CN101379154B - 用于改善氧化物移除速率的cmp组合物 - Google Patents

用于改善氧化物移除速率的cmp组合物 Download PDF

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Publication number
CN101379154B
CN101379154B CN2005800198416A CN200580019841A CN101379154B CN 101379154 B CN101379154 B CN 101379154B CN 2005800198416 A CN2005800198416 A CN 2005800198416A CN 200580019841 A CN200580019841 A CN 200580019841A CN 101379154 B CN101379154 B CN 101379154B
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CN
China
Prior art keywords
polishing composition
chemical
polishing
mechanical polishing
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2005800198416A
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English (en)
Chinese (zh)
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CN101379154A (zh
Inventor
菲利普·卡特
罗伯特·瓦卡西
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Cabot Corp
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Cabot Corp
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Publication of CN101379154A publication Critical patent/CN101379154A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Detergent Compositions (AREA)
CN2005800198416A 2004-06-18 2005-06-10 用于改善氧化物移除速率的cmp组合物 Expired - Fee Related CN101379154B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/871,774 US20050279733A1 (en) 2004-06-18 2004-06-18 CMP composition for improved oxide removal rate
US10/871,774 2004-06-18
PCT/US2005/020614 WO2006009640A1 (en) 2004-06-18 2005-06-10 Cmp composition for improved oxide removal rate

Publications (2)

Publication Number Publication Date
CN101379154A CN101379154A (zh) 2009-03-04
CN101379154B true CN101379154B (zh) 2011-07-13

Family

ID=34972454

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800198416A Expired - Fee Related CN101379154B (zh) 2004-06-18 2005-06-10 用于改善氧化物移除速率的cmp组合物

Country Status (8)

Country Link
US (2) US20050279733A1 (enExample)
EP (1) EP1797151B1 (enExample)
JP (2) JP4938654B2 (enExample)
CN (1) CN101379154B (enExample)
AT (1) ATE537232T1 (enExample)
IL (1) IL179570A (enExample)
TW (1) TWI313031B (enExample)
WO (1) WO2006009640A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
CN102827549B (zh) * 2012-09-04 2014-05-07 上海新安纳电子科技有限公司 一种氧化硅介电材料用化学机械抛光液
JP6422325B2 (ja) * 2014-12-15 2018-11-14 花王株式会社 半導体基板用研磨液組成物
EP3344716A4 (en) * 2015-09-03 2019-04-10 Cabot Microelectronics Corporation METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE
JP6551136B2 (ja) * 2015-10-14 2019-07-31 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
CN109155246B (zh) * 2016-04-22 2024-01-05 日挥触媒化成株式会社 二氧化硅系复合微粒分散液及其制造方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
CN110922896A (zh) * 2019-11-18 2020-03-27 宁波日晟新材料有限公司 一种高效环保碳化硅抛光液及其制备方法和应用
CN117070148A (zh) * 2023-08-21 2023-11-17 河北工业大学 基于乙酸-乙酸铵缓冲液体系的高稳定性二氧化铈抛光液

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US20030073593A1 (en) * 2001-08-31 2003-04-17 Brigham Michael Todd Slurry for mechanical polishing (CMP) of metals and use thereof
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
WO2004037937A1 (en) * 2002-10-22 2004-05-06 Psiloquest, Inc. A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces

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EP0853335A3 (en) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Slurry and process for the mechano-chemical polishing of semiconductor devices
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JP4257687B2 (ja) * 1999-01-11 2009-04-22 株式会社トクヤマ 研磨剤および研磨方法
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
US20030073593A1 (en) * 2001-08-31 2003-04-17 Brigham Michael Todd Slurry for mechanical polishing (CMP) of metals and use thereof
WO2004037937A1 (en) * 2002-10-22 2004-05-06 Psiloquest, Inc. A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces

Also Published As

Publication number Publication date
ATE537232T1 (de) 2011-12-15
TWI313031B (en) 2009-08-01
TW200605211A (en) 2006-02-01
CN101379154A (zh) 2009-03-04
IL179570A (en) 2013-02-28
US20090191710A1 (en) 2009-07-30
IL179570A0 (en) 2007-05-15
EP1797151B1 (en) 2011-12-14
JP4938654B2 (ja) 2012-05-23
JP2008503874A (ja) 2008-02-07
WO2006009640A1 (en) 2006-01-26
US20050279733A1 (en) 2005-12-22
EP1797151A1 (en) 2007-06-20
JP2012074736A (ja) 2012-04-12
JP5264985B2 (ja) 2013-08-14

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Granted publication date: 20110713

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