JP2008308401A - Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス - Google Patents

Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス Download PDF

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JP2008308401A
JP2008308401A JP2008129077A JP2008129077A JP2008308401A JP 2008308401 A JP2008308401 A JP 2008308401A JP 2008129077 A JP2008129077 A JP 2008129077A JP 2008129077 A JP2008129077 A JP 2008129077A JP 2008308401 A JP2008308401 A JP 2008308401A
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plane
group iii
iii nitride
nitride semiconductor
crystal
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JP2008308401A5 (enExample
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Takeshi Fujito
健史 藤戸
Kazumasa Kiyomi
和正 清見
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/274—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using seed materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Manufacturing & Machinery (AREA)
JP2008129077A 2007-05-17 2008-05-16 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス Withdrawn JP2008308401A (ja)

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JP2008129077A JP2008308401A (ja) 2007-05-17 2008-05-16 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス

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JP2010135667A Division JP4586936B2 (ja) 2007-05-17 2010-06-15 Ｉｉｉ族窒化物半導体結晶の製造方法

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WO2009119896A1 (ja) * 2008-03-28 2009-10-01 Ｊｆｅミネラル株式会社 AlNバルク単結晶及び半導体デバイス並びにAlN単結晶バルクの製造方法
WO2010113423A1 (ja) * 2009-04-03 2010-10-07 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
WO2012017723A1 (ja) * 2010-08-03 2012-02-09 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
WO2013147203A1 (ja) 2012-03-30 2013-10-03 三菱化学株式会社 周期表第１３族金属窒化物結晶及び周期表第１３族金属窒化物結晶の製造方法
JP2013209274A (ja) * 2012-03-30 2013-10-10 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物結晶
JP2013541491A (ja) * 2010-10-29 2013-11-14 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 相互に対して鋭角、直角、または鈍角を成す少なくとも２つの表面を有する種におけるｉｉｉ族窒化物結晶のアモノサーマル成長法
JP2014196204A (ja) * 2013-03-29 2014-10-16 三菱化学株式会社 周期表第１３族金属窒化物半導体結晶の製造方法
JP2015199631A (ja) * 2014-04-09 2015-11-12 古河機械金属株式会社 接合基板、接合基板の製造方法、及び、ｉｉｉ族窒化物半導体の製造方法
KR20160040566A (ko) * 2013-08-08 2016-04-14 미쓰비시 가가꾸 가부시키가이샤 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법
US11441237B2 (en) 2018-12-10 2022-09-13 Panasonic Intellectual Property Management Co., Ltd. RAMO4 substrate and method of manufacture thereof, and group III nitride semiconductor

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JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
WO2009110436A1 (ja) 2008-03-03 2009-09-11 三菱化学株式会社 窒化物半導体結晶とその製造方法
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
CN102067286B (zh) * 2009-03-06 2013-03-06 松下电器产业株式会社 氮化物半导体的晶体生长方法和半导体装置的制造方法
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
WO2012056928A1 (ja) * 2010-10-29 2012-05-03 株式会社トクヤマ 光学素子の製造方法
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
KR101877396B1 (ko) * 2011-09-07 2018-08-09 엘지이노텍 주식회사 발광소자
KR101433548B1 (ko) * 2011-09-12 2014-08-22 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
WO2013042297A1 (ja) * 2011-09-20 2013-03-28 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子及びそれを用いた光源装置
EP3656895A1 (en) * 2012-01-11 2020-05-27 Osaka University Method for producing group iii nitride crystals
JP6004550B2 (ja) * 2012-12-20 2016-10-12 日本碍子株式会社 種結晶基板、複合基板および機能素子
WO2014129544A1 (ja) 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
JP2015013791A (ja) * 2013-06-06 2015-01-22 三菱化学株式会社 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶
WO2014200001A1 (ja) * 2013-06-10 2014-12-18 株式会社トクヤマ アルミニウム系ｉｉｉ族窒化物単結晶の製造方法
EP3255181A4 (en) * 2015-02-06 2018-01-10 Mitsubishi Chemical Corporation GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
JP6135954B2 (ja) 2015-10-22 2017-05-31 ウシオ電機株式会社 窒化物半導体発光素子
JP6365992B2 (ja) * 2016-03-25 2018-08-01 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物結晶製造方法及びｒａｍｏ４基板
JP6861490B2 (ja) * 2016-09-07 2021-04-21 株式会社サイオクス 窒化物結晶基板の製造方法および結晶成長用基板
JP7046496B2 (ja) 2017-03-28 2022-04-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板、及び、バルク結晶
JP2019034883A (ja) * 2017-08-21 2019-03-07 株式会社Flosfia 結晶膜の製造方法
JP7228467B2 (ja) * 2019-05-27 2023-02-24 信越化学工業株式会社 Ｉｉｉ族化合物基板の製造方法及びｉｉｉ族化合物基板
WO2025191815A1 (ja) * 2024-03-14 2025-09-18 日本碍子株式会社 ＡｌＮ単結晶基板及びデバイス

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