JP2015145514A - 無電解めっき方法、無電解めっき装置および記憶媒体 - Google Patents
無電解めっき方法、無電解めっき装置および記憶媒体 Download PDFInfo
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- 238000007772 electroless plating Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims description 35
- 239000002184 metal Substances 0.000 claims abstract description 227
- 229910052751 metal Inorganic materials 0.000 claims abstract description 227
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000003054 catalyst Substances 0.000 claims abstract description 43
- 150000002736 metal compounds Chemical class 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 230000003197 catalytic effect Effects 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 17
- 238000001312 dry etching Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
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- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】基板11上にパターニングされた第1金属層12を設ける(図1(a)(b))。次に第1金属層12上に金属犠牲層15を形成するとともに、金属犠牲層15の金属と置換可能なイオン化された金属を含む水溶液を金属犠牲層15上に塗布する。このことにより、金属犠牲層15上に触媒層16を形成する(図1(c))。次に触媒層16上に無電解めっきを施して第2金属層18を形成し(図1(d))、この第2金属層18をマスクとして基板11にエッチングを施す。
【選択図】図1
Description
12 第1金属層
13 レジストパターン
15 金属犠牲層
16 触媒層
18 第2金属層
23 レジストパターン
30 無電解めっき装置
31 第1金属層形成部
32 金属犠牲層形成部
33 触媒層形成部
34 第2金属層形成部
35 エッチング部
40 制御装置
41 記憶媒体
Claims (13)
- 触媒性をもたない金属化合物からなるパターニングされた第1金属層と、金属犠牲層とが順次形成された基板に対して無電解めっきを施す無電解めっき方法において、
前記金属犠牲層の金属と置換可能なイオン化された金属を含む水溶液を前記金属犠牲上に塗布することにより、前記金属犠牲層上に触媒層を形成する工程と、
前記触媒層上に無電解めっきを施すことにより第2金属層を形成する工程を備えたことを特徴とする無電解めっき方法。 - 前記触媒層を形成する前に前記基板上に触媒性をもたない金属化合物からなるパターニングされた第1金属層を形成する工程と、
前記第1金属層上に前記金属犠牲層を形成する工程とを更に備えたことを特徴とする請求項1記載の無電解めっき方法。 - 前記第1金属層の金属化合物は、TiN又はTaNからなることを特徴とする請求項1または2記載の無電解めっき方法。
- 前記金属犠牲層の金属はTi、W、Cu、Ni、又はCoからなることを特徴とする請求項1乃至3のいずれか記載の無電解めっき方法。
- 前記触媒層の金属はPd、Au、Ptからなることを特徴とする請求項1乃至4のいずれか記載の無電解めっき方法。
- 前記第2金属層はNiの無電解めっき層からなることを特徴とする請求項1乃至5のいずれか記載の無電解めっき方法。
- 触媒性をもたない金属化合物からなるパターニングされた第1金属層と、金属犠牲層とが順次形成された基板に対して無電解めっき層を施す無電解めっき装置において、
前記金属犠牲層の金属と置換可能なイオン化された金属を含む水溶液を前記金属犠牲層上に塗布することにより、前記金属犠牲層上に触媒層を形成する触媒層形成部と、
前記触媒層上に無電解めっきを施すことにより第2金属層を形成する第2金属層形成部を備えたことを特徴とする無電解めっき装置。 - 前記触媒層を形成する前に前記基板上に触媒性をもたない金属化合物からなるパターニングされた第1金属層を形成する第1金属層形成部と、
前記第1金属層上に前記金属犠牲層を形成する金属犠牲層形成部とを更に備えたことを特徴とする請求項7記載の無電解めっき装置。 - 前記第1金属層の金属化合物は、TiN又はTaNからなることを特徴とする請求項7または8記載の無電解めっき装置。
- 前記金属犠牲層の金属はTi、W、Cu、Ni、又はCoからなることを特徴とする請求項7乃至9のいずれか記載の無電解めっき装置。
- 前記触媒層の金属はPd、Au、Ptからなることを特徴とする請求項7乃至10のいずれか記載の無電解めっき装置。
- 前記第2金属層はNiの無電解めっき層からなることを特徴とする請求項7乃至11のいずれか記載の無電解めっき装置。
- コンピュータに無電解めっき方法を実行させるためのプログラムを格納した記憶媒体において、
無電解めっき方法は、触媒性をもたない金属化合物からなるパターニングされた第1金属層と、金属犠牲層とが順次形成された基板に対して無電解めっきを施す無電解めっき方法であって、
前記金属犠牲層の金属と置換可能なイオン化された金属を含む水溶液を前記金属犠牲上に塗布することにより、前記金属犠牲層上に触媒層を形成する工程と、
前記触媒層上に無電解めっきを施すことにより第2金属層を形成する工程を備えたことを特徴とする記憶媒体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014017694A JP6169500B2 (ja) | 2014-01-31 | 2014-01-31 | 無電解めっき方法、無電解めっき装置および記憶媒体 |
TW104101959A TWI618815B (zh) | 2014-01-31 | 2015-01-21 | Electroless plating method and memory medium |
KR1020150015371A KR20150091264A (ko) | 2014-01-31 | 2015-01-30 | 무전해 도금 방법, 무전해 도금 장치 및 기억 매체 |
