JP6328576B2 - 半導体装置、めっき処理方法、めっき処理システムおよび記憶媒体 - Google Patents
半導体装置、めっき処理方法、めっき処理システムおよび記憶媒体 Download PDFInfo
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- JP6328576B2 JP6328576B2 JP2015033354A JP2015033354A JP6328576B2 JP 6328576 B2 JP6328576 B2 JP 6328576B2 JP 2015033354 A JP2015033354 A JP 2015033354A JP 2015033354 A JP2015033354 A JP 2015033354A JP 6328576 B2 JP6328576 B2 JP 6328576B2
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- 238000007747 plating Methods 0.000 title claims description 185
- 238000000034 method Methods 0.000 title claims description 47
- 238000003860 storage Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title description 11
- 229910052751 metal Inorganic materials 0.000 claims description 167
- 239000002184 metal Substances 0.000 claims description 167
- 239000000758 substrate Substances 0.000 claims description 139
- 239000003054 catalyst Substances 0.000 claims description 134
- 230000004888 barrier function Effects 0.000 claims description 58
- 238000001179 sorption measurement Methods 0.000 claims description 43
- 238000005304 joining Methods 0.000 claims description 13
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 238000004590 computer program Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 20
- 229910000531 Co alloy Inorganic materials 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 description 48
- 230000007246 mechanism Effects 0.000 description 29
- 239000007788 liquid Substances 0.000 description 21
- 239000002105 nanoparticle Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 n-Pd Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C25D3/00—Electroplating: Baths therefor
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Description
図1乃至図7により本発明の一実施の形態について説明する。
このうち基板回転保持機構110は、図4および図5に示すように、ケーシング101内で上下に伸延する中空円筒状の回転軸111と、回転軸111の上端部に取り付けられたターンテーブル112と、ターンテーブル112の上面外周部に設けられ、基板2を支持するウエハチャック113と、回転軸111を回転駆動する回転機構162と、を有している。このうち回転機構162は、制御機構160により制御され、回転機構162によって回転軸111が回転駆動され、これによって、ウエハチャック113により支持されている基板2が回転される。
次に、基板2の表面にめっき液や洗浄液などを供給する液供給機構30,90について、図4および図5を参照して説明する。液供給機構30,90は、基板2の表面に対してめっき処理を施すめっき液を供給するめっき液供給機構30と、基板2の表面に洗浄処理液を供給する洗浄処理液供給機構90と、を含んでいる。
洗浄処理液供給機構90は、後述するように基板2の洗浄工程において用いられるものであり、図4に示すように、ノズルヘッド104に取り付けられたノズル92を含んでいる。この場合、ノズル92から、洗浄処理液またはリンス処理液のいずれかが選択的に基板2の表面に吐出される。
次に、基板2から飛散しためっき液や洗浄液などを排出する液排出機構120,125,130について、図4を参照して説明する。図4に示すように、ケーシング101内には、昇降機構164により上下方向に駆動され、排出口124,129,134を有するカップ105が配置されている。液排出機構120,125,130は、それぞれ排出口124,129,134に集められる液を排出するものとなっている。
なお、上記実施例では電解Cuめっき処理で電解Cuめっき層が充填される例を示したが、これに限ることはなく、電解Cuめっき処理に替わり無電解Cuめっき処理でCuめっき層を形成してもよい。
2 基板
2a 凹部
10 めっき処理システム
11 基板搬送アーム
12 密着層形成部
13 触媒吸着層形成部
13A 接合金属層形成部
14 めっき層形成部
15 焼きしめ部
16 無電解Cuめっき層形成部
17 電解Cuめっき層形成部
18 カセットステーション
19 制御部
19A 記憶媒体
21 密着層
22 触媒吸着層
22A 接合金属層
23 バリアメタルめっき層
24 無電解Cuめっき層
25 電解Cuめっき層
Claims (4)
- 基板に対してめっき処理を施すめっき処理方法において、
基板を準備する工程と、
前記基板に触媒金属を含む触媒溶液を供給して前記基板上に触媒吸着層を形成する工程と、
前記基板に接合金属を含む接合金属溶液を供給して前記触媒吸着層上に前記触媒金属を触媒とするめっき処理によりNiまたはNi合金を含む接合金属層を形成する工程と、
前記基板にバリアメタルめっき液を供給して前記接合金属層上に前記接合金属を触媒とするめっき処理によりCoまたはCo合金を含むバリアメタルめっき層を形成する工程とを備え、
前記基板に前記接合金属層を形成した後、前記基板を焼きしめ、
前記基板に前記バリアメタルめっき層を形成した後、前記基板を再度焼きしめ、
前記接合金属層の厚みは、前記バリアメタルめっき層より薄く、バリア機能をもたない厚みとなる
ことを特徴とするめっき処理方法。 - 前記触媒吸着層の触媒金属は、n−Pdまたは塩化Pdを含むことを特徴とする請求項1記載のめっき処理方法。
- 前記バリアメタルめっき層は単層構造からなることを特徴とする請求項1または2記載のめっき処理方法。
- めっき処理システムにめっき処理方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
めっき処理方法は、基板を準備する工程と、
前記基板に触媒金属を含む触媒溶液を供給して前記基板上に触媒吸着層を形成する工程と、
前記基板に接合金属を含む接合金属溶液を供給して前記触媒吸着層上に前記触媒金属を触媒とするめっき処理によりNiまたはNi合金を含む接合金属層を形成する工程と、
前記基板にバリアメタルめっき液を供給して前記接合金属層上に前記接合金属を触媒とするめっき処理によりCoまたはCo合金を含むバリアメタルめっき層を形成する工程とを備え、
前記基板に前記接合金属層を形成した後、前記基板を焼きしめ、
前記基板に前記バリアメタルめっき層を形成した後、前記基板を再度焼きしめ、
前記接合金属層の厚みは、前記バリアメタルめっき層より薄く、バリア機能をもたない厚みとなる
ことを特徴とする記憶媒体。
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TW105104616A TWI669414B (zh) | 2015-02-23 | 2016-02-17 | 半導體裝置、鍍敷處理方法、鍍敷處理系統及記憶媒體 |
KR1020160019200A KR102570852B1 (ko) | 2015-02-23 | 2016-02-18 | 반도체 장치, 도금 처리 방법, 도금 처리 시스템 및 기억 매체 |
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