JP2008177576A - キャパシタを含むチップ・キャリア基板およびその製造方法 - Google Patents
キャパシタを含むチップ・キャリア基板およびその製造方法 Download PDFInfo
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- JP2008177576A JP2008177576A JP2008009137A JP2008009137A JP2008177576A JP 2008177576 A JP2008177576 A JP 2008177576A JP 2008009137 A JP2008009137 A JP 2008009137A JP 2008009137 A JP2008009137 A JP 2008009137A JP 2008177576 A JP2008177576 A JP 2008177576A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 149
- 239000000758 substrate Substances 0.000 title claims abstract description 143
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 claims abstract description 59
- 230000000694 effects Effects 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 9
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 46
- 239000007789 gas Substances 0.000 description 16
- 239000003989 dielectric material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000004377 microelectronic Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- -1 but not limited to Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/236—Terminals leading through the housing, i.e. lead-through
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】キャパシタ・アパーチャは、基板内でキャパシタ・アパーチャおよびバイア・アパーチャを同時にエッチングするために用いられるプラズマ・エッチ法におけるマイクロローディング効果に伴なってバイア・アパーチャよりも狭い線幅およびより浅い深さで形成される。その後、キャパシタ・アパーチャ内でキャパシタが形成および設置され、バイア・アパーチャ内でバイアが形成および設置される。第1のキャパシタ・プレート層、キャパシタ誘電体層および第2のキャパシタ・プレート層の様々な組み合わせは、キャパシタ・アパーチャおよびバイア・アパーチャに関しては連続し得る。
【選択図】図4
Description
12 マスク層
14 誘電体ライナ層
16 第1のキャパシタ・プレート層
20 第2のキャパシタ・プレート層
A1'' 第1のアパーチャ
A2'' 第2のアパーチャ
Claims (20)
- 基板であって、該基板を貫通して設置されたバイア・アパーチャと、該バイア・アパーチャから横に離間されて、前記基板内に設置されたキャパシタ・アパーチャとを含む前記基板と、
前記キャパシタ・アパーチャ内に設置されたキャパシタおよび前記バイア・アパーチャ内に設置されたバイアと、
を含み、前記キャパシタ・アパーチャが前記バイア・アパーチャよりも狭い線幅を有する、チップ・キャリア基板。 - 前記基板が半導体基板を含む、請求項1に記載のチップ・キャリア基板。
- 前記基板が誘電体基板を含む、請求項1に記載のチップ・キャリア基板。
- 前記キャパシタが、
前記キャパシタ・アパーチャをライニングする第1のキャパシタ・プレート層と、
前記第1のキャパシタ・プレート層上に設置されたキャパシタ誘電体層と、
前記キャパシタ誘電体層上に設置され前記キャパシタ・アパーチャを満たす第2のキャパシタ・プレート層と、
を含む、請求項1に記載のチップ・キャリア基板。 - 前記第1のキャパシタ・プレート層が、前記キャパシタ・アパーチャおよび前記バイア・アパーチャと連続している、請求項4に記載のチップ・キャリア基板。
- 前記キャパシタ誘電体層が、前記キャパシタ・アパーチャおよび前記バイア・アパーチャと連続している、請求項4に記載のチップ・キャリア基板。
- 前記第2のキャパシタ・プレート層が、前記キャパシタ・アパーチャおよび前記バイア・アパーチャと連続している、請求項4に記載のチップ・キャリア基板。
- 前記第1のキャパシタ・プレート層および前記第2のキャパシタ・プレート層の一方のみが、前記キャパシタ・アパーチャおよび前記バイア・アパーチャと連続している、請求項4に記載のチップ・キャリア基板。
- 前記第1のキャパシタ・プレート層、前記キャパシタ誘電体層および前記第2のキャパシタ・プレート層の各々が、前記キャパシタ・アパーチャおよび前記バイア・アパーチャと連続している、請求項4に記載のチップ・キャリア基板。
- 前記第1のキャパシタ・プレート層および前記第2のキャパシタ・プレート層のどちらも前記キャパシタ・アパーチャおよび前記バイア・アパーチャと連続していない、請求項4に記載のチップ・キャリア基板。
- チップ・キャリア基板を製造するための方法であって、
基板内に、バイア・アパーチャと、該バイア・アパーチャから横に離間されたキャパシタ・アパーチャとを同時に形成することと、
前記キャパシタ・アパーチャ内にキャパシタを、前記バイア・アパーチャ内にバイアを形成することと、
を含む、前記方法。 - 前記キャパシタ・アパーチャおよび前記バイア・アパーチャを同時に形成することが、半導体基板を用いて行なわれる、請求項11に記載の方法。
- 前記キャパシタ・アパーチャおよび前記バイア・アパーチャを同時に形成することが、誘電体基板を用いて行なわれる、請求項11に記載の方法。
- 前記同時に形成することがプラズマ・エッチ法を用いて行なわれる、請求項11に記載の方法。
- 前記プラズマ・エッチ法が、マイクロローディング効果を示す、請求項14に記載の方法。
- 前記キャパシタ・アパーチャ内に前記キャパシタを、前記バイア・アパーチャ内に前記バイアを形成することが、前記キャパシタおよび前記バイアを同時に形成して行なわれる、請求項11に記載の方法。
