JP2008153684A - シリコン・ゲルマニウム・バイポーラ・トランジスタの製造方法 - Google Patents
シリコン・ゲルマニウム・バイポーラ・トランジスタの製造方法 Download PDFInfo
- Publication number
- JP2008153684A JP2008153684A JP2008018552A JP2008018552A JP2008153684A JP 2008153684 A JP2008153684 A JP 2008153684A JP 2008018552 A JP2008018552 A JP 2008018552A JP 2008018552 A JP2008018552 A JP 2008018552A JP 2008153684 A JP2008153684 A JP 2008153684A
- Authority
- JP
- Japan
- Prior art keywords
- region
- sige
- source gas
- base region
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 63
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 41
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 25
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 238000005137 deposition process Methods 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 5
- 239000005977 Ethylene Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910000078 germane Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000012634 fragment Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
【解決手段】(a)少なくともバイポーラ・デバイス領域を含む構造を設けるステップであって、前記バイポーラ・デバイス領域が、半導体基板内に形成された第1の伝導タイプのコレクタ領域を少なくとも含むステップと、
(b)前記コレクタ領域上にSiGeベース領域を堆積させるステップであって、堆積中に炭素を、前記コレクタ領域の全体および、前記SiGeベース領域の全体にわたって連続的に成長させるステップと、
(c)前記SiGeベース領域上に、パターン形成されたエミッタ領域を形成するステップとを含む方法。
【選択図】図4
Description
。シリコン中のホウ素の拡散は、格子間機構(interstitial mechanism)を介して行われ
、シリコン自己格子間原子(silicon self-interstitial)の濃度に比例する。カーボン
・リッチ領域の外側への炭素の拡散は、シリコン自己格子間原子の不飽和を引き起こす。その結果、この領域中のホウ素の拡散は抑制される。ホウ素の拡散を抑制できるにもかかわらず、SiGe領域中のベース上だけにCを形成するこの従来技術の方法は、パイプ・ショートを低減するのに効果的ではない。
H.J.Osten等、「Carbon Doped SiGe Hetero junction Bipolar Transistors for High Frequency Applications」、IEEEBTCM 7.1、109
(MBE)、またはプラズマ強化化学的気相堆積(PECVD)などの堆積プロセスを用いて、SiGe層のエピタキシャル成長中に行われる。本発明の方法を利用することにより、Siコレクタ領域とSiGeベース領域全体に炭素が連続的に形成される。さらに、本発明の方法がSiGeの歩留まりを向上させ、かつバイポーラ・パイプ・ショートを引き起こす転位を抑制することを本出願人らは発見した。
コレクタ領域およびSiGeベース領域中にCを含むSiGeバイポーラ・トランジスタを製作する方法であって、
(a)少なくともバイポーラ・デバイス領域を含む構造を設けるステップであって、前記バイポーラ・デバイス領域が、半導体基板内に形成された第1の伝導タイプのコレクタ領域を少なくとも含むステップと、
(b)前記コレクタ領域上にSiGeベース領域を堆積させるステップであって、堆積中に炭素を、前記コレクタ領域の全体および、前記SiGeベース領域の全体にわたって連続的に成長させるステップと、
(c)前記SiGeベース領域上に、パターン形成されたエミッタ領域を形成するステップとを含む。
第1の伝導タイプのコレクタ領域と、
SiGeベース領域と、
前記ベース領域の一部の上に形成された前記第1の伝導タイプのエミッタ領域とを備え、前記コレクタ領域および前記ベース領域は、前記コレクタ領域およびSiGeベース領域中に連続的に存在する炭素を含み、前記SiGeベースがさらにBでドープされる。好ましくは、Cは約5×1017から約1×1021cm−3の濃度でSiGeベース領域中に存在し、より適切には、Cは約1×1019から約1×1020cm−3の濃度でSiGeベース領域中に存在する。
Claims (13)
- コレクタ領域およびSiGeベース領域中にCを含むSiGeバイポーラ・トランジスタを製作する方法であって、
(a)少なくともバイポーラ・デバイス領域を含む構造を設けるステップであって、前記バイポーラ・デバイス領域が、半導体基板内に形成された第1の伝導タイプのコレクタ領域を少なくとも含むステップと、
(b)前記コレクタ領域上にSiGeベース領域を堆積させるステップであって、堆積中に炭素を、前記コレクタ領域の全体および、前記SiGeベース領域の全体にわたって連続的に成長させるステップと、
(c)前記SiGeベース領域上に、パターン形成されたエミッタ領域を形成するステップとを含み、
前記コレクタが、前記半導体基板の表面上にSi層をエピタキシャル成長させるステップと、エピタキシャル成長したSi層上に酸化物層を形成するステップと、前記Si層に前記第1の伝導タイプのドーパントを注入するステップと、前記酸化物層を除去するステップとによって形成される方法。 - 前記酸化物層が、HFエッチング・プロセスによって除去される請求項1に記載の方法。
- ステップ(b)の堆積プロセスが、超高真空化学的気相堆積(UHVCVD)、分子線エピタキシ(MBE)、急速熱化学的気相堆積(RTCVD)、およびプラズマ強化化学的気相堆積(PECVD)からなるグループから選択される請求項1又は2に記載の方法。
- 前記堆積プロセスがUHVCVDプロセスである請求項3に記載の方法。
- 前記UHVCVDプロセスが、温度650℃以下、かつ動作圧力250ミリトル以下で実施される請求項4に記載の方法。
- 前記UHVCVDプロセスが、温度500℃から650℃、かつ動作圧力0.1から20ミリトルで実施される請求項5に記載の方法。
- 前記UHVCVDプロセスが、Siソース・ガス、Geソース・ガス、Bソース・ガス、およびCソース・ガスを含む混合気を用いる請求項4〜6のいずれか1項に記載の方法。
- 前記Siソース・ガスがシランであり、前記Geソース・ガスがゲルマンであり、前記ホウ素ソース・ガスがB2H6であり、前記Cソース・ガスがエチレン、メチルシラン、またはメタンである請求項7に記載の方法。
- 前記ソース・ガスが希釈せずに使用され、または不活性ガスと共に使用される請求項7または8に記載の方法。
- 前記不活性ガスがHe、Ar、N2、またはH2である請求項9記載の方法。
- 前記ソース・ガスが予混合され、または別々の流れとしてエピ反応器中に導入される請求項7〜10のいずれか1項に記載の方法。
- ステップ(c)が、前記SiGeベース領域上に絶縁体を形成するステップと、前記絶縁体にエミッタ・ウィンドウを開けるステップと、前記エミッタ・ウィンドウ中にポリシリコンを形成するステップと、前記ポリシリコンをエッチングするステップとを含む請求項1〜11のいずれか1項に記載の方法。
- ステップ(b)において、前記コレクタ領域および前記SiGeベース領域の炭素が、1×1019〜1×1020cm−3の濃度で、成長させられる、請求項1〜12のいずれか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/774,126 | 2001-01-30 | ||
US09/774,126 US6426265B1 (en) | 2001-01-30 | 2001-01-30 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002561270A Division JP4700897B2 (ja) | 2001-01-30 | 2001-11-23 | シリコン・ゲルマニウム・バイポーラ・トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008153684A true JP2008153684A (ja) | 2008-07-03 |
JP4917051B2 JP4917051B2 (ja) | 2012-04-18 |
Family
ID=25100308
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002561270A Expired - Fee Related JP4700897B2 (ja) | 2001-01-30 | 2001-11-23 | シリコン・ゲルマニウム・バイポーラ・トランジスタ |
JP2008018552A Expired - Fee Related JP4917051B2 (ja) | 2001-01-30 | 2008-01-30 | シリコン・ゲルマニウム・バイポーラ・トランジスタの製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002561270A Expired - Fee Related JP4700897B2 (ja) | 2001-01-30 | 2001-11-23 | シリコン・ゲルマニウム・バイポーラ・トランジスタ |
Country Status (11)
Country | Link |
---|---|
US (4) | US6426265B1 (ja) |
EP (1) | EP1356504A1 (ja) |
JP (2) | JP4700897B2 (ja) |
KR (1) | KR100497103B1 (ja) |
CN (1) | CN1322564C (ja) |
CZ (1) | CZ20032066A3 (ja) |
HU (1) | HUP0302872A3 (ja) |
IL (2) | IL156930A0 (ja) |
PL (1) | PL203317B1 (ja) |
TW (1) | TW522494B (ja) |
WO (1) | WO2002061820A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108475624A (zh) * | 2016-02-29 | 2018-08-31 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置以及记录介质 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6426265B1 (en) * | 2001-01-30 | 2002-07-30 | International Business Machines Corporation | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
US6534371B2 (en) * | 2001-06-11 | 2003-03-18 | International Business Machines Corporation | C implants for improved SiGe bipolar yield |
US7087979B1 (en) * | 2001-06-15 | 2006-08-08 | National Semiconductor Corporation | Bipolar transistor with an ultra small self-aligned polysilicon emitter |
US6784065B1 (en) | 2001-06-15 | 2004-08-31 | National Semiconductor Corporation | Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor |
US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
EP1415332B1 (de) * | 2001-07-27 | 2012-01-25 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | Verfahren und Vorrichtung zum Herstellen dünner epitaktischer Halbleiterschichten |
US6706583B1 (en) * | 2001-10-19 | 2004-03-16 | Lsi Logic Corporation | High speed low noise transistor |
KR20030035152A (ko) * | 2001-10-30 | 2003-05-09 | 주식회사 하이닉스반도체 | 반도체웨이퍼 제조방법 |
US6870204B2 (en) * | 2001-11-21 | 2005-03-22 | Astralux, Inc. | Heterojunction bipolar transistor containing at least one silicon carbide layer |
DE10160509A1 (de) * | 2001-11-30 | 2003-06-12 | Ihp Gmbh | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
US20030111013A1 (en) * | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
JP3914064B2 (ja) * | 2002-02-28 | 2007-05-16 | 富士通株式会社 | 混晶膜の成長方法及び装置 |
US6593640B1 (en) * | 2002-04-01 | 2003-07-15 | Maxim Integrated Products, Inc. | Bipolar transistor and methods of forming bipolar transistors |
TWI284348B (en) * | 2002-07-01 | 2007-07-21 | Macronix Int Co Ltd | Method for fabricating raised source/drain of semiconductor device |
US6699765B1 (en) * | 2002-08-29 | 2004-03-02 | Micrel, Inc. | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
US6972441B2 (en) * | 2002-11-27 | 2005-12-06 | Intel Corporation | Silicon germanium heterojunction bipolar transistor with step-up carbon profile |
US6995427B2 (en) * | 2003-01-29 | 2006-02-07 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same |
US7517768B2 (en) * | 2003-03-31 | 2009-04-14 | Intel Corporation | Method for fabricating a heterojunction bipolar transistor |
DE10316531A1 (de) * | 2003-04-10 | 2004-07-08 | Infineon Technologies Ag | Bipolar-Transistor |
US7157379B2 (en) * | 2003-09-23 | 2007-01-02 | Intel Corporation | Strained semiconductor structures |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US20050114227A1 (en) * | 2003-11-25 | 2005-05-26 | Carter Craig M. | Web-based tool for maximizing value from surplus assets |
US7115955B2 (en) * | 2004-07-30 | 2006-10-03 | International Business Machines Corporation | Semiconductor device having a strained raised source/drain |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
KR100833491B1 (ko) * | 2005-12-08 | 2008-05-29 | 한국전자통신연구원 | 임베디드 상변화 메모리 및 그 제조방법 |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
CN103981568A (zh) * | 2006-07-31 | 2014-08-13 | 应用材料公司 | 形成含碳外延硅层的方法 |
KR101369355B1 (ko) * | 2006-07-31 | 2014-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 층 형성 동안에 형태를 제어하는 방법 |
US8394196B2 (en) * | 2006-12-12 | 2013-03-12 | Applied Materials, Inc. | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon |
US7960236B2 (en) * | 2006-12-12 | 2011-06-14 | Applied Materials, Inc. | Phosphorus containing Si epitaxial layers in N-type source/drain junctions |
JP2008235560A (ja) | 2007-03-20 | 2008-10-02 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ |
US8130737B2 (en) * | 2008-03-12 | 2012-03-06 | Samsung Electronics Co., Ltd. | System and method for a multiple hop wireless network |
US8476686B2 (en) | 2008-07-09 | 2013-07-02 | Infineon Technologies Ag | Memory device and method for making same |
US8343825B2 (en) | 2011-01-19 | 2013-01-01 | International Business Machines Corporation | Reducing dislocation formation in semiconductor devices through targeted carbon implantation |
US9064796B2 (en) | 2012-08-13 | 2015-06-23 | Infineon Technologies Ag | Semiconductor device and method of making the same |
WO2015094208A1 (en) | 2013-12-18 | 2015-06-25 | Intel Corporation | Partial layer transfer system and method |
CN103943670B (zh) * | 2014-04-12 | 2016-10-05 | 北京工业大学 | 超结集电区应变硅异质结双极晶体管 |
CN107046058A (zh) * | 2017-04-13 | 2017-08-15 | 中国电子科技集团公司第二十四研究所 | 一种具有应变Si组合发射区的异质结双极晶体管及其制备方法 |
