WO2013145979A1 - めっき処理方法、めっき処理システムおよび記憶媒体 - Google Patents
めっき処理方法、めっき処理システムおよび記憶媒体 Download PDFInfo
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- WO2013145979A1 WO2013145979A1 PCT/JP2013/054505 JP2013054505W WO2013145979A1 WO 2013145979 A1 WO2013145979 A1 WO 2013145979A1 JP 2013054505 W JP2013054505 W JP 2013054505W WO 2013145979 A1 WO2013145979 A1 WO 2013145979A1
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- WIPO (PCT)
- Prior art keywords
- plating
- layer
- substrate
- vacuum deposition
- plating layer
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 89
- 238000003860 storage Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 205
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- 239000003054 catalyst Substances 0.000 claims abstract description 38
- 230000008569 process Effects 0.000 claims description 54
- 238000001179 sorption measurement Methods 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 12
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- 229910052751 metal Inorganic materials 0.000 description 6
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
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- 239000006087 Silane Coupling Agent Substances 0.000 description 3
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- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
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- 238000009623 Bosch process Methods 0.000 description 1
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
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- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
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- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Definitions
- the present invention relates to a plating method, a plating system, and a storage medium for plating a substrate.
- LSIs semiconductor devices such as LSIs are required to have higher density in order to cope with problems such as space saving of mounting area and improvement of processing speed.
- a multilayer wiring technique for manufacturing a multilayer substrate such as a three-dimensional LSI by stacking a plurality of wiring substrates is known.
- a through via hole penetrating the wiring board and embedded with a conductive material such as copper (Cu) is provided in the wiring board.
- a conductive material such as copper (Cu)
- An electroless plating method is known as an example of a technique for producing a through via hole in which a conductive material is embedded.
- a substrate having a recess is prepared, and then a barrier film as a Cu diffusion prevention film is formed in the recess of the substrate, and a seed film is not formed on the barrier film.
- a method of forming by electrolytic Cu plating is known. Thereafter, Cu is embedded in the recesses by electrolytic Cu plating, and the substrate embedded with Cu is thinned by a polishing method such as chemical mechanical polishing, thereby producing a wiring substrate having a through via hole embedded with Cu.
- a catalyst is adsorbed on the board in advance to form a catalyst adsorption layer, and a plating process is performed on the catalyst adsorption layer to thereby form a Co—WB layer.
- a barrier film made of is obtained.
- the barrier film is then baked to remove internal moisture and to strengthen the intermetallic bond.
- the barrier film as the Cu diffusion preventing film is formed by plating, and then baked to enhance the moisture removal inside and the bond between metals.
- the substrate has a recess, and the barrier film as the Cu diffusion preventing film is formed on the inner surface of the recess and on the outer surface of the substrate outside the recess.
- the barrier film formed on the outer surface of the substrate may be peeled off by an external force or the like acting on the substrate during substrate processing. In this case, a defect occurs in the manufactured multilayer substrate.
- the present invention has been made in consideration of the above points.
- a plating layer such as a barrier film is formed on a substrate by plating
- the plating layer formed on the outer surface of the substrate outside the recesses is formed from the substrate.
- An object is to provide a plating method, a plating system, and a storage medium that do not peel.
- the present invention relates to a plating method for performing a plating process on a substrate, a step of preparing the substrate, a step of performing a vacuum deposition process on the substrate to form a vacuum deposition process layer on the substrate, A plating process using a plating solution to form a plating layer having a specific function on the vacuum deposition layer.
- the present invention relates to a plating system that performs plating on a substrate, and performs vacuum deposition processing on the substrate to form a vacuum deposition processing layer on the substrate surface, and plating on the substrate.
- the substrate is transported between a plating layer forming unit that forms a plating layer having a specific function on the vacuum deposition processing layer, a vacuum deposition processing layer forming unit, and a plating layer forming unit by performing plating using a liquid.
- a control unit that controls the substrate deposition unit, the vacuum deposition process layer forming unit, the plating layer forming unit, and the substrate transport unit.
- the present invention relates to a storage medium storing a computer program for causing a plating system to execute a plating method.
- the plating method includes: a step of preparing a substrate; And forming a plating layer having a specific function on the vacuum deposition treatment layer by performing a plating treatment on the substrate using a plating solution. Storage medium.
- the vacuum deposition process is performed on the substrate to form the vacuum deposition process layer on the substrate, the plating process is performed on the substrate, and the plating layer is formed on the vacuum deposition process layer.
- the vacuum deposition process layer is formed on the substrate as a base layer, and the surface of the substrate is smoothed by the vacuum deposition process layer as the base layer. For this reason, the plating layer can be formed on the substrate with good adhesion by the vacuum deposition treatment layer as an underlayer, and the plating layer is prevented from dropping or peeling off due to an external force acting on the substrate during the substrate processing. be able to.
- FIG. 1 is a block diagram illustrating a plating system according to an embodiment of the present invention.
- FIG. 2 is a flowchart showing a plating method in the embodiment of the present invention.
- FIGS. 3A to 3G are views showing a substrate on which a plating method according to an embodiment of the present invention is applied.
- FIG. 4 is a cross-sectional view showing a plating layer laminate as a Cu diffusion preventing film.
- FIG. 5 is a side sectional view showing a plating layer forming portion.
- FIG. 6 is a plan view showing a plating layer forming portion.
- FIG. 7 is a side cross-sectional view showing a plated layer baking portion.
- FIG. 8 is a side sectional view showing a vacuum deposition processing layer forming portion.
- FIG. 1 is a block diagram illustrating a plating system according to an embodiment of the present invention.
- FIG. 2 is a flowchart showing a plating method in the embodiment of the present invention.
- FIG. 9 is a cross-sectional view showing a plating layer laminate as a seed film showing a modification of the present invention.
- 10 (a) and 10 (b) are diagrams showing a vacuum deposition process layer formed on a substrate.
- FIG. 11 is a view showing a substrate on which a plating method according to a modification of the present invention is applied.
- the plating system 10 performs a plating process on a substrate (silicon substrate) 2 having a recess 2a such as a semiconductor wafer (see FIGS. 3A to 3G).
- Such a plating system 10 includes a cassette station 18 on which a cassette (not shown) containing the substrate 2 is placed, a substrate transfer arm 11 that takes out the substrate 2 from the cassette on the cassette station 18 and conveys it, And a travel path 11a on which the substrate transfer arm 11 travels.
- a vacuum deposition process is performed on the substrate 2 to form a vacuum deposition process layer 2 ⁇ / b> A on the surface of the substrate 2, and a vacuum deposition process layer 2 ⁇ / b> A of the substrate 2.
- a catalyst adsorption layer forming portion 13 to be formed and a plating layer forming portion 14 for forming plating layers 23a and 23b functioning as a Cu diffusion prevention film (barrier film) to be described later are disposed on the catalyst adsorption layer 22 of the substrate 2. Yes.
- An electroless Cu plating layer forming portion 16 for forming a functioning electroless copper plating layer (electroless Cu plating layer) 24 is disposed.
- an electrolysis for filling an electrolytic copper plating layer (electrolytic Cu plating layer) 25 with the electroless Cu plating layer 24 as a seed film in the recess 2a formed in the substrate 2 adjacent to the plating layer baked portion 15 is performed.
- a Cu plating layer forming part 17 is arranged.
- the first plating layer 23 a is baked in the plating layer baking unit 15. Further, in the plating layer forming part 14, the second plating layer 23 b is formed so as to overlap the baked first plating layer 23 a, and this second plating layer 23 b is baked in the plating layer baking part 15.
- the plating layer laminate 23 composed of the first plating layer 23a and the second plating layer 23b is formed on the catalyst adsorption layer 22 of the substrate 2.
- Both the first plating layer 23a and the second plating layer 23b of the plating layer laminate 23 having such a configuration function as a Cu diffusion prevention film (barrier film).
- each component of the plating processing system described above for example, the cassette station 18, the substrate transfer arm 11, the vacuum deposition processing layer forming unit 27, the adhesion layer forming unit 12, the catalyst adsorption layer forming unit 13, the plating layer forming unit 14, and the plating layer.
- the baking unit 15, the electroless Cu plating layer forming unit 16 and the electrolytic Cu plating layer forming unit 17 are all driven and controlled by the control unit 19 in accordance with various programs recorded in the storage medium 19 ⁇ / b> A provided in the control unit 19.
- the storage medium 19A stores various programs such as various setting data and a plating program described later.
- known media such as a computer-readable memory such as ROM and RAM, and a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk can be used.
- a vacuum deposition treatment layer forming part 27 a plating layer forming part 14 for forming a first plating layer 23a and a second plating layer 23b functioning as a Cu diffusion preventing film (barrier film), a plating layer baking part 15 and The electroless Cu plating layer forming part 16 will be further described.
- the vacuum deposition processing layer forming unit 27 includes a hermetically sealed casing 27a, a substrate holder 27d provided inside the sealed casing 27a for holding the substrate 2, and a substrate held by the substrate holder 27d. And an evaporation source 27 ⁇ / b> A in which metal deposited on the two surfaces is stored.