- チップ・キャリア基板を製造するための方法であって、
基板内に、バイア・アパーチャと、該バイア・アパーチャから横に離間されたキャパシタ・アパーチャとを同時に形成することであって、前記キャパシタ・アパーチャが前記バイア・アパーチャよりも狭い線幅および浅い深さで同時に形成されることと、
前記キャパシタ・アパーチャ内にキャパシタを、前記バイア・アパーチャ内にバイアを形成することと、
を含む、前記方法。 - 前記キャパシタ・アパーチャおよび前記バイア・アパーチャを同時に形成することが、半導体基板を用いて行なわれる、請求項17に記載の方法。
- 前記キャパシタ・アパーチャおよび前記バイア・アパーチャを同時に形成することが、誘電体基板を用いて行なわれる、請求項17に記載の方法。
- 前記キャパシタ・アパーチャ内に前記キャパシタを、前記バイア・アパーチャ内に前記バイアを形成することが、前記キャパシタおよび前記バイアを同時に形成して行なわれる、請求項17に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/624436 | 2007-01-18 | ||
US11/624,436 US7719079B2 (en) | 2007-01-18 | 2007-01-18 | Chip carrier substrate capacitor and method for fabrication thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008177576A true JP2008177576A (ja) | 2008-07-31 |
JP5089406B2 JP5089406B2 (ja) | 2012-12-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008009137A Expired - Fee Related JP5089406B2 (ja) | 2007-01-18 | 2008-01-18 | キャパシタを含むチップ・キャリア基板およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7719079B2 (ja) |
JP (1) | JP5089406B2 (ja) |
CN (1) | CN101226914B (ja) |
TW (1) | TWI409925B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012227267A (ja) * | 2011-04-18 | 2012-11-15 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及び配線基板の製造方法 |
JP2012227266A (ja) * | 2011-04-18 | 2012-11-15 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及び配線基板の製造方法 |
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FR2968130A1 (fr) | 2010-11-30 | 2012-06-01 | St Microelectronics Sa | Dispositif semi-conducteur comprenant un condensateur et un via de connexion electrique et procede de fabrication |
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FR3007197B1 (fr) * | 2013-06-18 | 2016-12-09 | St Microelectronics Crolles 2 Sas | Procede de realisation d'une liaison electrique traversante et d'un condensateur traversant dans un substrat, et dispositif correspondant |
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JP6416276B2 (ja) * | 2014-03-28 | 2018-10-31 | インテル コーポレイション | Tsv接続された背部側分離 |
US10068181B1 (en) * | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
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JP2012227267A (ja) * | 2011-04-18 | 2012-11-15 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及び配線基板の製造方法 |
JP2012227266A (ja) * | 2011-04-18 | 2012-11-15 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及び配線基板の製造方法 |
KR20150012574A (ko) * | 2013-07-25 | 2015-02-04 | 삼성전자주식회사 | Tsv 구조 및 디커플링 커패시터를 구비한 집적회로 소자 및 그 제조 방법 |
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Also Published As
Publication number | Publication date |
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TW200845347A (en) | 2008-11-16 |
US20090301992A1 (en) | 2009-12-10 |
US8173541B2 (en) | 2012-05-08 |
CN101226914B (zh) | 2010-06-02 |
US7719079B2 (en) | 2010-05-18 |
TWI409925B (zh) | 2013-09-21 |
JP5089406B2 (ja) | 2012-12-05 |
US20080173993A1 (en) | 2008-07-24 |
CN101226914A (zh) | 2008-07-23 |
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