JP2008519908A5 - - Google Patents

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Publication number
JP2008519908A5
JP2008519908A5 JP2007541369A JP2007541369A JP2008519908A5 JP 2008519908 A5 JP2008519908 A5 JP 2008519908A5 JP 2007541369 A JP2007541369 A JP 2007541369A JP 2007541369 A JP2007541369 A JP 2007541369A JP 2008519908 A5 JP2008519908 A5 JP 2008519908A5
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group
inhibitor
ratio
polyether
nitrogen
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JP2007541369A
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JP2008519908A (ja
JP4888913B2 (ja
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Priority claimed from PCT/US2005/040996 external-priority patent/WO2006053242A2/en
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Publication of JP2008519908A5 publication Critical patent/JP2008519908A5/ja
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Publication of JP4888913B2 publication Critical patent/JP4888913B2/ja
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JP2007541369A 2004-11-12 2005-11-14 マイクロ電子機器における銅電気沈積方法 Expired - Lifetime JP4888913B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62770004P 2004-11-12 2004-11-12
US60/627,700 2004-11-12
PCT/US2005/040996 WO2006053242A2 (en) 2004-11-12 2005-11-14 Copper electrodeposition in microelectronics

Publications (3)

Publication Number Publication Date
JP2008519908A JP2008519908A (ja) 2008-06-12
JP2008519908A5 true JP2008519908A5 (enExample) 2008-11-13
JP4888913B2 JP4888913B2 (ja) 2012-02-29

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JP2007541369A Expired - Lifetime JP4888913B2 (ja) 2004-11-12 2005-11-14 マイクロ電子機器における銅電気沈積方法

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US (3) US7303992B2 (enExample)
EP (1) EP1810322B1 (enExample)
JP (1) JP4888913B2 (enExample)
KR (1) KR101138588B1 (enExample)
CN (1) CN101099231B (enExample)
IN (1) IN2007DE03488A (enExample)
TW (2) TWI400365B (enExample)
WO (1) WO2006053242A2 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
JP2006336031A (ja) * 2005-05-31 2006-12-14 Toray Eng Co Ltd 硫酸銅メッキ浴及びそのメッキ浴を使用したメッキ方法
EP1969160B1 (de) * 2006-01-06 2011-04-27 Enthone, Incorporated Elektrolyt und verfahren zur abscheidung einer matten metallschicht
US7968455B2 (en) * 2006-10-17 2011-06-28 Enthone Inc. Copper deposition for filling features in manufacture of microelectronic devices
US20080111237A1 (en) * 2006-11-14 2008-05-15 Texas Instruments Incorporated Semiconductor device manufactured using an electrochemical deposition process for copper interconnects
JP5558675B2 (ja) * 2007-04-03 2014-07-23 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 金属メッキ組成物
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090250352A1 (en) * 2008-04-04 2009-10-08 Emat Technology, Llc Methods for electroplating copper
US8058126B2 (en) * 2009-02-04 2011-11-15 Micron Technology, Inc. Semiconductor devices and structures including at least partially formed container capacitors and methods of forming the same
KR101759352B1 (ko) 2009-04-07 2017-07-18 바스프 에스이 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물
WO2010115757A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5702360B2 (ja) 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物
JP5702359B2 (ja) * 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US9677188B2 (en) 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
WO2011064734A1 (en) 2009-11-30 2011-06-03 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
CN102648258B (zh) 2009-11-30 2015-04-08 巴斯夫欧洲公司 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂
CN106245073B (zh) 2010-05-19 2019-12-20 诺发系统有限公司 用金属电化学填充高纵横比的大型凹入特征的方法、水溶液电镀槽溶液、电镀设备以及系统
TWI572750B (zh) 2010-05-24 2017-03-01 安頌股份有限公司 直通矽穿孔之銅充填
MY175638A (en) 2010-09-08 2020-07-03 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectic and polysilicon films.
