JP2008135773A - シリコンウェーハの熱処理方法及び該方法で処理したシリコンウェーハ - Google Patents
シリコンウェーハの熱処理方法及び該方法で処理したシリコンウェーハ Download PDFInfo
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- JP2008135773A JP2008135773A JP2008005928A JP2008005928A JP2008135773A JP 2008135773 A JP2008135773 A JP 2008135773A JP 2008005928 A JP2008005928 A JP 2008005928A JP 2008005928 A JP2008005928 A JP 2008005928A JP 2008135773 A JP2008135773 A JP 2008135773A
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- silicon wafer
- wafer
- oxygen
- silicon
- heat treatment
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 101
- 239000010703 silicon Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000010438 heat treatment Methods 0.000 title claims abstract description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000001301 oxygen Substances 0.000 claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000006911 nucleation Effects 0.000 claims abstract description 17
- 238000001556 precipitation Methods 0.000 claims abstract description 14
- 238000010899 nucleation Methods 0.000 claims abstract description 13
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000007858 starting material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 113
- 239000013078 crystal Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 230000007547 defect Effects 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 238000005498 polishing Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000008034 disappearance Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】該製造方法は、シリコンウェーハを少なくとも一時的に酸素含有雰囲気に曝し、その際熱処理を、請求項1に定義した不等式:
を満足するように選択した温度で実施する。該シリコンウェーハは、バルク内に少なくとも107cm-3の酸素析出のための核形成中心の密度、及びウェーハ表側面に少なくとも1μmの厚さを有する核形成中心不含のゾーン並びにウェーハ厚さの少なくとも50%に相当する深さまで10000cm-3未満のCOPs密度を有する。
【選択図】なし
Description
該熱処理を、例えばポリシング後に行うことができる。このことは、特に、熱処理を、ウェーハ表面を粗面化しないか又は僅かに粗面化するにすぎない雰囲気下で、例えば酸素含有雰囲気下で実施する際に適当である。
Claims (9)
- シリコンウェーハを少なくとも一時的に酸素含有雰囲気に曝し、その際熱処理を、不等式:
- 前記方法のための出発物質として、酸素濃度[Oi]<7・1017at/cm3を有するシリコンウェーハを使用する、請求項1記載の方法。
- 前記方法のための出発物質として、160nm未満の平均COP直径を有するシリコンウェーハを使用する、請求項1又は2記載の方法。
- シリコンウェーハを所定の加熱速度で、温度が不等式(1)を満足する範囲内になるまで加熱し、引き続き温度を所定の時間この範囲内に保ちかつその後シリコンウェーハを所定の冷却速度で冷却する、請求項1から3までのいずれか1項記載の方法。
- シリコンウェーハの裏側面を少なくとも冷却過程中、窒素含有雰囲気に曝す、請求項1から4までのいずれか1項記載の方法。
- シリコンウェーハを熱処理後にポリシングする、請求項1から5までのいずれか1項記載の方法。
- バルク内に少なくとも107cm-3の酸素析出のための核形成中心の密度、及びウェーハ表側面に少なくとも1μmの厚さを有する核形成中心不含のゾーン、並びにウェーハ厚さの少なくとも50%に相当する深さまで10000cm-3未満のCOP密度を有することを特徴とするシリコンウェーハ。
- 空孔濃度の非対称プロフィールを有する、請求項7記載のシリコンウェーハ。
- 窒素を含有し、その際窒素濃度がウェーハ面に対して垂直な任意のグレードに沿って一定でない、請求項7記載のシリコンウェーハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10205084.8 | 2002-02-07 | ||
DE10205084A DE10205084B4 (de) | 2002-02-07 | 2002-02-07 | Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe |
Related Parent Applications (1)
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JP2003029617A Division JP2003297840A (ja) | 2002-02-07 | 2003-02-06 | シリコンウェーハの熱処理方法及び該方法で処理したシリコンウェーハ |
Publications (2)
Publication Number | Publication Date |
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JP2008135773A true JP2008135773A (ja) | 2008-06-12 |
JP5171277B2 JP5171277B2 (ja) | 2013-03-27 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2003029617A Withdrawn JP2003297840A (ja) | 2002-02-07 | 2003-02-06 | シリコンウェーハの熱処理方法及び該方法で処理したシリコンウェーハ |
JP2008005928A Expired - Lifetime JP5171277B2 (ja) | 2002-02-07 | 2008-01-15 | シリコンウェーハの熱処理方法及び該方法で処理したシリコンウェーハ |
Family Applications Before (1)
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JP2003029617A Withdrawn JP2003297840A (ja) | 2002-02-07 | 2003-02-06 | シリコンウェーハの熱処理方法及び該方法で処理したシリコンウェーハ |
Country Status (6)
Country | Link |
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US (1) | US6803331B2 (ja) |
JP (2) | JP2003297840A (ja) |
KR (1) | KR100547216B1 (ja) |
CN (1) | CN1217393C (ja) |
DE (1) | DE10205084B4 (ja) |
TW (1) | TW593795B (ja) |
Cited By (3)
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WO2015107875A1 (ja) * | 2014-01-16 | 2015-07-23 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
WO2015107874A1 (ja) * | 2014-01-16 | 2015-07-23 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
JP2016504759A (ja) * | 2012-11-19 | 2016-02-12 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
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KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
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JP5188673B2 (ja) * | 2005-06-09 | 2013-04-24 | 株式会社Sumco | Igbt用のシリコンウェーハ及びその製造方法 |
JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
US8476149B2 (en) * | 2008-07-31 | 2013-07-02 | Global Wafers Japan Co., Ltd. | Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process |
JP2010040587A (ja) * | 2008-07-31 | 2010-02-18 | Covalent Materials Corp | シリコンウェーハの製造方法 |
JP5560546B2 (ja) * | 2008-08-28 | 2014-07-30 | 株式会社Sumco | シリコンウェーハ及びその製造方法 |
JP2010056316A (ja) * | 2008-08-28 | 2010-03-11 | Sumco Corp | シリコンウェーハ及びその製造方法 |
US20120001301A1 (en) * | 2009-04-13 | 2012-01-05 | Shin-Etsu Handotai Co., Ltd. | Annealed wafer, method for producing annealed wafer and method for fabricating device |
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JP6711320B2 (ja) * | 2017-06-26 | 2020-06-17 | 株式会社Sumco | シリコンウェーハ |
EP3428325B1 (en) * | 2017-07-10 | 2019-09-11 | Siltronic AG | Semiconductor wafer made of single-crystal silicon and process for the production thereof |
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JP2016504759A (ja) * | 2012-11-19 | 2016-02-12 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
JP2019004173A (ja) * | 2012-11-19 | 2019-01-10 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
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US20030148634A1 (en) | 2003-08-07 |
JP5171277B2 (ja) | 2013-03-27 |
CN1437229A (zh) | 2003-08-20 |
JP2003297840A (ja) | 2003-10-17 |
KR100547216B1 (ko) | 2006-01-26 |
TW593795B (en) | 2004-06-21 |
DE10205084B4 (de) | 2008-10-16 |
KR20030067546A (ko) | 2003-08-14 |
US6803331B2 (en) | 2004-10-12 |
DE10205084A1 (de) | 2003-08-21 |
TW200303943A (en) | 2003-09-16 |
CN1217393C (zh) | 2005-08-31 |
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