TWI362108B - - Google Patents
Download PDFInfo
- Publication number
- TWI362108B TWI362108B TW096142893A TW96142893A TWI362108B TW I362108 B TWI362108 B TW I362108B TW 096142893 A TW096142893 A TW 096142893A TW 96142893 A TW96142893 A TW 96142893A TW I362108 B TWI362108 B TW I362108B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- insulating film
- imaging device
- solid
- photodiode
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 claims description 104
- 238000011049 filling Methods 0.000 claims description 53
- 238000009792 diffusion process Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 50
- 238000004519 manufacturing process Methods 0.000 claims description 49
- 239000011347 resin Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 34
- 238000002161 passivation Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 150000004706 metal oxides Chemical class 0.000 claims description 15
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 12
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 11
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- -1 metal oxide ions Chemical class 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 210000004508 polar body Anatomy 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 173
- 230000004888 barrier function Effects 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000003449 preventive effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 206010012735 Diarrhoea Diseases 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006332421 | 2006-12-08 | ||
| JP2007106900A JP2008166677A (ja) | 2006-12-08 | 2007-04-16 | 固体撮像装置とその製造方法並びにカメラ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200834904A TW200834904A (en) | 2008-08-16 |
| TWI362108B true TWI362108B (enrdf_load_stackoverflow) | 2012-04-11 |
Family
ID=39547642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096142893A TW200834904A (en) | 2006-12-08 | 2007-11-13 | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP2008166677A (enrdf_load_stackoverflow) |
| KR (1) | KR101496842B1 (enrdf_load_stackoverflow) |
| CN (1) | CN100587961C (enrdf_load_stackoverflow) |
| TW (1) | TW200834904A (enrdf_load_stackoverflow) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009272596A (ja) * | 2008-04-09 | 2009-11-19 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| EP2109143B1 (en) | 2008-04-09 | 2013-05-29 | Sony Corporation | Solid-state imaging device, production method thereof, and electronic device |
| JP4788742B2 (ja) * | 2008-06-27 | 2011-10-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5446484B2 (ja) | 2008-07-10 | 2014-03-19 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
| JP2010073902A (ja) * | 2008-09-18 | 2010-04-02 | Sony Corp | イオン注入方法、固体撮像装置の製造方法、固体撮像装置、並びに電子機器 |
| JP5402083B2 (ja) * | 2008-09-29 | 2014-01-29 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP5521302B2 (ja) * | 2008-09-29 | 2014-06-11 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP4873001B2 (ja) | 2008-12-10 | 2012-02-08 | ソニー株式会社 | 固体撮像装置とその製造方法、電子機器並びに半導体装置 |
| JP2010182765A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 固体撮像装置および電子機器 |
| JP5375141B2 (ja) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
| JP5423042B2 (ja) * | 2009-02-25 | 2014-02-19 | ソニー株式会社 | 固体撮像装置の製造方法 |
| JP4856204B2 (ja) | 2009-03-24 | 2012-01-18 | 株式会社東芝 | 固体撮像装置の製造方法 |
| TWI411102B (zh) * | 2009-03-31 | 2013-10-01 | Sony Corp | 固態成像元件及成像裝置 |
| JP5332822B2 (ja) * | 2009-03-31 | 2013-11-06 | ソニー株式会社 | 固体撮像素子、撮像装置 |
