KR101496842B1 - 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라 - Google Patents

고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라 Download PDF

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KR101496842B1
KR101496842B1 KR20070123033A KR20070123033A KR101496842B1 KR 101496842 B1 KR101496842 B1 KR 101496842B1 KR 20070123033 A KR20070123033 A KR 20070123033A KR 20070123033 A KR20070123033 A KR 20070123033A KR 101496842 B1 KR101496842 B1 KR 101496842B1
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insulating film
layer
concave portion
solid
imaging device
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KR20080053193A (ko
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요시노리 도우미야
게이지 다타니
하루히코 아지사와
유지 이노우에
데쓰히로 이와시타
히데아키 가토
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
KR20070123033A 2006-12-08 2007-11-29 고체 촬상 장치와 고체 촬상 장치의 제조 방법 및 카메라 Expired - Fee Related KR101496842B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006332421 2006-12-08
JPJP-P-2006-00332421 2006-12-08
JP2007106900A JP2008166677A (ja) 2006-12-08 2007-04-16 固体撮像装置とその製造方法並びにカメラ
JPJP-P-2007-00106900 2007-04-16

Publications (2)

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KR20080053193A KR20080053193A (ko) 2008-06-12
KR101496842B1 true KR101496842B1 (ko) 2015-02-27

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JP (2) JP2008166677A (enrdf_load_stackoverflow)
KR (1) KR101496842B1 (enrdf_load_stackoverflow)
CN (1) CN100587961C (enrdf_load_stackoverflow)
TW (1) TW200834904A (enrdf_load_stackoverflow)

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JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP5645513B2 (ja) 2010-07-07 2014-12-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP2012038986A (ja) * 2010-08-10 2012-02-23 Sony Corp 固体撮像装置とその製造方法、並びに電子機器
JP5404732B2 (ja) * 2011-02-09 2014-02-05 キヤノン株式会社 光電変換素子およびこれを用いた光電変換装置、撮像システム
JP5921129B2 (ja) 2011-02-09 2016-05-24 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
EP2487717B1 (en) * 2011-02-09 2014-09-17 Canon Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion apparatus and image sensing system
JP5274678B2 (ja) * 2011-02-09 2013-08-28 キヤノン株式会社 光電変換素子、およびこれを用いた光電変換装置、撮像システム
JP5709564B2 (ja) 2011-02-09 2015-04-30 キヤノン株式会社 半導体装置の製造方法
JP5372102B2 (ja) * 2011-02-09 2013-12-18 キヤノン株式会社 光電変換装置および撮像システム
JP5839807B2 (ja) 2011-02-09 2016-01-06 キヤノン株式会社 固体撮像装置の製造方法
JP5241902B2 (ja) 2011-02-09 2013-07-17 キヤノン株式会社 半導体装置の製造方法
US8742525B2 (en) * 2011-03-14 2014-06-03 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP4866972B1 (ja) 2011-04-20 2012-02-01 パナソニック株式会社 固体撮像装置及びその製造方法
JP4846878B1 (ja) 2011-04-22 2011-12-28 パナソニック株式会社 固体撮像装置
JP6053382B2 (ja) * 2012-08-07 2016-12-27 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の製造方法。
JP6308717B2 (ja) * 2012-10-16 2018-04-11 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム
JP6190175B2 (ja) * 2013-06-19 2017-08-30 キヤノン株式会社 固体撮像装置の製造方法
JP2015029011A (ja) * 2013-07-30 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2016225324A (ja) * 2013-10-31 2016-12-28 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP6192598B2 (ja) * 2014-06-19 2017-09-06 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP6577724B2 (ja) * 2015-03-13 2019-09-18 キヤノン株式会社 固体撮像装置の製造方法
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JP2008166677A (ja) 2008-07-17
CN100587961C (zh) 2010-02-03
KR20080053193A (ko) 2008-06-12
JP5639748B2 (ja) 2014-12-10
CN101197386A (zh) 2008-06-11
TWI362108B (enrdf_load_stackoverflow) 2012-04-11
TW200834904A (en) 2008-08-16
JP2009194402A (ja) 2009-08-27

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