KR101488545B1 - Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스 - Google Patents

Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스 Download PDF

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KR101488545B1
KR101488545B1 KR1020097026018A KR20097026018A KR101488545B1 KR 101488545 B1 KR101488545 B1 KR 101488545B1 KR 1020097026018 A KR1020097026018 A KR 1020097026018A KR 20097026018 A KR20097026018 A KR 20097026018A KR 101488545 B1 KR101488545 B1 KR 101488545B1
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plane
crystal
gan
nitride semiconductor
iii nitride
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KR20100017798A (ko
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겐지 후지토
가즈마사 기요미
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미쓰비시 가가꾸 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02609—Crystal orientation
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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    • H10H20/80—Constructional details
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    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020097026018A 2007-05-17 2008-05-16 Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스 Active KR101488545B1 (ko)

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JPJP-P-2007-131955 2007-05-17
JP2007131955 2007-05-17
PCT/JP2008/059018 WO2008143166A1 (ja) 2007-05-17 2008-05-16 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス

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KR101488545B1 true KR101488545B1 (ko) 2015-02-02

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US (3) US8269251B2 (enExample)
EP (1) EP2154272A4 (enExample)
JP (4) JP2008308401A (enExample)
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WO (1) WO2008143166A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
EP2261401A4 (en) * 2008-03-03 2012-11-28 Mitsubishi Chem Corp NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
JP5461859B2 (ja) * 2008-03-28 2014-04-02 Ｊｆｅミネラル株式会社 ＡｌＮバルク単結晶及び半導体デバイス並びにＡｌＮ単結晶バルクの製造方法
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US20110179993A1 (en) * 2009-03-06 2011-07-28 Akira Inoue Crystal growth process for nitride semiconductor, and method for manufacturing semiconductor device
US20120021549A1 (en) * 2009-04-03 2012-01-26 Panasonic Corporation Method for growing crystals of nitride semiconductor, and process for manufacture of semiconductor device
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5789929B2 (ja) * 2010-08-03 2015-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
EP2634294B1 (en) * 2010-10-29 2020-04-29 Tokuyama Corporation Method for manufacturing optical element and optical element multilayer body
WO2012058524A1 (en) * 2010-10-29 2012-05-03 The Regents Of The University Of California Ammonothermal growth of group-iii nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
KR101877396B1 (ko) * 2011-09-07 2018-08-09 엘지이노텍 주식회사 발광소자
KR20140048071A (ko) * 2011-09-12 2014-04-23 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
JPWO2013042297A1 (ja) * 2011-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 窒化ガリウム系化合物半導体発光素子及びそれを用いた光源装置
CN104040039B (zh) * 2012-01-11 2016-08-31 国立大学法人大阪大学 Iii族氮化物结晶的制造方法、iii族氮化物结晶及半导体装置
JP2013209274A (ja) * 2012-03-30 2013-10-10 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物結晶
KR102288547B1 (ko) 2012-03-30 2021-08-10 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 결정 및 주기표 제 13 족 금속 질화물 결정의 제조 방법
JP6004550B2 (ja) * 2012-12-20 2016-10-12 日本碍子株式会社 種結晶基板、複合基板および機能素子
WO2014129544A1 (ja) 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
JP6032099B2 (ja) * 2013-03-29 2016-11-24 三菱化学株式会社 周期表第１３族金属窒化物半導体結晶の製造方法
JP2015013791A (ja) * 2013-06-06 2015-01-22 三菱化学株式会社 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶
EP3010035B1 (en) * 2013-06-10 2022-12-21 Tokuyama Corporation Aluminium-based group iii nitride single crystal production method
KR102320083B1 (ko) * 2013-08-08 2021-11-02 미쯔비시 케미컬 주식회사 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법
JP2015199631A (ja) * 2014-04-09 2015-11-12 古河機械金属株式会社 接合基板、接合基板の製造方法、及び、ｉｉｉ族窒化物半導体の製造方法
EP3255181A4 (en) * 2015-02-06 2018-01-10 Mitsubishi Chemical Corporation GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
JP6135954B2 (ja) 2015-10-22 2017-05-31 ウシオ電機株式会社 窒化物半導体発光素子
JP6365992B2 (ja) * 2016-03-25 2018-08-01 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物結晶製造方法及びｒａｍｏ４基板
JP6861490B2 (ja) * 2016-09-07 2021-04-21 株式会社サイオクス 窒化物結晶基板の製造方法および結晶成長用基板
JP7046496B2 (ja) 2017-03-28 2022-04-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板、及び、バルク結晶
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
JP7182262B2 (ja) 2018-12-10 2022-12-02 パナソニックＩｐマネジメント株式会社 Ｒａｍｏ４基板およびその製造方法、ならびにｉｉｉ族窒化物半導体
JP7228467B2 (ja) * 2019-05-27 2023-02-24 信越化学工業株式会社 Ｉｉｉ族化合物基板の製造方法及びｉｉｉ族化合物基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029897A (ja) 2000-07-10 2002-01-29 Sumitomo Electric Ind Ltd 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2002169104A (ja) 2000-12-01 2002-06-14 Sumitomo Electric Ind Ltd 光デバイス
JP2004262755A (ja) 2000-08-24 2004-09-24 Nichia Chem Ind Ltd 窒化物半導体の成長方法と窒化物半導体基板
JP2005060227A (ja) 2004-09-30 2005-03-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及び半導体基板

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335750A (ja) 1997-06-03 1998-12-18 Sony Corp 半導体基板および半導体装置
JP3927218B2 (ja) 2000-09-18 2007-06-06 三菱電線工業株式会社 半導体基材
JP3556916B2 (ja) 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP2002293697A (ja) 2001-03-29 2002-10-09 Sumitomo Electric Ind Ltd ＧａＮエピタキシャル層の成長方法
JP3864870B2 (ja) 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP4573049B2 (ja) 2001-09-19 2010-11-04 住友電気工業株式会社 窒化ガリウム結晶、窒化ガリウム基板及び半導体レーザデバイス
US7303630B2 (en) * 2003-11-05 2007-12-04 Sumitomo Electric Industries, Ltd. Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
US20070280872A1 (en) 2001-09-19 2007-12-06 Sumitomo Electric Industries, Ltd. Method of growing gallium nitride crystal and gallium nitride substrate
US20080006201A1 (en) 2001-09-19 2008-01-10 Sumitomo Electric Industries, Ltd. Method of growing gallium nitride crystal
US7556687B2 (en) 2001-09-19 2009-07-07 Sumitomo Electric Industries, Ltd. Gallium nitride crystal substrate and method of producing same
IL161420A0 (en) * 2001-10-26 2004-09-27 Ammono Sp Zoo Substrate for epitaxy
WO2003043150A1 (en) 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
JP2003218043A (ja) 2002-01-28 2003-07-31 Nikko Materials Co Ltd ＧａＮ系化合物半導体結晶の製造方法
US7208393B2 (en) * 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
KR101363377B1 (ko) * 2002-04-15 2014-02-14 더 리전츠 오브 더 유니버시티 오브 캘리포니아 무극성 질화 갈륨 박막의 전위 감소
ATE457372T1 (de) 2002-12-11 2010-02-15 Ammono Sp Zoo Substrat für epitaxie und verfahren zu seiner herstellung
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
JP4340866B2 (ja) 2003-11-14 2009-10-07 日立電線株式会社 窒化物半導体基板及びその製造方法
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP4581490B2 (ja) * 2004-05-31 2010-11-17 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
JP2006016294A (ja) 2004-05-31 2006-01-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法、ｉｉｉ族窒化物結晶基板および半導体デバイス
US8398767B2 (en) * 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
JP4551203B2 (ja) 2004-12-08 2010-09-22 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4997744B2 (ja) * 2004-12-24 2012-08-08 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP4735949B2 (ja) 2005-04-08 2011-07-27 日立電線株式会社 Ｉｉｉ−ｖ族窒化物半導体結晶の製造方法およびｉｉｉ−ｖ族窒化物半導体基板の製造方法
JP4915128B2 (ja) 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法
TW200703463A (en) * 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
JP2007048869A (ja) 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
WO2007029655A1 (ja) * 2005-09-05 2007-03-15 Matsushita Electric Industrial Co., Ltd. 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法
EP1965416A3 (en) * 2005-12-22 2009-04-29 Freiberger Compound Materials GmbH Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth
JP2008285364A (ja) * 2007-05-17 2008-11-27 Sumitomo Electric Ind Ltd ＧａＮ基板、それを用いたエピタキシャル基板及び半導体発光素子
EP2261401A4 (en) 2008-03-03 2012-11-28 Mitsubishi Chem Corp NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
WO2010140564A1 (ja) 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002029897A (ja) 2000-07-10 2002-01-29 Sumitomo Electric Ind Ltd 単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2004262755A (ja) 2000-08-24 2004-09-24 Nichia Chem Ind Ltd 窒化物半導体の成長方法と窒化物半導体基板
JP2002169104A (ja) 2000-12-01 2002-06-14 Sumitomo Electric Ind Ltd 光デバイス
JP2005060227A (ja) 2004-09-30 2005-03-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及び半導体基板

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