DE602004032093D1 - Polierzusammensetzung - Google Patents

Polierzusammensetzung

Info

Publication number
DE602004032093D1
DE602004032093D1 DE602004032093T DE602004032093T DE602004032093D1 DE 602004032093 D1 DE602004032093 D1 DE 602004032093D1 DE 602004032093 T DE602004032093 T DE 602004032093T DE 602004032093 T DE602004032093 T DE 602004032093T DE 602004032093 D1 DE602004032093 D1 DE 602004032093D1
Authority
DE
Germany
Prior art keywords
polishing composition
polishing
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004032093T
Other languages
English (en)
Inventor
Shuhei Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of DE602004032093D1 publication Critical patent/DE602004032093D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE602004032093T 2003-09-05 2004-09-03 Polierzusammensetzung Active DE602004032093D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003313838A JP4668528B2 (ja) 2003-09-05 2003-09-05 研磨用組成物

Publications (1)

Publication Number Publication Date
DE602004032093D1 true DE602004032093D1 (de) 2011-05-19

Family

ID=34131895

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004032093T Active DE602004032093D1 (de) 2003-09-05 2004-09-03 Polierzusammensetzung

Country Status (7)

Country Link
US (1) US7204865B2 (de)
EP (2) EP2236574A1 (de)
JP (1) JP4668528B2 (de)
KR (2) KR101163071B1 (de)
CN (1) CN100366693C (de)
DE (1) DE602004032093D1 (de)
TW (1) TWI359191B (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
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WO2004042812A1 (ja) * 2002-11-08 2004-05-21 Fujimi Incorporated 研磨用組成物及びリンス用組成物
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2006005246A (ja) * 2004-06-18 2006-01-05 Fujimi Inc リンス用組成物及びそれを用いたリンス方法
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4808394B2 (ja) * 2004-10-29 2011-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP2007103514A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨用組成物及び研磨方法
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN101195729A (zh) * 2006-12-08 2008-06-11 安集微电子（上海）有限公司 非离子型聚合物在自停止多晶硅抛光液制备及使用中的应用
JP2009035461A (ja) * 2007-08-03 2009-02-19 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
JP5491184B2 (ja) * 2007-09-28 2014-05-14 ニッタ・ハース株式会社 研磨用組成物
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
KR101485630B1 (ko) 2008-07-11 2015-01-22 니타 하스 인코포레이티드 연마 조성물
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8367594B2 (en) 2009-06-24 2013-02-05 Lam Research Corporation Damage free, high-efficiency, particle removal cleaner comprising polyvinyl alcohol particles
DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
CN102101976A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液
JP5492603B2 (ja) 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
SG188597A1 (en) 2010-09-24 2013-04-30 Fujimi Inc Composition for polishing and composition for rinsing
WO2012043418A1 (ja) * 2010-09-27 2012-04-05 株式会社 フジミインコーポレーテッド 表面処理組成物及びそれを用いた表面処理方法
SG192058A1 (en) * 2011-01-26 2013-08-30 Fujimi Inc Polishing composition, polishing method using same, and substrate production method
JP5939578B2 (ja) 2011-02-03 2016-06-22 ニッタ・ハース株式会社 研磨用組成物およびそれを用いた研磨方法
JP5687939B2 (ja) * 2011-03-31 2015-03-25 Hoya株式会社 マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、転写マスクの製造方法、及び半導体装置の製造方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JP2013004839A (ja) * 2011-06-20 2013-01-07 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法
KR101970858B1 (ko) * 2012-03-14 2019-04-19 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 반도체 기판의 제조 방법
DE112013004295T5 (de) * 2012-08-31 2015-05-13 Fujimi Incorporated Polierzusammensetzung und Verfahren zur Herstellung eines Substrats
KR101994084B1 (ko) * 2012-12-24 2019-06-28 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
JP6087143B2 (ja) * 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物
KR102226441B1 (ko) 2013-02-13 2021-03-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마용 조성물 제조 방법 및 연마물 제조 방법
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
JP6266337B2 (ja) * 2013-12-25 2018-01-24 ニッタ・ハース株式会社 半導体基板用濡れ剤及び研磨用組成物
JP6259723B2 (ja) * 2014-06-18 2018-01-10 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット
JP6559936B2 (ja) * 2014-09-05 2019-08-14 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物、リンス組成物、基板研磨方法およびリンス方法
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
CN107398780B (zh) * 2016-05-18 2020-03-31 上海新昇半导体科技有限公司 一种晶圆的双面抛光方法
KR102517629B1 (ko) * 2016-11-22 2023-04-05 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
KR102565682B1 (ko) * 2017-02-20 2023-08-11 가부시키가이샤 후지미인코퍼레이티드 실리콘 기판 중간 연마용 조성물 및 실리콘 기판 연마용 조성물 세트
JP6891107B2 (ja) * 2017-12-27 2021-06-18 ニッタ・デュポン株式会社 研磨用組成物
JP7166819B2 (ja) 2018-07-13 2022-11-08 Ｃｍｃマテリアルズ株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
CN113122145A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液
JP6761554B1 (ja) 2020-01-22 2020-09-23 日本酢ビ・ポバール株式会社 研磨用組成物
JP6884898B1 (ja) 2020-01-22 2021-06-09 日本酢ビ・ポバール株式会社 研磨用組成物
CN115662877B (zh) * 2022-09-08 2023-08-04 东海县太阳光新能源有限公司 一种单晶硅表面清洗方法
CN115873508A (zh) * 2022-12-26 2023-03-31 博力思(天津)电子科技有限公司 去除速率高且表面粗糙度低的SiC衬底抛光液及抛光工艺

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US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
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US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
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SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
JP3810172B2 (ja) 1997-03-05 2006-08-16 株式会社Ａｄｅｋａ シリコンウエーハ用研磨助剤
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2001110760A (ja) 1999-10-04 2001-04-20 Asahi Denka Kogyo Kk シリコンウェハー用研磨助剤
US6709981B2 (en) 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4212861B2 (ja) * 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
WO2004042812A1 (ja) * 2002-11-08 2004-05-21 Fujimi Incorporated 研磨用組成物及びリンス用組成物

Also Published As

Publication number Publication date
KR20120041727A (ko) 2012-05-02
US7204865B2 (en) 2007-04-17
EP1512732A1 (de) 2005-03-09
JP2005085858A (ja) 2005-03-31
CN1613941A (zh) 2005-05-11
EP1512732B1 (de) 2011-04-06
TWI359191B (en) 2012-03-01
JP4668528B2 (ja) 2011-04-13
KR101163071B1 (ko) 2012-07-06
US20050054203A1 (en) 2005-03-10
TW200517481A (en) 2005-06-01
CN100366693C (zh) 2008-02-06
EP2236574A1 (de) 2010-10-06
KR20050025090A (ko) 2005-03-11

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