WO2012032469A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
EP2614122A4 (en) 2010-09-08 2014-01-15 Basf Se AQUEOUS CLEANSING COMPOSITIONS WITH N-SUBSTITUTED DIAZENIUM DIOXIDE AND / OR N'-HYDROXY DIAZENIUM OXIDE SALTS
US9070632B2 (en) 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
SG190334A1 (en) 2010-12-10 2013-06-28 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
EP2668317B1 (en) * 2011-01-26 2017-08-23 MacDermid Enthone Inc. Process for filling vias in the microelectronics
KR20140012660A (ko) 2011-03-11 2014-02-03 바스프 에스이 베이스 웨이퍼 관통 비아들을 형성하는 방법
JP5363523B2 (ja) * 2011-03-28 2013-12-11 上村工業株式会社 電気銅めっき用添加剤及び電気銅めっき浴
US9243339B2 (en) 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
US8791005B2 (en) 2012-06-18 2014-07-29 International Business Machines Corporation Sidewalls of electroplated copper interconnects
CN102995076B (zh) * 2012-12-05 2016-04-06 陕西师范大学 用于微盲孔填充的电镀铜溶液
US9613833B2 (en) 2013-02-20 2017-04-04 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
CN103103587B (zh) * 2013-02-22 2016-02-17 陕西师范大学 含巯基杂环化合物的电镀铜溶液
CN103103586B (zh) * 2013-02-22 2016-05-04 陕西师范大学 含有噻唑类化合物的电镀铜溶液
US20140238868A1 (en) * 2013-02-25 2014-08-28 Dow Global Technologies Llc Electroplating bath
US9435049B2 (en) 2013-11-20 2016-09-06 Lam Research Corporation Alkaline pretreatment for electroplating
KR20160090306A (ko) * 2013-11-25 2016-07-29 엔쏜 인코포레이티드 구리 전착
US9809891B2 (en) * 2014-06-30 2017-11-07 Rohm And Haas Electronic Materials Llc Plating method
TWI710671B (zh) 2014-09-15 2020-11-21 美商麥德美樂思公司 微電子技術中銅沈積用之平整劑
JP6359444B2 (ja) * 2014-12-25 2018-07-18 東京エレクトロン株式会社 配線層形成方法、配線層形成システムおよび記憶媒体
CN104532309A (zh) * 2014-12-31 2015-04-22 上海新阳半导体材料股份有限公司 能控制tsv深孔镀铜结晶及生长方式的添加剂b及其用途
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
CN105441994B (zh) * 2015-12-30 2017-09-19 上海新阳半导体材料股份有限公司 一种能用于提高凸点共面性的电镀液组合物
US10519557B2 (en) 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
US11124888B2 (en) 2016-09-22 2021-09-21 Macdermid Enthone Inc. Copper deposition in wafer level packaging of integrated circuits
CN109952390A (zh) * 2016-09-22 2019-06-28 麦克德米德乐思公司 在微电子件中的铜的电沉积
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US10000860B1 (en) * 2016-12-15 2018-06-19 Applied Materials, Inc. Methods of electrochemical deposition for void-free gap fill
CN115182004A (zh) 2016-12-20 2022-10-14 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
EP3415664B1 (en) * 2017-06-16 2019-09-18 ATOTECH Deutschland GmbH Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating
US10662586B2 (en) 2017-06-28 2020-05-26 Gpcp Ip Holdings Llc Cationic polyetheramine dispersants for preparing papermaking stock
CN108166030B (zh) * 2017-12-20 2022-11-08 深圳市板明科技股份有限公司 一种通孔直流电镀填孔药水
CN108441898B (zh) * 2018-04-18 2021-02-09 深圳海恩特科技有限公司 一种电镀溶液及方法
US11512406B2 (en) * 2019-10-17 2022-11-29 Rohm And Haas Electronic Materials Llc Method of enhancing copper electroplating
EP4176001A4 (en) 2020-07-02 2024-07-31 FUJIFILM Electronic Materials U.S.A, Inc. DIELECTRIC FILM FORMING COMPOSITION
US20230265576A1 (en) * 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
US20220213610A1 (en) * 2021-01-06 2022-07-07 Rohm And Haas Electronic Materials Llc Photoresist resolution capabilities by copper electroplating anisotropically
US20230322588A1 (en) * 2022-04-08 2023-10-12 Macdermid, Incorporated Electrochemical Oxidation of Amine Complexants in Waste Streams from Electroplating Processes
CN120051593A (zh) * 2022-10-10 2025-05-27 麦克德米德乐思公司 用于纳米孪晶铜形成的组合物和方法
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951822A (en) 1956-11-23 1960-09-06 Union Carbide Corp Preparation of polyglycidyl aromatic amines and resinous compositions made therefrom
US2931760A (en) 1957-09-25 1960-04-05 Leon R Westbrook Acid copper plating
US3328273A (en) 1966-08-15 1967-06-27 Udylite Corp Electro-deposition of copper from acidic baths
US3832291A (en) * 1971-08-20 1974-08-27 M & T Chemicals Inc Method of preparing surfaces for electroplating
DE2610705C3 (de) 1976-03-13 1978-10-19 Henkel Kgaa, 4000 Duesseldorf Saure galvanische Kupferbäder
