JP5028150B2 - 表面の相変換が可能なフォトレジスト - Google Patents
表面の相変換が可能なフォトレジスト Download PDFInfo
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- JP5028150B2 JP5028150B2 JP2007146915A JP2007146915A JP5028150B2 JP 5028150 B2 JP5028150 B2 JP 5028150B2 JP 2007146915 A JP2007146915 A JP 2007146915A JP 2007146915 A JP2007146915 A JP 2007146915A JP 5028150 B2 JP5028150 B2 JP 5028150B2
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 13
- 230000009466 transformation Effects 0.000 title 1
- 229920000642 polymer Polymers 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 87
- 238000006243 chemical reaction Methods 0.000 claims abstract description 43
- 239000002253 acid Substances 0.000 claims abstract description 32
- 150000008064 anhydrides Chemical group 0.000 claims abstract description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 44
- 230000008859 change Effects 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 34
- 238000007654 immersion Methods 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 125000000686 lactone group Chemical group 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 30
- 239000004065 semiconductor Substances 0.000 abstract description 28
- 238000001459 lithography Methods 0.000 abstract description 18
- 230000004044 response Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 150000002596 lactones Chemical class 0.000 abstract description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- 239000002861 polymer material Substances 0.000 description 38
- 238000000671 immersion lithography Methods 0.000 description 26
- 239000007788 liquid Substances 0.000 description 18
- 230000008901 benefit Effects 0.000 description 12
- 239000000243 solution Substances 0.000 description 9
- 238000011161 development Methods 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 125000004122 cyclic group Chemical group 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920001477 hydrophilic polymer Polymers 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 102100023698 C-C motif chemokine 17 Human genes 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101000978362 Homo sapiens C-C motif chemokine 17 Proteins 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000003010 ionic group Chemical group 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012667 polymer degradation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
図1は、本発明のリソグラフィ方法100を簡単に示したフローチャート図である。このリソグラフィ方法100は、本発明の1又はそれ以上の実施形態により、長所が得られる一例である。この一例を簡単に説明するため、本発明ではリソグラフィ方法100を液浸リソグラフィ工程として説明する。リソグラフィ方法100により処理されたウエハ200の一例を示すために、リソグラフィ方法100についてさらに検討し、図2〜図4を用いて説明する。ウエハ200は、ポリマー、金属及び/又は誘電体を含んだ1以上の層をさらに含んだ基板212であってもよく、基板212はパターニングされるべきものである。
相変換型ポリマー層の異なる実施形態の各々は、上述のリソグラフィ工程において一つ又はそれ以上の長所がある。以下、それらの長所を説明する。しかし、その他の長所が存在する可能性もあり、相変換型ポリマー層の各実施形態は、必ずしも特別な長所が必要なわけではない。
本実施形態のレジスト(214、314、414、514、614及び/又は714)は、少なくとも2種類の材料、すなわち標準的なレジストポリマー材料と相変換型ポリマー材料とを含む。標準的なレジストポリマー材料は、酸に反応してアルカリ溶液に溶解しうる。標準的なレジストポリマー材料は、酸を発生させる光酸発生剤(Photo Acid Generator:PAG)を含むため、化学増幅反応(Chemical Amplified Reaction:CAR)をサポートする。CARは、深紫外線(Deep Ultraviolet:UV)及びディープサブミクロン(deep submicron)の技術によく用いられる。リソグラフィ工程の間に、フォトンがPAGの分解を誘発し、少量の酸を生成させる。生成した酸は、主として露光後ベーク工程の間に、レジスト膜で続いて起こる化学変換を誘発する。当然、光塩基発生剤(Photo Base Generator:PBG)を有するものなど、その他様々のレジストであってもよい。同様に、このレジストがポジ型レジスト又はネガ型レジストであるかは、設計上選択される問題であるが、説明の便宜上、以下ではPAGを有するポジ型レジストを用いて説明する。
酸感応性脱離基:RCOOR1 + H+ → RCOO−
フッ化物ポリマー:RC(CF3)2OH + OH− → RC(CF3)2O−
ヒドロキシル基含有ポリマー:
ROH + OH− → RO−、
ROH + H+ → ROH2 +
ラクトン、無水物基含有ポリマー:
RCOOR1 + OH− → RCOO− + R1OH
212 ウエハ
214 レジスト層
214a 相変換型ポリマー層
216 マスクパターン
300 ウエハ
314 レジスト層
314a 相変換型ポリマー層
320 欠陥
330 現像液
340 レジスト表面
400 ウエハ
412 ウエハ
414 レジスト層
414a 相変換型ポリマー層
416 高密度パターン領域
418 単一パターン領域
420 ウォーターマーク欠陥
500 ウエハ
512 ウエハ
514 レジスト層
514a 相変換型ポリマー層
516 酸
520 水滴
600 ウエハ
610 液浸リソグラフィシステム
614 レジスト層
614a 相変換型ポリマー層
620 欠陥
622 レンズシステム
624 液体包含構造物
626 浸漬液体
628 開口
630 表面
700 ウエハ
712 ウエハ
714 レジスト層
714a 相変換型ポリマー層
Claims (3)
- 液浸フォトリソグラフィに使用されるフォトレジスト材料であって、
前記フォトレジスト材料は、感光性ポリマー、光酸発生剤、アルカリ性クエンチャー、及び相変換型ポリマーを含み、
前記相変換型ポリマーは、フォトレジスト層の上部表面に移動又は拡散して液浸フォトリソグラフィー工程中で相変換層を形成し、現像液中で親水性に変換して、前記フォトレジスト層の表面の欠陥を除去することが可能であり、
前記相変換型ポリマーは、
一般式(I)で表されるカルボニル基、一般式(II)で表されるヒドロキシル基、一般式(III)で表されるラクトン基又は一般式(IV)で表される無水物基を含有するアルカリ可溶性ポリマーであり、かつ、
アルカリ性の現像液と反応して水溶性になるアルカリ可溶性ポリマーであり、
R5及びR6の各々は、水素であり、R7は、水素、メチル基又はエチル基であり、R8は、直鎖状の炭素数1〜20のフッ化アルキル基であり、
R9及びR10の各々は、水素であり、R11は、水素、メチル基又はエチル基であり、R12及びR13の各々は、アルキル基又は炭素数1〜5のフッ化アルキル基であり、
R14及びR15の各々は、水素であり、R16は、水素、メチル基又はエチル基であり、R17及びR18の各々は、アルキル基又は炭素数1〜5のフッ化アルキル基である。)
前記相変換型ポリマーは、(a)感光性ポリマーよりも分子量が小さい、(b)感光性ポリマーよりも極性が大きい、(c)感光性ポリマーよりも親水性が高い、及び(d)感光性ポリマーよりも水に対する溶解性が高い、特性の内の少なくとも1つを有する、
ことを特徴とする材料。 - 前記酸と反応するアルカリ性クエンチャーは、露光後ベーク工程の間に化学増幅反応(Chemical Amplified Reaction:CAR)を停止することを特徴とする請求項1に記載の材料。
- 前記現像液と反応した後に残る、前記レジストの表面上のレジスト表面接触角は小さくなり、
前記レジストの厚さは、前記現像液と反応すると0.001nmを超えて小さくなることを特徴とする請求項1に記載の材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/534,289 US8518628B2 (en) | 2006-09-22 | 2006-09-22 | Surface switchable photoresist |
US11/534,289 | 2006-09-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010065613A Division JP5253444B2 (ja) | 2006-09-22 | 2010-03-23 | 半導体基板上にリソグラフィ工程を行う方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008077052A JP2008077052A (ja) | 2008-04-03 |
JP5028150B2 true JP5028150B2 (ja) | 2012-09-19 |
Family
ID=39247738
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007146915A Active JP5028150B2 (ja) | 2006-09-22 | 2007-06-01 | 表面の相変換が可能なフォトレジスト |
JP2010065613A Active JP5253444B2 (ja) | 2006-09-22 | 2010-03-23 | 半導体基板上にリソグラフィ工程を行う方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010065613A Active JP5253444B2 (ja) | 2006-09-22 | 2010-03-23 | 半導体基板上にリソグラフィ工程を行う方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8518628B2 (ja) |
JP (2) | JP5028150B2 (ja) |
TW (1) | TWI351582B (ja) |
Families Citing this family (82)
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-
2006
- 2006-09-22 US US11/534,289 patent/US8518628B2/en active Active
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