JP5643880B2 - Memsデバイスおよびその製造方法 - Google Patents
Memsデバイスおよびその製造方法 Download PDFInfo
- Publication number
- JP5643880B2 JP5643880B2 JP2013130599A JP2013130599A JP5643880B2 JP 5643880 B2 JP5643880 B2 JP 5643880B2 JP 2013130599 A JP2013130599 A JP 2013130599A JP 2013130599 A JP2013130599 A JP 2013130599A JP 5643880 B2 JP5643880 B2 JP 5643880B2
- Authority
- JP
- Japan
- Prior art keywords
- chip carrier
- die
- individual
- chip
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 210000003000 inclusion body Anatomy 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000969 carrier Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 12
- 239000008393 encapsulating agent Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000012815 thermoplastic material Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Acoustics & Sound (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Description
本出願は、参照することによって本明細書に完全に組み込まれる米国特許出願第11/446,398号の利益を主張するものである。
Claims (33)
- MEMSデバイスの製造方法であって、
複数の個別封入体を有する封入体キャリアダイをマトリクス構造に設けるステップと、
複数の個別チップキャリアを有するチップキャリアダイを前記マトリクス構造に設けるステップであって、前記個別チップキャリアそれぞれが、前記個別チップキャリアの厚みを完全に貫通して形成される音響ポートを含むものであるステップと、
前記複数の個別チップキャリア上に複数のMEMSダイを取り付けるステップと、
前記封入体キャリアダイを前記チップキャリアダイ上に接合して、前記取り付けられたMEMSダイそれぞれを前記複数の個別封入体のうちの1つで封止する、接合するステップと、
接合された前記封入体キャリアダイおよび前記チップキャリアダイを分離して、複数の個別MEMSデバイスを製造する、分離するステップと、を含み、さらに
(i)前記方法は、チップキャリアフレームを形成するステップをさらに含み、前記チップキャリアダイは、前記チップキャリアフレームが少なくともいくつかの前記チップキャリアダイのそれぞれの周囲の少なくとも部分に沿って拡張するように、前記チップキャリアフレーム内に配置される複数のチップキャリアダイのひとつである、
(ii)各前記音響ポートは、(a)前記各音響ポートが形成されている前記個別チップキャリアの第1の面に各第1の開口部を、そして(b)前記各音響ポートが形成されている前記個別チップキャリアの第2の面に各第2の開口部を含み、前記第1の開口部は前記第2の開口部から横にずれている、
(iii)前記チップキャリアダイはシリコン基板を使用して形成されている、
上記(i)、(ii)、(iii)の少なくともひとつを含む、
方法。 - 封入体キャリアダイを製造する前記ステップは、第1の距離だけ互いに離間されている前記複数の個別封入体をそれぞれ成形することを含む、請求項1に記載の方法。
- チップキャリアダイを製造する前記ステップは、前記複数の個別チップキャリアを形成するためにシリコン基板上で実施される複数のエッチングプロセスを含む、請求項1に記載の方法。
- 前記複数のエッチングプロセスは、接合された前記封入体キャリアダイおよび前記チップキャリアダイを切断する前記ステップが実施される領域で、前記シリコン基板の厚さを部分的に貫通して前記シリコン基板をエッチングするステップを含む、請求項3に記載の方法。
- 前記複数のエッチングプロセスは、前記音響ポートを形成するために、前記シリコン基板をエッチングするステップを含む、請求項3に記載の方法。
- 前記チップキャリアダイ上に前記封入体キャリアダイを接合する前記ステップは、前記封入体キャリアダイを前記チップキャリアダイに位置合わせするステップを含む、請求項1に記載の方法。
- 接合された前記封入体キャリアダイおよび前記チップキャリアダイを分離する前記ステップは、刃およびレーザ光のうちの1つを使用するステップを含む、請求項1に記載の方法。
- 隣接する個別チップキャリア間の第1の距離および隣接する個別封入体間の第2の距離は、ほぼ等しい、請求項7に記載の方法。
- 前記刃の幅および前記レーザ光の幅は、前記第1および第2の距離にほぼ等しい、請求項8に記載の方法。
- 前記個別チップキャリアそれぞれの上に複数の導電性パッドを形成するステップをさらに含む、請求項1に記載の方法。
- 前記チップキャリア上に取り付けられる前記MEMSダイを、それぞれ前記チップキャリア上の前記導電性パッドに電気的に接続するステップをさらに含む、請求項10に記載の方法。
- 各前記複数の個別チップキャリア上に複数のランドグリッドアレイパッドを形成するステップをさらに含む、請求項10または11に記載の方法。
- 前記個別チップキャリアの前記導電性パッドは前記ランドグリッドアレイパッドに電気的接続されている、請求項12に記載の方法。
- 各前記複数のMEMSダイ上に複数の導電性パッドを形成するステップをさらに含む、請求項1から13のいずれかに記載の方法。
- 前記MEMSダイは導電性ワイヤを介して前記個別チップキャリアに接続されている、請求項1から14のいずれかに記載の方法。
- 前記MEMSダイは前記音響ポートと連通している、請求項1から15のいずれかに記載の方法。
- 前記封入体キャリアダイは外部キャリアフレームを含む、請求項1から16のいずれかに記載の方法。
- 前記外部キャリアフレームは、前記外部キャリアフレームの周縁部に沿って形成されたアライメントマークを含む、請求項1から17のいずれかに記載の方法。
