JP2008510676A5 - - Google Patents
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- Publication number
- JP2008510676A5 JP2008510676A5 JP2007528725A JP2007528725A JP2008510676A5 JP 2008510676 A5 JP2008510676 A5 JP 2008510676A5 JP 2007528725 A JP2007528725 A JP 2007528725A JP 2007528725 A JP2007528725 A JP 2007528725A JP 2008510676 A5 JP2008510676 A5 JP 2008510676A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- quartz glass
- slip
- slip layer
- dried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 327
- 235000012239 silicon dioxide Nutrition 0.000 claims description 109
- 239000000377 silicon dioxide Substances 0.000 claims description 106
- 239000000463 material Substances 0.000 claims description 71
- 239000002245 particle Substances 0.000 claims description 68
- 239000011521 glass Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000008187 granular material Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000008719 thickening Effects 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 238000001238 wet grinding Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 81
- 238000004017 vitrification Methods 0.000 description 35
- 238000005245 sintering Methods 0.000 description 23
- 238000001035 drying Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011324 bead Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000011265 semifinished product Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000008014 freezing Effects 0.000 description 3
- 238000007710 freezing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007569 slipcasting Methods 0.000 description 2
- 238000007605 air drying Methods 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007590 electrostatic spraying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000010512 thermal transition Effects 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004040833 | 2004-08-23 | ||
| DE102004052312A DE102004052312A1 (de) | 2004-08-23 | 2004-10-28 | Beschichtetes Bauteil aus Quarzglas sowie Verfahren zur Herstellung des Bauteils |
| PCT/EP2005/009073 WO2006021415A2 (de) | 2004-08-23 | 2005-08-23 | Beschichtetes bauteil aus quarzglas sowie verfahren zur herstellung des bauteils |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008510676A JP2008510676A (ja) | 2008-04-10 |
| JP2008510676A5 true JP2008510676A5 (enExample) | 2011-01-27 |
Family
ID=35355640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007528725A Pending JP2008510676A (ja) | 2004-08-23 | 2005-08-23 | 石英ガラスの被覆部材および前記部材の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080075949A1 (enExample) |
| EP (2) | EP1789370B1 (enExample) |
| JP (1) | JP2008510676A (enExample) |
| DE (1) | DE102004052312A1 (enExample) |
| WO (1) | WO2006021415A2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5050363B2 (ja) * | 2005-08-12 | 2012-10-17 | 株式会社Ｓｕｍｃｏ | 半導体シリコン基板用熱処理治具およびその製作方法 |
| JP2007261875A (ja) * | 2006-03-28 | 2007-10-11 | Tosoh Quartz Corp | 表面に粗面化層を形成した石英ガラス部材 |
| DE102006043738B4 (de) * | 2006-09-13 | 2008-10-16 | Heraeus Quarzglas Gmbh & Co. Kg | Bauteil aus Quarzglas zum Einsatz bei der Halbleiterfertigung und Verfahren zur Herstellung desselben |
| DE102006052512A1 (de) * | 2006-11-06 | 2008-05-08 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung von opakem Quarzglas, nach dem Verfahren erhaltenes Halbzeug sowie daraus hergestelltes Bauteil |
