JP2008277748A - レジストパターンの形成方法とその方法により製造した半導体デバイス - Google Patents

レジストパターンの形成方法とその方法により製造した半導体デバイス Download PDF

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Publication number
JP2008277748A
JP2008277748A JP2008021604A JP2008021604A JP2008277748A JP 2008277748 A JP2008277748 A JP 2008277748A JP 2008021604 A JP2008021604 A JP 2008021604A JP 2008021604 A JP2008021604 A JP 2008021604A JP 2008277748 A JP2008277748 A JP 2008277748A
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JP
Japan
Prior art keywords
water repellent
substrate
water
film
layer
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Pending
Application number
JP2008021604A
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English (en)
Japanese (ja)
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JP2008277748A5 (enrdf_load_stackoverflow
Inventor
Takeo Ishibashi
健夫 石橋
Mamoru Terai
護 寺井
Takuya Hagiwara
琢也 萩原
Atsumi Yamaguchi
敦美 山口
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Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2008021604A priority Critical patent/JP2008277748A/ja
Priority to US12/078,098 priority patent/US20080241489A1/en
Priority to TW097110930A priority patent/TW200845128A/zh
Priority to EP08005983A priority patent/EP1975719A3/en
Priority to KR1020080029334A priority patent/KR20080089296A/ko
Publication of JP2008277748A publication Critical patent/JP2008277748A/ja
Publication of JP2008277748A5 publication Critical patent/JP2008277748A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
JP2008021604A 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス Pending JP2008277748A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008021604A JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス
US12/078,098 US20080241489A1 (en) 2007-03-30 2008-03-27 Method of forming resist pattern and semiconductor device manufactured with the same
TW097110930A TW200845128A (en) 2007-03-30 2008-03-27 Method of forming resist pattern and semiconductor device manufactured with the same
EP08005983A EP1975719A3 (en) 2007-03-30 2008-03-28 Method of forming resist pattern and semiconductor device manufactured with the same
KR1020080029334A KR20080089296A (ko) 2007-03-30 2008-03-28 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007094042 2007-03-30
JP2008021604A JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス

Publications (2)

Publication Number Publication Date
JP2008277748A true JP2008277748A (ja) 2008-11-13
JP2008277748A5 JP2008277748A5 (enrdf_load_stackoverflow) 2011-02-03

Family

ID=39995700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008021604A Pending JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス

Country Status (4)

Country Link
JP (1) JP2008277748A (enrdf_load_stackoverflow)
KR (1) KR20080089296A (enrdf_load_stackoverflow)
CN (1) CN101276158A (enrdf_load_stackoverflow)
TW (1) TW200845128A (enrdf_load_stackoverflow)

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JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
WO2010123001A1 (ja) * 2009-04-24 2010-10-28 セントラル硝子株式会社 シリコンウェハ用洗浄剤
JP2011009537A (ja) * 2009-06-26 2011-01-13 Tokyo Electron Ltd 液処理装置、液処理方法および記憶媒体
JP2011129585A (ja) * 2009-12-15 2011-06-30 Toshiba Corp 半導体基板の表面処理装置及び方法
JP2011233758A (ja) * 2010-04-28 2011-11-17 Tokyo Electron Ltd 基板処理方法
WO2011145500A1 (ja) * 2010-05-19 2011-11-24 セントラル硝子株式会社 保護膜形成用薬液
WO2011155407A1 (ja) * 2010-06-07 2011-12-15 セントラル硝子株式会社 保護膜形成用薬液
WO2012002243A1 (ja) * 2010-06-28 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成剤、撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
WO2012002145A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成用薬液
WO2012002200A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 ウェハの洗浄方法
JP2012033881A (ja) * 2010-06-28 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP2012044065A (ja) * 2010-08-20 2012-03-01 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
KR20120074197A (ko) * 2010-12-27 2012-07-05 도쿄엘렉트론가부시키가이샤 기판 액처리 장치 및 기판 액처리 방법 및 기판 액처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
JP2012178432A (ja) * 2011-02-25 2012-09-13 Central Glass Co Ltd 撥水性保護膜形成薬液
JP2012178431A (ja) * 2011-02-25 2012-09-13 Central Glass Co Ltd ウェハの洗浄方法
JP2013108044A (ja) * 2011-10-28 2013-06-06 Central Glass Co Ltd 保護膜形成用薬液の調製方法
WO2013115021A1 (ja) * 2012-02-01 2013-08-08 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
KR101396271B1 (ko) * 2010-06-30 2014-05-16 샌트랄 글래스 컴퍼니 리미티드 웨이퍼의 세정방법
US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
JP2015079992A (ja) * 2014-12-22 2015-04-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
KR101572583B1 (ko) * 2010-06-28 2015-11-30 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액과 당해 약액을 이용한 웨이퍼의 세정 방법
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
JP2016187037A (ja) * 2011-10-28 2016-10-27 セントラル硝子株式会社 保護膜形成用薬液の調製方法
US9711344B2 (en) 2015-02-24 2017-07-18 Renesas Electronics Corporation Semiconductor device manufacturing method using a multilayer resist
WO2020105340A1 (ja) * 2018-11-22 2020-05-28 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
CN111630634A (zh) * 2018-01-30 2020-09-04 株式会社斯库林集团 处理液吐出配管以及基板处理装置
CN113823549A (zh) * 2020-06-19 2021-12-21 中国科学院微电子研究所 半导体结构的制造方法
CN115699259A (zh) * 2020-05-21 2023-02-03 中央硝子株式会社 半导体基板的表面处理方法及表面处理剂组合物
CN118483879A (zh) * 2024-06-03 2024-08-13 浙江大学 基于有机介质的ic光刻设备浸没边界流场收束及撤除方法

