JP2008166677A - 固体撮像装置とその製造方法並びにカメラ - Google Patents

固体撮像装置とその製造方法並びにカメラ Download PDF

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Publication number
JP2008166677A
JP2008166677A JP2007106900A JP2007106900A JP2008166677A JP 2008166677 A JP2008166677 A JP 2008166677A JP 2007106900 A JP2007106900 A JP 2007106900A JP 2007106900 A JP2007106900 A JP 2007106900A JP 2008166677 A JP2008166677 A JP 2008166677A
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Japan
Prior art keywords
imaging device
solid
state imaging
insulating film
recess
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Pending
Application number
JP2007106900A
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English (en)
Japanese (ja)
Inventor
Yoshitetsu Toumiya
祥哲 東宮
Keiji Taya
圭司 田谷
Haruhiko Ajisawa
治彦 味沢
Yuji Inoue
裕士 井上
Tetsudai Iwashita
哲大 岩下
Hideaki Kato
英明 加藤
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007106900A priority Critical patent/JP2008166677A/ja
Priority to TW096142893A priority patent/TW200834904A/zh
Priority to KR20070123033A priority patent/KR101496842B1/ko
Priority to US11/950,680 priority patent/US7973271B2/en
Priority to EP07023572A priority patent/EP1930950B1/en
Publication of JP2008166677A publication Critical patent/JP2008166677A/ja
Priority to US12/579,593 priority patent/US8003929B2/en
Priority to US13/163,129 priority patent/US8525098B2/en
Priority to US13/181,626 priority patent/US8981275B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
JP2007106900A 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ Pending JP2008166677A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2007106900A JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ
TW096142893A TW200834904A (en) 2006-12-08 2007-11-13 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
KR20070123033A KR101496842B1 (ko) 2006-12-08 2007-11-29 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라
US11/950,680 US7973271B2 (en) 2006-12-08 2007-12-05 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
EP07023572A EP1930950B1 (en) 2006-12-08 2007-12-05 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
US12/579,593 US8003929B2 (en) 2006-12-08 2009-10-15 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera
US13/163,129 US8525098B2 (en) 2006-12-08 2011-06-17 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
US13/181,626 US8981275B2 (en) 2006-12-08 2011-07-13 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006332421 2006-12-08
JP2007106900A JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ

Related Child Applications (1)

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JP2009132561A Division JP5639748B2 (ja) 2006-12-08 2009-06-01 固体撮像装置とその製造方法

Publications (1)

Publication Number Publication Date
JP2008166677A true JP2008166677A (ja) 2008-07-17

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Family Applications (2)

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JP2007106900A Pending JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ
JP2009132561A Expired - Fee Related JP5639748B2 (ja) 2006-12-08 2009-06-01 固体撮像装置とその製造方法

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JP2009132561A Expired - Fee Related JP5639748B2 (ja) 2006-12-08 2009-06-01 固体撮像装置とその製造方法

Country Status (4)

Country Link
JP (2) JP2008166677A (enrdf_load_stackoverflow)
KR (1) KR101496842B1 (enrdf_load_stackoverflow)
CN (1) CN100587961C (enrdf_load_stackoverflow)
TW (1) TW200834904A (enrdf_load_stackoverflow)