| DE102006062166B4 (de) | 2006-12-22 | 2009-05-14 | Heraeus Quarzglas Gmbh & Co. Kg | Quarzglas-Bauteil mit Reflektorschicht sowie Verfahren zur Herstellung desselben |
| DE102007008696B3 (de) * | 2007-02-20 | 2008-10-02 | Heraeus Noblelight Gmbh | Infrarotstrahler mit opakem Reflektor und seine Herstellung |
| DE102007017004A1 (de) * | 2007-02-27 | 2008-08-28 | Heraeus Quarzglas Gmbh & Co. Kg | Optisches Bauteil aus synthetischem Quarzglas mit erhöhter Strahlenbeständigkeit, sowie Verfahren zur Herstellung des Bauteils |
| US7718559B2 (en) * | 2007-04-20 | 2010-05-18 | Applied Materials, Inc. | Erosion resistance enhanced quartz used in plasma etch chamber |
| DE102007030698B4 (de) | 2007-06-30 | 2009-06-10 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines Verbundkörpers aus einem Basiskörper aus opakem Quarzglas und einer dichten Versiegelungsschicht sowie Verwendung des Verbundkörpers |
| US20090308315A1 (en) * | 2008-06-13 | 2009-12-17 | Asm International N.V. | Semiconductor processing apparatus with improved thermal characteristics and method for providing the same |
| DE102008049325B4 (de) * | 2008-09-29 | 2011-08-25 | Heraeus Quarzglas GmbH & Co. KG, 63450 | Verfahren zur Herstellung eines rohrförmigen Halbzeugs aus Quarzglas sowie Halbzeug aus Quarzglas |
| JP5402391B2 (ja) * | 2009-01-27 | 2014-01-29 | 信越化学工業株式会社 | 半導体用合成石英ガラス基板の加工方法 |
| KR20150041610A (ko) * | 2012-07-18 | 2015-04-16 | 호야 가부시키가이샤 | 유리 성형품 및 그 제조 방법, 광학 소자 블랭크, 그리고 광학 소자 및 그 제조 방법 |
| DE102012109930A1 (de) * | 2012-10-18 | 2014-04-24 | Heraeus Noblelight Gmbh | Strahlereinheit zur Erzeugung ultravioletter Strahlung sowie Verfahren zu deren Herstellung |
| SG11201508512PA (en) * | 2013-05-23 | 2015-12-30 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
| US9296614B1 (en) * | 2014-11-12 | 2016-03-29 | Corning Incorporated | Substrate such as for use with carbon nanotubes |
| EP3173386B1 (de) * | 2015-11-25 | 2018-05-02 | Heraeus Quarzglas GmbH & Co. KG | Verfahren zur herstellung eines verbundkörpers aus hochkieselsäurehaltigem werkstoff |
| CN108698894A (zh) | 2015-12-18 | 2018-10-23 | 贺利氏石英玻璃有限两合公司 | 在多腔式烘箱中制备石英玻璃体 |
| WO2017103131A1 (de) | 2015-12-18 | 2017-06-22 | Heraeus Quarzglas Gmbh & Co. Kg | Verringern des erdalkalimetallgehalts von siliziumdioxidgranulat durch behandlung von kohlenstoffdotiertem siliziumdioxidgranulat bei hoher temperatur |
| TWI733723B (zh) | 2015-12-18 | 2021-07-21 | 德商何瑞斯廓格拉斯公司 | 不透明石英玻璃體的製備 |
| KR20180094087A (ko) | 2015-12-18 | 2018-08-22 | 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 | 실리카 과립으로부터 실리카 유리 제품의 제조 |
| CN108698883A (zh) | 2015-12-18 | 2018-10-23 | 贺利氏石英玻璃有限两合公司 | 石英玻璃制备中的二氧化硅的喷雾造粒 |
| JP6940235B2 (ja) | 2015-12-18 | 2021-09-22 | ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー | 高融点金属の溶融坩堝内での石英ガラス体の調製 |
| EP3390303B1 (de) | 2015-12-18 | 2024-02-07 | Heraeus Quarzglas GmbH & Co. KG | Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen |
| WO2017103153A1 (de) | 2015-12-18 | 2017-06-22 | Heraeus Quarzglas Gmbh & Co. Kg | Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt |
| CN109153593A (zh) | 2015-12-18 | 2019-01-04 | 贺利氏石英玻璃有限两合公司 | 合成石英玻璃粉粒的制备 |
| KR20180095619A (ko) | 2015-12-18 | 2018-08-27 | 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 | 실리카 유리 제조 동안 규소 함량의 증가 |
| EP3428132B1 (de) | 2017-07-10 | 2023-08-30 | Heraeus Quarzglas GmbH & Co. KG | Quarzglasbauteil mit hoher thermischer stabilität, halbzeug dafür und verfahren zur herstellung desselben |