| JP5332823B2 (ja) * | 2009-03-31 | 2013-11-06 | ソニー株式会社 | 固体撮像素子、撮像装置 |
| JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
| JP5446485B2 (ja) * | 2009-06-10 | 2014-03-19 | ソニー株式会社 | 固体撮像素子及びその製造方法、撮像装置 |
| JP5564847B2 (ja) * | 2009-07-23 | 2014-08-06 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| KR101680899B1 (ko) * | 2009-09-02 | 2016-11-29 | 소니 주식회사 | 고체 촬상 장치 및 그 제조 방법 |
| JP5974425B2 (ja) * | 2010-05-20 | 2016-08-23 | ソニー株式会社 | 固体撮像装置及びその製造方法並びに電子機器 |
| JP5656484B2 (ja) | 2010-07-07 | 2015-01-21 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| JP5697371B2 (ja) | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| JP5645513B2 (ja) | 2010-07-07 | 2014-12-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| JP2012038986A (ja) * | 2010-08-10 | 2012-02-23 | Sony Corp | 固体撮像装置とその製造方法、並びに電子機器 |
| JP5404732B2 (ja) * | 2011-02-09 | 2014-02-05 | キヤノン株式会社 | 光電変換素子およびこれを用いた光電変換装置、撮像システム |
| JP5921129B2 (ja) | 2011-02-09 | 2016-05-24 | キヤノン株式会社 | 固体撮像装置、及び固体撮像装置の製造方法 |
| EP2487717B1 (en) * | 2011-02-09 | 2014-09-17 | Canon Kabushiki Kaisha | Photoelectric conversion element, photoelectric conversion apparatus and image sensing system |
| JP5274678B2 (ja) * | 2011-02-09 | 2013-08-28 | キヤノン株式会社 | 光電変換素子、およびこれを用いた光電変換装置、撮像システム |
| JP5709564B2 (ja) | 2011-02-09 | 2015-04-30 | キヤノン株式会社 | 半導体装置の製造方法 |
| JP5372102B2 (ja) * | 2011-02-09 | 2013-12-18 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP5839807B2 (ja) | 2011-02-09 | 2016-01-06 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP5241902B2 (ja) | 2011-02-09 | 2013-07-17 | キヤノン株式会社 | 半導体装置の製造方法 |
| US8742525B2 (en) * | 2011-03-14 | 2014-06-03 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
| JP4866972B1 (ja) | 2011-04-20 | 2012-02-01 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| JP4846878B1 (ja) | 2011-04-22 | 2011-12-28 | パナソニック株式会社 | 固体撮像装置 |
| JP6053382B2 (ja) * | 2012-08-07 | 2016-12-27 | キヤノン株式会社 | 撮像装置、撮像システム、および撮像装置の製造方法。 |
| JP6308717B2 (ja) * | 2012-10-16 | 2018-04-11 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法、および撮像システム |
| JP6190175B2 (ja) * | 2013-06-19 | 2017-08-30 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP2015029011A (ja) * | 2013-07-30 | 2015-02-12 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP2016225324A (ja) * | 2013-10-31 | 2016-12-28 | パナソニックＩｐマネジメント株式会社 | 固体撮像装置 |
| JP6192598B2 (ja) * | 2014-06-19 | 2017-09-06 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
| JP6577724B2 (ja) * | 2015-03-13 | 2019-09-18 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| US10038026B2 (en) | 2015-06-25 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure for bonding improvement |
| US20170170215A1 (en) * | 2015-12-15 | 2017-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with anti-acid layer and method for forming the same |
| TWI593093B (zh) * | 2015-12-22 | 2017-07-21 | 力晶科技股份有限公司 | 半導體元件及其製造方法 |
| US10319765B2 (en) * | 2016-07-01 | 2019-06-11 | Canon Kabushiki Kaisha | Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter |
| JP6895724B2 (ja) | 2016-09-06 | 2021-06-30 | キヤノン株式会社 | 撮像素子及び撮像装置 |
| US10256266B2 (en) * | 2017-04-05 | 2019-04-09 | Omnivision Technologies, Inc. | Chip-scale image sensor package and associated method of making |
| CN107195646B (zh) * | 2017-04-06 | 2020-06-09 | 上海集成电路研发中心有限公司 | 一种图像传感器及其制造方法 |
| JP2018200955A (ja) * | 2017-05-26 | 2018-12-20 | キヤノン株式会社 | 撮像装置、撮像システム、および、移動体 |
| DE112018004434T5 (de) * | 2017-10-04 | 2020-05-20 | Sony Semiconductor Solutions Corporation | Festkörper-bildgebungselement und elektronische vorrichtung |
