JP2008244317A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
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- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
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- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
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Abstract
【解決手段】半導体センサチップ10と、半導体センサチップ10からの出力信号を処理する信号処理回路12と、半導体センサチップ10及び信号処理回路12を内部に搭載する中空状の筐体20と、を備える半導体装置100において、例えば、筐体20を、一方が開口した凹部26を有する凹部状の底部材22と、当該底部材22の開口を覆う板状の蓋部材24とを接合して構成する。そして、底部材22と蓋部材24とを、いずれも半導体材料から構成させ、例えば、陽極接合や金属接合によって接合している。
【選択図】図1
Description
本発明の半導体装置は、
半導体材料からなる第1部材と半導体材料からなる第2部材とを接合して構成される中空状の筐体と、
前記筐体内に搭載される半導体センサチップと、
前記筐体内に配設され、前記半導体センサチップの出力信号を処理する信号処理回路と、
を備えたことを特徴とする半導体装置。
図1は、第1実施形態に係る半導体装置を示す概略断面図である。
図6は、第2実施形態に係る半導体装置を示す概略断面図である。
10A バンプ
12 信号処理回路
20 筐体
22 底部材
22A 平板状部材
22B 枠状部材
24 蓋部材
26 凹部
26A 貫通孔
28 段差部
30 端子
32 貫通配線
32A、32B配線
34 外部端子
36 ワイヤ
40 底部材用シリコンウエハ
40A 平板部材用シリコンウエハ
40B 枠状部材用シリコンウエハ
42 蓋部材用シリコンウエハ
50 導電材料
52 絶縁材料
54 封止材料
100、102半導体装置
Claims (7)
- 半導体材料からなる第1部材と半導体材料からなる第2部材とを接合して構成される中空状の筐体と、
前記筐体内に搭載される半導体センサチップと、
前記筐体内に配設され、前記半導体センサチップの出力信号を処理する信号処理回路と、
を備えることを特徴とする半導体装置。 - 前記第1部材及び第2部材のいずれか一方に、前記信号処理回路が形成されることを特徴とする請求項1に記載の半導体装置。
- 前記第1部材及び前記第2部材のうち、一方が凹部状の部材であり、他方が平板状の部材であることを特徴とする請求項1に記載の半導体装置。
- 前記凹部状の部材が、平板状の部材と枠状の部材とを接合して構成されることを特徴とする請求項3に記載の半導体装置。
- 前記第1部材及び前記第2部材に配線が配設され、
前記第1部材の配線と前記第2部材の配線とが、前記第1部材と前記第2部材との接合面で導電材料を介して電気的に接続されることを特徴とする請求項1に記載の半導体装置。 - 前記導電材料の周囲が絶縁材料で封止されると共に、前記第1部材と前記第2部材との接合部が当該絶縁部材で封止されることを特徴とする請求項5に記載の半導体装置。
- 前記筐体の周囲が封止材料により封止されることを特徴とする請求項1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085405A JP4933934B2 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置及び半導体装置の製造方法 |
US12/073,677 US7939931B2 (en) | 2007-03-28 | 2008-03-07 | Semiconductor device |
US13/064,603 US8207020B2 (en) | 2007-03-28 | 2011-04-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085405A JP4933934B2 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008244317A true JP2008244317A (ja) | 2008-10-09 |
JP4933934B2 JP4933934B2 (ja) | 2012-05-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007085405A Active JP4933934B2 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置及び半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (2) | US7939931B2 (ja) |
JP (1) | JP4933934B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117611A (ja) * | 2007-11-06 | 2009-05-28 | Shinko Electric Ind Co Ltd | 半導体パッケージ |
JP2010171224A (ja) * | 2009-01-23 | 2010-08-05 | Seiko Instruments Inc | 電子部品パッケージ及び電子部品パッケージの製造方法 |
JP2012517009A (ja) * | 2009-02-06 | 2012-07-26 | エプコス アクチエンゲゼルシャフト | センサモジュールとその製造方法 |
JP2013118408A (ja) * | 2013-03-06 | 2013-06-13 | Seiko Instruments Inc | 電子部品パッケージの製造方法 |
WO2014129351A1 (ja) * | 2013-02-21 | 2014-08-28 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置とその製造方法 |
WO2015136998A1 (ja) * | 2014-03-10 | 2015-09-17 | 三菱重工業株式会社 | マルチチップモジュール、オンボードコンピュータ、センサインターフェース基板、及びマルチチップモジュール製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8901755B2 (en) * | 2012-03-20 | 2014-12-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming conductive layer over metal substrate for electrical interconnect of semiconductor die |