| JP7162491B2 (ja) * | 2018-10-17 | 2022-10-28 | 信越石英株式会社 | 多層構造シリカガラス体の製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2976171A (en) * | 1957-10-14 | 1961-03-21 | Smith Corp A O | Glass coated steel structure and method of making the same |
| US3972704A (en) * | 1971-04-19 | 1976-08-03 | Sherwood Refractories, Inc. | Apparatus for making vitreous silica receptacles |
| US5045751A (en) * | 1988-10-25 | 1991-09-03 | Asahi Glass Company Ltd. | Cathode ray tube of improved breakdown voltage characteristic |
| EP0367269A3 (en) * | 1988-11-04 | 1991-11-13 | Asahi Glass Company Ltd. | Method for reinforcing glass, film-forming composition for the reinforcement of glass and reinforced glass articles |
| AU632240B2 (en) * | 1990-08-27 | 1992-12-17 | Furukawa Electric Co. Ltd., The | Method for manufacturing a silica glass base material |
| JPH04124044A (ja) * | 1990-09-15 | 1992-04-24 | Furukawa Electric Co Ltd:The | 石英系ガラス母材の製造方法 |
| DE4338807C1 (de) * | 1993-11-12 | 1995-01-26 | Heraeus Quarzglas | Formkörper mit hohem Gehalt an Siliziumdioxid und Verfahren zur Herstellung solcher Formkörper |
| DE4417405A1 (de) * | 1994-05-18 | 1995-11-23 | Inst Neue Mat Gemein Gmbh | Verfahren zur Herstellung von strukturierten anorganischen Schichten |
| US6355587B1 (en) * | 1994-06-30 | 2002-03-12 | Ted A. Loxley | Quartz glass products and methods for making same |
| GB9722020D0 (en) | 1997-10-17 | 1997-12-17 | Tsl Group Plc | Production of quartz glass articles having high surface purity |
| US6248671B1 (en) * | 1998-08-19 | 2001-06-19 | Micron Technology, Inc. | Semiconductor processing apparatuses, and methods of forming antireflective coating materials over substrates |
| JP2000086251A (ja) * | 1998-09-17 | 2000-03-28 | Ushio Inc | 焼結石英ガラス成形体の焼結方法 |
| JP3837942B2 (ja) * | 1998-09-28 | 2006-10-25 | ウシオ電機株式会社 | 焼結石英ガラス成形体の製造方法 |
| JP2001163629A (ja) * | 1999-12-08 | 2001-06-19 | Toshiba Ceramics Co Ltd | 半導体処理炉用断熱体とその製造方法 |
| DE19962451C1 (de) * | 1999-12-22 | 2001-08-30 | Heraeus Quarzglas | Verfahren für die Herstellung von opakem Quarzglas und für die Durchführung des Verfahrens geeignetes Si0¶2¶-Granulat |
| DE10163939A1 (de) * | 2001-12-22 | 2003-07-10 | Degussa | Schicht erhalten aus einer wässerigen Dispersion enthaltend flammenhydrolytisch hergestelltes Silicium-Titan-Mischoxidpulver |
| DE10243954B3 (de) * | 2002-09-20 | 2004-07-08 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren für die Herstellung eines opaken Quarzglas-Kompositwerkstoffs sowie Verwendung desselben |
| JP4444559B2 (ja) * | 2002-10-09 | 2010-03-31 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボの強化方法とシリコン単結晶の引き上げ方法 |
| DE102004038602B3 (de) * | 2004-08-07 | 2005-12-29 | Heraeus Quarzglas Gmbh & Co. Kg | Elektrogeschmolzenes, synthetisches Quarzglas, insbesondere für den Einsatz in der Lampen- und in der Halbleiterfertigung und Verfahren zur Herstellung desselben |
-
2004
- 2004-10-28 DE DE102004052312A patent/DE102004052312A1/de not_active Withdrawn
-
2005
- 2005-08-23 JP JP2007528725A patent/JP2008510676A/ja active Pending
- 2005-08-23 WO PCT/EP2005/009073 patent/WO2006021415A2/de not_active Ceased
- 2005-08-23 EP EP05781997.1A patent/EP1789370B1/de not_active Expired - Lifetime
- 2005-08-23 EP EP10182969.5A patent/EP2263981B1/de not_active Expired - Lifetime
- 2005-08-23 US US11/661,160 patent/US20080075949A1/en not_active Abandoned
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