US4512856A (en) * 1979-11-19 1985-04-23 Enthone, Incorporated Zinc plating solutions and method utilizing ethoxylated/propoxylated polyhydric alcohols
US4374709A (en) * 1980-05-01 1983-02-22 Occidental Chemical Corporation Process for plating polymeric substrates
US4336114A (en) * 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4384930A (en) 1981-08-21 1983-05-24 Mcgean-Rohco, Inc. Electroplating baths, additives therefor and methods for the electrodeposition of metals
US4898652A (en) * 1986-03-03 1990-02-06 Omi International Corporation Polyoxalkylated polyhydroxy compounds as additives in zinc alloy electrolytes
US5174887A (en) * 1987-12-10 1992-12-29 Learonal, Inc. High speed electroplating of tinplate
DE4126502C1 (enExample) * 1991-08-07 1993-02-11 Schering Ag Berlin Und Bergkamen, 1000 Berlin, De
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5612305A (en) 1995-01-12 1997-03-18 Huntsman Petrochemical Corporation Mixed surfactant systems for low foam applications
US6709562B1 (en) * 1995-12-29 2004-03-23 International Business Machines Corporation Method of making electroplated interconnection structures on integrated circuit chips
DE19653681C2 (de) * 1996-12-13 2000-04-06 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6113771A (en) * 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6172180B1 (en) * 1998-08-25 2001-01-09 Circe Biomedical, Inc. Highly branched block copolymers
EP1118696A4 (en) 1998-09-03 2007-10-17 Ebara Corp METHOD AND DEVICE FOR COATING SUBSTRATES
US6402923B1 (en) 2000-03-27 2002-06-11 Novellus Systems Inc Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element
US6338411B1 (en) * 1998-12-02 2002-01-15 Katabe Toyokazu Screw drum type filtration device
US6544399B1 (en) * 1999-01-11 2003-04-08 Applied Materials, Inc. Electrodeposition chemistry for filling apertures with reflective metal
US6379522B1 (en) * 1999-01-11 2002-04-30 Applied Materials, Inc. Electrodeposition chemistry for filling of apertures with reflective metal
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
EP1087432A1 (en) * 1999-09-24 2001-03-28 Interuniversitair Micro-Elektronica Centrum Vzw A method for improving the quality of a metal layer deposited from a plating bath
ATE260558T1 (de) 1999-08-18 2004-03-15 Huntsman Spec Chem Corp Auf polyetherdiaminen basierende oberflächenaktive hilfsstofffe und sie enthaltende zusammensetzungen
US6399479B1 (en) 1999-08-30 2002-06-04 Applied Materials, Inc. Processes to improve electroplating fill
US20040045832A1 (en) 1999-10-14 2004-03-11 Nicholas Martyak Electrolytic copper plating solutions
KR100659544B1 (ko) 1999-11-12 2006-12-19 에바라 유지라이토 코포레이션 리미티드 비아 필링 방법
US6491806B1 (en) 2000-04-27 2002-12-10 Intel Corporation Electroplating bath composition
DE60113333T2 (de) * 2000-07-01 2006-07-06 Shipley Co., L.L.C., Marlborough Metalllegierungszusammensetzungen und damit verbundene Plattierungsmethoden
US20020112964A1 (en) * 2000-07-12 2002-08-22 Applied Materials, Inc. Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
KR100366631B1 (ko) * 2000-09-27 2003-01-09 삼성전자 주식회사 폴리비닐피롤리돈을 포함하는 구리도금 전해액 및 이를이용한 반도체 소자의 구리배선용 전기도금방법
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
US6649038B2 (en) 2000-10-13 2003-11-18 Shipley Company, L.L.C. Electroplating method
EP1197586A3 (en) * 2000-10-13 2002-09-25 Shipley Company LLC Electrolyte
US6645364B2 (en) 2000-10-20 2003-11-11 Shipley Company, L.L.C. Electroplating bath control
US6660153B2 (en) * 2000-10-20 2003-12-09 Shipley Company, L.L.C. Seed layer repair bath
US20020134684A1 (en) 2000-10-25 2002-09-26 Shipley Company, L.L.C. Seed layer processes
JP2004518022A (ja) 2000-11-03 2004-06-17 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電子デバイス製造のための金属の電気化学的共析出
US6776893B1 (en) * 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
US6881319B2 (en) * 2000-12-20 2005-04-19 Shipley Company, L.L.C. Electrolytic copper plating solution and method for controlling the same
