JP2008182228A - 熱処理チャンバにおけるウエハ支持体の温度測定及び制御 - Google Patents
熱処理チャンバにおけるウエハ支持体の温度測定及び制御 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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Abstract
【解決手段】 本発明は、急速加熱処理中に基板に対する均一な加熱を達成する装置及び方法を提供する。より詳細には、本発明は、基板に亘る温度均一性を改善するように急速加熱処理中に基板を支持するエッジリングの温度を制御する装置及び方法を提供する。
【選択図】 図2
Description
[0001]本発明は、一般に、半導体処理の分野に関する。より詳細には、本発明は、半導体基板を熱処理するための方法及び装置に関する。
[0002]急速加熱処理(RTP)は、半導体処理中に基板をアニールするための処理である。RTP中に、制御された環境において、約1350℃までの最大温度へと基板を急速加熱するのに、一般的には、熱放射線が使用される。この最大温度は、その処理に依存して、1秒より短い時間から数分までの範囲内の特定の時間中、維持され、それから、基板は、更なる処理のため室温まで冷却される。加熱放射線源としては、高強度タングステンハロゲンランプが普通に使用される。基板は、この基板に伝導的に結合される加熱サセプタによって付加的に加熱することができる。
Claims (22)
- 基板を処理するためのチャンバにおいて、
処理空間を画成するチャンバ包囲体と、
上記処理空間に配設された基板支持体と、
上記基板支持体に配設され、上記基板の周辺で上記基板を支持するように構成されたエッジリングと、
上記基板を加熱するように構成された第1の加熱源と、
上記エッジリングを加熱するように構成され、上記第1の加熱源とは独立して制御できる第2の加熱源と、
を備えるチャンバ。 - 上記第2の加熱源は、輻射ヒーター、伝導加熱源、抵抗ヒーター、誘導ヒーター及びマイクロ波ヒーターのうちの1つである、請求項1に記載のチャンバ。
- 上記エッジリングの熱特性を測定するように構成されたリング熱プローブを更に備える、請求項1に記載のチャンバ。
- 上記リング熱プローブは、高温計である、請求項3に記載のチャンバ。
- 上記第1の加熱源及び第2の加熱源は、上記チャンバ空間を加熱するように構成された輻射加熱源の独立制御可能なゾーンである、請求項1に記載のチャンバ。
- 上記エッジリングの方へ冷却ガスを向けるように構成されたガスジェットを更に備える、請求項1に記載のチャンバ。
- 上記第1の加熱源及び第2の加熱源は、上記エッジリングの互いに反対の側に配設される、請求項1に記載のチャンバ。
- 上記第1の加熱源及び第2の加熱源は、上記エッジリングの同じ側に配設される、請求項1に記載のチャンバ。
- チャンバ空間を画成するチャンバ本体と、
上記チャンバ空間に配設され、処理すべき基板と上記基板の周辺近くで熱的に結合されるように構成された温度制御エッジリングと、
上記基板の表面を主として加熱するように構成された第1の加熱源と、
上記温度制御エッジリングを主として加熱するように構成された第2の加熱源と、
を備える急速加熱処理チャンバ。 - 上記温度制御エッジリングの熱特性を測定するように構成されたリング熱プローブを更に備える、請求項9に記載の急速加熱処理チャンバ。
- 上記温度制御エッジリングを冷却するように構成された冷却装置を更に備える、請求項10に記載の急速加熱処理チャンバ。
- 上記第1の加熱源及び第2の加熱源は、上記チャンバ空間を輻射加熱するように構成されたランプアセンブリの独立制御可能なゾーンである、請求項9に記載の急速加熱処理チャンバ。
- 上記第1の加熱源及び第2の加熱源は、上記温度制御エッジリングの互いに反対の側に配設される、請求項9に記載の急速加熱処理チャンバ。
- 上記第2の加熱源は、輻射ヒーター、伝導加熱源、抵抗ヒーター、誘導ヒーター及びマイクロ波ヒーターのうちの1つである、請求項9に記載の急速加熱処理チャンバ。
- ターゲット温度へと基板を均一に加熱するための方法において、
第1の加熱源に接続された処理チャンバに上記基板を配置するステップと、
上記基板の周辺をエッジリングに熱的に結合するステップと、
上記第1の加熱源で上記基板の表面を加熱するステップと、
上記ターゲット温度とは異なるリング温度に上記エッジリングを維持するステップと、
を含む方法。 - 上記リング温度に上記エッジリングを維持するステップは、第2の加熱源で上記エッジリングを加熱する段階を含み、上記第1の加熱源及び第2の加熱源は、独立制御可能なものである、請求項14に記載の方法。
- 上記第1の加熱源及び第2の加熱源は、ランプアセンブリの独立制御可能なゾーンである、請求項16に記載の方法。
- パージガスを使用して上記エッジリングを冷却するステップを更に含む、請求項16に記載の方法。
- 熱プローブを使用して上記エッジリングの温度を測定するステップと、
上記熱プローブによって測定された上記エッジリングの温度に従って上記第2の加熱源を調整するステップと、
を更に含む、請求項16に記載の方法。 - 上記リング温度は、上記ターゲット温度とは約10℃から約15℃異なる、請求項14に記載の方法。
- 上記リング温度は、上記ターゲット温度より高い、請求項14に記載の方法。
- 上記リング温度は、上記ターゲット温度より低い、請求項14に記載の方法。
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US11/623,238 US7860379B2 (en) | 2007-01-15 | 2007-01-15 | Temperature measurement and control of wafer support in thermal processing chamber |
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JP2008182228A5 JP2008182228A5 (ja) | 2011-02-24 |
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EP (1) | EP1944793A3 (ja) |
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US11476129B2 (en) | 2016-11-29 | 2022-10-18 | Tel Manufacturing And Engineering Of America, Inc. | Translating and rotating chuck for processing microelectronic substrates in a process chamber |
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Also Published As
Publication number | Publication date |
---|---|
EP1944793A2 (en) | 2008-07-16 |
KR20080067300A (ko) | 2008-07-18 |
TWI380372B (en) | 2012-12-21 |
US20110089166A1 (en) | 2011-04-21 |
TW200845222A (en) | 2008-11-16 |
US20080170842A1 (en) | 2008-07-17 |
EP1944793A3 (en) | 2011-11-23 |
US7860379B2 (en) | 2010-12-28 |
KR100978975B1 (ko) | 2010-08-30 |
CN101231941A (zh) | 2008-07-30 |
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