JP2004289154A5 - - Google Patents

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Publication number
JP2004289154A5
JP2004289154A5 JP2004079351A JP2004079351A JP2004289154A5 JP 2004289154 A5 JP2004289154 A5 JP 2004289154A5 JP 2004079351 A JP2004079351 A JP 2004079351A JP 2004079351 A JP2004079351 A JP 2004079351A JP 2004289154 A5 JP2004289154 A5 JP 2004289154A5
Authority
JP
Japan
Prior art keywords
ion
fluorine
implantation
ions
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2004079351A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004289154A (ja
Filing date
Publication date
Priority claimed from US10/393,749 external-priority patent/US6808997B2/en
Application filed filed Critical
Publication of JP2004289154A publication Critical patent/JP2004289154A/ja
Publication of JP2004289154A5 publication Critical patent/JP2004289154A5/ja
Abandoned legal-status Critical Current

Links

JP2004079351A 2003-03-21 2004-03-19 超浅型接合のための接合狭小化用相補インプラント Abandoned JP2004289154A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/393,749 US6808997B2 (en) 2003-03-21 2003-03-21 Complementary junction-narrowing implants for ultra-shallow junctions

Publications (2)

Publication Number Publication Date
JP2004289154A JP2004289154A (ja) 2004-10-14
JP2004289154A5 true JP2004289154A5 (enExample) 2007-04-12

Family

ID=32824912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004079351A Abandoned JP2004289154A (ja) 2003-03-21 2004-03-19 超浅型接合のための接合狭小化用相補インプラント

Country Status (4)

Country Link
US (2) US6808997B2 (enExample)
EP (1) EP1460680B1 (enExample)
JP (1) JP2004289154A (enExample)
DE (1) DE602004031065D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050260838A1 (en) * 2002-05-10 2005-11-24 Varian Semiconductor Equipment Associates, Inc. Methods and systems for dopant profiling
US6767809B2 (en) * 2002-11-19 2004-07-27 Silterra Malayisa Sdn. Bhd. Method of forming ultra shallow junctions
CN1253929C (zh) * 2003-03-04 2006-04-26 松下电器产业株式会社 半导体装置及其制造方法
US20060017079A1 (en) * 2004-07-21 2006-01-26 Srinivasan Chakravarthi N-type transistor with antimony-doped ultra shallow source and drain
US7482255B2 (en) * 2004-12-17 2009-01-27 Houda Graoui Method of ion implantation to reduce transient enhanced diffusion
CN101207020B (zh) * 2006-12-22 2010-09-29 中芯国际集成电路制造(上海)有限公司 形成超浅结的方法
US8664073B2 (en) 2007-03-28 2014-03-04 United Microelectronics Corp. Method for fabricating field-effect transistor
US7888223B2 (en) * 2007-03-28 2011-02-15 United Microelectronics Corp. Method for fabricating P-channel field-effect transistor (FET)
US20090065820A1 (en) * 2007-09-06 2009-03-12 Lu-Yang Kao Method and structure for simultaneously fabricating selective film and spacer
US8232605B2 (en) * 2008-12-17 2012-07-31 United Microelectronics Corp. Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device
JP2012099510A (ja) * 2009-03-09 2012-05-24 Toshiba Corp 半導体装置およびその製造方法
US8178430B2 (en) * 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
US8269275B2 (en) * 2009-10-21 2012-09-18 Broadcom Corporation Method for fabricating a MOS transistor with reduced channel length variation and related structure
US8564063B2 (en) 2010-12-07 2013-10-22 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
CN102637646B (zh) * 2011-02-10 2014-04-23 上海宏力半导体制造有限公司 存储器制备方法
US8772118B2 (en) 2011-07-08 2014-07-08 Texas Instruments Incorporated Offset screen for shallow source/drain extension implants, and processes and integrated circuits
US9455321B1 (en) 2015-05-06 2016-09-27 United Microelectronics Corp. Method for fabricating semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079506A (ja) * 1996-02-07 1998-03-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR0183645B1 (ko) 1996-03-26 1999-03-20 이대원 다층 구조의 도금층을 구비한 반도체 리드 프레임
WO1997042652A1 (en) 1996-05-08 1997-11-13 Advanced Micro Devices, Inc. Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion
US5793090A (en) 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance
US6069062A (en) 1997-09-16 2000-05-30 Varian Semiconductor Equipment Associates, Inc. Methods for forming shallow junctions in semiconductor wafers
US6037640A (en) * 1997-11-12 2000-03-14 International Business Machines Corporation Ultra-shallow semiconductor junction formation
US6087247A (en) 1998-01-29 2000-07-11 Varian Semiconductor Equipment Associates, Inc. Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing
US6355543B1 (en) 1998-09-29 2002-03-12 Advanced Micro Devices, Inc. Laser annealing for forming shallow source/drain extension for MOS transistor
US6180476B1 (en) 1998-11-06 2001-01-30 Advanced Micro Devices, Inc. Dual amorphization implant process for ultra-shallow drain and source extensions
KR100318459B1 (ko) 1998-12-22 2002-02-19 박종섭 티타늄폴리사이드게이트전극형성방법
AU781979B2 (en) * 2000-01-26 2005-06-23 Carl Zeiss Vision Australia Holdings Ltd Anti-static, anti-reflection coating
US6265255B1 (en) 2000-03-17 2001-07-24 United Microelectronics Corp. Ultra-shallow junction formation for deep sub-micron complementary metal-oxide-semiconductor
US6358823B1 (en) 2000-04-12 2002-03-19 Institut Fuer Halbleiterphysik Frankfurt (Oder) Gmbh. Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom
JP2002076332A (ja) * 2000-08-24 2002-03-15 Hitachi Ltd 絶縁ゲート型電界効果トランジスタ及びその製造方法
US6534373B1 (en) * 2001-03-26 2003-03-18 Advanced Micro Devices, Inc. MOS transistor with reduced floating body effect
US6458643B1 (en) * 2001-07-03 2002-10-01 Macronix International Co. Ltd. Method of fabricating a MOS device with an ultra-shallow junction
CN1253929C (zh) * 2003-03-04 2006-04-26 松下电器产业株式会社 半导体装置及其制造方法

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