US20050081744A1 (en) * 2003-10-16 2005-04-21 Semitool, Inc. Electroplating compositions and methods for electroplating
US6740221B2 (en) * 2001-03-15 2004-05-25 Applied Materials Inc. Method of forming copper interconnects
US6863795B2 (en) * 2001-03-23 2005-03-08 Interuniversitair Microelektronica Centrum (Imec) Multi-step method for metal deposition
JP4392168B2 (ja) * 2001-05-09 2009-12-24 荏原ユージライト株式会社 銅めっき浴およびこれを用いる基板のめっき方法
DE60226196T2 (de) * 2001-05-24 2009-05-14 Shipley Co., L.L.C., Marlborough Zinn-Plattieren
US6551487B1 (en) * 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion
US6572753B2 (en) 2001-10-01 2003-06-03 Eci Technology, Inc. Method for analysis of three organic additives in an acid copper plating bath
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US6926922B2 (en) * 2002-04-09 2005-08-09 Shipley Company, L.L.C. PWB manufacture
US6812143B2 (en) * 2002-04-26 2004-11-02 International Business Machines Corporation Process of forming copper structures
JP2003321792A (ja) * 2002-04-26 2003-11-14 Ebara Corp 銅めっき浴および該めっき浴を用いる微細回路配線形成方法並びにこれに使用する装置
US6833479B2 (en) * 2002-08-16 2004-12-21 Cognis Corporation Antimisting agents
US6790773B1 (en) * 2002-08-28 2004-09-14 Novellus Systems, Inc. Process for forming barrier/seed structures for integrated circuits
US20040138075A1 (en) * 2002-11-01 2004-07-15 Brown David W. Coatings for metal containers, metalworking lubricant compositions, compositions for electroplating and electrowinning, latex compositions and processes therefor
JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
EP1422320A1 (en) * 2002-11-21 2004-05-26 Shipley Company, L.L.C. Copper electroplating bath
DE60336539D1 (de) 2002-12-20 2011-05-12 Shipley Co Llc Methode zum Elektroplattieren mit Umkehrpulsstrom
US20040154926A1 (en) * 2002-12-24 2004-08-12 Zhi-Wen Sun Multiple chemistry electrochemical plating method
EP1477588A1 (en) * 2003-02-19 2004-11-17 Rohm and Haas Electronic Materials, L.L.C. Copper Electroplating composition for wafers
US7105082B2 (en) * 2003-02-27 2006-09-12 Novellus Systems, Inc. Composition and method for electrodeposition of metal on a work piece
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
US7128822B2 (en) 2003-06-04 2006-10-31 Shipley Company, L.L.C. Leveler compounds
US20050274622A1 (en) * 2004-06-10 2005-12-15 Zhi-Wen Sun Plating chemistry and method of single-step electroplating of copper on a barrier metal
US20050045485A1 (en) 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
US20050095854A1 (en) 2003-10-31 2005-05-05 Uzoh Cyprian E. Methods for depositing high yield and low defect density conductive films in damascene structures
JP4540981B2 (ja) * 2003-12-25 2010-09-08 株式会社荏原製作所 めっき方法
US7182849B2 (en) 2004-02-27 2007-02-27 Taiwan Semiconducotr Manufacturing Co., Ltd. ECP polymer additives and method for reducing overburden and defects
US20050199507A1 (en) * 2004-03-09 2005-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical structures and compositions of ECP additives to reduce pit defects
US20050211564A1 (en) * 2004-03-29 2005-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method and composition to enhance wetting of ECP electrolyte to copper seed
US7771579B2 (en) 2004-12-03 2010-08-10 Taiwan Semiconductor Manufacturing Co. Electro chemical plating additives for improving stress and leveling effect
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
JP5702360B2 (ja) 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物
KR101759352B1 (ko) 2009-04-07 2017-07-18 바스프 에스이 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물
JP5702359B2 (ja) 2009-04-07 2015-04-15 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
US8772938B2 (en) 2012-12-04 2014-07-08 Intel Corporation Semiconductor interconnect structures
KR20140092626A (ko) 2013-01-16 2014-07-24 삼성전자주식회사 구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법
TWI710671B (zh) 2014-09-15 2020-11-21 美商麥德美樂思公司 微電子技術中銅沈積用之平整劑
CN109952390A (zh) 2016-09-22 2019-06-28 麦克德米德乐思公司 在微电子件中的铜的电沉积

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