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JP2009272597A (ja) * 2008-04-09 2009-11-19 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2010087039A (ja) * 2008-09-29 2010-04-15 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2010141020A (ja) * 2008-12-10 2010-06-24 Sony Corp 固体撮像装置とその製造方法、電子機器並びに半導体装置
JP2010182765A (ja) * 2009-02-04 2010-08-19 Sony Corp 固体撮像装置および電子機器
JP2010199258A (ja) * 2009-02-25 2010-09-09 Sony Corp 固体撮像装置とその製造方法
JP2010225939A (ja) * 2009-03-24 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP2010239073A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像素子、撮像装置
JP2010239074A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像素子、撮像装置
JP2010287676A (ja) * 2009-06-10 2010-12-24 Sony Corp 固体撮像素子及びその製造方法、撮像装置
US8189083B2 (en) 2008-07-10 2012-05-29 Sony Corporation Solid-state imaging device, method for manufacturing the same and imaging apparatus
EP2487717A2 (en) 2011-02-09 2012-08-15 Canon Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion apparatus and image sensing system
CN102637711A (zh) * 2011-02-09 2012-08-15 佳能株式会社 光电转换元件、及使用该元件的光电转换装置和成像系统
JP2012182436A (ja) * 2011-02-09 2012-09-20 Canon Inc 光電変換素子、およびこれを用いた光電変換装置、撮像システム
JP2012182429A (ja) * 2011-02-09 2012-09-20 Canon Inc 半導体装置、及び半導体装置の製造方法
US8581313B2 (en) 2011-04-22 2013-11-12 Panasonic Corporation Solid-state imaging device
CN103579272A (zh) * 2012-08-07 2014-02-12 佳能株式会社 成像装置、成像系统和成像装置的制造方法
US8679922B2 (en) 2011-02-09 2014-03-25 Canon Kabushiki Kaisha Method of producing semiconductor device and method of producing solid-state image pickup device
JP2014082310A (ja) * 2012-10-16 2014-05-08 Canon Inc 固体撮像装置、固体撮像装置の製造方法、および撮像システム
US8728852B2 (en) 2008-04-09 2014-05-20 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
US8759933B2 (en) 2009-06-04 2014-06-24 Sony Corporation Solid-state image pickup element, method of manufacturing the same, and electronic apparatus using the same
JP2015005578A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
WO2015063965A1 (ja) * 2013-10-31 2015-05-07 パナソニックＩｐマネジメント株式会社 固体撮像装置
US9029176B2 (en) 2011-04-20 2015-05-12 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device and method for manufacturing the same
US9129877B2 (en) 2011-02-09 2015-09-08 Canon Kabushiki Kaishi Method of manufacturing a semiconductor device including a plurality of photoelectric conversion portions
JP2016004961A (ja) * 2014-06-19 2016-01-12 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2016171252A (ja) * 2015-03-13 2016-09-23 キヤノン株式会社 固体撮像装置の製造方法
JP2018200955A (ja) * 2017-05-26 2018-12-20 キヤノン株式会社 撮像装置、撮像システム、および、移動体
WO2019069752A1 (ja) * 2017-10-04 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
CN111034400A (zh) * 2019-12-23 2020-04-21 塔里木大学 一种圆盘钩齿耙式起膜装置
US10665734B2 (en) 2016-09-06 2020-05-26 Canon Kabushiki Kaisha Image sensor and image capturing apparatus
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JP4788742B2 (ja) * 2008-06-27 2011-10-05 ソニー株式会社 固体撮像装置及び電子機器
JP2010073902A (ja) * 2008-09-18 2010-04-02 Sony Corp イオン注入方法、固体撮像装置の製造方法、固体撮像装置、並びに電子機器
JP5402083B2 (ja) * 2008-09-29 2014-01-29 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5375141B2 (ja) * 2009-02-05 2013-12-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
TWI411102B (zh) * 2009-03-31 2013-10-01 Sony Corp 固態成像元件及成像裝置
JP5564847B2 (ja) * 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101680899B1 (ko) * 2009-09-02 2016-11-29 소니 주식회사 고체 촬상 장치 및 그 제조 방법
JP5974425B2 (ja) * 2010-05-20 2016-08-23 ソニー株式会社 固体撮像装置及びその製造方法並びに電子機器
JP5656484B2 (ja) 2010-07-07 2015-01-21 キヤノン株式会社 固体撮像装置および撮像システム
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
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JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP2012038986A (ja) * 2010-08-10 2012-02-23 Sony Corp 固体撮像装置とその製造方法、並びに電子機器
JP5709564B2 (ja) 2011-02-09 2015-04-30 キヤノン株式会社 半導体装置の製造方法
JP5372102B2 (ja) * 2011-02-09 2013-12-18 キヤノン株式会社 光電変換装置および撮像システム
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US9029176B2 (en) 2011-04-20 2015-05-12 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device and method for manufacturing the same
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US9239423B2 (en) 2012-08-07 2016-01-19 Canon Kabushiki Kaisha Imaging device, imaging system, and method for manufacturing imaging device
JP2014082310A (ja) * 2012-10-16 2014-05-08 Canon Inc 固体撮像装置、固体撮像装置の製造方法、および撮像システム
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JP2016004961A (ja) * 2014-06-19 2016-01-12 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
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