IN2007DE03488A - - Google Patents
Info
- Publication number
- IN2007DE03488A IN2007DE03488A IN3488DE2007A IN2007DE03488A IN 2007DE03488 A IN2007DE03488 A IN 2007DE03488A IN 3488DE2007 A IN3488DE2007 A IN 3488DE2007A IN 2007DE03488 A IN2007DE03488 A IN 2007DE03488A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62770004P | 2004-11-12 | 2004-11-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2007DE03488A true IN2007DE03488A (en) | 2007-08-31 |
Family
ID=36337269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3488DE2007 IN2007DE03488A (en) | 2004-11-12 | 2007-05-10 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7303992B2 (en) |
EP (1) | EP1810322B1 (en) |
JP (1) | JP4888913B2 (en) |
KR (1) | KR101138588B1 (en) |
CN (1) | CN101099231B (en) |
IN (1) | IN2007DE03488A (en) |
TW (2) | TW200632147A (en) |
WO (1) | WO2006053242A2 (en) |
Families Citing this family (57)
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US7968455B2 (en) * | 2006-10-17 | 2011-06-28 | Enthone Inc. | Copper deposition for filling features in manufacture of microelectronic devices |
US20080111237A1 (en) * | 2006-11-14 | 2008-05-15 | Texas Instruments Incorporated | Semiconductor device manufactured using an electrochemical deposition process for copper interconnects |
JP5558675B2 (en) * | 2007-04-03 | 2014-07-23 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Metal plating composition |
TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
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KR101967134B1 (en) | 2010-09-08 | 2019-04-09 | 바스프 에스이 | Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts |
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WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
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CN110100048B (en) | 2016-12-20 | 2022-06-21 | 巴斯夫欧洲公司 | Composition for metal plating comprising an inhibiting agent for void-free filling |
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US10662586B2 (en) | 2017-06-28 | 2020-05-26 | Gpcp Ip Holdings Llc | Cationic polyetheramine dispersants for preparing papermaking stock |
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2005
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- 2005-11-14 JP JP2007541369A patent/JP4888913B2/en active Active
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2007
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2018
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US7303992B2 (en) | 2007-12-04 |
JP4888913B2 (en) | 2012-02-29 |
WO2006053242A3 (en) | 2006-06-29 |
US20070289875A1 (en) | 2007-12-20 |
EP1810322B1 (en) | 2022-07-27 |
WO2006053242A2 (en) | 2006-05-18 |
CN101099231B (en) | 2011-06-29 |
EP1810322A4 (en) | 2015-06-10 |
TWI400365B (en) | 2013-07-01 |
US20060141784A1 (en) | 2006-06-29 |
JP2008519908A (en) | 2008-06-12 |
KR20070086082A (en) | 2007-08-27 |
TW200632147A (en) | 2006-09-16 |
EP1810322A2 (en) | 2007-07-25 |
KR101138588B1 (en) | 2012-06-27 |
US7815786B2 (en) | 2010-10-19 |
CN101099231A (en) | 2008-01-02 |
USRE49202E1 (en) | 2022-09-06 |