JP2008077052A - 表面の相変換が可能なフォトレジスト - Google Patents
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 46
- 229920002120 photoresistant polymer Polymers 0.000 title abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 109
- 239000002253 acid Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 230000002378 acidificating effect Effects 0.000 claims abstract description 3
- 239000003513 alkali Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 99
- 230000008569 process Effects 0.000 claims description 49
- 239000002861 polymer material Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 39
- 238000000671 immersion lithography Methods 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 238000001459 lithography Methods 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 19
- 238000011161 development Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 5
- 150000008064 anhydrides Chemical group 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 125000000686 lactone group Chemical group 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 34
- 230000008859 change Effects 0.000 description 38
- 238000007654 immersion Methods 0.000 description 25
- 125000000217 alkyl group Chemical group 0.000 description 14
- 230000008901 benefit Effects 0.000 description 12
- 239000000243 solution Substances 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 125000004122 cyclic group Chemical group 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920001477 hydrophilic polymer Polymers 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 102100023698 C-C motif chemokine 17 Human genes 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101000978362 Homo sapiens C-C motif chemokine 17 Proteins 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000003010 ionic group Chemical group 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012667 polymer degradation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】酸と反応し、アルカリ溶液に可溶となる感光性ポリマーと、アルカリ可溶性ポリマー、酸可溶性ポリマー及び酸解離性ポリマーの少なくとも一つと、を含む。アルカリ可溶性ポリマーは、アルカリ性の現像液と反応して水溶性となる。酸可溶性ポリマーは、酸性の現像液と反応して水溶性になる。酸解離性ポリマーは、酸と反応して離脱基を脱離した後、水溶性になる。
【選択図】図14
Description
図1は、本発明のリソグラフィ方法100を簡単に示したフローチャート図である。このリソグラフィ方法100は、本発明の1又はそれ以上の実施形態により、長所が得られる一例である。この一例を簡単に説明するため、本発明ではリソグラフィ方法100を液浸リソグラフィ工程として説明する。リソグラフィ方法100により処理されたウエハ200の一例を示すために、リソグラフィ方法100についてさらに検討し、図2〜図4を用いて説明する。ウエハ200は、ポリマー、金属及び/又は誘電体を含んだ1以上の層をさらに含んだ基板212であってもよく、基板212はパターニングされるべきものである。
相変換型ポリマー層の異なる実施形態の各々は、上述のリソグラフィ工程において一つ又はそれ以上の長所がある。以下、それらの長所を説明する。しかし、その他の長所が存在する可能性もあり、相変換型ポリマー層の各実施形態は、必ずしも特別な長所が必要なわけではない。
本実施形態のレジスト(214、314、414、514、614及び/又は714)は、少なくとも2種類の材料、すなわち標準的なレジストポリマー材料と相変換型ポリマー材料とを含む。標準的なレジストポリマー材料は、酸に反応してアルカリ溶液に溶解しうる。標準的なレジストポリマー材料は、酸を発生させる光酸発生剤(Photo Acid Generator:PAG)を含むため、化学増幅反応(Chemical Amplified Reaction:CAR)をサポートする。CARは、深紫外線(Deep Ultraviolet:UV)及びディープサブミクロン(deep submicron)の技術によく用いられる。リソグラフィ工程の間に、フォトンがPAGの分解を誘発し、少量の酸を生成させる。生成した酸は、主として露光後ベーク工程の間に、レジスト膜で続いて起こる化学変換を誘発する。当然、光塩基発生剤(Photo Base Generator:PBG)を有するものなど、その他様々のレジストであってもよい。同様に、このレジストがポジ型レジスト又はネガ型レジストであるかは、設計上選択される問題であるが、説明の便宜上、以下ではPAGを有するポジ型レジストを用いて説明する。
酸感応性脱離基:RCOOR1 + H+ → RCOO−
フッ化物ポリマー:RC(CF3)2OH + OH− → RC(CF3)2O−
ヒドロキシル基含有ポリマー:
ROH + OH− → RO−、
ROH + H+ → ROH2 +
ラクトン、無水物基含有ポリマー:
RCOOR1 + OH− → RCOO− + R1OH
212 ウエハ
214 レジスト層
214a 相変換型ポリマー層
216 マスクパターン
300 ウエハ
314 レジスト層
314a 相変換型ポリマー層
320 欠陥
330 現像液
340 レジスト表面
400 ウエハ
412 ウエハ
414 レジスト層
414a 相変換型ポリマー層
416 高密度パターン領域
418 単一パターン領域
420 ウォーターマーク欠陥
500 ウエハ
512 ウエハ
514 レジスト層
514a 相変換型ポリマー層
516 酸
520 水滴
600 ウエハ
610 液浸リソグラフィシステム
614 レジスト層
614a 相変換型ポリマー層
620 欠陥
622 レンズシステム
624 液体包含構造物
626 浸漬液体
628 開口
630 表面
700 ウエハ
712 ウエハ
714 レジスト層
714a 相変換型ポリマー層
Claims (15)
- レジストを塗布した半導体基板のリソグラフィ工程で用いる材料であって、
酸と反応してアルカリ溶液に可溶となる感光性ポリマーと、
アルカリ可溶性ポリマー、酸可溶性ポリマー及び酸解離性ポリマーの少なくとも一つと、を含み、
前記アルカリ可溶性ポリマーは、アルカリ性の現像液と反応して水溶性となり、
前記酸可溶性ポリマーは、酸性の現像液と反応して水溶性となり、
前記酸解離性ポリマーは、前記酸と反応して離脱基を脱離した後、水溶性となることを特徴とする材料。 - 露光して前記酸を発生する光酸発生剤をさらに含むことを特徴とする請求項1に記載の材料。
- 前記酸と反応するアルカリ性クエンチャーをさらに含み、
前記アルカリ性クエンチャーは、露光後ベーク工程の間に化学増幅反応(Chemical Amplified Reaction:CAR)を停止することを特徴とする請求項1に記載の材料。 - 前記現像液と反応した後に残る、前記レジストの表面上のレジスト表面接触角は小さくなり、
前記レジストの厚さは、前記現像液と反応すると0.001nmを超えて小さくなることを特徴とする請求項1に記載の材料。 - 前記酸解離性ポリマーは、露光後ベーク工程を行うと、前記酸と反応して離脱基を脱離することを特徴とする請求項1に記載の材料。
- 前記酸解離性ポリマーは、前記酸と反応すると水溶性が高くなることを特徴とする請求項5に記載の材料。
- 前記酸解離性ポリマーは、密着性基及び耐エッチング基の少なくとも一つをさらに含むことを特徴とする請求項5に記載の材料。
- 前記アルカリ可溶性ポリマーは、カルボニル基、ヒドロキシル基、ラクトン基又は無水物基のポリマー基を含むことを特徴とする請求項1に記載の材料。
- 半導体基板上にリソグラフィ工程を行う方法であって、
基板上に第1の高さまでレジストを塗布する工程と、
前記レジストに露光前ベーク処理を行う工程と、
前記レジストの塗布された前記基板を露光する工程と、
露光された前記基板を現像液で現像する工程と、を含み、
前記レジストは、前記塗布及び前記露光前ベーク処理を行う間に第1の層と第2の層とに実質的に分離され、
前記レジストは、現像後に前記第1の高さより少なくとも0.001nm低い第2の高さを有することを特徴とする方法。 - 前記レジストを塗布する工程は、
前記現像液で現像された後に水溶性とならない第1のポリマー材料と、前記現像液で現像された後に水溶性となる第2のポリマー材料とを混合する工程を含むことを特徴とする請求項9に記載の方法。 - 前記塗布及び前記露光前ベーク処理によって、前記第2のポリマー材料の少なくとも一部が、前記レジストの前記基板と反対側の表面に拡散するように、前記露光前ベーク処理及び前記第2のポリマー材料の組成が選択されることを特徴とする請求項10に記載の方法。
- 0.001〜0.3nmの間の高さを有するアルカリ可溶性層を含む2層レジスト層を形成する工程をさらに含むことを特徴とする請求項10に記載の方法。
- 前記アルカリ可溶性層は、酸を含むことを特徴とする請求項12に記載の方法。
- 前記レジストは、現像工程の後に疎水性から親水性に変わることを特徴とする請求項12に記載の方法。
- 前記リソグラフィ工程は、液浸リソグラフィであり、現像工程を行うと、前記レジストの全体でなく一部が親水性になるか、膨潤するか、液体に溶解する特性を有することを特徴とする請求項9に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/534,289 US8518628B2 (en) | 2006-09-22 | 2006-09-22 | Surface switchable photoresist |
US11/534,289 | 2006-09-22 |
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JP2010065613A Division JP5253444B2 (ja) | 2006-09-22 | 2010-03-23 | 半導体基板上にリソグラフィ工程を行う方法 |
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Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8383322B2 (en) * | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
US7993808B2 (en) | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
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US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9184054B1 (en) | 2014-04-25 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
US20160064239A1 (en) | 2014-08-28 | 2016-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Integrated Circuit Patterning |
US9678422B2 (en) | 2014-09-30 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoacid generator bound to floating additive polymer |
US9543165B2 (en) | 2015-02-13 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating semiconductor device |
US9958779B2 (en) | 2015-02-13 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist additive for outgassing reduction and out-of-band radiation absorption |
US10082734B2 (en) | 2015-02-13 | 2018-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composition and method for lithography patterning |
US9412649B1 (en) | 2015-02-13 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating semiconductor device |
US9864275B2 (en) | 2015-02-26 | 2018-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithographic resist with floating protectant |
US9810990B2 (en) | 2015-03-16 | 2017-11-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical treatment for lithography improvement in a negative tone development process |
US10421867B2 (en) | 2015-03-16 | 2019-09-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Priming material for substrate coating |
US9543159B2 (en) | 2015-03-27 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning process of a semiconductor structure with a wet strippable middle layer |
US9704711B2 (en) | 2015-03-27 | 2017-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based middle layer composition |
US9570285B2 (en) | 2015-04-17 | 2017-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning composition and methods thereof |
US9891522B2 (en) | 2015-05-18 | 2018-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and composition of a chemically amplified copolymer resist |
US9772559B2 (en) | 2015-05-18 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterned photoresist removal |
US10655019B2 (en) | 2015-06-30 | 2020-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Priming material for substrate coating |
US10394126B2 (en) | 2015-07-17 | 2019-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process and materials |
US10466593B2 (en) | 2015-07-29 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of patterning a semiconductor device |
US10007177B2 (en) | 2015-08-21 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to define multiple layer patterns using double exposures |
US9612536B2 (en) | 2015-08-31 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Developer for lithography |
US9941125B2 (en) | 2015-08-31 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
US9927707B2 (en) | 2015-08-31 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Developer for lithography |
US9983474B2 (en) | 2015-09-11 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist having sensitizer bonded to acid generator |
US9892914B2 (en) | 2015-10-20 | 2018-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd | Orientation layer for directed self-assembly patterning process |
US10794872B2 (en) | 2015-11-16 | 2020-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Acoustic measurement of fabrication equipment clearance |
US10503070B2 (en) | 2015-12-10 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive material and method of lithography |
US10090357B2 (en) | 2015-12-29 | 2018-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a surfactant-containing shrinkage material to prevent photoresist pattern collapse caused by capillary forces |
US9711604B1 (en) | 2015-12-31 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Loading effect reduction through multiple coat-etch processes |
US9768022B2 (en) | 2016-01-27 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advanced cross-linkable layer over a substrate |
US10438948B2 (en) | 2016-01-29 | 2019-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures |
US10036957B2 (en) | 2016-01-29 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post development treatment method and material for shrinking critical dimension of photoresist layer |
US11822251B2 (en) | 2016-02-09 | 2023-11-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist with polar-acid-labile-group |
US9921480B2 (en) | 2016-02-10 | 2018-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd | Extreme ultraviolet photoresist |
US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
US10114291B2 (en) | 2016-03-04 | 2018-10-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Grafting agent for forming spacer layer |
US10056256B2 (en) | 2016-03-16 | 2018-08-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of priming photoresist before application of a shrink material in a lithography process |
US9857684B2 (en) | 2016-03-17 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon-containing photoresist for lithography |
US10825684B2 (en) | 2016-03-18 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Material composition and methods thereof |
US9891528B2 (en) | 2016-05-02 | 2018-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet lithography with reduced exposure dose and negative tone development |
US10177001B2 (en) | 2016-05-31 | 2019-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface modifying material for semiconductor device fabrication |
US9711367B1 (en) | 2016-06-01 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor method with wafer edge modification |
US10622211B2 (en) | 2016-08-05 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-compound-removing solvent and method in lithography |
US10866516B2 (en) | 2016-08-05 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-compound-removing solvent and method in lithography |
US10101659B2 (en) | 2016-08-12 | 2018-10-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Lithography method with surface modification layer |
US9978594B1 (en) | 2016-11-15 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Formation method of semiconductor device structure using patterning stacks |
US10453713B2 (en) | 2016-11-29 | 2019-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling temperature of furnace in semiconductor fabrication process |
US10042252B2 (en) | 2016-11-30 | 2018-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet photoresist and method |
US10163632B2 (en) | 2016-12-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Material composition and process for substrate modification |
US10658184B2 (en) | 2016-12-15 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern fidelity enhancement with directional patterning technology |
CN107658271B (zh) * | 2017-07-17 | 2019-04-09 | 潮州三环(集团)股份有限公司 | 一种防污基板及其制备方法 |
US10121811B1 (en) | 2017-08-25 | 2018-11-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of high-aspect ratio pattern formation with submicron pixel pitch |
US10573519B2 (en) | 2017-09-08 | 2020-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for performing a photolithography process |
US10522349B2 (en) | 2017-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective coating by ion implantation for lithography patterning |
US11054742B2 (en) | 2018-06-15 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV metallic resist performance enhancement via additives |
US11069526B2 (en) | 2018-06-27 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Using a self-assembly layer to facilitate selective formation of an etching stop layer |
US10867805B2 (en) | 2018-06-29 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selective removal of an etching stop layer for improving overlay shift tolerance |
US10867840B2 (en) | 2018-09-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a semiconductor device |
DE102019120765B4 (de) | 2018-09-27 | 2024-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zum bilden eines halbleiterbauelements |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07134419A (ja) * | 1993-09-14 | 1995-05-23 | Toshiba Corp | レジスト組成物 |
JPH07146558A (ja) * | 1993-06-30 | 1995-06-06 | Toshiba Corp | 感光性組成物及びそれを用いたパターン形成方法 |
JPH09160244A (ja) * | 1995-12-01 | 1997-06-20 | Japan Synthetic Rubber Co Ltd | 感放射線性組成物 |
JP2001109142A (ja) * | 1999-10-12 | 2001-04-20 | Jsr Corp | 感放射線性樹脂組成物 |
JP2001337448A (ja) * | 2000-03-21 | 2001-12-07 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2003140360A (ja) * | 2001-10-31 | 2003-05-14 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2006048029A (ja) * | 2004-07-07 | 2006-02-16 | Fuji Photo Film Co Ltd | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2006309245A (ja) * | 2005-05-01 | 2006-11-09 | Rohm & Haas Electronic Materials Llc | 液浸リソグラフィーのための組成物および方法 |
JP2007219472A (ja) * | 2006-01-23 | 2007-08-30 | Fujifilm Corp | パターン形成方法 |
JP2007304545A (ja) * | 2005-09-13 | 2007-11-22 | Fujifilm Corp | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2007304537A (ja) * | 2005-07-26 | 2007-11-22 | Fujifilm Corp | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212047A (en) * | 1990-04-10 | 1993-05-18 | E. I. Du Pont De Nemours And Company | Resist material and process for use |
JP3743187B2 (ja) | 1998-05-08 | 2006-02-08 | 住友化学株式会社 | フォトレジスト組成物 |
TWI250379B (en) | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
US6936398B2 (en) | 2001-05-09 | 2005-08-30 | Massachusetts Institute Of Technology | Resist with reduced line edge roughness |
US7192681B2 (en) | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JP3894001B2 (ja) * | 2001-09-06 | 2007-03-14 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US7461119B2 (en) * | 2001-09-29 | 2008-12-02 | Siebel Systems, Inc. | Method, apparatus, and system for managing status of requests in a client server environment |
JP3810309B2 (ja) | 2001-12-03 | 2006-08-16 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6849378B2 (en) * | 2002-04-17 | 2005-02-01 | Samsung Electronics Co., Ltd. | Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns |
US6713236B2 (en) * | 2002-07-03 | 2004-03-30 | Infineon Technologies North America Corp. | Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer |
JP4084235B2 (ja) * | 2002-08-22 | 2008-04-30 | 株式会社神戸製鋼所 | 保護膜積層微細構造体および該構造体を用いた微細構造体の乾燥方法 |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
JP4525062B2 (ja) | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP2005101498A (ja) | 2003-03-04 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
EP1609024B1 (en) * | 2003-03-11 | 2015-09-30 | Fujifilm Electronic Materials USA, Inc. | Photosensitive resin compositions |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
JP2005099646A (ja) * | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法 |
JP4469561B2 (ja) * | 2003-05-09 | 2010-05-26 | 富士フイルム株式会社 | 感光性組成物 |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP4346358B2 (ja) * | 2003-06-20 | 2009-10-21 | Necエレクトロニクス株式会社 | 化学増幅型レジスト組成物およびそれを用いた半導体装置の製造方法、パターン形成方法 |
JP4303044B2 (ja) * | 2003-06-23 | 2009-07-29 | Necエレクトロニクス株式会社 | 化学増幅型レジスト組成物および該化学増幅型レジスト組成物を用いた半導体集積回路装置の製造方法 |
US7090963B2 (en) * | 2003-06-25 | 2006-08-15 | International Business Machines Corporation | Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging |
US7186486B2 (en) | 2003-08-04 | 2007-03-06 | Micronic Laser Systems Ab | Method to pattern a substrate |
US20050029492A1 (en) * | 2003-08-05 | 2005-02-10 | Hoshang Subawalla | Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
JP4265766B2 (ja) | 2003-08-25 | 2009-05-20 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法 |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
JP2005081302A (ja) | 2003-09-10 | 2005-03-31 | Japan Organo Co Ltd | 超臨界流体による電子部品部材類の洗浄方法及び洗浄装置 |
JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
TWI286555B (en) * | 2003-10-23 | 2007-09-11 | Shinetsu Chemical Co | Polymers, resist compositions and patterning process |
JP2005128455A (ja) | 2003-10-27 | 2005-05-19 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト組成物およびレジストパターン形成方法 |
JP4609878B2 (ja) | 2003-10-28 | 2011-01-12 | 東京応化工業株式会社 | レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法 |
EP1561972B1 (en) * | 2004-02-03 | 2012-12-26 | Nissan Motor Company Limited | Speed change device |
JP5301070B2 (ja) | 2004-02-16 | 2013-09-25 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法 |
WO2005081063A1 (ja) | 2004-02-20 | 2005-09-01 | Daikin Industries, Ltd. | 液浸リソグラフィーに用いるレジスト積層体 |
US7473512B2 (en) | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
US20050202351A1 (en) * | 2004-03-09 | 2005-09-15 | Houlihan Francis M. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
JP4220423B2 (ja) * | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
KR100557222B1 (ko) * | 2004-04-28 | 2006-03-07 | 동부아남반도체 주식회사 | 이머전 리소그라피 공정의 액체 제거 장치 및 방법 |
DE602005017972D1 (de) * | 2004-05-17 | 2010-01-14 | Fujifilm Corp | Verfahren zur Erzeugung eines Musters |
KR100599081B1 (ko) * | 2004-05-27 | 2006-07-13 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 사용한 패턴 형성방법 |
JP2006013378A (ja) | 2004-06-29 | 2006-01-12 | Tdk Corp | サーミスタ素体形成用樹脂組成物及びサーミスタ |
JP2006024692A (ja) * | 2004-07-07 | 2006-01-26 | Toshiba Corp | レジストパターン形成方法 |
US7463330B2 (en) * | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1621927B1 (en) * | 2004-07-07 | 2018-05-23 | FUJIFILM Corporation | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
US8003293B2 (en) * | 2004-09-30 | 2011-08-23 | Intel Corporation | Pixelated photoresists |
JP2006124957A (ja) | 2004-10-26 | 2006-05-18 | Tenox Corp | アンカー施工用掘削ビット及びそれを用いたアンカーの施工方法 |
KR100574993B1 (ko) * | 2004-11-19 | 2006-05-02 | 삼성전자주식회사 | 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
JP4152377B2 (ja) | 2004-11-26 | 2008-09-17 | Necディスプレイソリューションズ株式会社 | 画質改善方法および画質改善装置 |
JP2006198897A (ja) | 2005-01-20 | 2006-08-03 | Nidec Copal Corp | オーバコート装置 |
JP4667273B2 (ja) | 2005-03-04 | 2011-04-06 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US20070002296A1 (en) | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
US7927779B2 (en) * | 2005-06-30 | 2011-04-19 | Taiwan Semiconductor Manufacturing Companym, Ltd. | Water mark defect prevention for immersion lithography |
US8383322B2 (en) * | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
US7993808B2 (en) * | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
JP2007212990A (ja) * | 2005-12-05 | 2007-08-23 | Tokyo Ohka Kogyo Co Ltd | 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法 |
US8945808B2 (en) * | 2006-04-28 | 2015-02-03 | International Business Machines Corporation | Self-topcoating resist for photolithography |
-
2006
- 2006-09-22 US US11/534,289 patent/US8518628B2/en active Active
-
2007
- 2007-04-26 TW TW096114844A patent/TWI351582B/zh active
- 2007-06-01 JP JP2007146915A patent/JP5028150B2/ja active Active
-
2010
- 2010-03-23 JP JP2010065613A patent/JP5253444B2/ja active Active
-
2013
- 2013-08-20 US US13/971,650 patent/US8715919B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07146558A (ja) * | 1993-06-30 | 1995-06-06 | Toshiba Corp | 感光性組成物及びそれを用いたパターン形成方法 |
JPH07134419A (ja) * | 1993-09-14 | 1995-05-23 | Toshiba Corp | レジスト組成物 |
JPH09160244A (ja) * | 1995-12-01 | 1997-06-20 | Japan Synthetic Rubber Co Ltd | 感放射線性組成物 |
JP2001109142A (ja) * | 1999-10-12 | 2001-04-20 | Jsr Corp | 感放射線性樹脂組成物 |
JP2001337448A (ja) * | 2000-03-21 | 2001-12-07 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2003140360A (ja) * | 2001-10-31 | 2003-05-14 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2006048029A (ja) * | 2004-07-07 | 2006-02-16 | Fuji Photo Film Co Ltd | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2006309245A (ja) * | 2005-05-01 | 2006-11-09 | Rohm & Haas Electronic Materials Llc | 液浸リソグラフィーのための組成物および方法 |
JP2007304537A (ja) * | 2005-07-26 | 2007-11-22 | Fujifilm Corp | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
JP2007304545A (ja) * | 2005-09-13 | 2007-11-22 | Fujifilm Corp | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2007219472A (ja) * | 2006-01-23 | 2007-08-30 | Fujifilm Corp | パターン形成方法 |
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US8715919B2 (en) | 2014-05-06 |
JP5028150B2 (ja) | 2012-09-19 |
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