。また、コントローラとソースドライバ中のシフトレジスタを、同じ電源電圧で動作させる。これにより、消費電力を下げることが出来る。
【選択図】図1
Description
図1に示すように、ガラス基板101に、画素配列104、画素を駆動する駆動回路として、ソースドライバ102、ゲートドライバ103が配置されている。ただし、これに限定されず、さまざまな回路を配置出来る。これらの回路の全てまたは一部は、単結晶半導体基板から、単結晶半導体層を取り出し、それを絶縁基板に固定し、絶縁基板上で形成したTFT、または、単結晶半導体基板を絶縁基板に貼り付け、単結晶半導体基板を分離することによって、単結晶半導体基板の一部の単結晶半導体層を絶縁基板に固定し、絶縁基板上で形成されたTFTを用いて構成されている。なお、単結晶半導体基板から、単結晶半導体層を取り出し、それを絶縁基板に固定し、絶縁基板上で形成したTFT、または、単結晶半導体基板を絶縁基板に貼り付け、単結晶半導体基板を分離することによって、単結晶半導体基板の一部の単結晶半導体層を絶縁基板に固定し、絶縁基板上で形成されたTFTは、以下、単結晶TFTと呼ぶ。なお、単結晶TFTについて、その製造方法は、別の実施の形態で述べる。なお、本実施の形態では、絶縁基板として、ガラス基板を用いている。
本実施の形態では、第1の実施の形態で述べた構成の具体例を示す。図9(A)に、シフトレジスタの一例を示す。シフトレジスタは、クロックドインバータ801、インバータ802、NAND回路803などによって構成されている。コントローラ106から送られた信号は、配線800を通してシフトレジスタに入力される。それから、クロックドインバータ801、インバータ802、NAND回路803などを介して、配線804から出力される。なお、クロックドインバータ801には、クロック信号(CLK)およびクロック反転信号(CLKB)が入力されている。上記図3におけるラッチ1回路601、ラッチ2回路602も、クロックドインバータ、インバータ、などから構成されており、図9(A)と類似した回路構成となっている。
つぎに、単結晶TFTの製造方法について述べる。
SOI基板の製造方法について図25と図26を参照して説明する。図25(A)は、自然酸化膜が除去された単結晶シリコン基板2301にSiH4ガスとN2Oガスを用い、プラズマCVD法で100nmの厚さで酸化窒化シリコン層2305を形成する。さらにSiH4ガス、N2Oガス及びNH3ガスを用い、50nmの厚さで窒化酸化シリコン層2306を成膜する。
本実施形態においては、第1の実施の形態で述べた表示装置の画素構造について説明する。特に、有機EL素子を用いた表示装置の画素構造について説明する。
本実施形態においては、電子機器の例について説明する。
102 ソースドライバ
103 ゲートドライバ
104 画素配列
105 基板
106 コントローラ
107 電源
110 信号
111 第1の電源電圧
112 第2の電源電圧
210 信号
212 第3の電源電圧
301 昇圧回路
312 第2の電源電圧
313 第3の電源電圧
401 メモリ
402 グラフィック用プロセッサ
501 シフトレジスタ
502 レベルシフタ
503 サンプリング回路
601 ラッチ1回路
602 ラッチ2回路
603 DAC
701 シフトレジスタ
702 レベルシフタ
703 バッファ
Claims (9)
- 薄膜トランジスタを有するシフトレジスタと、コントローラとを有し、
前記薄膜トランジスタは、単結晶半導体基板を絶縁基板に貼り付けた後、前記単結晶半導体基板を分離することによって、前記絶縁基板に固定された単結晶半導体層を有し、
電源から前記コントローラおよび前記シフトレジスタに電源電圧が供給され、
前記電源電圧の大きさが3ボルト以下であることを特徴とする半導体装置。 - 薄膜トランジスタを有するシフトレジスタと、コントローラとを有し、
前記薄膜トランジスタは、単結晶半導体基板を絶縁基板に貼り付けた後、前記単結晶半導体基板を分離することによって、前記絶縁基板に固定された単結晶半導体層を有し、
電源から前記コントローラおよび前記シフトレジスタに電源電圧が供給され、
前記コントローラから信号が出力され、前記シフトレジスタに振幅の大きさが同じである前記信号が入力されることを特徴とする半導体装置。 - 請求項1または請求項2において、
さらに、前記シフトレジスタから出力された信号をレベルシフトするレベルシフタを有し、
該レベルシフタは、能動負荷を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか1項において、
前記絶縁基板は、ガラス基板であることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか1項において、
前記単結晶半導体基板は、シリコン基板であり、
前記単結晶半導体層は、シリコン層であることを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一項に記載の半導体装置および表示素子を具備する表示装置。
- 請求項1乃至請求項5のいずれか一項に記載の半導体装置および液晶素子を具備する液晶表示装置。
- 請求項1乃至請求項5のいずれか一項に記載の半導体装置および発光素子を具備する発光装置。
- 請求項1乃至請求項5のいずれか一項に記載の半導体装置および操作スイッチを具備する電子機器。
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US20080284710A1 (en) | 2008-11-20 |
JP2015179881A (ja) | 2015-10-08 |
US20140334596A1 (en) | 2014-11-13 |
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