JP6359444B2 - 配線層形成方法、配線層形成システムおよび記憶媒体 - Google Patents
配線層形成方法、配線層形成システムおよび記憶媒体 Download PDFInfo
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- JP6359444B2 JP6359444B2 JP2014263452A JP2014263452A JP6359444B2 JP 6359444 B2 JP6359444 B2 JP 6359444B2 JP 2014263452 A JP2014263452 A JP 2014263452A JP 2014263452 A JP2014263452 A JP 2014263452A JP 6359444 B2 JP6359444 B2 JP 6359444B2
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- 238000000034 method Methods 0.000 title claims description 77
- 238000003860 storage Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 144
- 230000004888 barrier function Effects 0.000 claims description 72
- 239000003054 catalyst Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 238000007747 plating Methods 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 24
- 239000002105 nanoparticle Substances 0.000 claims description 20
- 238000007772 electroless plating Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000007822 coupling agent Substances 0.000 claims description 5
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 238000004590 computer program Methods 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 61
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 29
- 230000007246 mechanism Effects 0.000 description 26
- 238000004140 cleaning Methods 0.000 description 10
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- 238000009792 diffusion process Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 5
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- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Description
図1乃至図5により本発明の一実施の形態について説明する。
このうち基板回転保持機構110は、図4および図5に示すように、ケーシング101内で上下に伸延する中空円筒状の回転軸111と、回転軸111の上端部に取り付けられたターンテーブル112と、ターンテーブル112の上面外周部に設けられ、基板2を支持するウエハチャック113と、回転軸111を回転駆動する回転機構162と、を有している。このうち回転機構162は、制御機構160により制御され、回転機構162によって回転軸111が回転駆動され、これによって、ウエハチャック113により支持されている基板2が回転される。
次に、基板2から飛散しためっき液や洗浄液などを排出する液排出機構120,125,130について、図4を参照して説明する。図4に示すように、ケーシング101内には、昇降機構164により上下方向に駆動され、排出口124,129,134を有するカップ105が配置されている。液排出機構120,125,130は、それぞれ排出口124,129,134に集められる液を排出するものとなっている。
次にこのような構成からなる本実施の形態の作用について、図2および図3により説明する。
以下、本実施の形態の変形例について説明する。
2a 凹部
10 配線層形成システム
11 基板搬送アーム
12 密着層形成部
13 触媒層形成部
14 バリア層形成部
15 焼きしめ部
16 シード層形成部
17 配線層形成部
18 カセットステーション
19 制御部
19A 記憶媒体
21 密着層
22 触媒層
23 バリア層
24 シード層
25 メタル層
26 レジストパターン
26a 開口
27 配線層
30 レジストパターン形成部
31 レジストパターン除去部
32 エッチング処理部
Claims (6)
- 基板に対して配線層を形成する配線層形成方法において、
凹部を有する基板を準備する工程と、
前記凹部を有する基板上にカップリング剤を吸着して、基板上に密着層を形成する工程と、
前記密着層上にナノ粒子からなる触媒を吸着して、触媒層を形成する工程と、
前記基板の表面および前記凹部内面にバリア層およびシード層からなるメタル層を無電解めっき処理により形成する工程と、
前記基板のメタル層上に前記凹部を囲む開口を有するレジストパターンを形成する工程と、
前記レジストパターンの開口からめっき液を供給するめっき処理により前記凹部内に配線層を設ける工程と、
前記基板上の前記メタル層のうち、前記配線層の外方に位置するメタル層をエッチング処理により除去して、前記配線層の外方へ突出する前記密着層および前記メタル層をなくす工程とを備え、
前記メタル層の厚みは、150nm以下となっていることを特徴とする配線層形成方法。 - 前記バリア層はコバルト又はコバルト合金を含むことを特徴とする請求項1記載の配線層形成方法。
- 前記シード層は銅又は銅合金を含むことを特徴とする請求項1または2記載の配線層形成方法。
- 前記配線層は銅を含むめっき液を用いた電解めっき処理により形成されていることを特徴とする請求項1乃至3のいずれか記載の配線層形成方法。
- 基板に対して配線層を形成する配線層形成システムにおいて、
凹部を有する基板上にカップリング剤を吸着して、基板上に密着層を形成する密着層形成部と、
前記密着層上にナノ粒子からなる触媒を吸着して、触媒層を形成する触媒層形成部と、
前記基板の表面および凹部内面にバリア層およびシード層からなるメタル層を無電解めっき処理により形成するメタル形成部と、
前記基板上に前記凹部を囲む開口を有するレジストパターンを形成するレジストパターン形成部と、
前記レジストパターンの開口からめっき液を供給するめっき処理により前記凹部内に配線層を設ける配線層形成部と、
前記基板上の前記メタル層のうち、前記配線層の外方に位置するメタル層をエッチング処理により除去して、前記配線層の外方へ突出する前記密着層および前記メタル層をなくすエッチング処理部とを備え、
前記メタル層の厚みは、150nm以下となっていることを特徴とする配線層形成システム。 - 配線層形成システムに配線層形成方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
前記配線層形成方法は、
凹部を有する基板を準備する工程と、
前記凹部を有する基板上にカップリング剤を吸着して、基板上に密着層を形成する工程と、
前記密着層上にナノ粒子からなる触媒を吸着して、触媒層を形成する工程と、
前記基板の表面および前記凹部内面にバリア層およびシード層からなるメタル層を無電解めっき処理により形成する工程と、
前記基板のメタル層上に前記凹部を囲む開口を有するレジストパターンを形成する工程と、
前記レジストパターンの開口からめっき液を供給するめっき処理により前記凹部内に配線層を設ける工程と、
前記基板上の前記メタル層のうち、前記配線層の外方に位置するメタル層をエッチング処理により除去して、前記配線層の外方へ突出する前記密着層および前記メタル層をなくす工程とを備え、
前記メタル層の厚みは、150nm以下となっていることを特徴とする記憶媒体。
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