TW200845128A - Method of forming resist pattern and semiconductor device manufactured with the same - Google Patents
Method of forming resist pattern and semiconductor device manufactured with the same Download PDFInfo
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- TW200845128A TW200845128A TW097110930A TW97110930A TW200845128A TW 200845128 A TW200845128 A TW 200845128A TW 097110930 A TW097110930 A TW 097110930A TW 97110930 A TW97110930 A TW 97110930A TW 200845128 A TW200845128 A TW 200845128A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 179
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 151
- 239000005871 repellent Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 239000002904 solvent Substances 0.000 claims abstract description 56
- 238000007654 immersion Methods 0.000 claims abstract description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 208
- 238000011282 treatment Methods 0.000 claims description 161
- 230000004888 barrier function Effects 0.000 claims description 130
- 230000002093 peripheral effect Effects 0.000 claims description 46
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 40
- 230000000887 hydrating effect Effects 0.000 claims description 33
- 239000007822 coupling agent Substances 0.000 claims description 27
- 230000002940 repellent Effects 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 21
- 238000004528 spin coating Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 239000006193 liquid solution Substances 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000002168 alkylating agent Substances 0.000 claims description 3
- 229940100198 alkylating agent Drugs 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000010933 acylation Effects 0.000 claims 1
- 238000005917 acylation reaction Methods 0.000 claims 1
- 229920001021 polysulfide Polymers 0.000 claims 1
- 239000005077 polysulfide Substances 0.000 claims 1
- 150000008117 polysulfides Polymers 0.000 claims 1
- 238000006884 silylation reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 181
- 235000012431 wafers Nutrition 0.000 description 98
- 239000000243 solution Substances 0.000 description 31
- 238000004140 cleaning Methods 0.000 description 30
- -1 bis (trimethyl fluorenyl) trifluoroacetamide Chemical compound 0.000 description 25
- 230000000694 effects Effects 0.000 description 21
- 230000036571 hydration Effects 0.000 description 18
- 238000006703 hydration reaction Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 17
- 238000002156 mixing Methods 0.000 description 17
- 238000005728 strengthening Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000012754 barrier agent Substances 0.000 description 12
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000004575 stone Substances 0.000 description 11
- 238000011161 development Methods 0.000 description 10
- 230000018109 developmental process Effects 0.000 description 10
- 239000003814 drug Substances 0.000 description 10
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- 230000007261 regionalization Effects 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 230000007062 hydrolysis Effects 0.000 description 8
- 238000006460 hydrolysis reaction Methods 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 7