| US11031358B2 (en) * | 2018-03-01 | 2021-06-08 | Marvell Asia Pte, Ltd. | Overhang model for reducing passivation stress and method for producing the same |
| CN111034400B (zh) * | 2019-12-23 | 2022-06-03 | 塔里木大学 | 一种圆盘钩齿耙式起膜装置 |
| CN115588676B (zh) * | 2022-10-17 | 2024-12-17 | 武汉新芯集成电路股份有限公司 | 图像传感器及其制作方法 |
| CN117497551B (zh) * | 2023-12-25 | 2024-04-30 | 合肥晶合集成电路股份有限公司 | 图像传感器及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139300A (ja) * | 1994-11-10 | 1996-05-31 | Olympus Optical Co Ltd | 固体撮像装置 |
| KR20000041461A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 개선된 이미지센서 제조방법 |
| JP3959734B2 (ja) | 2001-12-28 | 2007-08-15 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
| JP2003282851A (ja) * | 2002-03-27 | 2003-10-03 | Sony Corp | 固体撮像装置の製造方法 |
| JP4120543B2 (ja) * | 2002-12-25 | 2008-07-16 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
| JP4117545B2 (ja) | 2002-12-25 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| US6861686B2 (en) * | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
| KR100524200B1 (ko) * | 2003-01-16 | 2005-10-26 | 삼성전자주식회사 | 이미지 소자 및 그 제조 방법 |
| KR100504563B1 (ko) * | 2004-08-24 | 2005-08-01 | 동부아남반도체 주식회사 | 이미지 센서 제조 방법 |
| JP2006222270A (ja) * | 2005-02-10 | 2006-08-24 | Sony Corp | 固体撮像素子及び固体撮像素子の製造方法 |
| KR100595329B1 (ko) * | 2005-02-17 | 2006-07-03 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
| US7666704B2 (en) * | 2005-04-22 | 2010-02-23 | Panasonic Corporation | Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device |
-
2007
- 2007-04-16 JP JP2007106900A patent/JP2008166677A/ja active Pending
- 2007-11-13 TW TW096142893A patent/TW200834904A/zh not_active IP Right Cessation
- 2007-11-29 KR KR20070123033A patent/KR101496842B1/ko not_active Expired - Fee Related
- 2007-12-10 CN CN200710197170A patent/CN100587961C/zh not_active Expired - Fee Related
-
2009
- 2009-06-01 JP JP2009132561A patent/JP5639748B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008166677A (ja) | 2008-07-17 |
| CN100587961C (zh) | 2010-02-03 |
| KR20080053193A (ko) | 2008-06-12 |
| JP5639748B2 (ja) | 2014-12-10 |
| CN101197386A (zh) | 2008-06-11 |
| TW200834904A (en) | 2008-08-16 |
| JP2009194402A (ja) | 2009-08-27 |
| KR101496842B1 (ko) | 2015-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI362108B (enrdf_load_stackoverflow) | ||
| JP5369441B2 (ja) | 固体撮像素子 | |
| US6969899B2 (en) | Image sensor with light guides | |
| EP1930950B1 (en) | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera | |
| US7646943B1 (en) | Optical waveguides in image sensors | |
| TWI401792B (zh) | Solid-state imaging devices and electronic machines | |
| US8229255B2 (en) | Optical waveguides in image sensors | |
| CN103400844B (zh) | 背侧照明的图像传感器 | |
| CN102214668B (zh) | 固态图像传感器和成像系统 | |
| JP6060851B2 (ja) | 固体撮像装置の製造方法 | |
| US20070187787A1 (en) | Pixel sensor structure including light pipe and method for fabrication thereof | |
| JP2011023409A (ja) | 固体撮像装置 | |
| JP2007181209A (ja) | イメージセンサ及びその製造方法 | |
| TW201828462A (zh) | 固態攝影元件 | |
| JP4923357B2 (ja) | 固体撮像装置の製造方法 | |
| JP5409087B2 (ja) | 固体撮像素子 | |
| JP2009290089A (ja) | 固体撮像装置およびその製造方法 | |
| JP2006140413A (ja) | 固体撮像素子 | |
| JP2010287636A (ja) | 固体撮像素子及びその製造方法 | |
| JP2006191000A (ja) | 光電変換装置 | |
| JP2017216396A (ja) | 固体撮像素子 | |
| JP2005340498A (ja) | 固体撮像素子 | |
| JP2006319037A (ja) | 固体撮像素子 | |
| JP2008283070A (ja) | 撮像素子 | |
| EP4167287A1 (en) | Image sensor and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |