JP2008532317A5 - - Google Patents

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JP2008532317A5
JP2008532317A5 JP2007558077A JP2007558077A JP2008532317A5 JP 2008532317 A5 JP2008532317 A5 JP 2008532317A5 JP 2007558077 A JP2007558077 A JP 2007558077A JP 2007558077 A JP2007558077 A JP 2007558077A JP 2008532317 A5 JP2008532317 A5 JP 2008532317A5
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substrate
backing
donor
thickness
backing substrate
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JP2007558077A
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JP2008532317A (ja
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Priority claimed from PCT/US2006/006497 external-priority patent/WO2006093817A2/en
Publication of JP2008532317A publication Critical patent/JP2008532317A/ja
Publication of JP2008532317A5 publication Critical patent/JP2008532317A5/ja
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JP2007558077A 2005-02-28 2006-02-24 レイヤ転送プロセス用の基板強化方法および結果のデバイス Pending JP2008532317A (ja)

Applications Claiming Priority (3)

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US65726205P 2005-02-28 2005-02-28
US65755805P 2005-02-28 2005-02-28
PCT/US2006/006497 WO2006093817A2 (en) 2005-02-28 2006-02-24 Substrate stiffness method and resulting devices

Related Child Applications (1)

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JP2013186479A Division JP5988389B2 (ja) 2005-02-28 2013-09-09 レイヤ転送プロセス用の基板強化方法および結果のデバイス

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JP2008532317A JP2008532317A (ja) 2008-08-14
JP2008532317A5 true JP2008532317A5 (https=) 2013-02-07

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JP2007558077A Pending JP2008532317A (ja) 2005-02-28 2006-02-24 レイヤ転送プロセス用の基板強化方法および結果のデバイス
JP2013186479A Expired - Lifetime JP5988389B2 (ja) 2005-02-28 2013-09-09 レイヤ転送プロセス用の基板強化方法および結果のデバイス

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Country Status (7)

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US (2) US8241996B2 (https=)
EP (1) EP1894234B1 (https=)
JP (2) JP2008532317A (https=)
KR (1) KR20070107180A (https=)
CN (1) CN101248519B (https=)
TW (1) TWI428956B (https=)
WO (1) WO2006093817A2 (https=)

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US20060108688A1 (en) * 2004-11-19 2006-05-25 California Institute Of Technology Large grained polycrystalline silicon and method of making same
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