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- AQZGPSLYZOOYQP-UHFFFAOYSA-N Diisoamyl ether Chemical compound CC(C)CCOCCC(C)C AQZGPSLYZOOYQP-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 239000002250 absorbent Substances 0.000 description 6
- 230000002745 absorbent Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 5
- 238000004821 distillation Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229940079593 drug Drugs 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 3
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 3
- 241000283070 Equus zebra Species 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920002098 polyfluorene Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- AHTUYKGYPOZJNM-UHFFFAOYSA-N 1,1,1-trifluoro-7-(trimethoxymethyl)pentadecane Chemical compound FC(CCCCCC(C(OC)(OC)OC)CCCCCCCC)(F)F AHTUYKGYPOZJNM-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- NHXCUKIHMLHWQT-UHFFFAOYSA-N 1-propoxydecane Chemical compound CCCCCCCCCCOCCC NHXCUKIHMLHWQT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VPLKXGORNUYFBO-UHFFFAOYSA-N C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC VPLKXGORNUYFBO-UHFFFAOYSA-N 0.000 description 2
- DQSNLLQGSBUXKJ-UHFFFAOYSA-N CO[S] Chemical compound CO[S] DQSNLLQGSBUXKJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- XCOBLONWWXQEBS-KPKJPENVSA-N N,O-bis(trimethylsilyl)trifluoroacetamide Chemical compound C[Si](C)(C)O\C(C(F)(F)F)=N\[Si](C)(C)C XCOBLONWWXQEBS-KPKJPENVSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- UFFSXJKVKBQEHC-UHFFFAOYSA-N heptafluorobutyric anhydride Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(=O)OC(=O)C(F)(F)C(F)(F)C(F)(F)F UFFSXJKVKBQEHC-UHFFFAOYSA-N 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000006384 oligomerization reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 125000005504 styryl group Chemical group 0.000 description 2
- 229910021653 sulphate ion Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- ZYSDERHSJJEJDS-UHFFFAOYSA-M tetrakis-decylazanium;hydroxide Chemical compound [OH-].CCCCCCCCCC[N+](CCCCCCCCCC)(CCCCCCCCCC)CCCCCCCCCC ZYSDERHSJJEJDS-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 239000005051 trimethylchlorosilane Substances 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- JWZZKOKVBUJMES-UHFFFAOYSA-N (+-)-Isoprenaline Chemical compound CC(C)NCC(O)C1=CC=C(O)C(O)=C1 JWZZKOKVBUJMES-UHFFFAOYSA-N 0.000 description 1
- CDOTUFDBMWZKEV-UHFFFAOYSA-N (silylamino)silylethane Chemical compound CC[SiH2]N[SiH3] CDOTUFDBMWZKEV-UHFFFAOYSA-N 0.000 description 1
- DQGPWNBGAYGUPK-UHFFFAOYSA-N 1,1,1-trifluoro-4-(trimethoxymethyl)dodecane Chemical compound FC(CCC(C(OC)(OC)OC)CCCCCCCC)(F)F DQGPWNBGAYGUPK-UHFFFAOYSA-N 0.000 description 1
- CWZQYRJRRHYJOI-UHFFFAOYSA-N 1,1,1-trimethoxydecane Chemical compound CCCCCCCCCC(OC)(OC)OC CWZQYRJRRHYJOI-UHFFFAOYSA-N 0.000 description 1
- POEDHWVTLBLWDA-UHFFFAOYSA-N 1-butylindole-2,3-dione Chemical compound C1=CC=C2N(CCCC)C(=O)C(=O)C2=C1 POEDHWVTLBLWDA-UHFFFAOYSA-N 0.000 description 1
- LOLANUHFGPZTLQ-UHFFFAOYSA-N 1-ethoxydecane Chemical group CCCCCCCCCCOCC LOLANUHFGPZTLQ-UHFFFAOYSA-N 0.000 description 1
- JPEWDCTZJFUITH-UHFFFAOYSA-N 1-methoxydecane Chemical class CCCCCCCCCCOC JPEWDCTZJFUITH-UHFFFAOYSA-N 0.000 description 1
- NRKYWOKHZRQRJR-UHFFFAOYSA-N 2,2,2-trifluoroacetamide Chemical compound NC(=O)C(F)(F)F NRKYWOKHZRQRJR-UHFFFAOYSA-N 0.000 description 1
- XETRHNFRKCNWAJ-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanoyl 2,2,3,3,3-pentafluoropropanoate Chemical compound FC(F)(F)C(F)(F)C(=O)OC(=O)C(F)(F)C(F)(F)F XETRHNFRKCNWAJ-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- ZFGLJXRCMAFBDA-UHFFFAOYSA-N 2-oxo-2-propylperoxyacetic acid Chemical compound CCCOOC(=O)C(O)=O ZFGLJXRCMAFBDA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- LGAZYAVUSJAOSN-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OC)(OC)OC)(CCCCCCCC)C Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)(CCCCCCCC)C LGAZYAVUSJAOSN-UHFFFAOYSA-N 0.000 description 1
- ALLLASYBHFIYEE-UHFFFAOYSA-N C(C1CO1)OCCCS(OCC)(OCC)C Chemical compound C(C1CO1)OCCCS(OCC)(OCC)C ALLLASYBHFIYEE-UHFFFAOYSA-N 0.000 description 1
- NOAFBJDJFFVENS-UHFFFAOYSA-N C(C1CO1)OCCCS(OCC)(OCC)OCC Chemical compound C(C1CO1)OCCCS(OCC)(OCC)OCC NOAFBJDJFFVENS-UHFFFAOYSA-N 0.000 description 1
- JHCMSQMKPPZHPI-UHFFFAOYSA-N C(CCCCCCCCC)C(CCCCCCCCC)(OC)OC Chemical compound C(CCCCCCCCC)C(CCCCCCCCC)(OC)OC JHCMSQMKPPZHPI-UHFFFAOYSA-N 0.000 description 1
- MWGFSMCDBAKEST-UHFFFAOYSA-N CC(CCCCCCCCC)(NCCCCCCCCCC)C Chemical compound CC(CCCCCCCCC)(NCCCCCCCCCC)C MWGFSMCDBAKEST-UHFFFAOYSA-N 0.000 description 1
- CJHDRZXLTKHPKM-UHFFFAOYSA-N CCOS(CCCNC(=O)N)(OCC)OCC Chemical compound CCOS(CCCNC(=O)N)(OCC)OCC CJHDRZXLTKHPKM-UHFFFAOYSA-N 0.000 description 1
- IOZSQFBVTTVBDP-UHFFFAOYSA-N CO[S](CCCN)(CCN)(OC)OC Chemical compound CO[S](CCCN)(CCN)(OC)OC IOZSQFBVTTVBDP-UHFFFAOYSA-N 0.000 description 1
- 229910020587 CmF2m+1 Inorganic materials 0.000 description 1
- 206010021703 Indifference Diseases 0.000 description 1
- MSPCIZMDDUQPGJ-UHFFFAOYSA-N N-methyl-N-(trimethylsilyl)trifluoroacetamide Chemical compound C[Si](C)(C)N(C)C(=O)C(F)(F)F MSPCIZMDDUQPGJ-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- RIBBZUAGJAUAPM-UHFFFAOYSA-K bismuth;prop-2-enoate Chemical compound [Bi+3].[O-]C(=O)C=C.[O-]C(=O)C=C.[O-]C(=O)C=C RIBBZUAGJAUAPM-UHFFFAOYSA-K 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical group CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- XKLVLDXNZDIDKQ-UHFFFAOYSA-N butylhydrazine Chemical compound CCCCNN XKLVLDXNZDIDKQ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000006612 decyloxy group Chemical group 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- 229960004042 diazoxide Drugs 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- IFRHWWBZUWDFBK-UHFFFAOYSA-N dimethoxy sulfate Chemical compound COOS(=O)(=O)OOC IFRHWWBZUWDFBK-UHFFFAOYSA-N 0.000 description 1
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000002140 halogenating effect Effects 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229930003658 monoterpene Natural products 0.000 description 1
- 150000002773 monoterpene derivatives Chemical class 0.000 description 1
- 235000002577 monoterpenes Nutrition 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- XDEPVFFKOVDUNO-UHFFFAOYSA-N pentafluorobenzyl bromide Chemical compound FC1=C(F)C(F)=C(CBr)C(F)=C1F XDEPVFFKOVDUNO-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- RLUCXJBHKHIDSP-UHFFFAOYSA-N propane-1,2-diol;propanoic acid Chemical compound CCC(O)=O.CC(O)CO RLUCXJBHKHIDSP-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003307 slaughter Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000006188 syrup Substances 0.000 description 1
- 235000020357 syrup Nutrition 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BXYHVFRRNNWPMB-UHFFFAOYSA-N tetramethylphosphanium Chemical compound C[P+](C)(C)C BXYHVFRRNNWPMB-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- CSRZQMIRAZTJOY-UHFFFAOYSA-N trimethylsilyl iodide Substances C[Si](C)(C)I CSRZQMIRAZTJOY-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
- 239000010803 wood ash Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007094042 | 2007-03-30 | ||
| JP2008021604A JP2008277748A (ja) | 2007-03-30 | 2008-01-31 | レジストパターンの形成方法とその方法により製造した半導体デバイス |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200845128A true TW200845128A (en) | 2008-11-16 |
Family
ID=39995700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097110930A TW200845128A (en) | 2007-03-30 | 2008-03-27 | Method of forming resist pattern and semiconductor device manufactured with the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2008277748A (enrdf_load_stackoverflow) |
| KR (1) | KR20080089296A (enrdf_load_stackoverflow) |
| CN (1) | CN101276158A (enrdf_load_stackoverflow) |
| TW (1) | TW200845128A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI460263B (zh) * | 2010-05-19 | 2014-11-11 | Central Glass Co Ltd | Protective film forming liquid |
| TWI484578B (zh) * | 2010-12-27 | 2015-05-11 | Tokyo Electron Ltd | A substrate liquid processing apparatus and a substrate liquid processing method, and a computer-readable recording medium on which a substrate liquid processing program is recorded |
| TWI566272B (zh) * | 2011-08-26 | 2017-01-11 | 瑞薩電子股份有限公司 | 半導體裝置之製造方法 |
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| JP2009117832A (ja) * | 2007-11-06 | 2009-05-28 | Asml Netherlands Bv | リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置 |
| JP2010135428A (ja) * | 2008-12-02 | 2010-06-17 | Toshiba Corp | 基板保持部材及び半導体装置の製造方法 |
| US9053924B2 (en) | 2008-12-26 | 2015-06-09 | Central Glass Company, Limited | Cleaning agent for silicon wafer |
| JP5533178B2 (ja) * | 2009-04-24 | 2014-06-25 | セントラル硝子株式会社 | シリコンウェハ用洗浄剤 |
| JP5242508B2 (ja) | 2009-06-26 | 2013-07-24 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
| KR20110018030A (ko) * | 2009-08-17 | 2011-02-23 | 주식회사 동진쎄미켐 | 잉크조성물 |
| JP5404364B2 (ja) * | 2009-12-15 | 2014-01-29 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
| JP5501085B2 (ja) * | 2010-04-28 | 2014-05-21 | 東京エレクトロン株式会社 | 基板処理方法 |
| US9228120B2 (en) | 2010-06-07 | 2016-01-05 | Central Glass Company, Limited | Liquid chemical for forming protecting film |
| WO2011155407A1 (ja) * | 2010-06-07 | 2011-12-15 | セントラル硝子株式会社 | 保護膜形成用薬液 |
| WO2012002243A1 (ja) * | 2010-06-28 | 2012-01-05 | セントラル硝子株式会社 | 撥水性保護膜形成剤、撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法 |
| KR20130046431A (ko) * | 2010-06-28 | 2013-05-07 | 샌트랄 글래스 컴퍼니 리미티드 | 발수성 보호막 형성제, 발수성 보호막 형성용 약액과 당해 약액을 이용한 웨이퍼의 세정 방법 |
| JP5712670B2 (ja) * | 2011-02-25 | 2015-05-07 | セントラル硝子株式会社 | 撥水性保護膜形成薬液 |
| JP5716527B2 (ja) * | 2010-06-28 | 2015-05-13 | セントラル硝子株式会社 | 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法 |
| JP2012033880A (ja) | 2010-06-30 | 2012-02-16 | Central Glass Co Ltd | 撥水性保護膜形成用薬液 |
| JP5678720B2 (ja) * | 2011-02-25 | 2015-03-04 | セントラル硝子株式会社 | ウェハの洗浄方法 |