- the sealed casing 27a is provided with a vacuum exhaust port 27b for evacuating the sealed casing 27a, and a vacuum pump (not shown) is connected to the vacuum exhaust port 27b, so that the sealed casing 27a functions as a vacuum chamber.
- a shutter 27c is provided between the substrate 2 held by the substrate holder 27d and the evaporation source 27A, and the heater 27e covers the substrate holder 27d above the substrate holder 27d. Is provided.
- a PVD process is performed on the substrate 2 and a vacuum deposition process layer 2A is formed on the substrate 2 by the PVD process.
- the vacuum deposition process layer 2A formed on the substrate 2 by the PVD process includes a vacuum deposition process layer formed by depositing Pd or Ru, and a vacuum deposition process layer formed by depositing PdN or RuN.
- a vacuum deposition process layer formed by depositing Ti or Ta, a vacuum deposition process layer formed by depositing TiN or TaN, or a vacuum deposition process layer formed by depositing Ru can be considered.
- a treatment layer such as a laminate of Pd and PdN, a laminate of Ru and RuN, a laminate of Ti and TiN, and a laminate of Ta and TaN can be considered.
- vacuum deposition processing layer forming unit 27 a CVD processing apparatus that forms the vacuum deposition processing layer 2A on the substrate 2 by CVD processing instead of PVD processing can be used.
- a processing layer formed by depositing Ru can be considered.
- the vacuum deposition process layer 2A is not limited to the metal as described above, and may be any metal that has adhesiveness with each layer on the vacuum deposition process layer 2A and is capable of electroless reaction. Good.
- the vacuum deposition processing layer 2A functions as a base layer, and the surface of the substrate 2 can be smoothed. For this reason, the adhesiveness of each layer on the vacuum evaporation processing layer 2A mentioned later, for example, the contact
- the plating layer forming part 14 and the electroless Cu plating layer forming part 16 can each be constituted by the plating treatment apparatuses 14 and 16 shown in FIGS.
- Such plating apparatuses 14 and 16 are as shown in FIG. 5 and FIG.
- the plating processing apparatuses 14 and 16 are provided with a substrate rotation holding mechanism (substrate housing portion) 110 for rotating and holding the substrate 2 inside the casing 101, and the surface of the substrate 2.
- Liquid supply mechanisms 30 and 90 for supplying a plating solution and a cleaning solution, a cup 105 for receiving a plating solution and a cleaning solution scattered from the substrate 2, and outlets 124 and 129 for discharging the plating solution and the cleaning solution received by the cup 105, 134, liquid discharge mechanisms 120, 125, and 130 for discharging the liquid collected at the discharge port, substrate rotation holding mechanism 110, liquid supply mechanisms 30, 90, cup 105, and liquid discharge mechanisms 120, 125, and 130 are controlled. And a control mechanism 160.
- the substrate rotation holding mechanism 110 includes a hollow cylindrical rotating shaft 111 extending vertically in the casing 101 and a turntable 112 attached to the upper end of the rotating shaft 111, as shown in FIGS. And a wafer chuck 113 that is provided on the outer peripheral portion of the upper surface of the turntable 112 and supports the substrate 2, and a rotation mechanism 162 that rotates the rotation shaft 111.
- the rotation mechanism 162 is controlled by the control mechanism 160, and the rotation shaft 111 is rotationally driven by the rotation mechanism 162, whereby the substrate 2 supported by the wafer chuck 113 is rotated.
- the liquid supply mechanisms 30 and 90 include a plating liquid supply mechanism 30 that supplies a plating liquid that performs plating on the surface of the substrate 2, a cleaning processing liquid supply mechanism 90 that supplies a cleaning processing liquid to the surface of the substrate 2, Is included.
- the discharge nozzle 32 is attached to the nozzle head 104.
- the nozzle head 104 is attached to the tip of an arm 103.
- the arm 103 can be extended in the vertical direction and is fixed to a support shaft 102 that is rotationally driven by a rotation mechanism 165.
- the plating solution supply pipe 33 of the plating solution supply mechanism 30 is disposed inside the arm 103. With such a configuration, the plating solution can be discharged from a desired height to any location on the surface of the substrate 2 via the discharge nozzle 32.
- the cleaning processing liquid supply mechanism 90 is used in the cleaning process of the substrate 2 and includes a nozzle 92 attached to the nozzle head 104 as shown in FIG. In this case, either the cleaning processing liquid or the rinsing processing liquid is selectively discharged from the nozzle 92 onto the surface of the substrate 2.
- liquid discharge mechanism 120, 125, and 130 for discharging the plating solution and the cleaning solution scattered from the substrate 2 will be described with reference to FIG.
- a cup 105 that is driven up and down by an elevating mechanism 164 and has outlets 124, 129, and 134 is disposed in the casing 101.
- the liquid discharge mechanisms 120, 125, and 130 discharge the liquid collected at the discharge ports 124, 129, and 134, respectively.
- the plating solution discharge mechanisms 120 and 125 have recovery flow paths 122 and 127 and waste flow paths 123 and 128 that are switched by flow path switches 121 and 126, respectively.
- the recovery channels 122 and 127 are channels for recovering and reusing the plating solution
- the discard channels 123 and 128 are channels for discarding the plating solution.
- the treatment liquid discharge mechanism 130 is provided with only the waste flow path 133.
- a recovery channel 122 of a plating solution discharge mechanism 120 that discharges the plating solution 35 is connected to the outlet side of the substrate storage unit 110.
- a cooling buffer 120 ⁇ / b> A for cooling the plating solution 35 is provided in the vicinity of the outlet side of the portion 110.
- the plating layer baking unit 15 includes a hermetically sealed casing 15a and a hot plate 15A disposed inside the sealed casing 15a.
- the inside of the sealed casing 15a is exhausted through the exhaust port 15b, and the inside of the sealed casing 15a can be maintained in an inert atmosphere by filling the inside of the sealed casing 15a with N 2 gas.
- a recess 2a is formed on a substrate (silicon substrate) 2 made of a semiconductor wafer or the like, and the substrate 2 on which the recess 2a is formed is transferred into the plating system 10 according to the present invention.
- a conventionally known method can be appropriately employed. Specifically, for example, as a dry etching technique, a general-purpose technique using a fluorine-based or chlorine-based gas or the like can be applied. In particular, a hole having a large aspect ratio (hole depth / hole diameter) is formed.
- ICP-RIE Inductively Coupled Plasma Reactive Ion Etching
- sulfur hexafluoride A method called a Bosch process in which an etching step using SF6) and a protection step using a Teflon-based gas such as C4F8 are repeated can be suitably employed.
- the vacuum deposition processing layer 2A is formed on the substrate 2 having the recess 2a (FIGS. 2 and 3A).
- the substrate 2 is subjected to PVD treatment, and the vacuum vapor deposition treatment layer 2A is formed on the substrate 2 by this PVD treatment.
- the vacuum deposition process layer 2 ⁇ / b> A may be formed on the substrate 2 by performing a CVD process on the substrate 2.
- the vacuum deposition process layer 2A functions as a base layer, smoothes the surface of the substrate 2, and then each layer and substrate formed on the substrate 2 2 can be improved.
- the substrate 2 is sent to the adhesion layer forming unit 12 by the substrate transfer arm 11.
- the adhesion layer 21 is formed on the vacuum deposition layer 2A of the substrate 2 having the recess 2a in the adhesion layer forming part 12 (FIG. 2 and FIG. 3B).
- the adhesion layer forming part 12 has a vacuum chamber (not shown) having a heating part, and in this adhesion layer forming part 12, a silane coupling agent or the like is formed on the vacuum deposition treatment layer 2A of the substrate 2 having the recess 2a.
- the coupling agent is adsorbed, and the adhesion layer 21 is thus formed on the substrate 2 (SAM treatment).
- SAM treatment The adhesion layer 21 formed by adsorbing the silane coupling agent improves the adhesion between the catalyst adsorption layer 22 and the substrate 2 described later.
- the substrate 2 on which the adhesion layer 21 is formed in the adhesion layer forming unit 12 is sent to the catalyst adsorption layer forming unit 13 by the substrate transfer arm 11.
- the catalyst adsorption layer forming unit 13 pd ions, for example, that serve as a catalyst are adsorbed on the adhesion layer 21 of the substrate 2 to form the catalyst adsorption layer 22 (FIG. 3C).
- a treatment in which a palladium chloride aqueous solution is sprayed onto the substrate 2 with a nozzle and Pd ions serving as a catalyst are adsorbed on the surface of the substrate 2 can be employed.
- a tin chloride solution is sprayed on the substrate 2 to adsorb tin ions on the surface of the substrate 2, and then an aqueous palladium chloride solution is sprayed on the substrate 2 to replace the tin ions with Pd ions, thereby replacing the Pd ions.
- sodium hydroxide is sprayed onto the substrate 2 to remove excess tin ions.
- the substrate 2 is sent to the plating layer formation unit 14 by the substrate transfer arm 11.