- 前記アライメントマークはホールである、請求項18に記載の方法。
- 前記第1の距離は前記個別封入体の側壁の厚さおよび前記個別封入体の間隔の2倍に等しい、請求項8に記載の方法。
- 前記方法は、チップキャリアフレームを形成するステップを含み、前記チップキャリアダイは、前記チップキャリアフレームが少なくともいくつかの前記チップキャリアダイのそれぞれの周囲の少なくとも部分に沿って拡張するように、前記チップキャリアフレーム内に配置される前記複数のチップキャリアダイのひとつである、請求項1から20のいずれかに記載の方法。
- 前記チップキャリアフレームにホールをエッチングするステップをさらに含む、請求項21に記載の方法。
- 前記ホールのすくなくともいくつかは前記チップキャリアダイのタブを受け入れる、請求項22に記載の方法。
- 前記封入体キャリアダイを前記チップキャリアダイに位置合わせするための少なくともひとつの前記ホールを使用するステップをさらに含む、請求項22または23のいずれかに記載の方法。
- 前記位置合わせは自動光学装置により行われる、請求項24に記載の方法。
- 前記自動光学装置は画像比較および回折パターンアライメントのひとつを含む、請求項25に記載の方法。
- 前記チップキャリアフレームは複数の空間を含む、請求項21から26のいずれかに記載の方法。
- 前記封入体キャリアダイおよび前記接合されたチップキャリアダイを分離する前記ステップは、前記前記封入体キャリアダイおよび前記チップキャリアダイを前記チップキャリアフレームから分離するステップを含む、請求項21から27のいずれかに記載の方法。
- 各前記音響ポートは前記横にずれた第1の開口部と第2の開口部を含む、請求項1から28のいずれかに記載の方法。
- 前記チップキャリアダイは前記シリコン基板を使用して形成される、請求項1から29のいずれかに記載の方法。
- 各前記個別封入体は熱可塑性および導電性材料を使用して形成される、請求項1から30のいずれかに記載の方法。
- 前記導電性材料は金属またはカーボンである、請求項31に記載の方法。
- 各前記個別封入体はそれぞれ一体成形の封入体である、請求項1から30のいずれかに記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/446,398 | 2006-06-05 | ||
US11/446,398 US7763488B2 (en) | 2006-06-05 | 2006-06-05 | Method of fabricating MEMS device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009514277A Division JP5551934B2 (ja) | 2006-06-05 | 2007-05-21 | Memsデバイスおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013208707A JP2013208707A (ja) | 2013-10-10 |
JP5643880B2 true JP5643880B2 (ja) | 2014-12-17 |
Family
ID=38789131
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009514277A Active JP5551934B2 (ja) | 2006-06-05 | 2007-05-21 | Memsデバイスおよびその製造方法 |
JP2013130599A Active JP5643880B2 (ja) | 2006-06-05 | 2013-06-21 | Memsデバイスおよびその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009514277A Active JP5551934B2 (ja) | 2006-06-05 | 2007-05-21 | Memsデバイスおよびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7763488B2 (ja) |
EP (1) | EP2035327B1 (ja) |
JP (2) | JP5551934B2 (ja) |
KR (1) | KR101544616B1 (ja) |
TW (1) | TWI419832B (ja) |
WO (1) | WO2007145778A2 (ja) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5174673B2 (ja) * | 2005-10-14 | 2013-04-03 | エスティーマイクロエレクトロニクス エス.アール.エル. | 基板レベル・アセンブリを具えた電子装置及びその製造処理方法 |
US8193596B2 (en) * | 2008-09-03 | 2012-06-05 | Solid State System Co., Ltd. | Micro-electro-mechanical systems (MEMS) package |
US20100086146A1 (en) * | 2008-10-02 | 2010-04-08 | Fortemedia, Inc. | Silicon-based microphone package |
US8102015B2 (en) * | 2008-10-02 | 2012-01-24 | Fortemedia, Inc. | Microphone package with minimum footprint size and thickness |
WO2010045107A2 (en) * | 2008-10-14 | 2010-04-22 | Knowles Electronics, Llc | Microphone having multiple transducer elements |
US8351635B2 (en) * | 2008-11-05 | 2013-01-08 | Fortemedia, Inc. | Silicon-based microphone structure with electromagnetic interference shielding means |
US8351634B2 (en) * | 2008-11-26 | 2013-01-08 | Analog Devices, Inc. | Side-ported MEMS microphone assembly |
EP2406964B1 (en) * | 2009-03-09 | 2013-04-17 | Nxp B.V. | Microphone and accelerometer |
US20100264522A1 (en) * | 2009-04-20 | 2010-10-21 | Chien-Pin Chen | Semiconductor device having at least one bump without overlapping specific pad or directly contacting specific pad |
EP2252077B1 (en) * | 2009-05-11 | 2012-07-11 | STMicroelectronics Srl | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
TW201126654A (en) * | 2010-01-22 | 2011-08-01 | Lingsen Precision Ind Ltd | Micro electro-mechanical package module |
US8577063B2 (en) * | 2010-02-18 | 2013-11-05 | Analog Devices, Inc. | Packages and methods for packaging MEMS microphone devices |
US9215519B2 (en) | 2010-07-30 | 2015-12-15 | Invensense, Inc. | Reduced footprint microphone system with spacer member having through-hole |
US9258634B2 (en) * | 2010-07-30 | 2016-02-09 | Invensense, Inc. | Microphone system with offset apertures |
US8447057B2 (en) | 2011-03-18 | 2013-05-21 | Analog Devices, Inc. | Packages and methods for packaging MEMS microphone devices |
US8625832B2 (en) | 2011-04-04 | 2014-01-07 | Invensense, Inc. | Packages and methods for packaging microphone devices |
US9239386B2 (en) * | 2011-10-05 | 2016-01-19 | Infineon Technologies Ag | Sonic sensors and packages |
US8779535B2 (en) | 2012-03-14 | 2014-07-15 | Analog Devices, Inc. | Packaged integrated device die between an external and internal housing |
US9078063B2 (en) * | 2012-08-10 | 2015-07-07 | Knowles Electronics, Llc | Microphone assembly with barrier to prevent contaminant infiltration |
CN104769626A (zh) | 2012-09-04 | 2015-07-08 | Linq3科技公司 | 用于通过在智能电话和手持装置上使用条形码的一体化游戏娱乐的系统和方法 |
US10229561B2 (en) | 2012-09-04 | 2019-03-12 | Linq3 Technologies Llc | Processing of a user device game-playing transaction based on location |
US9672697B2 (en) * | 2012-09-04 | 2017-06-06 | Linq3 Technologies Llc | Processing of a mobile device game-playing transaction conducted between the mobile device and a bluetooth terminal |
US10217326B2 (en) | 2012-09-04 | 2019-02-26 | Linq3 Technologies Llc | Processing of a user device game-playing transaction based on location |
US10943432B2 (en) | 2012-09-04 | 2021-03-09 | E2Interactive, Inc. | Processing of a game-playing transaction based on location |
US10089608B2 (en) | 2012-09-04 | 2018-10-02 | Linq3 Technologies Llc | Processing of a user device game-playing transaction based on location |
US9824340B2 (en) | 2012-09-04 | 2017-11-21 | Linq3 Technologies Llc | Processing of a user device game-playing transaction based on location |
WO2014040017A1 (en) | 2012-09-10 | 2014-03-13 | Robert Bosch Gmbh | Mems microphone package with molded interconnect device |
EP2706567A1 (en) * | 2012-09-11 | 2014-03-12 | Nxp B.V. | Integrated circuit including an environmental sensor |
US9156680B2 (en) | 2012-10-26 | 2015-10-13 | Analog Devices, Inc. | Packages and methods for packaging |
US9226052B2 (en) * | 2013-01-22 | 2015-12-29 | Invensense, Inc. | Microphone system with non-orthogonally mounted microphone die |
US9809448B2 (en) * | 2013-03-13 | 2017-11-07 | Invensense, Inc. | Systems and apparatus having MEMS acoustic sensors and other MEMS sensors and methods of fabrication of the same |
JP6160160B2 (ja) | 2013-03-26 | 2017-07-12 | オムロン株式会社 | マイクロフォン |
US9584889B2 (en) * | 2013-08-27 | 2017-02-28 | Infineon Technologies Ag | System and method for packaged MEMS device having embedding arrangement, MEMS die, and grille |
KR101840626B1 (ko) | 2013-08-29 | 2018-03-21 | 로베르트 보쉬 게엠베하 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
CN105874265B (zh) * | 2013-12-17 | 2019-06-18 | 亮锐控股有限公司 | 低和高光束led灯 |
KR102287396B1 (ko) * | 2014-10-21 | 2021-08-06 | 삼성전자주식회사 | 시스템 온 패키지 모듈과 이를 포함하는 모바일 컴퓨팅 장치 |
TWI539831B (zh) * | 2014-12-05 | 2016-06-21 | 財團法人工業技術研究院 | 微機電麥克風封裝 |
US9491558B2 (en) * | 2014-12-23 | 2016-11-08 | Robert Bosch Gmbh | Method for testing signal-to-noise ratio using a film frame |
US9800971B2 (en) | 2015-03-17 | 2017-10-24 | Knowles Electronics, Llc | Acoustic apparatus with side port |
IT201700103489A1 (it) | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | Metodo di fabbricazione di una membrana filtrante sottile, dispositivo trasduttore acustico includente la membrana filtrante, metodo di assemblaggio del dispositivo trasduttore acustico e sistema elettronico |
US10730743B2 (en) | 2017-11-06 | 2020-08-04 | Analog Devices Global Unlimited Company | Gas sensor packages |
CN110902642A (zh) * | 2018-09-17 | 2020-03-24 | 新科实业有限公司 | Mems封装件及制造其的方法 |
US11587839B2 (en) | 2019-06-27 | 2023-02-21 | Analog Devices, Inc. | Device with chemical reaction chamber |
US20210092500A1 (en) * | 2019-09-22 | 2021-03-25 | xMEMS Labs, Inc. | Package structure of sound producing device and manufacturing method thereof |
US11805342B2 (en) | 2019-09-22 | 2023-10-31 | xMEMS Labs, Inc. | Sound producing package structure and manufacturing method thereof |
US11395073B2 (en) | 2020-04-18 | 2022-07-19 | xMEMS Labs, Inc. | Sound producing package structure and method for packaging sound producing package structure |
US11057716B1 (en) | 2019-12-27 | 2021-07-06 | xMEMS Labs, Inc. | Sound producing device |
US11252511B2 (en) | 2019-12-27 | 2022-02-15 | xMEMS Labs, Inc. | Package structure and methods of manufacturing sound producing chip, forming package structure and forming sound producing apparatus |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US488221A (en) * | 1892-12-20 | Howard potter | ||
US4545926A (en) | 1980-04-21 | 1985-10-08 | Raychem Corporation | Conductive polymer compositions and devices |
JPS61190141U (ja) * | 1985-05-20 | 1986-11-27 | ||
US4882212A (en) | 1986-10-30 | 1989-11-21 | Olin Corporation | Electronic packaging of components incorporating a ceramic-glass-metal composite |
JP2689467B2 (ja) * | 1988-03-29 | 1997-12-10 | 日本電気株式会社 | 半導体集積回路装置のパッケージ |
US5736783A (en) | 1993-10-08 | 1998-04-07 | Stratedge Corporation. | High frequency microelectronics package |
US5827999A (en) | 1994-05-26 | 1998-10-27 | Amkor Electronics, Inc. | Homogeneous chip carrier package |
US6320257B1 (en) | 1994-09-27 | 2001-11-20 | Foster-Miller, Inc. | Chip packaging technique |
US5721019A (en) | 1995-01-19 | 1998-02-24 | Martin Marietta Corporation | Electromagnetic attenuating laminate and method for its formation |
AU2923397A (en) | 1996-04-18 | 1997-11-07 | California Institute Of Technology | Thin film electret microphone |
US7166910B2 (en) * | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
US7434305B2 (en) | 2000-11-28 | 2008-10-14 | Knowles Electronics, Llc. | Method of manufacturing a microphone |
ES2214449T3 (es) * | 2000-12-20 | 2004-09-16 | Reemtsma Cigarettenfabriken Gmbh | Empaquetado de corte fino. |
AUPR245401A0 (en) | 2001-01-10 | 2001-02-01 | Silverbrook Research Pty Ltd | An apparatus (WSM07) |
AUPR244801A0 (en) * | 2001-01-10 | 2001-02-01 | Silverbrook Research Pty Ltd | A method and apparatus (WSM01) |
US6900383B2 (en) | 2001-03-19 | 2005-05-31 | Hewlett-Packard Development Company, L.P. | Board-level EMI shield that adheres to and conforms with printed circuit board component and board surfaces |
US7146016B2 (en) * | 2001-11-27 | 2006-12-05 | Center For National Research Initiatives | Miniature condenser microphone and fabrication method therefor |
US6664713B2 (en) | 2001-12-04 | 2003-12-16 | Peter V. Boesen | Single chip device for voice communications |
US6673697B2 (en) * | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
US6713314B2 (en) * | 2002-08-14 | 2004-03-30 | Intel Corporation | Hermetically packaging a microelectromechanical switch and a film bulk acoustic resonator |
US6929974B2 (en) * | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
DE10303263B4 (de) * | 2003-01-28 | 2012-01-05 | Infineon Technologies Ag | Mikrophonanordnung |
US20040166662A1 (en) * | 2003-02-21 | 2004-08-26 | Aptos Corporation | MEMS wafer level chip scale package |
JP2005064257A (ja) * | 2003-08-12 | 2005-03-10 | Matsushita Electric Ind Co Ltd | 高周波回路及びその製造方法 |
JP2005079345A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 高周波回路およびその製造方法 |
US7224056B2 (en) * | 2003-09-26 | 2007-05-29 | Tessera, Inc. | Back-face and edge interconnects for lidded package |
JP3975194B2 (ja) * | 2003-12-02 | 2007-09-12 | 株式会社フジクラ | パッケージの製造方法 |
US20050189635A1 (en) * | 2004-03-01 | 2005-09-01 | Tessera, Inc. | Packaged acoustic and electromagnetic transducer chips |
KR20060127166A (ko) * | 2004-03-09 | 2006-12-11 | 마츠시타 덴끼 산교 가부시키가이샤 | 일렉트릿 컨덴서 마이크로폰 |
JP2006173557A (ja) * | 2004-11-22 | 2006-06-29 | Toshiba Corp | 中空型半導体装置とその製造方法 |
US7436054B2 (en) * | 2006-03-03 | 2008-10-14 | Silicon Matrix, Pte. Ltd. | MEMS microphone with a stacked PCB package and method of producing the same |
-
2006
- 2006-06-05 US US11/446,398 patent/US7763488B2/en active Active
-
2007
- 2007-05-21 JP JP2009514277A patent/JP5551934B2/ja active Active
- 2007-05-21 EP EP07777193.9A patent/EP2035327B1/en active Active
- 2007-05-21 KR KR1020087031749A patent/KR101544616B1/ko active IP Right Grant
- 2007-05-21 WO PCT/US2007/012059 patent/WO2007145778A2/en active Application Filing
- 2007-05-29 TW TW096119122A patent/TWI419832B/zh active
-
2010
- 2010-06-28 US US12/825,131 patent/US8203190B2/en active Active
-
2013
- 2013-06-21 JP JP2013130599A patent/JP5643880B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20100264499A1 (en) | 2010-10-21 |
EP2035327A2 (en) | 2009-03-18 |
JP2009540566A (ja) | 2009-11-19 |
WO2007145778A2 (en) | 2007-12-21 |
KR101544616B1 (ko) | 2015-08-17 |
US8203190B2 (en) | 2012-06-19 |
JP5551934B2 (ja) | 2014-07-16 |
TW200817278A (en) | 2008-04-16 |
EP2035327A4 (en) | 2012-02-29 |
TWI419832B (zh) | 2013-12-21 |
KR20090033843A (ko) | 2009-04-06 |
EP2035327B1 (en) | 2018-09-26 |
WO2007145778A3 (en) | 2008-05-15 |
US20070278601A1 (en) | 2007-12-06 |
JP2013208707A (ja) | 2013-10-10 |
US7763488B2 (en) | 2010-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5643880B2 (ja) | Memsデバイスおよびその製造方法 | |
KR100907514B1 (ko) | 센서 장치, 센서 시스템 및 그것의 제조 방법 | |
US8043897B2 (en) | Method for forming micro-electro-mechanical system (MEMS) package | |
JP5045769B2 (ja) | センサ装置の製造方法 | |
TWI469233B (zh) | 具有中空封裝件之封裝系統 | |
US7322239B2 (en) | Semiconductor device and manufacturing method thereof | |
US9346668B1 (en) | Molded cavity substrate MEMS package fabrication method and structure | |
JP4539155B2 (ja) | センサシステムの製造方法 | |
CN104303262A (zh) | 用于其中一部分暴露在环境下的密封mems设备的工艺 | |
EP1898462B1 (en) | Semiconductor apparatus | |
JP2006247833A (ja) | Mems素子パッケージ及びその製造方法 | |
JP4933934B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
KR100826393B1 (ko) | 전도성 패턴을 갖는 실링 라인으로 구비된 웨이퍼 레벨디바이스 패키지 및 그 패키징 방법 | |
JP2007048994A (ja) | 半導体装置及びその製造方法 | |
CN108987293B (zh) | 集成带有复杂三维结构盖板的芯片的晶圆级封装方法 | |
JP2006186357A (ja) | センサ装置及びその製造方法 | |
JP2006201158A (ja) | センサ装置 | |
CN100590823C (zh) | 晶粒重新配置的封装结构中使用对准标志的制作方法 | |
JPH11121647A (ja) | 半導体装置及びその製造方法 | |
CN212677376U (zh) | 微机电系统与微机电系统的封装结构 | |
JP5955024B2 (ja) | Memsモジュール及びその製造方法 | |
TWI324890B (en) | Micro electro-mechanical system device and manufacturing method thereof | |
JP2024507541A (ja) | チップセンサのためのオープンパッケージ | |
KR101176350B1 (ko) | 반도체 패키지 제조용 기판 및 이를 이용한 반도체 패키지 | |
JP2006186358A (ja) | センサ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140407 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140707 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141002 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141031 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5643880 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |