JP2008147415A5 - - Google Patents

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Publication number
JP2008147415A5
JP2008147415A5 JP2006332718A JP2006332718A JP2008147415A5 JP 2008147415 A5 JP2008147415 A5 JP 2008147415A5 JP 2006332718 A JP2006332718 A JP 2006332718A JP 2006332718 A JP2006332718 A JP 2006332718A JP 2008147415 A5 JP2008147415 A5 JP 2008147415A5
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JP
Japan
Prior art keywords
region
base region
conductivity type
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006332718A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008147415A (ja
JP5261927B2 (ja
Filing date
Publication date
Priority claimed from JP2006332718A external-priority patent/JP5261927B2/ja
Priority to JP2006332718A priority Critical patent/JP5261927B2/ja
Application filed filed Critical
Priority to US11/943,614 priority patent/US7719086B2/en
Publication of JP2008147415A publication Critical patent/JP2008147415A/ja
Publication of JP2008147415A5 publication Critical patent/JP2008147415A5/ja
Priority to US12/662,680 priority patent/US7944022B2/en
Priority to US12/963,665 priority patent/US8093131B2/en
Priority to US13/064,430 priority patent/US8304858B2/en
Publication of JP5261927B2 publication Critical patent/JP5261927B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006332718A 2006-12-11 2006-12-11 半導体装置 Expired - Fee Related JP5261927B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006332718A JP5261927B2 (ja) 2006-12-11 2006-12-11 半導体装置
US11/943,614 US7719086B2 (en) 2006-12-11 2007-11-21 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
US12/662,680 US7944022B2 (en) 2006-12-11 2010-04-28 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
US12/963,665 US8093131B2 (en) 2006-12-11 2010-12-09 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
US13/064,430 US8304858B2 (en) 2006-12-11 2011-03-24 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006332718A JP5261927B2 (ja) 2006-12-11 2006-12-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2008147415A JP2008147415A (ja) 2008-06-26
JP2008147415A5 true JP2008147415A5 (enExample) 2009-08-20
JP5261927B2 JP5261927B2 (ja) 2013-08-14

Family

ID=39496984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006332718A Expired - Fee Related JP5261927B2 (ja) 2006-12-11 2006-12-11 半導体装置

Country Status (2)

Country Link
US (4) US7719086B2 (enExample)
JP (1) JP5261927B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5261927B2 (ja) * 2006-12-11 2013-08-14 パナソニック株式会社 半導体装置
JP5272410B2 (ja) * 2008-01-11 2013-08-28 富士電機株式会社 半導体装置およびその製造方法
TWI387106B (zh) * 2008-10-16 2013-02-21 Vanguard Int Semiconduct Corp 閘極絕緣雙接面電晶體（ｉｇｂｔ）靜電放電防護元件
JP2010165978A (ja) * 2009-01-19 2010-07-29 Panasonic Corp 半導体装置およびその製造方法
US8049307B2 (en) 2009-01-23 2011-11-01 Vanguard International Semiconductor Corporation Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices
JP4857353B2 (ja) * 2009-03-02 2012-01-18 株式会社日立製作所 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
JP5002693B2 (ja) 2010-09-06 2012-08-15 株式会社東芝 半導体装置
JP2012099517A (ja) 2010-10-29 2012-05-24 Sony Corp 半導体装置及び半導体装置の製造方法
CN102856193B (zh) * 2011-06-27 2015-05-13 中国科学院微电子研究所 Igbt器件及其制作方法
CN102856192B (zh) * 2011-06-27 2015-05-13 中国科学院微电子研究所 Igbt器件及其制作方法
KR101534106B1 (ko) 2011-07-05 2015-07-06 미쓰비시덴키 가부시키가이샤 반도체장치
US8581339B2 (en) * 2011-08-08 2013-11-12 Macronix International Co., Ltd. Structure of NPN-BJT for improving punch through between collector and emitter
JP2013182905A (ja) * 2012-02-29 2013-09-12 Toshiba Corp 半導体装置
WO2014033991A1 (ja) * 2012-08-30 2014-03-06 パナソニック株式会社 半導体装置
CN104347397B (zh) 2013-07-23 2018-02-06 无锡华润上华科技有限公司 注入增强型绝缘栅双极型晶体管的制造方法
JP2015026751A (ja) * 2013-07-29 2015-02-05 株式会社日立製作所 横型バイポーラトランジスタおよびその製造方法
CN103633087B (zh) * 2013-12-19 2016-08-17 电子科技大学 一种具有esd保护功能的强抗闩锁可控ligbt器件
US9960269B2 (en) * 2016-02-02 2018-05-01 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
CN108242394A (zh) * 2016-12-27 2018-07-03 全球能源互联网研究院 一种碳化硅mos栅控功率器件及其制备方法
CN109564877B (zh) * 2017-07-14 2023-08-25 新唐科技日本株式会社 半导体装置
CN107919391B (zh) * 2017-11-16 2020-07-03 重庆邮电大学 一种具有槽型氧化层和垂直缓冲层的rc-ligbt
CN108321195B (zh) * 2018-02-05 2020-05-22 电子科技大学 一种具有阳极夹断槽的短路阳极soi ligbt
JP7279846B2 (ja) * 2020-02-18 2023-05-23 富士電機株式会社 半導体装置
CN111682062A (zh) * 2020-06-24 2020-09-18 全球能源互联网研究院有限公司 一种igbt器件的背面结构及其制备方法、igbt器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801420A (en) * 1994-09-08 1998-09-01 Fuji Electric Co. Ltd. Lateral semiconductor arrangement for power ICS
JPH08130312A (ja) 1994-09-08 1996-05-21 Fuji Electric Co Ltd 横型半導体装置およびその使用方法
JPH10150193A (ja) * 1996-09-17 1998-06-02 Toshiba Corp 高耐圧半導体装置
JPH10242456A (ja) 1997-02-28 1998-09-11 Toshiba Corp 横型絶縁ゲートバイポーラトランジスタ
JP3473460B2 (ja) * 1998-11-20 2003-12-02 富士電機株式会社 横型半導体装置
JP2002270844A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体装置及びその製造方法
JP4354876B2 (ja) * 2004-06-10 2009-10-28 パナソニック株式会社 半導体装置
JP4387291B2 (ja) * 2004-12-06 2009-12-16 パナソニック株式会社 横型半導体デバイスおよびその製造方法
JP5261927B2 (ja) * 2006-12-11 2013-08-14 パナソニック株式会社 半導体装置

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