- a first plating layer 23a that functions as a Cu diffusion prevention film (barrier film) is formed on the catalyst adsorption layer 22 of the substrate 2 (see FIGS. 3D and 23). ).
- the plating layer forming unit 14 includes a plating apparatus as shown in FIGS. 5 and 6, and forms the first plating layer 23 a by performing an electroless plating process on the catalyst adsorption layer 22 of the substrate 2. be able to.
- a plating solution containing Co—WB can be used as the plating solution, and the temperature of the plating solution is kept at 40 to 70 ° C. Yes.
- the first plating layer 23 a containing Co—WB is formed on the catalyst adsorption layer 22 of the substrate 2 by electroless plating. .
- the substrate 2 on which the first plating layer 23 a is formed on the catalyst adsorption layer 22 is sent from the plating layer forming unit 14 into the sealed casing 15 a of the plating layer baking unit 15 by the substrate transport arm 11. Then, in the closed casing 15a of the plating layer baking unit 15, the substrate 2 is heated on a hot plate 15A in an inert atmosphere N 2 gas is filled. In this way, the first plating layer 23a of the substrate 2 is baked (Bake process).
- the baking temperature when baking the first plating layer 23a is 150 to 200 ° C., and the baking time is 10 to 30 minutes.
- the substrate 2 heated in the plating layer baking unit 15 is sent again to the plating layer forming unit 14 by the substrate transfer arm 11. Thereafter, in the plating layer forming unit 14, the substrate 2 is subjected to electroless plating, and the second plating layer 23b is formed on the first plating layer 23a by an autocatalytic plating action.
- a plating solution containing Co—WB can be used as the plating solution, as in the case of forming the first plating layer 23a.
- the temperature of the plating solution is also kept at 40 to 70 ° C. as in the case of forming the first plating layer 23a.
- the plating solution when forming the second plating layer 23b in the plating layer forming portion 14, unlike the case of forming the first plating layer 23a, instead of the plating solution containing Co—WB, the plating solution is Co—W—.
- the plating temperature can be set to 40 to 80 ° C.
- a plating solution containing the same metal (Co—W) as the first plating layer 23a is used, and the second plating layer 23b formed in this way is also used. It functions as a Cu diffusion prevention film (barrier film).
- the substrate 2 on which the second plating layer 23 b is formed in the plating layer forming unit 14 is sent again from the plating layer forming unit 14 to the plating layer baking unit 15 by the substrate transport arm 11. Then, the substrate 2 is heated by the hot plate 15A in the hermetic casing 15a of the plating layer baking portion 15, and baking of the second plating layer 23b is performed.
- the baking temperature and baking time when baking the second plating layer 23b are substantially the same as the baking temperature and baking time when baking the first plating layer 23a.
- the baking temperature and baking time for the second plating layer 23b may be set to be different from the baking temperature and baking time for the first plating layer 23a.
- the plating layer laminate 23 composed of the first plating layer 23a and the second plating layer 23b and functioning as a Cu diffusion prevention film (barrier film) can be formed on the substrate 2.
- the metal-to-metal bond between the plating layers 23a and 23b can be increased.
- the thickness of the plating layer to be baked is large, between the base layer and the plating layer. The stress accompanying the shape change of a plating layer arises.
- the plating layer laminate 23 functioning as a barrier film includes the first plating layer 23a obtained by the first plating layer forming step and the plating layer baking step, and the second time.
- the plating layer thickness is determined by the thickness of the plating layer to be baked in the first or second baking step. It can be made smaller than the entire body 23.
- the stress generated between the plating layer 23a, 23b and the underlayer is reduced by reducing the stress generated between the plating layer 23a, 23b and the underlayer (for example, the catalyst adsorption layer 22). Can do.
- the plating layer laminate 23 is not limited to having the first plating layer 23a and the second plating layer 23b. In addition to the first plating layer 23a and the second plating layer 23b, an additional third plating layer and You may have a 4th plating layer.
- the substrate 2 on which the plating layer laminate 23 that functions as a barrier film is formed is then sent to the electroless Cu plating layer forming unit 16 by the substrate transfer arm 11.
- an electroless Cu plating layer 24 that functions as a seed film for forming the electrolytic Cu plating layer 25 is formed on the plating layer laminate 23 of the substrate 2 (FIG. 3 (e)).
- the electroless Cu plating layer forming unit 16 includes a plating apparatus as shown in FIGS. 5 and 6, and by performing electroless plating on the plating layer laminate 23 of the substrate 2, the electroless Cu plating is performed.
- a plating layer 24 can be formed.
- the electroless Cu plating layer 24 formed in the electroless Cu plating layer forming unit 16 functions as a seed film for forming the electrolytic Cu plating layer 25 and is used in the electroless Cu plating layer forming unit 16.
- the plating solution contains a copper salt as a copper ion source, for example, copper sulfate, copper nitrate, copper chloride, copper bromide, copper oxide, copper hydroxide, copper pyrophosphate and the like.
- the plating solution further contains a copper ion complexing agent and a reducing agent. Further, the plating solution may contain various additives for improving the stability and speed of the plating reaction.
- the substrate 2 on which the electroless Cu plating layer 24 is thus formed is sent to the electrolytic Cu plating layer forming unit 17 by the substrate transport arm 11.
- the substrate 2 on which the electroless Cu plating layer 24 is formed may be sent to the baking unit 15 for baking and then sent to the electrolytic Cu plating layer forming unit 17.
- the electrolytic Cu plating process is performed on the substrate 2, and the electrolytic Cu plating layer 25 is filled in the recess 2 a of the substrate 2 using the electroless Cu plating layer 24 as a seed film. (FIG. 3 (f)).
- the substrate 2 is discharged outward from the plating processing system 10, and the back surface side (the side opposite to the concave portion 2a) of the substrate 2 is subjected to chemical mechanical polishing (FIG. 3G).
- the vacuum deposition process layer 2A functions as an underlayer, and the surface of the substrate 2 can be smoothed. For this reason, the adhesion between the adhesion layer 21 formed on the vacuum deposition layer 2A and the substrate 2 is improved, whereby the plating layer laminate 23 functioning as a barrier film on the substrate 2 or the seed film functioning as a seed film. The adhesion between the electroplating layer 24 and the substrate 2 can be improved. Thus, the plating layer laminate 23 functioning as a barrier film or the electroless plating layer 24 functioning as a seed film is not peeled off from the substrate 2.
- the substrate 2 has the recess 2a.
- the vacuum deposition process layer forming unit 27 performs the vacuum deposition process
- the vacuum deposition process layer 2A may be formed over the entire inner surface of the recess 2a as shown in FIG. 2A may not reach the entire inner surface of the recess 2a, and the vacuum deposition layer 2A may be formed only on the outer surface of the substrate 2 outside the recess 2a and on the upper surface of the inner surface of the recess 2a (see FIG. 10B).
- the vacuum deposition process layer 2A may be formed only on the outer surface of the substrate 2 outside the recess 2a (not shown).
- an external force may be applied to the substrate 2, and such an external force is applied to the outer surface of the substrate 2.
- a vacuum deposition process layer 2A as a base layer is formed on the outer surface of the substrate 2 outside the recess 2a of at least the substrate 2. Therefore, even if an external force is applied to the outer surface of the substrate 2, the vacuum deposition treatment layer 2 ⁇ / b> A improves the adhesion between the adhesion layer 21, the plating layer laminate 23 and the electroless Cu plating layer 24, and the substrate 2. Thus, the adhesion layer 21, the plating layer laminate 23 and the electroless Cu plating layer 24 can be prevented from falling off or peeling off from the substrate 2.
- the plating layer laminate 23 functioning as a barrier film is obtained by the first plating layer forming step and the plating layer baking step, and the first plating layer 23a and the second time And the second plating layer 23b obtained by the plating layer forming step and the plating layer baking step. For this reason, it is possible to improve the adhesion of the underlayer while suppressing the stress with the underlayer generated during the baking of the plating layers 23a and 23b.
- the plating layer laminated body 23 which functions as a Cu diffusion prevention film showed the example which has the 1st plating layer 23a and the 2nd plating layer 23b, not only this but a sheet film
- the electroless Cu plating layer 24 that functions as a plating layer laminate 24 having a first plating layer 24a and a second plating layer 24b (FIG. 8).
- the first plating layer 24 a of the electroless Cu plating layer 24 is formed by the first plating layer forming process in the electroless Cu plating forming portion 16, and then the first time in the plating layer baking portion 15.
- the plating layer is baked by the baking step.
- the second plating layer 24b is formed by the second plating layer forming step in the electroless Cu plating forming portion 16, and then the second plating layer baking portion 15 is baked by the second plating layer baking step. It is done. In this way, the plating layer laminate 24 having the first plating layer 24 a and the second plating layer 24 b and functioning as a seed film for the electrolytic Cu plating layer 25 is obtained.