US14/609,848 US20150218702A1 (en) | 2014-01-31 | 2015-01-30 | Electroless plating method, electroless plating apparatus and storage medium |
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JP2014017694A JP6169500B2 (ja) | 2014-01-31 | 2014-01-31 | 無電解めっき方法、無電解めっき装置および記憶媒体 |
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JP2015145514A true JP2015145514A (ja) | 2015-08-13 |
JP6169500B2 JP6169500B2 (ja) | 2017-07-26 |
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US (1) | US20150218702A1 (ja) |
JP (1) | JP6169500B2 (ja) |
KR (1) | KR20150091264A (ja) |
TW (1) | TWI618815B (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001023933A (ja) * | 1999-07-12 | 2001-01-26 | Rohm Co Ltd | 半導体装置の製造方法 |
US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
JP2006063386A (ja) * | 2004-08-26 | 2006-03-09 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP2013204071A (ja) * | 2012-03-27 | 2013-10-07 | Tokyo Electron Ltd | めっき処理方法、めっき処理システムおよび記憶媒体 |
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JP2881963B2 (ja) * | 1990-05-25 | 1999-04-12 | ソニー株式会社 | 配線基板及びその製造方法 |
US6261637B1 (en) * | 1995-12-15 | 2001-07-17 | Enthone-Omi, Inc. | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication |
US6004839A (en) * | 1996-01-17 | 1999-12-21 | Nec Corporation | Semiconductor device with conductive plugs |
JPH11340228A (ja) * | 1998-05-28 | 1999-12-10 | Fujitsu Ltd | Al合金配線を有する半導体装置 |
US6436816B1 (en) * | 1998-07-31 | 2002-08-20 | Industrial Technology Research Institute | Method of electroless plating copper on nitride barrier |
JP2005072139A (ja) * | 2003-08-21 | 2005-03-17 | Sony Corp | 磁気記憶装置及びその製造方法 |
JP4612534B2 (ja) * | 2005-12-01 | 2011-01-12 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP4468469B2 (ja) * | 2008-07-25 | 2010-05-26 | 株式会社東芝 | 磁気記録媒体の製造方法 |
JP5651616B2 (ja) * | 2012-02-17 | 2015-01-14 | 株式会社東芝 | 磁気記録媒体、及びその製造方法 |
-
2014
- 2014-01-31 JP JP2014017694A patent/JP6169500B2/ja active Active
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2015
- 2015-01-21 TW TW104101959A patent/TWI618815B/zh active
- 2015-01-30 US US14/609,848 patent/US20150218702A1/en not_active Abandoned
- 2015-01-30 KR KR1020150015371A patent/KR20150091264A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001023933A (ja) * | 1999-07-12 | 2001-01-26 | Rohm Co Ltd | 半導体装置の製造方法 |
US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
JP2006063386A (ja) * | 2004-08-26 | 2006-03-09 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP2013204071A (ja) * | 2012-03-27 | 2013-10-07 | Tokyo Electron Ltd | めっき処理方法、めっき処理システムおよび記憶媒体 |
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Publication number | Publication date |
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TWI618815B (zh) | 2018-03-21 |
KR20150091264A (ko) | 2015-08-10 |
JP6169500B2 (ja) | 2017-07-26 |
TW201542872A (zh) | 2015-11-16 |
US20150218702A1 (en) | 2015-08-06 |
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