JP6316768B2 - 密着層形成方法、密着層形成システムおよび記憶媒体 - Google Patents
密着層形成方法、密着層形成システムおよび記憶媒体 Download PDFInfo
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- JP6316768B2 JP6316768B2 JP2015064582A JP2015064582A JP6316768B2 JP 6316768 B2 JP6316768 B2 JP 6316768B2 JP 2015064582 A JP2015064582 A JP 2015064582A JP 2015064582 A JP2015064582 A JP 2015064582A JP 6316768 B2 JP6316768 B2 JP 6316768B2
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- 238000006467 substitution reaction Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
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- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
Description
図1乃至図7により本発明の一実施の形態について説明する。
このうち基板回転保持機構110は、図5および図6に示すように、ケーシング101内で上下に伸延する中空円筒状の回転軸111と、回転軸111の上端部に取り付けられたターンテーブル112と、ターンテーブル112の上面外周部に設けられ、基板2を支持するウエハチャック113と、回転軸111を回転駆動する回転機構162と、を有している。このうち回転機構162は、制御機構160により制御され、回転機構162によって回転軸111が回転駆動され、これによって、ウエハチャック113により支持されている基板2が回転される。
次に、基板2から飛散したカップリング剤や洗浄液などを排出する液排出機構120,125,130について、図5を参照して説明する。図5に示すように、ケーシング101内には、昇降機構164により上下方向に駆動され、排出口124,129,134を有するカップ105が配置されている。液排出機構120,125,130は、それぞれ排出口124,129,134に集められる液を排出するものとなっている。
次にこのような構成からなる本実施の形態の作用について、図2乃至図4により説明する。
次に本発明の変形例について説明する。上記実施の形態において、密着層21上に触媒層22を介してNiまたはNi系合金からなるめっき層23を形成した例を示したが、NiまたはNi系合金の代わりにCo−W−Bを含むめっき層23を形成してもよい。
2a 凹部
10 めっき処理システム
11 基板搬送アーム
12 密着層形成部
13 触媒層形成部
14 めっき層形成部
15 めっき層焼きしめ部
15A ホットプレート
15a 密閉ケーシング
15b 排気口
15c N2ガス供給口
16 無電解Cuめっき層形成部
17 電解Cuめっき層形成部
18 カセットステーション
19 制御部
19A 記憶媒体
21 密着層
22 触媒層
23 めっき層
24 無電解Cuめっき層
25 電解Cuめっき層
32 吐出ノズル
92 ノズル
104 ノズルヘッド
Claims (8)
- 基板に対して無電解めっき層形成用の密着層を形成する密着層形成方法において、
基板を準備する工程と、
前記基板上を回転させながら、前記基板上にカップリング剤を供給する工程とを備え、 前記カップリング剤を供給する際、前記基板上をウェット状態に保ちながら、水と親和性のある有機溶剤で希釈されたカップリング剤を供給し、
前記カップリング剤を供給する前に、前記基板を水と親和性のある有機溶剤で予めウェット状態に保つことを特徴とする密着層形成方法。 - 前記カップリング剤を供給する際、前記基板を300rpm以下の回転数で回転させることを特徴とする請求項1記載の密着層形成方法。
- 前記カップリング剤は、イソプロピルアルコールにより希釈されることを特徴とする請求項1または2記載の密着層形成方法。
- 前記カップリング剤は、イソプロピルアルコールにより10〜1000倍だけ希釈されることを特徴とする請求項3載の密着層形成方法。
- 前記カップリング剤を供給した後に、前記基板に対してリンス処理を施すことにより、余分なカップリング剤を除去することを特徴とする請求項1乃至4のいずれか記載の密着層形成方法。
- 基板に対して密着層を形成する密着層形成システムにおいて、
基板を回転自在に保持する基板回転保持機構と、
前記基板上にカップリング剤を供給して、前記基板表面全域に密着層を形成するカップリング剤供給部と、を備え、
前記カップリング剤供給部は、水と親和性のある有機溶媒で希釈されたカップリング剤を供給し、
前記カップリング剤を供給する前に、前記基板を水と親和性のある有機溶剤で予めウェット状態に保つことを特徴とする密着層形成システム。 - 前記基板回転保持機構は、前記基板を300rpm以下の回転数で回転させることを特徴とする請求項6記載の密着層形成システム。
- 密着層形成システムに無電解めっき層形成用の密着層形成方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
前記密着層形成方法は、
基板を準備する工程と、
前記基板上を回転させながら、前記基板上にカップリング剤を供給する工程とを備え、 前記カップリング剤を供給する際、前記基板上をウェット状態に保ちながら、水と親和性のある有機溶剤で希釈されたカップリング剤を供給し、
前記カップリング剤を供給する前に、前記基板を水と親和性のある有機溶剤で予めウェット状態に保つことを特徴とする記憶媒体。
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