- an adhesion layer 21 and a catalyst adsorption layer 22 are provided on the vacuum deposition layer 2A formed on the substrate 2 and a plating layer laminate 23 that functions as a barrier film is provided on the catalyst adsorption layer 22 is shown.
- the plating layer laminate 23 that functions as a barrier film may be provided without providing the adhesion layer 21 and the catalyst adsorption layer 22 on the vacuum deposition layer 2A on the substrate 2.
- plating layer laminated body 23 which has the 1st plating layer 23a and the 2nd plating layer 23b which function as a barrier film below the electroless Cu plating layer 24 which functions as a seed film was shown, instead of the plating layer laminate 23, a plating layer 23 made of a single layer functioning as a barrier film may be provided.
- plating layer laminate 23 that functions as a barrier film below the electroless Cu plating layer 24 that functions as a seed film.
- the vacuum deposition layer 2A is provided on the substrate 2 having the recess 2a, and the adhesion layer 21 and the catalyst adsorption layer 22 are provided on the vacuum deposition layer 2A.
- an electroless Cu plating layer 24 as a seed film may be provided by catalytic plating.
- FIG. 11 corresponds to FIG. 3 (f). As shown in FIG. 11, an electrolytic Cu plating layer 25 is filled in the recess 2a of the substrate 2 using the electroless Cu plating layer 24 as a seed film. Yes.
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Abstract
［課題］基板との密着性を向上させることができるめっき処理方法を提供する。 ［解決手段］基板に対してめっき処理を施すめっき処理方法は、基板２に対して真空蒸着処理を施して基板２上に真空蒸着処理層２Ａを形成する工程と、基板２の真空蒸着処理層２Ａ上に密着層２１および触媒吸着層２２を順次設ける工程と、基板２の触媒吸着層２２上にバリア膜として機能する第１めっき層２３ａと、第２めっき層２３ｂとを有するめっき層積層体２３を形成する工程とを備えている。真空蒸着処理層２Ａによって基板２表面を円滑化させることができ、真空蒸着処理層２Ａは密着性を高める下地層として機能する。
Description
本発明は基板に対してめっきを施すめっき処理方法、めっき処理システムおよび記憶媒体に関する。
近年、ＬＳＩなどの半導体装置は、実装面積の省スペース化や処理速度の改善といった課題に対応するべく、より一層高密度化することが求められている。高密度化を実現する技術の一例として、複数の配線基板を積層することにより三次元ＬＳＩなどの多層基板を作製する多層配線技術が知られている。
多層配線技術においては一般に、配線基板間の導通を確保するため、配線基板を貫通するとともに銅（Ｃｕ）などの導電性材料が埋め込まれた貫通ビアホールが配線基板に設けられている。導電性材料が埋め込まれた貫通ビアホールを作製するための技術の一例として、無電解めっき法が知られている。
配線基板を作製する具体的な方法として、凹部が形成された基板を準備し、次に、基板の凹部内にＣｕ拡散防止膜としてのバリア膜を形成し、このバリア膜上にシード膜を無電解Ｃｕめっきにより、形成する方法が知られている。その後凹部内に電解ＣｕめっきによりＣｕが埋め込まれ、Ｃｕが埋め込まれた基板は、化学機械研磨などの研磨方法によって薄膜化され、これによって、Ｃｕが埋め込まれた貫通ビアホールを有する配線基板が作製される。
上述した配線基板のうちバリア膜を形成する場合、基板に対して予め触媒を吸着させて触媒吸着層を形成しておき、この触媒吸着層上にめっき処理を施すことによりＣｏ－Ｗ－Ｂ層からなるバリア膜が得られる。バリア膜はその後、焼しめられて内部の水分が除去され、かつ金属間結合が強化される。
上述のようにＣｕ拡散防止膜としてのバリア膜は、めっき処理により形成され、その後に焼きしめられて、内部の水分除去および金属間結合が強化される。
上述のように、基板は凹部を有し、Ｃｕ拡散防止膜としてのバリア膜は、基板のうち凹部内面および凹部外側の基板外面に形成される。しかしながら基板外面に形成されたバリア膜は、基板処理時に基板に対して働く外力等により剥離されてしまうことがあり、この場合は製造された多層基板に不具合が生じてしまう。
本発明は、このような点を考慮してなされたものであり、基板上にめっき処理によりバリア膜等のめっき層を形成した場合、とりわけ凹部外側の基板外面に形成されためっき層が基板から剥離することのないめっき処理方法、めっき処理システム、および記憶媒体を提供することを目的とする。
本発明は、基板に対してめっき処理を施すめっき処理方法において、基板を準備する工程と、基板に対して真空蒸着処理を施して、基板上に真空蒸着処理層を形成する工程と、基板に対してめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成する工程とを備えたことを特徴とするめっき処理方法である。
本発明は、基板に対してめっき処理を施すめっき処理システムにおいて、基板に対して真空蒸着処理を施して、基板表面に真空蒸着処理層を形成する真空蒸着処理層形成部と、基板上にめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成するめっき層形成部と、真空蒸着処理層形成部と、めっき層形成部との間で基板を搬送する基板搬送部と、真空蒸着処理層形成部、めっき層形成部および基板搬送部を制御する制御部とを備えたことを特徴とするめっき処理システムである。
本発明は、めっき処理システムにめっき処理方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、めっき処理方法は、基板を準備する工程と、基板に対して真空蒸着処理を施して、基板上に真空蒸着処理層を形成する工程と、基板に対してめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成する工程とを備えたことを特徴とする記憶媒体である。
本発明によれば、基板に対して真空蒸着処理を施して基板上に真空蒸着処理層を形成し、基板に対してめっき処理を施して、この真空蒸着処理層上にめっき層を形成したので、真空蒸着処理層が基板上に下地層として形成され、この下地層としての真空蒸着処理層によって基板の表面が平滑化される。このため下地層としての真空蒸着処理層によって、めっき層を密着性良く基板上に形成することができ、基板処理時に基板に対して働く外力等によりめっき層が脱落したり剥離されことを防止することができる。
めっき処理システム
図１乃至図８により本発明の一実施の形態について説明する。
図１乃至図８により本発明の一実施の形態について説明する。
まず図１により本発明によるめっき処理システムについて述べる。
図１に示すように、めっき処理システム１０は半導体ウエハ等の凹部２ａを有する基板（シリコン基板）２に対してめっき処理を施すものである（図３（ａ）～（ｇ）参照）。
このようなめっき処理システム１０は、基板２を収納したカセット（図示せず）が載置されるカセットステーション１８と、カセットステーション１８上のカセットから基板２を取り出して搬送する基板搬送アーム１１と、基板搬送アーム１１が走行する走行路１１ａとを備えている。
また走行路１１の一側に、基板２に対して真空蒸着処理を施して、基板２表面に真空蒸着処理層２Ａを形成する真空蒸着処理層形成部２７と、基板２の真空蒸着処理層２Ａ上にシランカップリング剤等のカップリング剤を吸着させて後述する密着層２１を形成する密着層形成部１２と、基板２の密着層２１上に触媒を吸着させて後述する触媒吸着層２２を形成する触媒吸着層形成部１３と、基板２の触媒吸着層２２上に後述するＣｕ拡散防止膜（バリア膜）として機能するめっき層２３ａ、２３ｂを形成するめっき層形成部１４とが配置されている。