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JPH0367177A (ja) * | 1989-08-07 | 1991-03-22 | Nippondenso Co Ltd | 半導体加速度センサ |
JP2000150695A (ja) * | 1998-11-05 | 2000-05-30 | Internatl Business Mach Corp <Ibm> | 半導体装置 |
JP2000176900A (ja) * | 1998-12-14 | 2000-06-27 | Robert Bosch Gmbh | 金属製のマイクロ構成素子をカプセル封止するための方法 |
JP2004209585A (ja) * | 2002-12-27 | 2004-07-29 | Shinko Electric Ind Co Ltd | 電子デバイス及びその製造方法 |
JP2005129888A (ja) * | 2003-10-03 | 2005-05-19 | Matsushita Electric Works Ltd | センサ装置、センサシステム、センサ装置の製造方法及びセンサシステムの製造方法 |
JP2006041532A (ja) * | 2004-07-27 | 2006-02-09 | Samsung Electronics Co Ltd | 空洞部を備えたキャップウェハー、それを用いた半導体パッケージ、およびキャップウェハー製造方法 |
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2007
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2008
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-
2011
- 2011-04-04 US US13/064,603 patent/US8207020B2/en active Active
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JPH0367177A (ja) * | 1989-08-07 | 1991-03-22 | Nippondenso Co Ltd | 半導体加速度センサ |
JP2000150695A (ja) * | 1998-11-05 | 2000-05-30 | Internatl Business Mach Corp <Ibm> | 半導体装置 |
JP2000176900A (ja) * | 1998-12-14 | 2000-06-27 | Robert Bosch Gmbh | 金属製のマイクロ構成素子をカプセル封止するための方法 |
JP2004209585A (ja) * | 2002-12-27 | 2004-07-29 | Shinko Electric Ind Co Ltd | 電子デバイス及びその製造方法 |
JP2005129888A (ja) * | 2003-10-03 | 2005-05-19 | Matsushita Electric Works Ltd | センサ装置、センサシステム、センサ装置の製造方法及びセンサシステムの製造方法 |
JP2006041532A (ja) * | 2004-07-27 | 2006-02-09 | Samsung Electronics Co Ltd | 空洞部を備えたキャップウェハー、それを用いた半導体パッケージ、およびキャップウェハー製造方法 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009117611A (ja) * | 2007-11-06 | 2009-05-28 | Shinko Electric Ind Co Ltd | 半導体パッケージ |
JP2010171224A (ja) * | 2009-01-23 | 2010-08-05 | Seiko Instruments Inc | 電子部品パッケージ及び電子部品パッケージの製造方法 |
JP2012517009A (ja) * | 2009-02-06 | 2012-07-26 | エプコス アクチエンゲゼルシャフト | センサモジュールとその製造方法 |
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WO2014129351A1 (ja) * | 2013-02-21 | 2014-08-28 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置とその製造方法 |
JP2013118408A (ja) * | 2013-03-06 | 2013-06-13 | Seiko Instruments Inc | 電子部品パッケージの製造方法 |
WO2015136998A1 (ja) * | 2014-03-10 | 2015-09-17 | 三菱重工業株式会社 | マルチチップモジュール、オンボードコンピュータ、センサインターフェース基板、及びマルチチップモジュール製造方法 |
JPWO2015136998A1 (ja) * | 2014-03-10 | 2017-04-06 | 三菱重工業株式会社 | マルチチップモジュール、オンボードコンピュータ、センサインターフェース基板、及びマルチチップモジュール製造方法 |
US10651150B2 (en) | 2014-03-10 | 2020-05-12 | Mitsubishi Heavy Industries, Ltd. | Multichip module including surface mounting part embedded therein |
Also Published As
Publication number | Publication date |
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US7939931B2 (en) | 2011-05-10 |
US8207020B2 (en) | 2012-06-26 |
US20080237830A1 (en) | 2008-10-02 |
JP4933934B2 (ja) | 2012-05-16 |
US20110183468A1 (en) | 2011-07-28 |
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