JP2008503874A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008503874A5 JP2008503874A5 JP2007516582A JP2007516582A JP2008503874A5 JP 2008503874 A5 JP2008503874 A5 JP 2008503874A5 JP 2007516582 A JP2007516582 A JP 2007516582A JP 2007516582 A JP2007516582 A JP 2007516582A JP 2008503874 A5 JP2008503874 A5 JP 2008503874A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical
- polishing composition
- mechanical polishing
- composition according
- halide salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 24
- -1 halide salt Chemical class 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 5
- 150000001735 carboxylic acids Chemical class 0.000 claims 4
- 150000001450 anions Chemical class 0.000 claims 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 150000001768 cations Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims 1
- 150000001991 dicarboxylic acids Chemical class 0.000 claims 1
- 150000002763 monocarboxylic acids Chemical class 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/871,774 US20050279733A1 (en) | 2004-06-18 | 2004-06-18 | CMP composition for improved oxide removal rate |
| US10/871,774 | 2004-06-18 | ||
| PCT/US2005/020614 WO2006009640A1 (en) | 2004-06-18 | 2005-06-10 | Cmp composition for improved oxide removal rate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011275846A Division JP5264985B2 (ja) | 2004-06-18 | 2011-12-16 | 改善された酸化物除去速度のためのｃｍｐ組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008503874A JP2008503874A (ja) | 2008-02-07 |
| JP2008503874A5 true JP2008503874A5 (enExample) | 2008-07-10 |
| JP4938654B2 JP4938654B2 (ja) | 2012-05-23 |
Family
ID=34972454
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007516582A Expired - Fee Related JP4938654B2 (ja) | 2004-06-18 | 2005-06-10 | 改善された酸化物除去速度のためのｃｍｐ組成物 |
| JP2011275846A Expired - Fee Related JP5264985B2 (ja) | 2004-06-18 | 2011-12-16 | 改善された酸化物除去速度のためのｃｍｐ組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011275846A Expired - Fee Related JP5264985B2 (ja) | 2004-06-18 | 2011-12-16 | 改善された酸化物除去速度のためのｃｍｐ組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20050279733A1 (enExample) |
| EP (1) | EP1797151B1 (enExample) |
| JP (2) | JP4938654B2 (enExample) |
| CN (1) | CN101379154B (enExample) |
| AT (1) | ATE537232T1 (enExample) |
| IL (1) | IL179570A (enExample) |
| TW (1) | TWI313031B (enExample) |
| WO (1) | WO2006009640A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8038752B2 (en) * | 2004-10-27 | 2011-10-18 | Cabot Microelectronics Corporation | Metal ion-containing CMP composition and method for using the same |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7803203B2 (en) * | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| CN102827549B (zh) * | 2012-09-04 | 2014-05-07 | 上海新安纳电子科技有限公司 | 一种氧化硅介电材料用化学机械抛光液 |
| JP6422325B2 (ja) * | 2014-12-15 | 2018-11-14 | 花王株式会社 | 半導体基板用研磨液組成物 |
| EP3344716A4 (en) * | 2015-09-03 | 2019-04-10 | Cabot Microelectronics Corporation | METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE |
| JP6551136B2 (ja) * | 2015-10-14 | 2019-07-31 | 日立化成株式会社 | Ｃｍｐ用研磨液及び研磨方法 |
| CN109155246B (zh) * | 2016-04-22 | 2024-01-05 | 日挥触媒化成株式会社 | 二氧化硅系复合微粒分散液及其制造方法 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| CN110922896A (zh) * | 2019-11-18 | 2020-03-27 | 宁波日晟新材料有限公司 | 一种高效环保碳化硅抛光液及其制备方法和应用 |
| CN117070148A (zh) * | 2023-08-21 | 2023-11-17 | 河北工业大学 | 基于乙酸-乙酸铵缓冲液体系的高稳定性二氧化铈抛光液 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3886146T2 (de) * | 1987-09-10 | 1994-04-14 | Kawasaki Steel Co | Siliziumstahlbleche mit niedrigem Eisenverlust und Verfahren zur Herstellung derselben. |
| US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| US5695384A (en) * | 1994-12-07 | 1997-12-09 | Texas Instruments Incorporated | Chemical-mechanical polishing salt slurry |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| EP0853335A3 (en) * | 1997-01-10 | 1999-01-07 | Texas Instruments Incorporated | Slurry and process for the mechano-chemical polishing of semiconductor devices |
| JP3149914B2 (ja) * | 1997-09-11 | 2001-03-26 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6019806A (en) * | 1998-01-08 | 2000-02-01 | Sees; Jennifer A. | High selectivity slurry for shallow trench isolation processing |
| ATE266071T1 (de) * | 1998-02-24 | 2004-05-15 | Showa Denko Kk | Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben |
| JP4257687B2 (ja) * | 1999-01-11 | 2009-04-22 | 株式会社トクヤマ | 研磨剤および研磨方法 |
| US6428387B1 (en) * | 1999-08-04 | 2002-08-06 | Texas Instruments Incorporated | Method for chemical mechanical polishing using a high selective slurry |
| JP2001068437A (ja) * | 1999-08-26 | 2001-03-16 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
| US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
| US6350393B2 (en) * | 1999-11-04 | 2002-02-26 | Cabot Microelectronics Corporation | Use of CsOH in a dielectric CMP slurry |
| JP3956587B2 (ja) * | 1999-11-18 | 2007-08-08 | Ｈｏｙａ株式会社 | 磁気ディスク用ガラス基板の洗浄方法 |
| US6432826B1 (en) * | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
| US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US20020039839A1 (en) * | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
| CN1422314A (zh) * | 2000-04-11 | 2003-06-04 | 卡伯特微电子公司 | 用于优先除去氧化硅的系统 |
| US6858540B2 (en) * | 2000-05-11 | 2005-02-22 | Applied Materials, Inc. | Selective removal of tantalum-containing barrier layer during metal CMP |
| KR100396881B1 (ko) * | 2000-10-16 | 2003-09-02 | 삼성전자주식회사 | 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법 |
| US6461227B1 (en) * | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
| US6350692B1 (en) * | 2000-12-14 | 2002-02-26 | Infineon Technologies Ag | Increased polish removal rate of dielectric layers using fixed abrasive pads |
| DE10063491A1 (de) * | 2000-12-20 | 2002-06-27 | Bayer Ag | Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten |
| US7012025B2 (en) * | 2001-01-05 | 2006-03-14 | Applied Materials Inc. | Tantalum removal during chemical mechanical polishing |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US6485355B1 (en) * | 2001-06-22 | 2002-11-26 | International Business Machines Corporation | Method to increase removal rate of oxide using fixed-abrasive |
| US6812193B2 (en) * | 2001-08-31 | 2004-11-02 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| US6730592B2 (en) * | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US6821309B2 (en) * | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
| KR100474537B1 (ko) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | 산화막용 ｃｍｐ 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
| GB2393447B (en) * | 2002-08-07 | 2006-04-19 | Kao Corp | Polishing composition |
| EP1567606A1 (en) * | 2002-10-22 | 2005-08-31 | Psiloquest, Inc. | A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces |
| US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
-
2004
- 2004-06-18 US US10/871,774 patent/US20050279733A1/en not_active Abandoned
-
2005
- 2005-06-10 AT AT05760474T patent/ATE537232T1/de active
- 2005-06-10 CN CN2005800198416A patent/CN101379154B/zh not_active Expired - Fee Related
- 2005-06-10 JP JP2007516582A patent/JP4938654B2/ja not_active Expired - Fee Related
- 2005-06-10 WO PCT/US2005/020614 patent/WO2006009640A1/en not_active Ceased
- 2005-06-10 EP EP05760474A patent/EP1797151B1/en not_active Expired - Lifetime
- 2005-06-17 TW TW094120097A patent/TWI313031B/zh not_active IP Right Cessation
-
2006
- 2006-11-23 IL IL179570A patent/IL179570A/en not_active IP Right Cessation
-
2009
- 2009-04-01 US US12/384,161 patent/US20090191710A1/en not_active Abandoned
-
2011
- 2011-12-16 JP JP2011275846A patent/JP5264985B2/ja not_active Expired - Fee Related