JP6577724B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (13)
- 光電変換部を有する半導体基板を準備する第1工程と、
酸化シリコンを含む材料で構成された絶縁性の第1部材と、前記第1部材の上に配され且つ炭化シリコンを含む材料で構成された絶縁性の第2部材とを含む構造を前記半導体基板の上に形成する第2工程と、
前記第1部材の一部および前記第2部材の一部を除去して前記構造における前記光電変換部の上の位置に開口を形成する第3工程と、
前記開口を透光性の第3部材で埋めて、前記光電変換部に光を導くための導光部を形成する第4工程と、を有し、
前記第2工程では前記第2部材を第1温度で形成し、
前記第4工程では、前記第3部材をプラズマCVDにより前記第1温度よりも低い第2温度で形成し、
前記第1温度と前記第2温度との差は50℃以上である
ことを特徴とする固体撮像装置の製造方法。 - 前記第2工程では、前記第2部材をプラズマCVDにより形成し、
前記第4工程では、前記第3部材を高密度プラズマCVDにより形成する
ことを特徴とする請求項1に記載の固体撮像装置の製造方法。 - 前記第3部材をプラズマCVDにより形成するための処理装置のチャンバーに前記半導体基板を載置してから当該処理装置による前記半導体基板に対する処理が終わるまでの間に亘って前記半導体基板の温度が前記第2温度を超えることのないように当該処理装置を制御する
ことを特徴とする請求項1または請求項2に記載の固体撮像装置の製造方法。 - 前記第1温度は、390℃〜410℃の範囲内である
ことを特徴とする請求項1から請求項3のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第4工程の後に、前記第1温度よりも高い温度で熱処理を行う第5工程を含む
ことを特徴とする請求項1から請求項4のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第5工程では、水素ガス及び窒素ガスの少なくとも一方を含むガス雰囲気の下で前記熱処理を行う
ことを特徴とする請求項5に記載の固体撮像装置の製造方法。 - 前記第4工程と前記第5工程の間に、層内レンズを形成する工程をさらに有する
ことを特徴とする請求項5または請求項6に記載の固体撮像装置の製造方法。 - 前記構造は、金属で構成された第1配線をさらに含み、前記第2部材は、前記金属の拡散防止層として作用し、
前記固体撮像装置の製造方法は、
前記第4工程の後かつ前記第5工程の前に、前記構造の上に前記第1配線に接続された第2配線を形成する工程と、
前記第2配線を形成する工程の後かつ前記第5工程の前に、前記第2配線を覆うように前記構造の上に絶縁性の第4部材を形成し且つ加工して層内レンズを形成する工程と、
前記層内レンズを形成する工程の後かつ前記第5工程の前に、前記第4部材に、その一部を除去して前記第2配線が露出するように開口を形成する工程と、
をさらに有し、
第5工程は、前記第2配線が露出した状態で行う
ことを特徴とする請求項5から請求項7のいずれか1項に記載の固体撮像装置の製造方法。 - 前記構造は、金属で構成された配線をさらに含んでおり、前記第2部材は前記金属の拡散防止層として作用する
ことを特徴とする請求項1から請求項8のいずれか1項に記載の固体撮像装置の製造方法。 - 前記構造は、酸化シリコンを含む材料の層と炭化シリコンを含む材料の層とが交互に形成された複数の層で構成されており、
前記第2部材は、前記複数の層における前記炭化シリコンを含む材料の層のうち最上の層に位置する
ことを特徴とする請求項1から請求項9のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第3部材は、窒化シリコンを含む材料である、
ことを特徴とする請求項10に記載の固体撮像装置の製造方法。 - 前記第4工程では、ヘリウムガスを用いて温度を調節する
ことを特徴とする請求項1から請求項11のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第4工程においては、前記半導体基板の温度が前記第2温度に達するまで該温度の増加量が単調減少するように、前記半導体基板を昇温させる
ことを特徴とする請求項1から請求項12のいずれか1項に記載の固体撮像装置の製造方法。
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JP2015051293A JP6577724B2 (ja) | 2015-03-13 | 2015-03-13 | 固体撮像装置の製造方法 |
US15/055,949 US9608031B2 (en) | 2015-03-13 | 2016-02-29 | Method for manufacturing solid-state image sensor |
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US10475847B2 (en) * | 2016-04-28 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having stress-neutralized film stack and method of fabricating same |
JP2017220620A (ja) | 2016-06-09 | 2017-12-14 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP7381223B2 (ja) * | 2019-05-27 | 2023-11-15 | キヤノン株式会社 | 光電変換装置 |
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JP4117672B2 (ja) | 2002-05-01 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
US7193289B2 (en) | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
JP4349269B2 (ja) * | 2004-12-08 | 2009-10-21 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP4340248B2 (ja) * | 2005-03-17 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体撮像装置を製造する方法 |
JP2008166677A (ja) * | 2006-12-08 | 2008-07-17 | Sony Corp | 固体撮像装置とその製造方法並びにカメラ |
JP2008192951A (ja) | 2007-02-07 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP2009196832A (ja) * | 2008-02-20 | 2009-09-03 | National Institute Of Advanced Industrial & Technology | プラズマcvd法による単結晶ダイヤモンドの製造方法 |
JP4697258B2 (ja) * | 2008-05-09 | 2011-06-08 | ソニー株式会社 | 固体撮像装置と電子機器 |
JP5332822B2 (ja) * | 2009-03-31 | 2013-11-06 | ソニー株式会社 | 固体撮像素子、撮像装置 |
JP5493461B2 (ja) * | 2009-05-12 | 2014-05-14 | ソニー株式会社 | 固体撮像装置、電子機器及び固体撮像装置の製造方法 |
JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
JP2011258884A (ja) * | 2010-06-11 | 2011-12-22 | Panasonic Corp | 固体撮像装置およびその製造方法 |
US8377733B2 (en) * | 2010-08-13 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Antireflective layer for backside illuminated image sensor and method of manufacturing same |
US8405182B2 (en) * | 2011-05-02 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illuminated image sensor with improved stress immunity |
JP2014036092A (ja) * | 2012-08-08 | 2014-02-24 | Canon Inc | 光電変換装置 |
JP6190175B2 (ja) | 2013-06-19 | 2017-08-30 | キヤノン株式会社 | 固体撮像装置の製造方法 |
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