JP2013204071A - めっき処理方法、めっき処理システムおよび記憶媒体 - Google Patents
めっき処理方法、めっき処理システムおよび記憶媒体 Download PDFInfo
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- JP2013204071A JP2013204071A JP2012072328A JP2012072328A JP2013204071A JP 2013204071 A JP2013204071 A JP 2013204071A JP 2012072328 A JP2012072328 A JP 2012072328A JP 2012072328 A JP2012072328 A JP 2012072328A JP 2013204071 A JP2013204071 A JP 2013204071A
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- Prior art keywords
- plating
- layer
- substrate
- vacuum deposition
- plating layer
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- Granted
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- 238000000034 method Methods 0.000 title claims abstract description 90
- 238000003860 storage Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 205
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 87
- 239000003054 catalyst Substances 0.000 claims abstract description 38
- 238000001179 sorption measurement Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims description 53
- 238000009792 diffusion process Methods 0.000 claims description 12
- 230000032258 transport Effects 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000007822 coupling agent Substances 0.000 claims description 4
- 238000004590 computer program Methods 0.000 claims description 2
- 208000037998 chronic venous disease Diseases 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 28
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- 230000007246 mechanism Effects 0.000 description 29
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- 238000004140 cleaning Methods 0.000 description 11
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- 230000002265 prevention Effects 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
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- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
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- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
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Abstract
【解決手段】基板に対してめっき処理を施すめっき処理方法は、基板2に対して真空蒸着処理を施して基板2上に真空蒸着処理層2Aを形成する工程と、基板2の真空蒸着処理層2A上に密着層21および触媒吸着層22を順次設ける工程と、基板2の触媒吸着層22上にバリア膜として機能する第1めっき層23aと、第2めっき層23bとを有するめっき層積層体23を形成する工程とを備えている。真空蒸着処理層2Aによって基板2表面を円滑化させることができ、真空蒸着処理層2Aは密着性を高める下地層として機能する。
【選択図】図2
Description
図1乃至図8により本発明の一実施の形態について説明する。
このうち真空蒸着処理層形成部27は図8に示すように、密閉された密閉ケーシング27aと、密閉ケーシング27a内部に設けられ基板2を保持する基板ホルダ27dと、基板ホルダ27dに保持された基板2表面に対して蒸着される金属が貯えられている蒸発源27Aとを備えている。また密閉ケーシング27aには密閉ケーシング27a内を真空引きする真空排気口27bが設けられ、真空排気口27bには図示しない真空ポンプが接続され、このため密閉ケーシング27aは真空室として機能する。
次にめっき層形成部14および無電解Cuめっき層形成部16について述べる。
このうち基板回転保持機構110は、図5および図6に示すように、ケーシング101内で上下に伸延する中空円筒状の回転軸111と、回転軸111の上端部に取り付けられたターンテーブル112と、ターンテーブル112の上面外周部に設けられ、基板2を支持するウエハチャック113と、回転軸111を回転駆動する回転機構162と、を有している。このうち回転機構162は、制御機構160により制御され、回転機構162によって回転軸111が回転駆動され、これによって、ウエハチャック113により支持されている基板2が回転される。
