JP4938654B2 - 改善された酸化物除去速度のためのcmp組成物 - Google Patents
改善された酸化物除去速度のためのcmp組成物 Download PDFInfo
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- JP4938654B2 JP4938654B2 JP2007516582A JP2007516582A JP4938654B2 JP 4938654 B2 JP4938654 B2 JP 4938654B2 JP 2007516582 A JP2007516582 A JP 2007516582A JP 2007516582 A JP2007516582 A JP 2007516582A JP 4938654 B2 JP4938654 B2 JP 4938654B2
- Authority
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- Japan
- Prior art keywords
- polishing
- polishing composition
- removal rate
- substrate
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Detergent Compositions (AREA)
Description
Li+、Na+、K+、Mg2+、Ca2+、Sr2+、Ba2+、Fe2+からなる群から選択される。最も好ましくは、ハロゲン化物塩はヨウ化カリウム(”KI”)である。ハロゲン化物塩はまたアンモニアハロゲン化物及びピリジニウムハロゲン化物であることが可能である。アンモニアハロゲン化物塩は好ましくはNH4Cl、NH4Br、及びNH4I、及びピリジニウムハロゲン化物塩は好ましくは C5H5NHCl、C5H5NHBr、及びC5H5NHIからなる群から選択される。
本例は様々の砥材について100%活性除去速度及び50%活性除去速度でKIを導入することの重大さを明らかにする。水と0.15質量%のセリア、1質量%のジルコニア(ZrO2)、3質量%の蒸気アルミナ、10質量%の蒸気シリカ、又は水中の10質量%のコロイドシリカのいずれかとを含む研磨組成物が正副二つ用意され、各正副の組成物の一つはKIも含んでいる。各研磨組成物は5のpHを有する。コロイドシリカは粒子サイズが10〜150nmの範囲で水中にあるシリカの安定な分散として供給されることに特徴づけられる。類似の二酸化珪素層が各々の異なる研磨組成物で別々に研磨された。研磨組成物の使用の後に、各研磨組成物による二酸化珪素(SiO2)の100%活性除去速度及び50%活性除去速度が測定され、表1に結果のデータを示している。
本例は、ブランケット除去速度及び50%活性除去速度に影響を与えることにおける、本発明の研磨組成物の中のハロゲン化物アニオンの重大さを示す。研磨組成物はセリア及び種々の塩(特に、0.5mMのKNO3、0.5mMのKCl、0.5mMのKI、0.25mMのK2C2O4、0.5mMのK2C2O4、2.0mMのKCl、及び0.5mMのK2SO4)を水中に含んで用意される。類似の二酸化珪素層が各々の異なる研磨組成物で別々に研磨された。研磨組成物の使用の後に、ブランケット除去速度及び50%活性除去速度が測定され、表2に結果のデータを示している。
Claims (7)
- 化学−機械研磨の方法であって:
(a)二酸化珪素を含む基材を研磨パッドおよび化学−機械研磨組成物と接触させ、
化学−機械研磨組成物が:
(i)0.01質量%〜1質量%のセリア、
(ii)I−、およびNa+、K+、及びNH4 +からなる群から選択したカチオンを含む0.05mM〜5mMのハロゲン化物塩、並びに
(iii )水、を含み、
ここで研磨組成物は9未満のpHを有すること、
(b)研磨パッドを基材と関連して動かし、それらの間には化学−機械研磨組成物を伴うこと、そして
(c)基材を研磨するために少なくとも基材の一部を磨り減らす(abrading)こと、を含んでなる方法。 - 化学−機械研磨組成物が3〜8のpHを有する、請求項1に記載された方法。
- ハロゲン化物塩がKIである、請求項1に記載された方法。
- さらに有機カルボン酸を含んでなる、請求項3に記載された方法。
- さらに有機カルボン酸を含んでなる、請求項1に記載された方法。
- 有機カルボン酸がモノカルボン酸及びジカルボン酸からなる群から選択される、請求項5に記載された方法。
- 有機カルボン酸がアミノカルボン酸である、請求項6に記載された方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/871,774 | 2004-06-18 | ||
US10/871,774 US20050279733A1 (en) | 2004-06-18 | 2004-06-18 | CMP composition for improved oxide removal rate |
PCT/US2005/020614 WO2006009640A1 (en) | 2004-06-18 | 2005-06-10 | Cmp composition for improved oxide removal rate |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011275846A Division JP5264985B2 (ja) | 2004-06-18 | 2011-12-16 | 改善された酸化物除去速度のためのcmp組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008503874A JP2008503874A (ja) | 2008-02-07 |
JP2008503874A5 JP2008503874A5 (ja) | 2008-07-10 |
JP4938654B2 true JP4938654B2 (ja) | 2012-05-23 |
Family
ID=34972454
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007516582A Expired - Fee Related JP4938654B2 (ja) | 2004-06-18 | 2005-06-10 | 改善された酸化物除去速度のためのcmp組成物 |
JP2011275846A Expired - Fee Related JP5264985B2 (ja) | 2004-06-18 | 2011-12-16 | 改善された酸化物除去速度のためのcmp組成物 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011275846A Expired - Fee Related JP5264985B2 (ja) | 2004-06-18 | 2011-12-16 | 改善された酸化物除去速度のためのcmp組成物 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20050279733A1 (ja) |
EP (1) | EP1797151B1 (ja) |
JP (2) | JP4938654B2 (ja) |
CN (1) | CN101379154B (ja) |
AT (1) | ATE537232T1 (ja) |
IL (1) | IL179570A (ja) |
TW (1) | TWI313031B (ja) |
WO (1) | WO2006009640A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8038752B2 (en) * | 2004-10-27 | 2011-10-18 | Cabot Microelectronics Corporation | Metal ion-containing CMP composition and method for using the same |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7803203B2 (en) * | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
CN102827549B (zh) * | 2012-09-04 | 2014-05-07 | 上海新安纳电子科技有限公司 | 一种氧化硅介电材料用化学机械抛光液 |
JP6422325B2 (ja) * | 2014-12-15 | 2018-11-14 | 花王株式会社 | 半導体基板用研磨液組成物 |
CN108026412B (zh) * | 2015-09-03 | 2021-08-31 | 嘉柏微电子材料股份公司 | 用于加工介电基板的方法及组合物 |
JP6551136B2 (ja) * | 2015-10-14 | 2019-07-31 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
EP3447790B1 (en) * | 2016-04-22 | 2023-05-24 | JGC Catalysts and Chemicals Ltd. | Silica-based composite fine particle dispersion and method for manufacturing same |
US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
CN110922896A (zh) * | 2019-11-18 | 2020-03-27 | 宁波日晟新材料有限公司 | 一种高效环保碳化硅抛光液及其制备方法和应用 |
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-
2004
- 2004-06-18 US US10/871,774 patent/US20050279733A1/en not_active Abandoned
-
2005
- 2005-06-10 AT AT05760474T patent/ATE537232T1/de active
- 2005-06-10 EP EP05760474A patent/EP1797151B1/en not_active Not-in-force
- 2005-06-10 JP JP2007516582A patent/JP4938654B2/ja not_active Expired - Fee Related
- 2005-06-10 CN CN2005800198416A patent/CN101379154B/zh not_active Expired - Fee Related
- 2005-06-10 WO PCT/US2005/020614 patent/WO2006009640A1/en active Application Filing
- 2005-06-17 TW TW094120097A patent/TWI313031B/zh not_active IP Right Cessation
-
2006
- 2006-11-23 IL IL179570A patent/IL179570A/en not_active IP Right Cessation
-
2009
- 2009-04-01 US US12/384,161 patent/US20090191710A1/en not_active Abandoned
-
2011
- 2011-12-16 JP JP2011275846A patent/JP5264985B2/ja not_active Expired - Fee Related
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JPH1187505A (ja) * | 1997-09-11 | 1999-03-30 | Nec Corp | 半導体装置の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
IL179570A (en) | 2013-02-28 |
CN101379154A (zh) | 2009-03-04 |
JP5264985B2 (ja) | 2013-08-14 |
TWI313031B (en) | 2009-08-01 |
WO2006009640A1 (en) | 2006-01-26 |
US20050279733A1 (en) | 2005-12-22 |
TW200605211A (en) | 2006-02-01 |
EP1797151B1 (en) | 2011-12-14 |
EP1797151A1 (en) | 2007-06-20 |
JP2008503874A (ja) | 2008-02-07 |
IL179570A0 (en) | 2007-05-15 |
JP2012074736A (ja) | 2012-04-12 |
US20090191710A1 (en) | 2009-07-30 |
ATE537232T1 (de) | 2011-12-15 |
CN101379154B (zh) | 2011-07-13 |
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