| KR101396271B1 (ko) * | 2010-06-30 | 2014-05-16 | 샌트랄 글래스 컴퍼니 리미티드 | 웨이퍼의 세정방법 |
| WO2012002200A1 (ja) * | 2010-06-30 | 2012-01-05 | セントラル硝子株式会社 | ウェハの洗浄方法 |
| KR101266620B1 (ko) | 2010-08-20 | 2013-05-22 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리방법 및 기판처리장치 |
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| JP2013118347A (ja) * | 2010-12-28 | 2013-06-13 | Central Glass Co Ltd | ウェハの洗浄方法 |
| JP5611884B2 (ja) * | 2011-04-14 | 2014-10-22 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
| JP6213616B2 (ja) * | 2011-10-28 | 2017-10-18 | セントラル硝子株式会社 | 保護膜形成用薬液の調製方法 |
| JP5953721B2 (ja) * | 2011-10-28 | 2016-07-20 | セントラル硝子株式会社 | 保護膜形成用薬液の調製方法 |
| WO2013115021A1 (ja) * | 2012-02-01 | 2013-08-08 | セントラル硝子株式会社 | 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法 |
| KR20150006836A (ko) * | 2012-04-19 | 2015-01-19 | 키모토 컴파니 리미티드 | 유리 마스크용 열경화형 보호액 및 유리 마스크 |
| JP5728517B2 (ja) * | 2013-04-02 | 2015-06-03 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法 |
| CN103293859A (zh) * | 2013-05-27 | 2013-09-11 | 苏州扬清芯片科技有限公司 | 光刻胶薄膜的制作方法 |
| SG11201703607RA (en) * | 2014-11-19 | 2017-06-29 | Nissan Chemical Ind Ltd | Composition for forming silicon-containing resist underlayer film removable by wet process |
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| JP6730417B2 (ja) * | 2017-12-31 | 2020-07-29 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジスト組成物および方法 |
| JP7000177B2 (ja) * | 2018-01-30 | 2022-01-19 | 株式会社Ｓｃｒｅｅｎホールディングス | 処理液吐出配管および基板処理装置 |
| KR102404100B1 (ko) * | 2018-02-13 | 2022-05-31 | 샌트랄 글래스 컴퍼니 리미티드 | 발수성 보호막 형성제, 발수성 보호막 형성용 약액, 및 웨이퍼의 표면 처리 방법 |
| CN112889003A (zh) * | 2018-10-01 | 2021-06-01 | Asml荷兰有限公司 | 光刻设备中的物体 |
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| CN115699259A (zh) * | 2020-05-21 | 2023-02-03 | 中央硝子株式会社 | 半导体基板的表面处理方法及表面处理剂组合物 |
| CN113823549B (zh) * | 2020-06-19 | 2025-01-21 | 中国科学院微电子研究所 | 半导体结构的制造方法 |
| CN118483879B (zh) * | 2024-06-03 | 2025-03-14 | 浙江大学 | 基于有机介质的ic光刻设备浸没边界流场收束及撤除方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005118660A (ja) * | 2003-10-16 | 2005-05-12 | Seiko Epson Corp | 撥液領域の形成方法およびパターン形成方法並びに電子デバイス |
| JP4194495B2 (ja) * | 2004-01-07 | 2008-12-10 | 東京エレクトロン株式会社 | 塗布・現像装置 |
| JP2007258217A (ja) * | 2006-03-20 | 2007-10-04 | Toppan Printing Co Ltd | 印刷方法 |
| JP2008235542A (ja) * | 2007-03-20 | 2008-10-02 | Dainippon Printing Co Ltd | 液浸リソグラフィ用ウェハおよびその製造方法 |
-
2008
- 2008-01-31 JP JP2008021604A patent/JP2008277748A/ja active Pending
- 2008-03-27 TW TW097110930A patent/TW200845128A/zh unknown
- 2008-03-28 KR KR1020080029334A patent/KR20080089296A/ko not_active Withdrawn
- 2008-03-28 CN CNA2008100885739A patent/CN101276158A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI460263B (zh) * | 2010-05-19 | 2014-11-11 | Central Glass Co Ltd | Protective film forming liquid |
| TWI484578B (zh) * | 2010-12-27 | 2015-05-11 | Tokyo Electron Ltd | A substrate liquid processing apparatus and a substrate liquid processing method, and a computer-readable recording medium on which a substrate liquid processing program is recorded |
| TWI566272B (zh) * | 2011-08-26 | 2017-01-11 | 瑞薩電子股份有限公司 | 半導體裝置之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008277748A (ja) | 2008-11-13 |
| KR20080089296A (ko) | 2008-10-06 |
| CN101276158A (zh) | 2008-10-01 |
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