JP4938654B2 - 改善された酸化物除去速度のためのｃｍｐ組成物 - Google Patents

改善された酸化物除去速度のためのｃｍｐ組成物 Download PDF

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Publication number
JP4938654B2
JP4938654B2 JP2007516582A JP2007516582A JP4938654B2 JP 4938654 B2 JP4938654 B2 JP 4938654B2 JP 2007516582 A JP2007516582 A JP 2007516582A JP 2007516582 A JP2007516582 A JP 2007516582A JP 4938654 B2 JP4938654 B2 JP 4938654B2
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Japan
Prior art keywords
polishing
polishing composition
removal rate
substrate
chemical
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Expired - Fee Related
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JP2007516582A
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English (en)
Japanese (ja)
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JP2008503874A5 (enExample
JP2008503874A (ja
Inventor
カーター，フィリップ
バカシー，ロバート
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CMC Materials LLC
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Cabot Microelectronics Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Detergent Compositions (AREA)
JP2007516582A 2004-06-18 2005-06-10 改善された酸化物除去速度のためのｃｍｐ組成物 Expired - Fee Related JP4938654B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/871,774 US20050279733A1 (en) 2004-06-18 2004-06-18 CMP composition for improved oxide removal rate
US10/871,774 2004-06-18
PCT/US2005/020614 WO2006009640A1 (en) 2004-06-18 2005-06-10 Cmp composition for improved oxide removal rate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011275846A Division JP5264985B2 (ja) 2004-06-18 2011-12-16 改善された酸化物除去速度のためのｃｍｐ組成物

Publications (3)

Publication Number Publication Date
JP2008503874A JP2008503874A (ja) 2008-02-07
JP2008503874A5 JP2008503874A5 (enExample) 2008-07-10
JP4938654B2 true JP4938654B2 (ja) 2012-05-23

Family

ID=34972454

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007516582A Expired - Fee Related JP4938654B2 (ja) 2004-06-18 2005-06-10 改善された酸化物除去速度のためのｃｍｐ組成物
JP2011275846A Expired - Fee Related JP5264985B2 (ja) 2004-06-18 2011-12-16 改善された酸化物除去速度のためのｃｍｐ組成物

Family Applications After (1)

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JP2011275846A Expired - Fee Related JP5264985B2 (ja) 2004-06-18 2011-12-16 改善された酸化物除去速度のためのｃｍｐ組成物

Country Status (8)

Country Link
US (2) US20050279733A1 (enExample)
EP (1) EP1797151B1 (enExample)
JP (2) JP4938654B2 (enExample)
CN (1) CN101379154B (enExample)
AT (1) ATE537232T1 (enExample)
IL (1) IL179570A (enExample)
TW (1) TWI313031B (enExample)
WO (1) WO2006009640A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
CN102827549B (zh) * 2012-09-04 2014-05-07 上海新安纳电子科技有限公司 一种氧化硅介电材料用化学机械抛光液
JP6422325B2 (ja) * 2014-12-15 2018-11-14 花王株式会社 半導体基板用研磨液組成物
EP3344716A4 (en) * 2015-09-03 2019-04-10 Cabot Microelectronics Corporation METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE
JP6551136B2 (ja) * 2015-10-14 2019-07-31 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
CN109155246B (zh) * 2016-04-22 2024-01-05 日挥触媒化成株式会社 二氧化硅系复合微粒分散液及其制造方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
CN110922896A (zh) * 2019-11-18 2020-03-27 宁波日晟新材料有限公司 一种高效环保碳化硅抛光液及其制备方法和应用
CN117070148A (zh) * 2023-08-21 2023-11-17 河北工业大学 基于乙酸-乙酸铵缓冲液体系的高稳定性二氧化铈抛光液

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JPH10270401A (ja) * 1997-01-10 1998-10-09 Texas Instr Inc <Ti> 酸化物対窒化物高選択性スラリー
JPH1187505A (ja) * 1997-09-11 1999-03-30 Nec Corp 半導体装置の製造方法
JP2001068437A (ja) * 1999-08-26 2001-03-16 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2001200242A (ja) * 1999-12-08 2001-07-24 Eastman Kodak Co 水性スラリー
JP2002184728A (ja) * 2000-10-16 2002-06-28 Samsung Electronics Co Ltd ウェーハ研磨用スラリー及びこれを用いた化学的機械的研磨方法
JP2002261053A (ja) * 2000-12-20 2002-09-13 Bayer Ag ＳｉＯ２分離層の化学機械研磨用の酸性研磨スラリー
US20030073593A1 (en) * 2001-08-31 2003-04-17 Brigham Michael Todd Slurry for mechanical polishing (CMP) of metals and use thereof
WO2003060028A1 (en) * 2001-12-21 2003-07-24 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
WO2003072670A1 (en) * 2002-02-22 2003-09-04 University Of Florida Improved chemical-mechanical polishing slurry for polishing of copper or silver films
JP2003530713A (ja) * 2000-04-11 2003-10-14 キャボット マイクロエレクトロニクス コーポレイション 酸化ケイ素の優先除去系
JP2004064072A (ja) * 2002-07-16 2004-02-26 Hynix Semiconductor Inc 酸化膜用ｃｍｐスラリー組成物及びこれを利用した半導体素子の金属配線コンタクトプラグの形成方法

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Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270401A (ja) * 1997-01-10 1998-10-09 Texas Instr Inc <Ti> 酸化物対窒化物高選択性スラリー
JPH1187505A (ja) * 1997-09-11 1999-03-30 Nec Corp 半導体装置の製造方法
JP2001068437A (ja) * 1999-08-26 2001-03-16 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2001200242A (ja) * 1999-12-08 2001-07-24 Eastman Kodak Co 水性スラリー
JP2003530713A (ja) * 2000-04-11 2003-10-14 キャボット マイクロエレクトロニクス コーポレイション 酸化ケイ素の優先除去系
JP2002184728A (ja) * 2000-10-16 2002-06-28 Samsung Electronics Co Ltd ウェーハ研磨用スラリー及びこれを用いた化学的機械的研磨方法
JP2002261053A (ja) * 2000-12-20 2002-09-13 Bayer Ag ＳｉＯ２分離層の化学機械研磨用の酸性研磨スラリー
US20030073593A1 (en) * 2001-08-31 2003-04-17 Brigham Michael Todd Slurry for mechanical polishing (CMP) of metals and use thereof
WO2003060028A1 (en) * 2001-12-21 2003-07-24 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
WO2003072670A1 (en) * 2002-02-22 2003-09-04 University Of Florida Improved chemical-mechanical polishing slurry for polishing of copper or silver films
JP2004064072A (ja) * 2002-07-16 2004-02-26 Hynix Semiconductor Inc 酸化膜用ｃｍｐスラリー組成物及びこれを利用した半導体素子の金属配線コンタクトプラグの形成方法

Also Published As

Publication number Publication date
ATE537232T1 (de) 2011-12-15
TWI313031B (en) 2009-08-01
TW200605211A (en) 2006-02-01
CN101379154A (zh) 2009-03-04
IL179570A (en) 2013-02-28
US20090191710A1 (en) 2009-07-30
IL179570A0 (en) 2007-05-15
EP1797151B1 (en) 2011-12-14
JP2008503874A (ja) 2008-02-07
WO2006009640A1 (en) 2006-01-26
US20050279733A1 (en) 2005-12-22
EP1797151A1 (en) 2007-06-20
JP2012074736A (ja) 2012-04-12
CN101379154B (zh) 2011-07-13
JP5264985B2 (ja) 2013-08-14

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