FR3115393A1 (fr) * | 2020-10-19 | 2022-04-22 | Stmicroelectronics (Crolles 2) Sas | Transistor bipolaire et procédé de fabrication |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04230037A (ja) * | 1990-05-31 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | インサイチュ・ドープされたn型シリコン層の付着方法およびNPNトランジスタ |
WO1998026457A1 (de) * | 1996-12-09 | 1998-06-18 | Institut für Halbleiterphysik Frankfurt (Oder) GmbH | Silizium-germanium-heterobipolartransistor und verfahren zur herstellung der epitaktischen einzelschichten eines derartigen transistors |
JPH11283993A (ja) * | 1998-03-31 | 1999-10-15 | Mitsubishi Heavy Ind Ltd | 半導体装置の製造方法 |
JPH11354537A (ja) * | 1998-06-05 | 1999-12-24 | St Microelectronics Sa | エピタキシャルベ―スをもつたて形バイポ―ラトランジスタの真性コレクタの選択ド―ピングを行う方法 |
JP2000077425A (ja) * | 1998-09-03 | 2000-03-14 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタ |
JP4700897B2 (ja) * | 2001-01-30 | 2011-06-15 | インターナショナル・ビジネス・マシーンズ・コーポレーション | シリコン・ゲルマニウム・バイポーラ・トランジスタ |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4887134A (en) | 1986-09-26 | 1989-12-12 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded |
US5514885A (en) * | 1986-10-09 | 1996-05-07 | Myrick; James J. | SOI methods and apparatus |
JP2569058B2 (ja) * | 1987-07-10 | 1997-01-08 | 株式会社日立製作所 | 半導体装置 |
US5159424A (en) | 1988-12-10 | 1992-10-27 | Canon Kabushiki Kaisha | Semiconductor device having a high current gain and a higher ge amount at the base region than at the emitter and collector region, and photoelectric conversion apparatus using the device |
US5140400A (en) * | 1989-03-29 | 1992-08-18 | Canon Kabushiki Kaisha | Semiconductor device and photoelectric converting apparatus using the same |
US5321302A (en) | 1990-07-25 | 1994-06-14 | Nec Corporation | Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency |
JPH04106980A (ja) * | 1990-08-24 | 1992-04-08 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH05144834A (ja) | 1991-03-20 | 1993-06-11 | Hitachi Ltd | バイポーラトランジスタ及びその製造方法 |
US5241214A (en) * | 1991-04-29 | 1993-08-31 | Massachusetts Institute Of Technology | Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof |
JPH05102177A (ja) * | 1991-10-02 | 1993-04-23 | Hitachi Ltd | 半導体集積回路装置及びこれを用いた電子計算機 |
EP0609351A4 (en) | 1991-10-23 | 1995-01-04 | Microunity Systems Eng | BOPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND BREAKTHROUGH CHARACTERISTICS. |
JPH05198787A (ja) * | 1991-11-08 | 1993-08-06 | Canon Inc | 固体撮像装置及びその製造方法 |
JP3077841B2 (ja) * | 1992-01-20 | 2000-08-21 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP2582519B2 (ja) | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
US5272096A (en) * | 1992-09-29 | 1993-12-21 | Motorola, Inc. | Method for making a bipolar transistor having a silicon carbide layer |
US5523243A (en) * | 1992-12-21 | 1996-06-04 | International Business Machines Corporation | Method of fabricating a triple heterojunction bipolar transistor |
US5320972A (en) | 1993-01-07 | 1994-06-14 | Northern Telecom Limited | Method of forming a bipolar transistor |
JP3156436B2 (ja) * | 1993-04-05 | 2001-04-16 | 日本電気株式会社 | ヘテロ接合バイポーラトランジスタ |
JPH0750410A (ja) | 1993-08-06 | 1995-02-21 | Hitachi Ltd | 半導体結晶積層体及びその形成方法並びに半導体装置 |
JPH07115184A (ja) | 1993-08-24 | 1995-05-02 | Canon Inc | 積層型固体撮像装置及びその製造方法 |
US5360986A (en) * | 1993-10-05 | 1994-11-01 | Motorola, Inc. | Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method |
JPH07153928A (ja) * | 1993-11-26 | 1995-06-16 | Toshiba Corp | 半導体基板およびその製造方法 |
US5422502A (en) * | 1993-12-09 | 1995-06-06 | Northern Telecom Limited | Lateral bipolar transistor |
US5734193A (en) * | 1994-01-24 | 1998-03-31 | The United States Of America As Represented By The Secretary Of The Air Force | Termal shunt stabilization of multiple part heterojunction bipolar transistors |
US5646073A (en) | 1995-01-18 | 1997-07-08 | Lsi Logic Corporation | Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product |
US5846867A (en) * | 1995-12-20 | 1998-12-08 | Sony Corporation | Method of producing Si-Ge base heterojunction bipolar device |
KR970054343A (ko) * | 1995-12-20 | 1997-07-31 | 이준 | 규소/규소게르마늄 쌍극자 트랜지스터 제조방법 |
DE19652423A1 (de) | 1996-12-09 | 1998-06-10 | Inst Halbleiterphysik Gmbh | Silizium-Germanium-Heterobipolartransistor und Verfahren zur Herstellung der epitaktischen Einzelschichten eines derartigen Transistors |
US6750484B2 (en) * | 1996-12-09 | 2004-06-15 | Nokia Corporation | Silicon germanium hetero bipolar transistor |
US5963817A (en) | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
US6154475A (en) * | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
DE69935024T2 (de) * | 1998-02-20 | 2007-05-24 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleiterbauelement mit Bipolartransistor |
US6815303B2 (en) * | 1998-04-29 | 2004-11-09 | Micron Technology, Inc. | Bipolar transistors with low-resistance emitter contacts |
US6087683A (en) * | 1998-07-31 | 2000-07-11 | Lucent Technologies | Silicon germanium heterostructure bipolar transistor with indium doped base |
JP2000068284A (ja) * | 1998-08-19 | 2000-03-03 | Sharp Corp | ヘテロ接合バイポーラトランジスタの製造方法及びパワーアンプ |
DE19857640A1 (de) * | 1998-12-14 | 2000-06-15 | Inst Halbleiterphysik Gmbh | Bipolartransistor und Verfahren zu seiner Herstellung |
JP3592981B2 (ja) * | 1999-01-14 | 2004-11-24 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6258695B1 (en) * | 1999-02-04 | 2001-07-10 | International Business Machines Corporation | Dislocation suppression by carbon incorporation |
DE60042045D1 (de) * | 1999-06-22 | 2009-06-04 | Panasonic Corp | Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren |
US6169007B1 (en) * | 1999-06-25 | 2001-01-02 | Applied Micro Circuits Corporation | Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback |
DE60036594T2 (de) * | 1999-11-15 | 2008-01-31 | Matsushita Electric Industrial Co., Ltd., Kadoma | Feldeffekt-Halbleiterbauelement |
US6461925B1 (en) * | 2000-03-30 | 2002-10-08 | Motorola, Inc. | Method of manufacturing a heterojunction BiCMOS integrated circuit |
US6316795B1 (en) * | 2000-04-03 | 2001-11-13 | Hrl Laboratories, Llc | Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors |
US6333235B1 (en) * | 2000-04-12 | 2001-12-25 | Industrial Technologyresearch Institute | Method for forming SiGe bipolar transistor |
US6417058B1 (en) * | 2000-06-14 | 2002-07-09 | Sony Corporation | SiGe/poly for low resistance extrinsic base npn transistor |
US20020071277A1 (en) * | 2000-08-12 | 2002-06-13 | Starner Thad E. | System and method for capturing an image |
US6894366B2 (en) * | 2000-10-10 | 2005-05-17 | Texas Instruments Incorporated | Bipolar junction transistor with a counterdoped collector region |
US6396107B1 (en) * | 2000-11-20 | 2002-05-28 | International Business Machines Corporation | Trench-defined silicon germanium ESD diode network |
US6440811B1 (en) * | 2000-12-21 | 2002-08-27 | International Business Machines Corporation | Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme |
US6509242B2 (en) * | 2001-01-12 | 2003-01-21 | Agere Systems Inc. | Heterojunction bipolar transistor |
US6674102B2 (en) * | 2001-01-25 | 2004-01-06 | International Business Machines Corporation | Sti pull-down to control SiGe facet growth |
US6465870B2 (en) * | 2001-01-25 | 2002-10-15 | International Business Machines Corporation | ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region |
US6534371B2 (en) * | 2001-06-11 | 2003-03-18 | International Business Machines Corporation | C implants for improved SiGe bipolar yield |
-
2001
- 2001-01-30 US US09/774,126 patent/US6426265B1/en not_active Expired - Lifetime
- 2001-11-23 WO PCT/GB2001/005149 patent/WO2002061820A1/en active IP Right Grant
- 2001-11-23 CZ CZ20032066A patent/CZ20032066A3/cs unknown
- 2001-11-23 HU HU0302872A patent/HUP0302872A3/hu unknown
- 2001-11-23 PL PL362710A patent/PL203317B1/pl not_active IP Right Cessation
- 2001-11-23 JP JP2002561270A patent/JP4700897B2/ja not_active Expired - Fee Related
- 2001-11-23 IL IL15693001A patent/IL156930A0/xx unknown
- 2001-11-23 KR KR10-2003-7009481A patent/KR100497103B1/ko not_active IP Right Cessation
- 2001-11-23 CN CNB018223753A patent/CN1322564C/zh not_active Expired - Lifetime
- 2001-11-23 EP EP01273555A patent/EP1356504A1/en not_active Withdrawn
-
2002
- 2002-01-25 TW TW091101257A patent/TW522494B/zh not_active IP Right Cessation
- 2002-04-15 US US10/122,857 patent/US6815802B2/en not_active Expired - Lifetime
-
2003
- 2003-07-15 IL IL156930A patent/IL156930A/en not_active IP Right Cessation
-
2004
- 2004-09-29 US US10/953,378 patent/US7173274B2/en not_active Expired - Lifetime
-
2006
- 2006-11-22 US US11/562,735 patent/US7713829B2/en not_active Expired - Fee Related
-
2008
- 2008-01-30 JP JP2008018552A patent/JP4917051B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04230037A (ja) * | 1990-05-31 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | インサイチュ・ドープされたn型シリコン層の付着方法およびNPNトランジスタ |
WO1998026457A1 (de) * | 1996-12-09 | 1998-06-18 | Institut für Halbleiterphysik Frankfurt (Oder) GmbH | Silizium-germanium-heterobipolartransistor und verfahren zur herstellung der epitaktischen einzelschichten eines derartigen transistors |
JP2001505717A (ja) * | 1996-12-09 | 2001-04-24 | インスティテュート フュア ハルブレイテルフィジーク フランクフルト(オーデル)ゲーエムベーハー | 高周波で使用されるシリコンゲルマニウムヘテロバイポーラトランジスタとかかるトランジスタのエピタキシャル層の各々を作製する方法 |
JPH11283993A (ja) * | 1998-03-31 | 1999-10-15 | Mitsubishi Heavy Ind Ltd | 半導体装置の製造方法 |
JPH11354537A (ja) * | 1998-06-05 | 1999-12-24 | St Microelectronics Sa | エピタキシャルベ―スをもつたて形バイポ―ラトランジスタの真性コレクタの選択ド―ピングを行う方法 |
JP2000077425A (ja) * | 1998-09-03 | 2000-03-14 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタ |
JP4700897B2 (ja) * | 2001-01-30 | 2011-06-15 | インターナショナル・ビジネス・マシーンズ・コーポレーション | シリコン・ゲルマニウム・バイポーラ・トランジスタ |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108475624A (zh) * | 2016-02-29 | 2018-08-31 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置以及记录介质 |
KR20180104709A (ko) * | 2016-02-29 | 2018-09-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
JPWO2017149604A1 (ja) * | 2016-02-29 | 2018-10-18 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、および記録媒体 |
KR102130459B1 (ko) * | 2016-02-29 | 2020-07-07 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
CN108475624B (zh) * | 2016-02-29 | 2023-10-20 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理装置以及记录介质 |
Also Published As
Publication number | Publication date |
---|---|
KR100497103B1 (ko) | 2005-06-23 |
US6426265B1 (en) | 2002-07-30 |
IL156930A (en) | 2010-04-15 |
WO2002061820A1 (en) | 2002-08-08 |
TW522494B (en) | 2003-03-01 |
US20080124881A1 (en) | 2008-05-29 |
US7173274B2 (en) | 2007-02-06 |
HUP0302872A3 (en) | 2004-07-28 |
US7713829B2 (en) | 2010-05-11 |
US6815802B2 (en) | 2004-11-09 |
US20020100917A1 (en) | 2002-08-01 |
CN1502124A (zh) | 2004-06-02 |
JP4700897B2 (ja) | 2011-06-15 |
JP4917051B2 (ja) | 2012-04-18 |
EP1356504A1 (en) | 2003-10-29 |
CZ20032066A3 (cs) | 2003-11-12 |
US20020121676A1 (en) | 2002-09-05 |
PL203317B1 (pl) | 2009-09-30 |
US20050054171A1 (en) | 2005-03-10 |
CN1322564C (zh) | 2007-06-20 |
PL362710A1 (en) | 2004-11-02 |
KR20030069215A (ko) | 2003-08-25 |
JP2004520711A (ja) | 2004-07-08 |
HUP0302872A2 (hu) | 2003-12-29 |
IL156930A0 (en) | 2004-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4917051B2 (ja) | シリコン・ゲルマニウム・バイポーラ・トランジスタの製造方法 | |
JP4060580B2 (ja) | ヘテロ接合バイポーラトランジスタ | |
US6977398B2 (en) | C implants for improved SiGe bipolar yield | |
JP2000031155A (ja) | 低雑音たて形バイポ―ラトランジスタとその製造方法 | |
JPH11354537A (ja) | エピタキシャルベ―スをもつたて形バイポ―ラトランジスタの真性コレクタの選択ド―ピングを行う方法 | |
JP3600591B2 (ja) | 半導体装置の製造方法 | |
US7538004B2 (en) | Method of fabrication for SiGe heterojunction bipolar transistor (HBT) | |
JP3549408B2 (ja) | バイポーラトランジスタ | |
JP3515944B2 (ja) | ヘテロバイポーラトランジスタ | |
US7012009B2 (en) | Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process | |
KR910005391B1 (ko) | 바이폴라 트랜지스터 및 그의 제조방법 | |
JP4823154B2 (ja) | へテロ接合バイポーラトランジスタ | |
JP2003297761A (ja) | エピタキシャル成長方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20090108 |
|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20090115 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20090126 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090212 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20090728 |
|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20090730 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090728 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110810 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120104 |
|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20120104 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120125 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150203 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4917051 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |