DE602004031065D1 - Komplementäre Implantationen zur Vermeidung der Ausweitung des Übergangs für die Herstellung ultraflacher Übergänge - Google Patents

Komplementäre Implantationen zur Vermeidung der Ausweitung des Übergangs für die Herstellung ultraflacher Übergänge

Info

Publication number
DE602004031065D1
DE602004031065D1 DE602004031065T DE602004031065T DE602004031065D1 DE 602004031065 D1 DE602004031065 D1 DE 602004031065D1 DE 602004031065 T DE602004031065 T DE 602004031065T DE 602004031065 T DE602004031065 T DE 602004031065T DE 602004031065 D1 DE602004031065 D1 DE 602004031065D1
Authority
DE
Germany
Prior art keywords
fabrication
ultra
transition
extension
avoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004031065T
Other languages
German (de)
English (en)
Inventor
Amitabh Jain
Stephanie W Butler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE602004031065D1 publication Critical patent/DE602004031065D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE602004031065T 2003-03-21 2004-03-18 Komplementäre Implantationen zur Vermeidung der Ausweitung des Übergangs für die Herstellung ultraflacher Übergänge Expired - Lifetime DE602004031065D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/393,749 US6808997B2 (en) 2003-03-21 2003-03-21 Complementary junction-narrowing implants for ultra-shallow junctions

Publications (1)

Publication Number Publication Date
DE602004031065D1 true DE602004031065D1 (de) 2011-03-03

Family

ID=32824912

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004031065T Expired - Lifetime DE602004031065D1 (de) 2003-03-21 2004-03-18 Komplementäre Implantationen zur Vermeidung der Ausweitung des Übergangs für die Herstellung ultraflacher Übergänge

Country Status (4)

Country Link
US (2) US6808997B2 (enExample)
EP (1) EP1460680B1 (enExample)
JP (1) JP2004289154A (enExample)
DE (1) DE602004031065D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050260838A1 (en) * 2002-05-10 2005-11-24 Varian Semiconductor Equipment Associates, Inc. Methods and systems for dopant profiling
US6767809B2 (en) * 2002-11-19 2004-07-27 Silterra Malayisa Sdn. Bhd. Method of forming ultra shallow junctions
CN1253929C (zh) * 2003-03-04 2006-04-26 松下电器产业株式会社 半导体装置及其制造方法
US20060017079A1 (en) * 2004-07-21 2006-01-26 Srinivasan Chakravarthi N-type transistor with antimony-doped ultra shallow source and drain
US7482255B2 (en) * 2004-12-17 2009-01-27 Houda Graoui Method of ion implantation to reduce transient enhanced diffusion
CN101207020B (zh) * 2006-12-22 2010-09-29 中芯国际集成电路制造(上海)有限公司 形成超浅结的方法
US8664073B2 (en) 2007-03-28 2014-03-04 United Microelectronics Corp. Method for fabricating field-effect transistor
US7888223B2 (en) * 2007-03-28 2011-02-15 United Microelectronics Corp. Method for fabricating P-channel field-effect transistor (FET)
US20090065820A1 (en) * 2007-09-06 2009-03-12 Lu-Yang Kao Method and structure for simultaneously fabricating selective film and spacer
US8232605B2 (en) * 2008-12-17 2012-07-31 United Microelectronics Corp. Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device
JP2012099510A (ja) * 2009-03-09 2012-05-24 Toshiba Corp 半導体装置およびその製造方法
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
US8269275B2 (en) * 2009-10-21 2012-09-18 Broadcom Corporation Method for fabricating a MOS transistor with reduced channel length variation and related structure
US8564063B2 (en) 2010-12-07 2013-10-22 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
CN102637646B (zh) * 2011-02-10 2014-04-23 上海宏力半导体制造有限公司 存储器制备方法
US8772118B2 (en) 2011-07-08 2014-07-08 Texas Instruments Incorporated Offset screen for shallow source/drain extension implants, and processes and integrated circuits
US9455321B1 (en) 2015-05-06 2016-09-27 United Microelectronics Corp. Method for fabricating semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079506A (ja) * 1996-02-07 1998-03-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR0183645B1 (ko) 1996-03-26 1999-03-20 이대원 다층 구조의 도금층을 구비한 반도체 리드 프레임
EP0897594B1 (en) 1996-05-08 2004-07-28 Advanced Micro Devices, Inc. Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion
US5793090A (en) 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance
US6069062A (en) 1997-09-16 2000-05-30 Varian Semiconductor Equipment Associates, Inc. Methods for forming shallow junctions in semiconductor wafers
US6037640A (en) * 1997-11-12 2000-03-14 International Business Machines Corporation Ultra-shallow semiconductor junction formation
US6087247A (en) 1998-01-29 2000-07-11 Varian Semiconductor Equipment Associates, Inc. Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing
US6355543B1 (en) 1998-09-29 2002-03-12 Advanced Micro Devices, Inc. Laser annealing for forming shallow source/drain extension for MOS transistor
US6180476B1 (en) 1998-11-06 2001-01-30 Advanced Micro Devices, Inc. Dual amorphization implant process for ultra-shallow drain and source extensions
KR100318459B1 (ko) 1998-12-22 2002-02-19 박종섭 티타늄폴리사이드게이트전극형성방법
US6852406B2 (en) * 2000-01-26 2005-02-08 Sola International Holdings, Ltd. Anti-static, anti-reflection coating
US6265255B1 (en) 2000-03-17 2001-07-24 United Microelectronics Corp. Ultra-shallow junction formation for deep sub-micron complementary metal-oxide-semiconductor
US6358823B1 (en) 2000-04-12 2002-03-19 Institut Fuer Halbleiterphysik Frankfurt (Oder) Gmbh. Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom
JP2002076332A (ja) * 2000-08-24 2002-03-15 Hitachi Ltd 絶縁ゲート型電界効果トランジスタ及びその製造方法
US6534373B1 (en) * 2001-03-26 2003-03-18 Advanced Micro Devices, Inc. MOS transistor with reduced floating body effect
US6458643B1 (en) * 2001-07-03 2002-10-01 Macronix International Co. Ltd. Method of fabricating a MOS device with an ultra-shallow junction
CN1253929C (zh) * 2003-03-04 2006-04-26 松下电器产业株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
US6808997B2 (en) 2004-10-26
US20050042848A1 (en) 2005-02-24
US20040185633A1 (en) 2004-09-23
EP1460680A3 (en) 2005-08-17
EP1460680A2 (en) 2004-09-22
US7345355B2 (en) 2008-03-18
JP2004289154A (ja) 2004-10-14
EP1460680B1 (en) 2011-01-19

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