また走行路１１の他側に、基板２に形成されためっき層２３ａ、２３ｂを焼きしめるめっき層焼きしめ部１５と、基板２に形成されためっき層２３ａ、２３ｂ上に、後述するシード膜として機能する無電解銅めっき層（無電解Ｃｕめっき層）２４を形成するための無電解Ｃｕめっき層形成部１６が配置されている。
まためっき層焼きしめ部１５に隣接して、基板２に形成された凹部２ａ内に、無電解Ｃｕめっき層２４をシード膜として電解銅めっき層（電解Ｃｕめっき層）２５を充てんするための電解Ｃｕめっき層形成部１７が配置されている。
なお、めっき層形成部１４において第１めっき層２３ａが形成された後、この第１めっき層２３ａがめっき層焼きしめ部１５において焼きしめられる。さらにめっき層形成部１４において、焼きしめられた第１めっき層２３ａ上に第２めっき層２３ｂが重ねて形成され、この第２めっき層２３ｂはめっき層焼きしめ部１５において焼きしめられる。
このようにして、基板２の触媒吸着層２２上に、第１めっき層２３ａと第２めっき層２３ｂとからなるめっき層積層体２３が形成される。
このような構成からなるめっき層積層体２３の第１めっき層２３ａおよび第２めっき層２３ｂは、いずれもＣｕ拡散防止膜（バリア膜）として機能する。
また上述しためっき処理システムの各構成部材、例えばカセットステーション１８、基板搬送アーム１１、真空蒸着処理層形成部２７、密着層形成部１２、触媒吸着層形成部１３、めっき層形成部１４、めっき層焼きしめ部１５、無電解Ｃｕめっき層形成部１６および電解Ｃｕめっき層形成部１７は、いずれも制御部１９に設けた記憶媒体１９Ａに記録された各種のプログラムに従って制御部１９で駆動制御され、これによって基板２に対する様々な処理が行われる。ここで、記憶媒体１９Ａは、各種の設定データや後述するめっき処理プログラム等の各種のプログラムを格納している。記憶媒体１９Ａとしては、コンピューターで読み取り可能なＲＯＭやＲＡＭなどのメモリーや、ハードディスク、ＣＤ－ＲＯＭ、ＤＶＤ－ＲＯＭやフレキシブルディスクなどのディスク状記憶媒体などの公知のものが使用され得る。
次に真空蒸着処理層形成部２７、Ｃｕ拡散防止膜（バリア膜）として機能する第１めっき層２３ａおよび第２めっき層２３ｂを形成するためのめっき層形成部１４、めっき層焼きしめ部１５および無電解Ｃｕめっき層形成部１６について更に述べる。
（真空蒸着処理層形成部２７）
このうち真空蒸着処理層形成部２７は図８に示すように、密閉された密閉ケーシング２７ａと、密閉ケーシング２７ａ内部に設けられ基板２を保持する基板ホルダ２７ｄと、基板ホルダ２７ｄに保持された基板２表面に対して蒸着される金属が貯えられている蒸発源２７Ａとを備えている。また密閉ケーシング２７ａには密閉ケーシング２７ａ内を真空引きする真空排気口２７ｂが設けられ、真空排気口２７ｂには図示しない真空ポンプが接続され、このため密閉ケーシング２７ａは真空室として機能する。
このうち真空蒸着処理層形成部２７は図８に示すように、密閉された密閉ケーシング２７ａと、密閉ケーシング２７ａ内部に設けられ基板２を保持する基板ホルダ２７ｄと、基板ホルダ２７ｄに保持された基板２表面に対して蒸着される金属が貯えられている蒸発源２７Ａとを備えている。また密閉ケーシング２７ａには密閉ケーシング２７ａ内を真空引きする真空排気口２７ｂが設けられ、真空排気口２７ｂには図示しない真空ポンプが接続され、このため密閉ケーシング２７ａは真空室として機能する。
また密閉ケーシング２７ａ内には、基板ホルダ２７ｄに保持された基板２と、蒸発源２７Ａとの間に配置されたシャッター２７ｃが設けられ、さらに基板ホルダ２７ｄ上方には基板ホルダ２７ｄを覆ってヒータ２７ｅが設けられている。
図８に示す真空蒸着処理層形成部２７において、基板２に対してＰＶＤ処理が施され、基板２上にＰＶＤ処理により真空蒸着処理層２Ａが形成される。
この場合、ＰＶＤ処理により基板２上に形成される真空蒸着処理層２Ａとしては、ＰｄまたはＲｕが蒸着されて形成された真空蒸着処理層、ＰｄＮまたはＲｕＮが蒸着されて形成された真空蒸着処理層、ＴｉまたはＴａが蒸着されて形成された真空蒸着処理層、ＴｉＮまたはＴａＮが蒸着されて形成された真空蒸着処理層、Ｒｕが蒸着されて形成された真空蒸着処理層が考えられる。
その他、真空蒸着処理層２Ａとしては、ＰｄとＰｄＮとの積層体、ＲｕとＲｕＮとの積層体、ＴｉとＴｉＮとの積層体、ＴａとＴａＮとの積層体のような処理層が考えられる。
また真空蒸着処理層形成部２７として、ＰＶＤ処理の代わりにＣＶＤ処理により基板２上に真空蒸着処理層２Ａを形成するＣＶＤ処理装置を用いることもできる。
ＣＶＤ処理装置を用いて基板２上に形成される真空蒸着処理層２Ａとしては、Ｒｕが蒸着されて形成された処理層が考えられる。
なお、真空蒸着処理層２Ａとしては、上記のような金属に限られることはなく真空蒸着処理層２Ａ上の各層との密着性を有し、かつ、無電解の反応が可能な金属であればよい。
このように真空蒸着処理層形成部２７において、基板２上に真空蒸着処理層２Ａを形成することにより、真空蒸着処理層２Ａが下地層として機能し、基板２表面を平滑化することができる。このため後述する真空蒸着処理層２Ａ上の各層、例えば密着層２１と基板２との密着性を高めることができる。
（めっき層形成部１４および無電解Ｃｕめっき層形成部１６）
次にめっき層形成部１４および無電解Ｃｕめっき層形成部１６について述べる。
次にめっき層形成部１４および無電解Ｃｕめっき層形成部１６について述べる。
めっき層形成部１４、および無電解Ｃｕめっき層形成部１６は、いずれも図５および図６に示すめっき処理装置１４、１６から構成することができる。
このようなめっき処理装置１４および１６は、図５および図６に示すとおりのものである。
すなわち、めっき処理装置１４、１６は、図５および図６に示すように、ケーシング１０１の内部で基板２を回転保持するための基板回転保持機構（基板収容部）１１０と、基板２の表面にめっき液や洗浄液などを供給する液供給機構３０，９０と、基板２から飛散しためっき液や洗浄液などを受けるカップ１０５と、カップ１０５で受けためっき液や洗浄液を排出する排出口１２４，１２９，１３４と、排出口に集められた液を排出する液排出機構１２０，１２５，１３０と、基板回転保持機構１１０、液供給機構３０，９０，カップ１０５、および液排出機構１２０，１２５，１３０を制御する制御機構１６０と、を備えている。
（基板回転保持機構）
このうち基板回転保持機構１１０は、図５および図６に示すように、ケーシング１０１内で上下に伸延する中空円筒状の回転軸１１１と、回転軸１１１の上端部に取り付けられたターンテーブル１１２と、ターンテーブル１１２の上面外周部に設けられ、基板２を支持するウエハチャック１１３と、回転軸１１１を回転駆動する回転機構１６２と、を有している。このうち回転機構１６２は、制御機構１６０により制御され、回転機構１６２によって回転軸１１１が回転駆動され、これによって、ウエハチャック１１３により支持されている基板２が回転される。
このうち基板回転保持機構１１０は、図５および図６に示すように、ケーシング１０１内で上下に伸延する中空円筒状の回転軸１１１と、回転軸１１１の上端部に取り付けられたターンテーブル１１２と、ターンテーブル１１２の上面外周部に設けられ、基板２を支持するウエハチャック１１３と、回転軸１１１を回転駆動する回転機構１６２と、を有している。このうち回転機構１６２は、制御機構１６０により制御され、回転機構１６２によって回転軸１１１が回転駆動され、これによって、ウエハチャック１１３により支持されている基板２が回転される。
（液供給機構）
次に、基板２の表面にめっき液や洗浄液などを供給する液供給機構３０，９０について、図５および図６を参照して説明する。液供給機構３０，９０は、基板２の表面に対してめっき処理を施すめっき液を供給するめっき液供給機構３０と、基板２の表面に洗浄処理液を供給する洗浄処理液供給機構９０と、を含んでいる。
次に、基板２の表面にめっき液や洗浄液などを供給する液供給機構３０，９０について、図５および図６を参照して説明する。液供給機構３０，９０は、基板２の表面に対してめっき処理を施すめっき液を供給するめっき液供給機構３０と、基板２の表面に洗浄処理液を供給する洗浄処理液供給機構９０と、を含んでいる。
図５および図６に示すように、吐出ノズル３２は、ノズルヘッド１０４に取り付けられている。またノズルヘッド１０４は、アーム１０３の先端部に取り付けられており、このアーム１０３は、上下方向に延伸可能となっており、かつ、回転機構１６５により回転駆動される支持軸１０２に固定されている。めっき液供給機構３０のめっき液供給管３３はアーム１０３の内側に配置されている。このような構成により、めっき液を、吐出ノズル３２を介して基板２の表面の任意の箇所に所望の高さから吐出することが可能となっている。
〔洗浄処理液供給機構９０〕
洗浄処理液供給機構９０は、後述するように基板２の洗浄工程において用いられるものであり、図５に示すように、ノズルヘッド１０４に取り付けられたノズル９２を含んでいる。この場合、ノズル９２から、洗浄処理液またはリンス処理液のいずれかが選択的に基板２の表面に吐出される。
洗浄処理液供給機構９０は、後述するように基板２の洗浄工程において用いられるものであり、図５に示すように、ノズルヘッド１０４に取り付けられたノズル９２を含んでいる。この場合、ノズル９２から、洗浄処理液またはリンス処理液のいずれかが選択的に基板２の表面に吐出される。
（液排出機構）
次に、基板２から飛散しためっき液や洗浄液などを排出する液排出機構１２０，１２５，１３０について、図５を参照して説明する。図５に示すように、ケーシング１０１内には、昇降機構１６４により上下方向に駆動され、排出口１２４，１２９，１３４を有するカップ１０５が配置されている。液排出機構１２０，１２５，１３０は、それぞれ排出口１２４，１２９，１３４に集められる液を排出するものとなっている。
次に、基板２から飛散しためっき液や洗浄液などを排出する液排出機構１２０，１２５，１３０について、図５を参照して説明する。図５に示すように、ケーシング１０１内には、昇降機構１６４により上下方向に駆動され、排出口１２４，１２９，１３４を有するカップ１０５が配置されている。液排出機構１２０，１２５，１３０は、それぞれ排出口１２４，１２９，１３４に集められる液を排出するものとなっている。
図５に示すように、めっき液排出機構１２０，１２５は、流路切換器１２１，１２６により切り替えられる回収流路１２２，１２７および廃棄流路１２３，１２８をそれぞれ有している。このうち回収流路１２２，１２７は、めっき液を回収して再利用するための流路であり、一方、廃棄流路１２３，１２８は、めっき液を廃棄するための流路である。なお図２に示すように、処理液排出機構１３０には廃棄流路１３３のみが設けられている。
また図５および図６に示すように、基板収容部１１０の出口側には、めっき液３５を排出するめっき液排出機構１２０の回収流路１２２が接続され、この回収流路１２２のうち基板収容部１１０の出口側近傍に、めっき液３５を冷却する冷却バッファ１２０Ａが設けられている。
（めっき層焼きしめ部１５）
次にめっき層焼きしめ部１５について述べる。
次にめっき層焼きしめ部１５について述べる。
めっき層焼きしめ部１５は、図７に示すように、密閉された密閉ケーシング１５ａと、密閉ケーシング１５ａ内部に配置されたホットプレート１５Ａとを備えている。
めっき層焼きしめ部１５の密閉ケーシング１５ａには、基板２を搬送するための搬送口（図示せず）が設けられ、また密閉ケーシング１５ａ内にはＮ２ガス供給口１５ｃからＮ２ガスが供給される。
同時に密閉ケーシング１５ａ内は排気口１５ｂにより排気され、密閉ケーシング１５ａ内をＮ２ガスで充満させることにより、密閉ケーシング１５ａ内を不活性雰囲気に保つことができる。
次にこのような構成からなる本実施の形態の作用について、図２および図３により説明する。
まず前工程において、半導体ウエハ等からなる基板（シリコン基板）２に対して凹部２ａが形成され、凹部２ａが形成された基板２が本発明によるめっき処理システム１０内に搬送される。
ここで基板２に凹部２ａを形成する方法としては、従来公知の方法から適宜採用することができる。具体的には、例えば、ドライエッチング技術として、弗素系又は塩素系ガス等を用いた汎用的技術を適用できるが、特にアスペクト比（孔の深さ／孔の径）の大きな孔を形成するには、高速な深掘エッチングが可能なＩＣＰ－ＲＩＥ（Inductively Coupled Plasma Reactive Ion Etching：誘導結合プラズマ－反応性イオンエッチング）の技術の採用した方法をより好適に採用でき、特に、六フッ化硫黄（ＳＦ6）を用いたエッチングステップとＣ4Ｆ8などのテフロン系ガスを用いた保護ステップとを繰り返しながら行うボッシュプロセスと称される方法を好適に採用できる。
次に、めっき処理システム１０の真空蒸着処理層形成部２７において、凹部２ａを有する基板２上に真空蒸着処理層２Ａが形成される（図２および図３（ａ））。
上述のように、真空蒸着処理層形成部２７においては、基板２に対してＰＶＤ処理が施され、このＰＶＤ処理により基板２上に真空蒸着処理層２Ａが形成される。
しかしながら基板２に対してＣＶＤ処理を施すことにより、基板２上に真空蒸着処理層２Ａを形成してもよい。
このように基板２上に真空蒸着処理層２Ａを形成することにより、真空蒸着処理層２Ａが下地層として機能し、基板２表面を平滑化させて、その後基板２上に形成される各層と基板２との密着性を向上させることができる。
次に基板２は基板搬送アーム１１によって密着層形成部１２へ送られる。
その後、密着層形成部１２内において、凹部２ａを有する基板２の真空蒸着処理層２Ａ上に密着層２１が形成される（図２および図３（ｂ））。
密着層形成部１２は加熱部を有する真空室（図示せず）を有し、この密着層形成部１２内において、凹部２ａを有する基板２の真空蒸着処理層２Ａ上にシランカップリング剤等のカップリング剤が吸着され、このようにして基板２上に密着層２１が形成される（ＳＡＭ処理）。シランカップリング剤を吸着させて形成された密着層２１は、後述する触媒吸着層２２と基板２との密着性を向上させるものである。
密着層形成部１２において密着層２１が形成された基板２は、基板搬送アーム１１によって触媒吸着層形成部１３へ送られる。そしてこの触媒吸着層形成部１３において、基板２の密着層２１上に、例えば触媒となるｐｄイオンが吸着されて触媒吸着層２２が形成される（図３（ｃ））。
触媒吸着処理としては、例えば、基板２に対して塩化パラジウム水溶液をノズルにより吹付け、触媒となるＰｄイオンを基板２の表面に吸着させる処理を採用することができる。具体的には、基板２に対して塩化スズ溶液を吹付け、スズイオンを基板２表面に吸着し、次に、基板２に塩化パラジウム水溶液を吹付けてスズイオンをＰｄイオンと置換してＰｄイオンを吸着させ、さらに、基板２に水酸化ナトリウムを吹付けて余分なスズイオンを取り除く。
このように、触媒吸着形成部１３において基板２上に触媒吸着層２２を形成した後、基板２は基板搬送アーム１１によってめっき層形成部１４へ送られる。
次にめっき層形成部１４において、基板２の触媒吸着層２２上に、Ｃｕ拡散防止膜（バリア膜）として機能する第１めっき層２３ａが形成される（図３（ｄ）の２３および図４）。
この場合、めっき層形成部１４は、図５および図６に示すようなめっき処理装置からなり、基板２の触媒吸着層２２上に無電解めっき処理を施すことにより第１めっき層２３ａを形成することができる。
めっき層形成部１４において第１めっき層２３ａを形成する場合、めっき液としては、例えばＣｏ－Ｗ－Ｂを含むめっき液を用いることができ、めっき液の温度は４０～７０℃に保たれている。
Ｃｏ－Ｗ－Ｂを含むめっき液を基板２上に供給することにより、基板２の触媒吸着層２２上に無電解めっき処理により、Ｃｏ－Ｗ－Ｂを含む第１めっき層２３ａが形成される。
次に触媒吸着層２２上に第１めっき層２３ａが形成された基板２は、基板搬送アーム１１により、めっき層形成部１４からめっき層焼きしめ部１５の密閉ケーシング１５ａ内へ送られる。そして、このめっき層焼きしめ部１５の密閉ケーシング１５ａ内において、基板２は、Ｎ２ガスが充てんされた不活性雰囲気中でホットプレート１５Ａ上で加熱される。このようにして基板２の第１めっき層２３ａが焼きしめられる（Ｂａｋｅ処理）。
めっき層焼きしめ部１５において、第１めっき層２３ａを焼きしめる際の焼きしめ温度は、１５０～２００℃、焼きしめ時間は１０～３０分となっている。
このように基板２上の第１めっき層２３ａを焼きしめることにより、第１めっき層２３ａ内の水分を外方へ放出することができ、同時に第１めっき層２３ａ内の金属間結合を高めることができる。
次にめっき層焼きしめ部１５において加熱された基板２は、基板搬送アーム１１により再びめっき層形成部１４へ送られる。その後めっき層形成部１４において、基板２に対して無電解めっき処理が施され、第１めっき層２３ａ上に自己触媒めっき作用により第２めっき層２３ｂが形成される。
基板２の第１めっき層２３ａ上に第２めっき層２３ｂを形成する場合、第１めっき層２３ａを形成する場合と同様、めっき液としてＣｏ－Ｗ－Ｂを含むめっき液を用いることができ、めっき液の温度も第１めっき層２３ａを形成する場合と同様、４０～７０℃に保たれている。
なお、めっき層形成部１４において第２めっき層２３ｂを形成する際、第１めっき層２３ａを形成する場合と異なり、Ｃｏ－Ｗ－Ｂを含むめっき液の代わりに、めっき液としてＣｏ－Ｗ－Ｐを含むめっき液を用い、めっき温度を４０～８０℃に設定することもできる。
いずれにしても、第２めっき層２３ｂを形成する場合、第１めっき層２３ａと同様の金属（Ｃｏ－Ｗ）を含むめっき液が用いられ、このようにして形成された第２めっき層２３ｂもＣｕ拡散防止膜（バリア膜）として機能する。
次にめっき層形成部１４において第２めっき層２３ｂが形成された基板２は、基板搬送アーム１１によってめっき層形成部１４からめっき層焼きしめ部１５へ再び送られる。そしてめっき層焼きしめ部１５の密閉ケーシング１５ａ内で、基板２はホットプレート１５Ａにより加熱され、第２めっき層２３ｂの焼きしめが行なわれる。
第２めっき層２３ｂを焼きしめる場合の焼きしめ温度および焼きしめ時間は、第１めっき層２３ａの焼きしめる場合の焼きしめ温度および焼きしめ時間と略同一となっている。
しかしながら、第２めっき層２３ｂに対する焼きしめ温度および焼きしめ時間を第１めっき層２３ａに対する焼きしめ温度および焼きしめ時間と異なるように設定してもよい。
しかしながら、第２めっき層２３ｂに対する焼きしめ温度および焼きしめ時間を第１めっき層２３ａに対する焼きしめ温度および焼きしめ時間と異なるように設定してもよい。
基板２上の第２めっき層２３ｂを焼きしめることにより、第２めっき層２３ｂ内の水分を外方へ放出することができ、同時に第２めっき層２３ｂ内の金属間結合を高めることができる。
このようにして、基板２上に第１めっき層２３ａと第２めっき層２３ｂからなり、Ｃｕ拡散防止膜（バリア膜）として機能するめっき層積層体２３を形成することができる。
一般にめっき層２３ａ、２３ｂを焼きしめることにより、めっき層２３ａ、２３ｂ間の金属間結合を高めることができるが、焼きしめられるめっき層の層厚が大きい場合、下地層とめっき層との間でめっき層の形状変化に伴なう応力が生じる。
本実施の形態によれば、バリア膜として機能するめっき層積層体２３は、第１回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第１めっき層２３ａと、第２回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第２めっき層２３ｂとからなるため、第１回目あるいは第２回目の焼きしめ工程において焼きしめられるめっき層の厚みをめっき層積層体２３全体に比べて小さくすることができる。
このため各々のめっき層２３ａ、２３ｂの焼きしめ時に下地層（例えば触媒吸着層２２）との間に生じる応力を小さくして、めっき層２３ａ、２３ｂと下地層との間の密着性を高めることができる。
なお、めっき層積層体２３は、第１めっき層２３ａと第２めっき層２３ｂとを有する場合に限らず、第１めっき層２３ａおよび第２めっき層２３ｂに加えて更に追加の第３めっき層および第４めっき層を有していてもよい。
このようにしてバリア膜として機能するめっき層積層体２３が形成された基板２は、その後基板搬送アーム１１により無電解Ｃｕめっき層形成部１６に送られる。
次に無電解Ｃｕめっき層形成部１６において、基板２のめっき層積層体２３上に、電解Ｃｕめっき層２５を形成するためのシード膜として機能する無電解Ｃｕめっき層２４が形成される（図３（ｅ））。
この場合、無電解Ｃｕめっき層形成部１６は、図５および図６に示すようなめっき処理装置からなり、基板２のめっき層積層体２３上に無電解めっき処理を施すことにより、無電解Ｃｕめっき層２４を形成することができる。
無電解Ｃｕめっき層形成部１６において形成された無電解Ｃｕめっき層２４は、電解Ｃｕめっき層２５を形成するためのシード膜として機能するものであり、無電解Ｃｕめっき層形成部１６において用いられるめっき液には、銅イオン源となる銅塩、例えば硫酸銅、硝酸銅、塩化銅、臭化銅、酸化銅、水酸化銅、ピロリン酸銅などが含まれている。まためっき液には、銅イオンの錯化剤および還元剤がさらに含まれている。まためっき液には、めっき反応の安定性や速度を向上させるための様々な添加剤が含まれていてもよい。
このようにして無電解Ｃｕめっき層２４が形成された基板２は、基板搬送アーム１１により、電解Ｃｕめっき層形成部１７へ送られる。なお、無電解Ｃｕめっき層２４が形成された基板２を焼きしめ部１５に送って焼きしめた後、電解Ｃｕめっき層形成部１７へ送ってもよい。次に電解Ｃｕめっき層形成部１７において、基板２に対して電解Ｃｕめっき処理が施され、基板２の凹部２ａ内に無電解Ｃｕめっき層２４をシード膜として電解Ｃｕめっき層２５が充てんされる（図３（ｆ））。
その後基板２は、めっき処理システム１０から外方へ排出され、基板２の裏面側（凹部２ａと反対側）が化学機械研磨される（図３（ｇ））。
以上のように本実施の形態によれば、基板２上に真空蒸着処理層２Ａを形成することにより、真空蒸着処理層２Ａが下地層として機能し、基板２表面を平滑化させることができる。このため真空蒸着処理層２Ａ上に形成された密着層２１と基板２との密着性を向上させ、このことにより基板２上にバリア膜として機能するめっき層積層体２３あるいはシード膜として機能する無電解めっき層２４と、基板２との密着性を高めることができる。このことにより、バリア膜として機能するめっき層積層体２３あるいはシード膜として機能する無電解めっき層２４が基板２から剥れることはない。
ところで、上述のように基板２は凹部２ａを有している。真空蒸着処理層形成部２７において、真空蒸着処理を施した場合、図１０（ａ）に示すように、真空蒸着処理層２Ａが凹部２ａ内面全域に形成されることもあるが、真空蒸着処理層２Ａが凹部２ａ内面全域まで届かず、真空蒸着処理層２Ａが凹部２ａ外側の基板２外面および凹部２ａ内面の上部のみに形成されることがある（図１０（ｂ）参照）。あるいは、真空蒸着処理層２Ａが凹部２ａ外側の基板２外面のみに形成されることもある（図示せず）。
基板２の搬送中、基板２に対して外力が加わることがあり、このような外力は基板２の外側表面に加わることになる。図１０（ｂ）において、少なくとも基板２のうち凹部２ａ外側の基板２外面に、下地層としての真空蒸着処理層２Ａが形成されている。このため、基板２の外側の外面に外力が加わったとしても、真空蒸着処理層２Ａが、密着層２１、めっき層積層体２３および無電解Ｃｕめっき層２４と、基板２との密着性を向上させて、これら密着層２１、めっき層積層体２３および無電解Ｃｕめっき層２４が基板２から脱落したり剥離することを防止することができる。
また本実施の形態によれば、バリア膜として機能するめっき層積層体２３を、第１回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られ第１めっき層２３ａと、第２回目のめっき層の形成工程およびめっき層の焼きしめ工程により得られた第２めっき層２３ｂとから構成した。このため各々のめっき層２３ａ、２３ｂの焼きしめ時に生じる下地層との応力を小さく抑えて、下地層の密着性を向上させることができる。
変形例
次に本発明の変形例について述べる。上記実施の形態において、Ｃｕ拡散防止膜（バリア膜）として機能するめっき層積層体２３が、第１めっき層２３ａと第２めっき層２３ｂとを有する例を示したが、これに限らずシート膜として機能する無電解Ｃｕめっき層２４を第１めっき層２４ａと第２めっき層２４ｂとを有するめっき層積層体２４から構成してもよい（図８）。
次に本発明の変形例について述べる。上記実施の形態において、Ｃｕ拡散防止膜（バリア膜）として機能するめっき層積層体２３が、第１めっき層２３ａと第２めっき層２３ｂとを有する例を示したが、これに限らずシート膜として機能する無電解Ｃｕめっき層２４を第１めっき層２４ａと第２めっき層２４ｂとを有するめっき層積層体２４から構成してもよい（図８）。
この場合、無電解Ｃｕめっき層２４の第１めっき層２４ａは、無電解Ｃｕめっき形成部１６において第１回目のめっき層の形成工程により形成された後、めっき層焼きしめ部１５において第１回目のめっき層の焼きしめ工程により焼きしめられる。また第２めっき層２４ｂは無電解Ｃｕめっき形成部１６において第２回目のめっき層の形成工程により形成された後、めっき層焼きしめ部１５において第２回目のめっき層の焼きしめ工程により焼きしめられる。このようにして第１めっき層２４ａと第２めっき層２４ｂとを有し、電解Ｃｕめっき層２５のシード膜として機能するめっき層積層体２４が得られる。
また基板２上に形成された真空蒸着処理層２Ａ上に密着層２１と触媒吸着層２２を設け、この触媒吸着層２２上にバリア膜として機能するめっき層積層体２３を設けた例を示したが、基板２上の真空蒸着処理層２Ａ上に密着層２１と触媒吸着層２２を設けることなく、バリア膜として機能するめっき層積層体２３を設けてもよい。
またシード膜として機能する無電解Ｃｕめっき層２４の下方に、バリア膜として機能する第１めっき層２３ａと第２めっき層２３ｂとを有するめっき層積層体２３を設けた例を示したが、このめっき層積層体２３の代わりにバリア膜として機能する単一層からなるめっき層２３を設けてもよい。
またシード膜として機能する無電解Ｃｕめっき層２４の下方に、必ずしもバリア膜として機能するめっき層積層体２３を設ける必要はない。
すなわち、図１１に示すように、凹部２ａを有する基板２上に真空蒸着処理層２Ａを設けるとともに、真空蒸着処理層２Ａ上に密着層２１および触媒吸着層２２を設け、触媒吸着層２２上にバリア膜を設けることなく、触媒めっき作用によりシード膜としての無電解Ｃｕめっき層２４を設けてもよい。
ここで図１１は図３（ｆ）に対応する図であり、図１１に示すように、基板２の凹部２ａ内に無電解Ｃｕめっき層２４をシード膜として電解Ｃｕめっき層２５が充てんされている。
２ 基板
２Ａ 真空蒸着処理層
２ａ 凹部
１０ めっき処理システム
１１ 基板搬送アーム
１２ 密着層形成部
１３ 触媒吸着層形成部
１４ めっき層形成部
１５ めっき層焼きしめ部
１５Ａ ホットプレート
１５ａ 密閉ケーシング
１５ｂ 排気口
１５ｃ Ｎ２ガス供給口
１６ 無電解Ｃｕめっき層形成部
１７ 電解Ｃｕめっき層形成部
１８ カセットステーション
１９ 制御部
１９Ａ 記憶媒体
２１ 密着層
２２ 触媒吸着層
２３ めっき層積層体
２３ａ 第１めっき層
２３ｂ 第２めっき層
２４ 無電解Ｃｕめっき層
２５ 電解Ｃｕめっき層
２７ 真空蒸着処理層形成部
２Ａ 真空蒸着処理層
２ａ 凹部
１０ めっき処理システム
１１ 基板搬送アーム
１２ 密着層形成部
１３ 触媒吸着層形成部
１４ めっき層形成部
１５ めっき層焼きしめ部
１５Ａ ホットプレート
１５ａ 密閉ケーシング
１５ｂ 排気口
１５ｃ Ｎ２ガス供給口
１６ 無電解Ｃｕめっき層形成部
１７ 電解Ｃｕめっき層形成部
１８ カセットステーション
１９ 制御部
１９Ａ 記憶媒体
２１ 密着層
２２ 触媒吸着層
２３ めっき層積層体
２３ａ 第１めっき層
２３ｂ 第２めっき層
２４ 無電解Ｃｕめっき層
２５ 電解Ｃｕめっき層
２７ 真空蒸着処理層形成部
Claims (12)
- 基板に対してめっき処理を施すめっき処理方法において、
基板を準備する工程と、
基板に対して真空蒸着処理を施して、基板上に真空蒸着処理層を形成する工程と、
基板に対してめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成する工程とを備えたことを特徴とするめっき処理方法。 - めっき層は、Ｃｕ拡散防止膜としての機能を有することを特徴とする請求項１記載のめっき処理方法。
- めっき層は、電解Ｃｕめっき層形成用のシード膜としての機能を有することを特徴とする請求項１記載のめっき処理方法。
- めっき層を形成する前に、基板上に触媒を吸着させて触媒吸着層を形成することを特徴とする請求項２記載のめっき処理方法。
- 触媒吸着層を形成する前に、基板の真空蒸着処理層上にカップリング剤を吸着させて密着層を形成することを特徴とする請求項４記載のめっき処理方法。
- 真空蒸着処理層はＰＶＤ処理層からなることを特徴とする請求項１記載のめっき処理方法。
- 真空蒸着処理層はＣＶＤ処理層からなることを特徴とする請求項１記載のめっき処理方法。
- 基板は凹部を有し、真空蒸着処理層は少なくとも凹部外側の基板外面に形成されることを特徴とする請求項１記載のめっき処理方法。
- 基板に対してめっき処理を施すめっき処理システムにおいて、
基板に対して真空蒸着処理を施して、基板表面に真空蒸着処理層を形成する真空蒸着処理層形成部と、
基板上にめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成するめっき層形成部と、
真空蒸着処理層形成部と、めっき層形成部との間で基板を搬送する基板搬送部と、
真空蒸着処理層形成部、めっき層形成部および基板搬送部を制御する制御部とを備えたことを特徴とするめっき処理システム。 - めっき層を形成する前に基板上に触媒を吸着させて触媒吸着層を形成する触媒吸着層形成部を設けたことを特徴とする請求項９記載のめっき処理システム。
- 触媒吸着層を形成する前に基板上にカップリング剤を吸着させて密着層を形成する密着層形成部を設けたことを特徴とする請求項１０記載のめっき処理システム。
- めっき処理システムにめっき処理方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
めっき処理方法は、
基板を準備する工程と、
基板に対して真空蒸着処理を施して、基板上に真空蒸着処理層を形成する工程と、
基板に対してめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成する工程とを備えたことを特徴とする記憶媒体。
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| JP6328576B2 (ja) * | 2015-02-23 | 2018-05-23 | 東京エレクトロン株式会社 | 半導体装置、めっき処理方法、めっき処理システムおよび記憶媒体 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63318750A (ja) * | 1987-06-22 | 1988-12-27 | Nec Corp | 半導体装置の製造方法 |
| JPH11256318A (ja) * | 1998-03-10 | 1999-09-21 | Sony Corp | 導電性薄膜及びその形成方法、並びに、半導体装置及びその製造方法 |
| JP2003129285A (ja) * | 2001-10-25 | 2003-05-08 | Seiko Epson Corp | 銅めっき方法およびめっき製品 |
| JP2003178999A (ja) * | 2001-10-05 | 2003-06-27 | Handotai Rikougaku Kenkyu Center:Kk | 無電解メッキ方法、埋め込み配線の形成方法、及び埋め込み配線 |
| JP2006016684A (ja) * | 2004-07-05 | 2006-01-19 | Ebara Corp | 配線形成方法及び配線形成装置 |
| JP2009108386A (ja) * | 2007-10-31 | 2009-05-21 | Sumitomo Metal Mining Co Ltd | 電気回路用アルミニウムベース放熱基板の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527561A (en) * | 1991-05-28 | 1996-06-18 | Electrotech Limited | Method for filing substrate recesses using elevated temperature and pressure |
| US5529953A (en) * | 1994-10-14 | 1996-06-25 | Toshiba America Electronic Components, Inc. | Method of forming studs and interconnects in a multi-layered semiconductor device |
| US6016012A (en) * | 1996-11-05 | 2000-01-18 | Cypress Semiconductor Corporation | Thin liner layer providing reduced via resistance |
| JP3726500B2 (ja) * | 1997-07-28 | 2005-12-14 | 株式会社日立製作所 | 配線板及びその製造方法並びに無電解めっき方法 |
| TWI236092B (en) * | 2001-10-05 | 2005-07-11 | Semiconductor Tech Acad Res Ct | Electroless plating process, and embedded wire and forming process thereof |
| JP3866978B2 (ja) * | 2002-01-08 | 2007-01-10 | 富士通株式会社 | 半導体装置の製造方法 |
| US6824666B2 (en) * | 2002-01-28 | 2004-11-30 | Applied Materials, Inc. | Electroless deposition method over sub-micron apertures |
| JP4208668B2 (ja) * | 2003-08-22 | 2009-01-14 | 富士通株式会社 | 半導体装置およびその製造方法 |
| JP3819381B2 (ja) * | 2003-07-07 | 2006-09-06 | 株式会社半導体理工学研究センター | 多層配線構造の製造方法 |
| US8193087B2 (en) * | 2006-05-18 | 2012-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for improving copper line cap formation |
| KR100757418B1 (ko) * | 2006-09-05 | 2007-09-10 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
| JP5486821B2 (ja) * | 2009-02-12 | 2014-05-07 | 学校法人 関西大学 | 無電解銅めっき方法、及び埋め込み配線の形成方法 |
| EP2645830B1 (en) * | 2012-03-29 | 2014-10-08 | Atotech Deutschland GmbH | Method for manufacture of fine line circuitry |
-
2012
- 2012-03-27 JP JP2012072328A patent/JP6054049B2/ja active Active
-
2013
- 2013-02-22 WO PCT/JP2013/054505 patent/WO2013145979A1/ja active Application Filing
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- 2013-02-22 US US14/384,861 patent/US9837308B2/en active Active
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63318750A (ja) * | 1987-06-22 | 1988-12-27 | Nec Corp | 半導体装置の製造方法 |
| JPH11256318A (ja) * | 1998-03-10 | 1999-09-21 | Sony Corp | 導電性薄膜及びその形成方法、並びに、半導体装置及びその製造方法 |
| JP2003178999A (ja) * | 2001-10-05 | 2003-06-27 | Handotai Rikougaku Kenkyu Center:Kk | 無電解メッキ方法、埋め込み配線の形成方法、及び埋め込み配線 |
| JP2003129285A (ja) * | 2001-10-25 | 2003-05-08 | Seiko Epson Corp | 銅めっき方法およびめっき製品 |
| JP2006016684A (ja) * | 2004-07-05 | 2006-01-19 | Ebara Corp | 配線形成方法及び配線形成装置 |
| JP2009108386A (ja) * | 2007-10-31 | 2009-05-21 | Sumitomo Metal Mining Co Ltd | 電気回路用アルミニウムベース放熱基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150079785A1 (en) | 2015-03-19 |
| TWI570254B (zh) | 2017-02-11 |
| US9837308B2 (en) | 2017-12-05 |
| KR101826302B1 (ko) | 2018-02-06 |
| JP2013204071A (ja) | 2013-10-07 |
| KR20140138714A (ko) | 2014-12-04 |
| TW201408799A (zh) | 2014-03-01 |
| JP6054049B2 (ja) | 2016-12-27 |
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