次に、基板2の表面にめっき液や洗浄液などを供給する液供給機構30,90について、図5および図6を参照して説明する。液供給機構30,90は、基板2の表面に対してめっき処理を施すめっき液を供給するめっき液供給機構30と、基板2の表面に洗浄処理液を供給する洗浄処理液供給機構90と、を含んでいる。
洗浄処理液供給機構90は、後述するように基板2の洗浄工程において用いられるものであり、図5に示すように、ノズルヘッド104に取り付けられたノズル92を含んでいる。この場合、ノズル92から、洗浄処理液またはリンス処理液のいずれかが選択的に基板2の表面に吐出される。
次に、基板2から飛散しためっき液や洗浄液などを排出する液排出機構120,125,130について、図5を参照して説明する。図5に示すように、ケーシング101内には、昇降機構164により上下方向に駆動され、排出口124,129,134を有するカップ105が配置されている。液排出機構120,125,130は、それぞれ排出口124,129,134に集められる液を排出するものとなっている。
次にめっき層焼きしめ部15について述べる。
次に本発明の変形例について述べる。上記実施の形態において、Cu拡散防止膜(バリア膜)として機能するめっき層積層体23が、第1めっき層23aと第2めっき層23bとを有する例を示したが、これに限らずシート膜として機能する無電解Cuめっき層24を第1めっき層24aと第2めっき層24bとを有するめっき層積層体24から構成してもよい(図8)。
2A 真空蒸着処理層
2a 凹部
10 めっき処理システム
11 基板搬送アーム
12 密着層形成部
13 触媒吸着層形成部
14 めっき層形成部
15 めっき層焼きしめ部
15A ホットプレート
15a 密閉ケーシング
15b 排気口
15c N2ガス供給口
16 無電解Cuめっき層形成部
17 電解Cuめっき層形成部
18 カセットステーション
19 制御部
19A 記憶媒体
21 密着層
22 触媒吸着層
23 めっき層積層体
23a 第1めっき層
23b 第2めっき層
24 無電解Cuめっき層
25 電解Cuめっき層
27 真空蒸着処理層形成部
Claims (12)
- 基板に対してめっき処理を施すめっき処理方法において、
基板を準備する工程と、
基板に対して真空蒸着処理を施して、基板上に真空蒸着処理層を形成する工程と、
基板に対してめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成する工程とを備えたことを特徴とするめっき処理方法。 - めっき層は、Cu拡散防止膜としての機能を有することを特徴とする請求項1記載のめっき処理方法。
- めっき層は、電解Cuめっき層形成用のシード膜としての機能を有することを特徴とする請求項1記載のめっき処理方法。
- めっき層を形成する前に、基板上に触媒を吸着させて触媒吸着層を形成することを特徴とする請求項2記載のめっき処理方法。
- 触媒吸着層を形成する前に、基板の真空蒸着処理層上にカップリング剤を吸着させて密着層を形成することを特徴とする請求項4記載のめっき処理方法。
- 真空蒸着処理層はPVD処理層からなることを特徴とする請求項1記載のめっき処理方法。
- 真空蒸着処理層はCVD処理層からなることを特徴とする請求項1記載のめっき処理方法。
- 基板は凹部を有し、真空蒸着処理層は少なくとも凹部外側の基板外面に形成されることを特徴とする請求項1記載のめっき処理方法。
- 基板に対してめっき処理を施すめっき処理システムにおいて、
基板に対して真空蒸着処理を施して、基板表面に真空蒸着処理層を形成する真空蒸着処理層形成部と、
基板上にめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成するめっき層形成部と、
真空蒸着処理層形成部と、めっき層形成部との間で基板を搬送する基板搬送部と、
真空蒸着処理層形成部、めっき層形成部および基板搬送部を制御する制御部とを備えたことを特徴とするめっき処理システム。 - めっき層を形成する前に基板上に触媒を吸着させて触媒吸着層を形成する触媒吸着層形成部を設けたことを特徴とする請求項9記載のめっき処理システム。
- 触媒吸着層を形成する前に基板上にカップリング剤を吸着させて密着層を形成する密着層形成部を設けたことを特徴とする請求項10記載のめっき処理システム。
- めっき処理システムにめっき処理方法を実行させるためのコンピュータプログラムを格納した記憶媒体において、
めっき処理方法は、
基板を準備する工程と、
基板に対して真空蒸着処理を施して、基板上に真空蒸着処理層を形成する工程と、
基板に対してめっき液を用いてめっき処理を施して、真空蒸着処理層上に特定機能を有するめっき層を形成する工程とを備えたことを特徴とする記憶媒体。
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US14/384,861 US9837308B2 (en) | 2012-03-27 | 2013-02-22 | Plating method, plating system and storage medium |
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JP2019135330A (ja) * | 2019-05-09 | 2019-08-15 | 東京エレクトロン株式会社 | めっき処理方法及びめっき処理部品並びにめっき処理システム |
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KR101826302B1 (ko) | 2018-02-06 |
TW201408799A (zh) | 2014-03-01 |
WO2013145979A1 (ja) | 2013-10-03 |
US9837308B2 (en) | 2017-12-05 |
TWI570254B (zh) | 2017-02-11 |
JP6054049B2 (ja) | 2016-12-27 |
US20150079785A1 (en) | 2015-03-19 |
KR20140138714A (ko) | 2014-12-04 |
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