KR20080089296A - 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스 - Google Patents

레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스 Download PDF

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Publication number
KR20080089296A
KR20080089296A KR1020080029334A KR20080029334A KR20080089296A KR 20080089296 A KR20080089296 A KR 20080089296A KR 1020080029334 A KR1020080029334 A KR 1020080029334A KR 20080029334 A KR20080029334 A KR 20080029334A KR 20080089296 A KR20080089296 A KR 20080089296A
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South Korea
Prior art keywords
water repellent
substrate
film
water
layer
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KR1020080029334A
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English (en)
Korean (ko)
Inventor
다께오 이시바시
마모루 데라이
다꾸야 하기와라
아쯔미 야마구찌
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가부시끼가이샤 르네사스 테크놀로지
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Publication of KR20080089296A publication Critical patent/KR20080089296A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020080029334A 2007-03-30 2008-03-28 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스 Withdrawn KR20080089296A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00094042 2007-03-30
JP2007094042 2007-03-30
JP2008021604A JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス
JPJP-P-2008-00021604 2008-01-31

Publications (1)

Publication Number Publication Date
KR20080089296A true KR20080089296A (ko) 2008-10-06

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KR1020080029334A Withdrawn KR20080089296A (ko) 2007-03-30 2008-03-28 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스

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JP (1) JP2008277748A (enrdf_load_stackoverflow)
KR (1) KR20080089296A (enrdf_load_stackoverflow)
CN (1) CN101276158A (enrdf_load_stackoverflow)
TW (1) TW200845128A (enrdf_load_stackoverflow)

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KR101425543B1 (ko) * 2010-06-30 2014-08-01 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성용 약액 및 이를 사용하는 웨이퍼의 세정 방법
KR101483484B1 (ko) * 2010-05-19 2015-01-16 샌트랄 글래스 컴퍼니 리미티드 보호막 형성용 약액
KR101523348B1 (ko) * 2011-04-14 2015-05-27 도쿄엘렉트론가부시키가이샤 에칭 방법, 에칭 장치 및 기억 매체
KR20190080773A (ko) * 2017-12-28 2019-07-08 도오꾜오까고오교 가부시끼가이샤 기판의 발수화 방법, 표면 처리제, 및 기판 표면을 세정액에 의해 세정할 때의 유기 패턴 또는 무기 패턴의 무너짐을 억제하는 방법

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JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
JP5533178B2 (ja) * 2009-04-24 2014-06-25 セントラル硝子株式会社 シリコンウェハ用洗浄剤
JP5242508B2 (ja) 2009-06-26 2013-07-24 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
KR20110018030A (ko) * 2009-08-17 2011-02-23 주식회사 동진쎄미켐 잉크조성물
JP5404364B2 (ja) * 2009-12-15 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5501085B2 (ja) * 2010-04-28 2014-05-21 東京エレクトロン株式会社 基板処理方法
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
WO2011155407A1 (ja) * 2010-06-07 2011-12-15 セントラル硝子株式会社 保護膜形成用薬液
WO2012002243A1 (ja) * 2010-06-28 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成剤、撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
KR20130046431A (ko) * 2010-06-28 2013-05-07 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액과 당해 약액을 이용한 웨이퍼의 세정 방법
JP5712670B2 (ja) * 2011-02-25 2015-05-07 セントラル硝子株式会社 撥水性保護膜形成薬液
JP5716527B2 (ja) * 2010-06-28 2015-05-13 セントラル硝子株式会社 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP5678720B2 (ja) * 2011-02-25 2015-03-04 セントラル硝子株式会社 ウェハの洗浄方法
KR101396271B1 (ko) * 2010-06-30 2014-05-16 샌트랄 글래스 컴퍼니 리미티드 웨이퍼의 세정방법
WO2012002200A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 ウェハの洗浄方法
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP5662081B2 (ja) * 2010-08-20 2015-01-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5320383B2 (ja) * 2010-12-27 2013-10-23 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP2013118347A (ja) * 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
JP5816488B2 (ja) * 2011-08-26 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6213616B2 (ja) * 2011-10-28 2017-10-18 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP5953721B2 (ja) * 2011-10-28 2016-07-20 セントラル硝子株式会社 保護膜形成用薬液の調製方法
WO2013115021A1 (ja) * 2012-02-01 2013-08-08 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
KR20150006836A (ko) * 2012-04-19 2015-01-19 키모토 컴파니 리미티드 유리 마스크용 열경화형 보호액 및 유리 마스크
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
CN103293859A (zh) * 2013-05-27 2013-09-11 苏州扬清芯片科技有限公司 光刻胶薄膜的制作方法
SG11201703607RA (en) * 2014-11-19 2017-06-29 Nissan Chemical Ind Ltd Composition for forming silicon-containing resist underlayer film removable by wet process
JP6118309B2 (ja) * 2014-12-22 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2016157779A (ja) 2015-02-24 2016-09-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6730417B2 (ja) * 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
JP7000177B2 (ja) * 2018-01-30 2022-01-19 株式会社Ｓｃｒｅｅｎホールディングス 処理液吐出配管および基板処理装置
KR102404100B1 (ko) * 2018-02-13 2022-05-31 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액, 및 웨이퍼의 표면 처리 방법
CN112889003A (zh) * 2018-10-01 2021-06-01 Asml荷兰有限公司 光刻设备中的物体
SG11202105360UA (en) * 2018-11-22 2021-06-29 Central Glass Co Ltd Bevel portion treatment agent composition and method of manufacturing wafer
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体
CN115699259A (zh) * 2020-05-21 2023-02-03 中央硝子株式会社 半导体基板的表面处理方法及表面处理剂组合物
CN113823549B (zh) * 2020-06-19 2025-01-21 中国科学院微电子研究所 半导体结构的制造方法
CN118483879B (zh) * 2024-06-03 2025-03-14 浙江大学 基于有机介质的ic光刻设备浸没边界流场收束及撤除方法

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JP2005118660A (ja) * 2003-10-16 2005-05-12 Seiko Epson Corp 撥液領域の形成方法およびパターン形成方法並びに電子デバイス
JP4194495B2 (ja) * 2004-01-07 2008-12-10 東京エレクトロン株式会社 塗布・現像装置
JP2007258217A (ja) * 2006-03-20 2007-10-04 Toppan Printing Co Ltd 印刷方法
JP2008235542A (ja) * 2007-03-20 2008-10-02 Dainippon Printing Co Ltd 液浸リソグラフィ用ウェハおよびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101483484B1 (ko) * 2010-05-19 2015-01-16 샌트랄 글래스 컴퍼니 리미티드 보호막 형성용 약액
KR101425543B1 (ko) * 2010-06-30 2014-08-01 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성용 약액 및 이를 사용하는 웨이퍼의 세정 방법
US9090782B2 (en) 2010-06-30 2015-07-28 Central Glass Company, Limited Liquid chemical for forming water repellent protective film
KR101523348B1 (ko) * 2011-04-14 2015-05-27 도쿄엘렉트론가부시키가이샤 에칭 방법, 에칭 장치 및 기억 매체
KR20190080773A (ko) * 2017-12-28 2019-07-08 도오꾜오까고오교 가부시끼가이샤 기판의 발수화 방법, 표면 처리제, 및 기판 표면을 세정액에 의해 세정할 때의 유기 패턴 또는 무기 패턴의 무너짐을 억제하는 방법

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Publication number Publication date
JP2008277748A (ja) 2008-11-13
TW200845128A (en) 2008-11-16
CN101276158A (zh) 2008-10-01

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