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JP2013118347A (ja) * 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
JP5611884B2 (ja) * 2011-04-14 2014-10-22 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
JP5816488B2 (ja) * 2011-08-26 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20150006836A (ko) * 2012-04-19 2015-01-19 키모토 컴파니 리미티드 유리 마스크용 열경화형 보호액 및 유리 마스크
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
CN103293859A (zh) * 2013-05-27 2013-09-11 苏州扬清芯片科技有限公司 光刻胶薄膜的制作方法
SG11201703607RA (en) * 2014-11-19 2017-06-29 Nissan Chemical Ind Ltd Composition for forming silicon-containing resist underlayer film removable by wet process
JP6916731B2 (ja) * 2017-12-28 2021-08-11 東京応化工業株式会社 基板の撥水化方法、表面処理剤、及び基板表面を洗浄液により洗浄する際の有機パターン又は無機パターンの倒れを抑制する方法
JP6730417B2 (ja) * 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
KR102404100B1 (ko) * 2018-02-13 2022-05-31 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액, 및 웨이퍼의 표면 처리 방법
CN112889003A (zh) * 2018-10-01 2021-06-01 Asml荷兰有限公司 光刻设备中的物体
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体

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JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
US8394572B2 (en) 2007-11-06 2013-03-12 Asml Netherlands B.V. Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus
US8114568B2 (en) 2007-11-06 2012-02-14 Amsl Netherlands B.V. Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
US9281178B2 (en) 2008-12-26 2016-03-08 Central Glass Company, Limited Cleaning agent for silicon wafer
WO2010123001A1 (ja) * 2009-04-24 2010-10-28 セントラル硝子株式会社 シリコンウェハ用洗浄剤
JP2010272852A (ja) * 2009-04-24 2010-12-02 Central Glass Co Ltd シリコンウェハ用洗浄剤
JP2011009537A (ja) * 2009-06-26 2011-01-13 Tokyo Electron Ltd 液処理装置、液処理方法および記憶媒体
KR101421494B1 (ko) 2009-06-26 2014-07-22 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체
US8617656B2 (en) 2009-06-26 2013-12-31 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and storage medium
JP2011129585A (ja) * 2009-12-15 2011-06-30 Toshiba Corp 半導体基板の表面処理装置及び方法
JP2011233758A (ja) * 2010-04-28 2011-11-17 Tokyo Electron Ltd 基板処理方法
US9691603B2 (en) 2010-05-19 2017-06-27 Central Glass Company, Limited Chemical for forming protective film
WO2011145500A1 (ja) * 2010-05-19 2011-11-24 セントラル硝子株式会社 保護膜形成用薬液
KR101483484B1 (ko) 2010-05-19 2015-01-16 샌트랄 글래스 컴퍼니 리미티드 보호막 형성용 약액
JP2012033873A (ja) * 2010-05-19 2012-02-16 Central Glass Co Ltd 保護膜形成用薬液
JP2016036038A (ja) * 2010-06-07 2016-03-17 セントラル硝子株式会社 保護膜形成用薬液
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US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
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JPWO2011155407A1 (ja) * 2010-06-07 2013-08-01 セントラル硝子株式会社 保護膜形成用薬液
JP2012033881A (ja) * 2010-06-28 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
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US9090782B2 (en) 2010-06-30 2015-07-28 Central Glass Company, Limited Liquid chemical for forming water repellent protective film
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JP2012033880A (ja) * 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
WO2012002200A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 ウェハの洗浄方法
US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
JP2012044065A (ja) * 2010-08-20 2012-03-01 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
US9005703B2 (en) 2010-08-20 2015-04-14 SCREEN Holdings Co., Ltd. Substrate processing method
US9455134B2 (en) 2010-08-20 2016-09-27 SCREEN Holdings Co., Ltd. Substrate processing method
JP2012138482A (ja) * 2010-12-27 2012-07-19 Tokyo Electron Ltd 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
KR101583103B1 (ko) 2010-12-27 2016-01-07 도쿄엘렉트론가부시키가이샤 기판 액처리 장치 및 기판 액처리 방법 및 기판 액처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
KR20120074197A (ko) * 2010-12-27 2012-07-05 도쿄엘렉트론가부시키가이샤 기판 액처리 장치 및 기판 액처리 방법 및 기판 액처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
JP2012178431A (ja) * 2011-02-25 2012-09-13 Central Glass Co Ltd ウェハの洗浄方法
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