JP5096860B2 - パターン形成方法 - Google Patents
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- JP5096860B2 JP5096860B2 JP2007261036A JP2007261036A JP5096860B2 JP 5096860 B2 JP5096860 B2 JP 5096860B2 JP 2007261036 A JP2007261036 A JP 2007261036A JP 2007261036 A JP2007261036 A JP 2007261036A JP 5096860 B2 JP5096860 B2 JP 5096860B2
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- 238000000034 method Methods 0.000 title claims description 76
- 230000007261 regionalization Effects 0.000 title claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 238000007654 immersion Methods 0.000 claims description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 25
- 229910052731 fluorine Inorganic materials 0.000 claims description 25
- 239000011737 fluorine Substances 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000004094 surface-active agent Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004380 ashing Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 9
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 125000000129 anionic group Chemical group 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 230000018109 developmental process Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 2
- 150000003871 sulfonates Chemical class 0.000 claims 1
- 238000000059 patterning Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 239000002105 nanoparticle Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000007687 exposure technique Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
M. Maenhoudt et al., "Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75,λ=193nm", Proc. SPIE, vol.5754, 1508 (2005) 高 明天他,「フッ素樹脂の半導体用レジスト材料への応用」,The Chemical Times,No.3, P.6 (2003)
本発明の第1の実施形態におけるパターン形成方法について、図1(a)〜(c)、図2(a)〜(d)、図3(a)〜(d)、及び図4(a)〜(b)を参照しながら説明する。
本発明におけるパターン形成方法に、液浸露光技術を適用することによって、ダブルパターニングの解像度をより向上させることができる。
第1の実施形態においては、下層膜102にフッ素系の界面活性剤を添加することによって、下層膜102の表面の酸素系プラズマ暴露に起因するパターン寸法のバラツキ等の発生を防止したが、本実施形態においては、下層膜102に無機のナノパーティクルを添加することによって、第1の実施形態と同様の効果を奏するようにしたものである。
a)に示すように、第2のレジストパターン107aを酸素系プラズマによるアッシングで除去して、第2の中間層パターン103bを形成する。
102 下層膜
102b 下層膜パターン
103 中間層膜
103a 第1の中間層パターン
103b 第2の中間層パターン
104 第1のレジスト膜
104a 第1のレジストパターン
105 第1のフォトマスク
106 ArFエキシマレーザ光
107 第2のレジスト膜
107a 第2のレジストパターン
108 第2のフォトマスク
150 液浸溶液
160 バリア膜
201 半導体基板
202 ハードマスク
202 中間層膜
202a 第1のハードマスクパターン
202a 中間層パターン
202b 第2のハードマスクパターン
202b 中間層パターン
203 第1のArFレジスト膜
203a 第1のレジストパターン
204 第1のフォトマスク
205 ArFエキシマレーザ光
206 第2のArFレジスト膜
206a 第2のレジストパターン
207 第2のフォトマスク
210 下層膜
210b 下層膜パターン
220 酸素プラズマ
230a、230b 下層膜の表面
Claims (9)
- 基板上に下層膜を形成する工程(a)と、
前記下層膜の上に中間層膜を形成する工程(b)と、
前記中間層膜の上に第1のレジスト膜を形成した後、該第1のレジスト膜に第1のパターンを有する第1のフォトマスクを介して露光および現像を行い、第1のレジストパターンを形成する工程(c)と、
前記第1のレジストパターンをマスクに、前記中間層膜をエッチングして、第1の中間層パターンを形成する工程(d)と、
前記第1のレジストパターンを除去する工程(e)と、
前記工程(e)の後、前記下層膜と前記第1の中間層パターンとの上に第2のレジスト膜を形成した後、該第2のレジスト膜に第2のパターンを有する第2のフォトマスクを介して露光および現像を行い、第2のレジストパターンを形成する工程(f)と、
前記第2のレジストパターンをマスクに、前記第1の中間層パターンをエッチングして、第2の中間層パターンを形成する工程(g)と、
前記第2のレジストパターンを除去する工程(h)と、
前記工程(h)の後に、前記第2の中間層パターンをマスクに、前記下層膜をエッチングして、前記第1及び第2のパターンを有する下層膜パターンを形成する工程(i)と
を含むパターン形成方法において、
前記下層膜は、酸素系プラズマに対して耐性のあるフッ素系の界面活性剤が添加された有機物からなり、
前記工程(e)において、前記第1のレジストパターンは、酸素系プラズマによるアッシングで除去される、パターン形成方法。 - 前記フッ素系の界面活性剤は、前記下層膜の表面近傍に偏在している、請求項1に記載のパターン形成方法。
- 前記フッ素系の界面活性剤は、10〜30wt%の割合で前記下層膜に添加されている
、請求項1又は2に記載のパターン形成方法。 - 前記フッ素系の界面活性剤は、アニオン系フッ素系又はノニオン系フッ素系の界面活性剤である、請求項1から3のいずれか1項に記載のパターン形成方法。
- 前記アニオン系フッ素系の界面活性剤は、パーフルオロアルキル基含有スルホン酸塩、パーフルオロアルキル基含有カルボン酸塩、及びパーフルオロアルキル基含有リン酸エステルからなる群から選択された1種以上の材料からなる、請求項4に記載のパターン形成方法。
- 前記ノニオン系フッ素系の界面活性剤は、パーフルオロアルキルエチレンオキシド付加物からなる、請求項4に記載のパターン形成方法。
- 前記工程(c)又は前記工程(f)の少なくとも一方の工程において、前記第1のレジスト膜又は第2のレジスト膜の上に液体を配した状態で液浸露光を行う、請求項1から6のいずれか1項に記載のパターン形成方法。
- 前記液浸露光を行う前に、前記第1のレジスト膜又は第2のレジスト膜の上にバリア膜を形成する工程をさらに含む、請求項7に記載のパターン形成方法。
- 前記バリア膜を形成した後、該バリア膜を加熱する工程をさらに含む、請求項8に記載のパターン形成方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2007261036A JP5096860B2 (ja) | 2007-10-04 | 2007-10-04 | パターン形成方法 |
US12/212,291 US7998663B2 (en) | 2007-10-04 | 2008-09-17 | Pattern formation method |
Applications Claiming Priority (1)
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JP2007261036A JP5096860B2 (ja) | 2007-10-04 | 2007-10-04 | パターン形成方法 |
Publications (3)
Publication Number | Publication Date |
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JP2009094146A JP2009094146A (ja) | 2009-04-30 |
JP2009094146A5 JP2009094146A5 (ja) | 2010-09-30 |
JP5096860B2 true JP5096860B2 (ja) | 2012-12-12 |
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JP2007261036A Expired - Fee Related JP5096860B2 (ja) | 2007-10-04 | 2007-10-04 | パターン形成方法 |
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US (1) | US7998663B2 (ja) |
JP (1) | JP5096860B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6071255B2 (ja) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | 光硬化物 |
JP7269503B2 (ja) | 2018-02-28 | 2023-05-09 | セントラル硝子株式会社 | 珪素含有層形成組成物およびそれを用いたパターン付き基板の製造方法 |
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JP3390329B2 (ja) * | 1997-06-27 | 2003-03-24 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6569595B1 (en) * | 1999-02-25 | 2003-05-27 | Kabushiki Kaisha Toshiba | Method of forming a pattern |
JP4096138B2 (ja) * | 1999-04-12 | 2008-06-04 | Jsr株式会社 | レジスト下層膜用組成物の製造方法 |
KR100669862B1 (ko) * | 2000-11-13 | 2007-01-17 | 삼성전자주식회사 | 반도체 장치의 미세패턴 형성방법 |
JP4392431B2 (ja) * | 2004-02-25 | 2010-01-06 | パナソニック株式会社 | バリア膜形成用材料及びそれを用いたパターン形成方法 |
US7498362B2 (en) * | 2004-03-08 | 2009-03-03 | Ecology Coatings, Inc. | Environmentally friendly coating compositions for coating metal objects, coated objects therefrom and methods, processes and assemblages for coating thereof |
JP2005292613A (ja) * | 2004-04-02 | 2005-10-20 | Matsushita Electric Ind Co Ltd | レジスト材料及びそれを用いたパターン形成方法 |
JP4448767B2 (ja) * | 2004-10-08 | 2010-04-14 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
KR101297443B1 (ko) * | 2005-02-07 | 2013-08-30 | 데이진 듀폰 필름 가부시키가이샤 | 도전성 적층 필름 |
JP2007073684A (ja) * | 2005-09-06 | 2007-03-22 | Toshiba Corp | パターン形成方法 |
US7829159B2 (en) * | 2005-12-16 | 2010-11-09 | Asm Japan K.K. | Method of forming organosilicon oxide film and multilayer resist structure |
JP2007201457A (ja) * | 2005-12-28 | 2007-08-09 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
US7807336B2 (en) * | 2005-12-28 | 2010-10-05 | Hynix Semiconductor Inc. | Method for manufacturing semiconductor device |
US7910289B2 (en) * | 2006-01-06 | 2011-03-22 | Texas Instruments Incorporated | Use of dual mask processing of different composition such as inorganic/organic to enable a single poly etch using a two-print-two-etch approach |
JP2008041741A (ja) * | 2006-08-02 | 2008-02-21 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP5106020B2 (ja) * | 2007-02-08 | 2012-12-26 | パナソニック株式会社 | パターン形成方法 |
US7943285B2 (en) * | 2007-03-13 | 2011-05-17 | Panasonic Corporation | Pattern formation method |
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2007
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2008
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US20090092930A1 (en) | 2009-04-09 |
JP2009094146A (ja) | 2009-04-30 |
US7998663B2 (en) | 2011-08-16 |
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