SG11201508512PA - A coated liner assembly for a semiconductor processing chamber - Google Patents

A coated liner assembly for a semiconductor processing chamber

Info

Publication number
SG11201508512PA
SG11201508512PA SG11201508512PA SG11201508512PA SG11201508512PA SG 11201508512P A SG11201508512P A SG 11201508512PA SG 11201508512P A SG11201508512P A SG 11201508512PA SG 11201508512P A SG11201508512P A SG 11201508512PA SG 11201508512P A SG11201508512P A SG 11201508512PA
Authority
SG
Singapore
Prior art keywords
processing chamber
semiconductor processing
liner assembly
coated liner
coated
Prior art date
Application number
SG11201508512PA
Inventor
Joseph M Ranish
Satheesh Kuppurao
Kailash Kiran Patalay
Paul Brillhart
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201508512PA publication Critical patent/SG11201508512PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
SG11201508512PA 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber SG11201508512PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361826680P 2013-05-23 2013-05-23
PCT/US2014/033362 WO2014189622A1 (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber

Publications (1)

Publication Number Publication Date
SG11201508512PA true SG11201508512PA (en) 2015-12-30

Family

ID=51933948

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201508512PA SG11201508512PA (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber
SG10201709699RA SG10201709699RA (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201709699RA SG10201709699RA (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber

Country Status (7)

Country Link
US (2) US20140345525A1 (en)
JP (1) JP6457498B2 (en)
KR (1) KR102202406B1 (en)
CN (2) CN105210173A (en)
SG (2) SG11201508512PA (en)
TW (4) TWI694493B (en)
WO (1) WO2014189622A1 (en)

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TW202004856A (en) 2020-01-16
SG10201709699RA (en) 2017-12-28
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TWI745717B (en) 2021-11-11
US20140345526A1 (en) 2014-11-27
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US20140345525A1 (en) 2014-11-27
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CN105210173A (en) 2015-12-30
TWI805498B (en) 2023-06-11
WO2014189622A1 (en) 2014-11-27
JP2016526297A (en) 2016-09-01
TW201501180A (en) 2015-01-01
TW202207286A (en) 2022-02-16
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KR20160013158A (en) 2016-02-03
TWI694493B (en) 2020-05-21

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