JP2008047652A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2008047652A JP2008047652A JP2006220563A JP2006220563A JP2008047652A JP 2008047652 A JP2008047652 A JP 2008047652A JP 2006220563 A JP2006220563 A JP 2006220563A JP 2006220563 A JP2006220563 A JP 2006220563A JP 2008047652 A JP2008047652 A JP 2008047652A
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- electrode pad
- metal film
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Abstract
【解決手段】密着層としての第1パッシベーション膜3と、第1パッシベーション膜3上に積層され、半導体チップ10を外部からの物理的ダメージから保護するための密着性の低い第2パッシベーション膜4と、第1・第2パッシベーション膜3・4の第1・第2電極パッド開口部3a・4aを覆うように形成された金属膜11・21と、金属膜21上に形成されたバンプ31とからなる外部接続端子とを備え、第2電極パッド開口部4aの外周が、第1電極パッド開口部3aの外周よりも大きく外側に形成されており、密着性の低い第2パッシベーション膜4が、電極パッドメタル2に直接接触しないように形成されている。
【選択図】図1
Description
上記の構成によれば、例えば、上記第1電極パッド開口部が四角形の断面を有する場合に比べ、上記金属膜の各コーナ部でのカバレッジが良くなる。このため、金属膜の積層状態が安定し、該金属膜の剥離、クラックの発生をより低減することができる。
〔実施の形態1〕
本発明の一実施の形態について図1ないし図8、図10および図11を参照し以下に説明する。
次に、金属膜21の第1層をマスクとして、ウエハ全面に形成された第2層を薬液(ウエットエッチング)、反応性ガスによる化学的エッチング(ドライエッチング)、スパッタ原子(分子)等による物理的エッチング(ドライエッチング)を行い除去する。
さらに、酸素、アルゴン、フッ素系等のプラズマ処理により、第2パッシベーション膜4の表面側の角部を除去すると連続した傾斜面を容易に形成することができる。本実施の形態のように、第2電極パッド開口部4aから第1電極パッド開口部3aが完全に露出されている構成においては、第1電極パッド開口部3の丸み形成時のプラズマ処理とかねても良い。
本実施の形態では、傾斜の形成が比較的容易な非感光性のものを用いたが、感光性のものを用いる場合は、膜の底面側よりも表面側で広く開口することが容易であるポジ型が好ましく、ステッパー露光機では露光時にフォーカスを半導体ウエハ表面側により離れた方向に設定するか、一括露光機使用時にはマスクを半導体ウエハから隔てる方向にセットすると良い。また、露光量は過露光気味にする方が好ましい。以降の工程については、非感光性と感光性の区別もなく上記と同様の方法により連続した傾斜面を形成することができる。
〔実施の形態2〕
本発明の他の実施の形態について図7および図8を参照し以下に説明する。
〔実施の形態3〕
本発明のさらに他の実施の形態について図9を参照し以下に説明する。
〔実施の形態4〕
本発明のさらに他の実施の形態について図12および図13を参照し以下に説明する。
半導体チップ1とハンダ等の低融点金属とを接続する場合においては、金属膜21および金属膜11全体へのハンダ等の流れ出しが起こり、所望の接続形状が得られないことがあるためハンダ制限部を設ける必要がある。
2 電極パッドメタル(電極パッド)
3 第1パッシベーション膜
3a 第1電極パッド開口部
4 第2パッシベーション膜
4a 第2電極パッド開口部
5 第3パッシベーション膜
6 スクライブ領域
10 半導体チップ(半導体装置)
11 金属膜(バリア層、第3層、外部接続端子)
21 金属膜(最上層(第1層)、下地層(第2層)、外部接続端子)
31 バンプ(外部接続端子)
Claims (44)
- 回路形成面上に、電極パッドが形成された半導体チップを備えた半導体装置において、
前記回路形成面上に積層され、前記電極パッドを露出させる第1電極パッド開口部が形成された、密着層としての第1パッシベーション膜と、
前記第1パッシベーション膜上に積層され、前記電極パッドを露出させる第2電極パッド開口部が形成された、前記半導体チップを外部からの物理的ダメージから保護するための第2パッシベーション膜と、
少なくとも前記第1電極パッド開口部を覆うように形成された金属膜を含み、前記電極パッドと外部とを接続する外部接続端子とを備え、
前記第2電極パッド開口部は、前記第1電極パッド開口部全体を露出するように設けられており、前記第2パッシベーション膜が、前記電極パッドに直接接触しないように形成されていることを特徴とする半導体装置。 - 前記第2電極パッド開口部の外周が、前記第1電極パッド開口部の外周と略一致するように形成されていることを特徴とする請求項1記載の半導体装置。
- 前記第2電極パッド開口部の外周が、前記第1電極パッド開口部の外周の外側に位置するように該第1電極パッド開口部よりも大きく形成されており、前記金属膜の一部が、前記第2電極パッド開口部の形成部分において第1パッシベーション膜と密着していることを特徴とする請求項1記載の半導体装置。
- 前記金属膜が、該電極パッドの外周の少なくとも一部に、第1パッシベーション膜との密着領域を有し、
前記第2パッシベーション膜が、前記電極パッドの外周の一部を覆うように形成されてなることを特徴とする請求項1または3記載の半導体装置。 - 前記金属膜が、該電極パッドの外周の全方向に、第1パッシベーション膜との密着領域を有し、
前記第2パッシベーション膜が、前記電極パッドの外周の一部を覆うように形成されてなることを特徴とする請求項1または3記載の半導体装置。 - 前記第2電極パッド開口部が、前記電極パッドの外周を囲むように形成されていることを特徴とする請求項4または5記載の半導体装置。
- 前記金属膜が、前記第1パッシベーション膜との密着領域を有し、該密着領域は、前記第1電極パッド開口部を囲むように形成されていることを特徴とする請求項1、3ないし6の何れかに記載の半導体装置。
- 前記第1パッシベーション膜が、前記第2パッシベーション膜よりも吸水率の低い材料からなることを特徴とする請求項1ないし7の何れかに記載の半導体装置。
- 前記第1パッシベーション膜が、前記第2パッシベーション膜よりも線膨張係数の小さい材料からなることを特徴とする請求項1ないし8の何れかに記載の半導体装置。
- 前記第1パッシベーション膜が無機材料からなり、前記第2パッシベーション膜が有機材料からなることを特徴とする請求項1ないし9の何れかに記載の半導体装置。
- 前記金属膜の積層方向の断面が、多角形状の各コーナ部が丸み帯びた形状に形成されていることを特徴とする請求項1ないし10の何れかに記載の半導体装置。
- 前記金属膜が、最上層である第1層と、該最上層の直下に積層された第2層とを含む複数の層が積層されてなり、前記第1層および第2層が、同一の金属または同一の金属を主成分とする材料からなり、かつ前記第1層では、該金属が前記第2層よりも疎な組織を形成することを特徴とする請求項1ないし11の何れかに記載の半導体装置。
- 前記複数の層は、さらに最下層であるバリア層としての第3層を含み、前記第1層がCuからなり、前記第1層の厚さが2μm以上であることを特徴とする請求項12記載の半導体装置。
- 前記外部接続端子が、前記金属膜上に形成されたPbフリーハンダ材料を含むバンプを備えることを特徴とする請求項1ないし13の何れかに記載の半導体装置。
- 前記外部接続端子が、前記金属膜上に形成され、少なくとも樹脂または金属からなるコア部と導電性の接合部材からなる被膜とを含む構成のバンプを備え、該コア部は該被膜の融解温度で溶融しない構成であることを特徴とする請求項1ないし14の何れかに記載の半導体装置。
- 前記金属膜周辺の丸みを帯びた面がバンプ材料により覆われていることを特徴とする請求項11ないし15の何れかに記載に記載の半導体装置。
- 前記金属膜の側面がバンプ材料により覆われていることを特徴とする請求項11ないし16の何れかに記載の半導体装置。
- 前記金属膜が積層される第2電極パッド開口部の側面が、前記第2パッシベーション膜の裏面側から表面側に向かって外側に傾斜し、表面と連続した曲面を形成することを特徴とする請求項1ないし17の何れかに記載の半導体装置。
- 前記金属膜が積層される第2電極パッド開口部の側面が、前記第2パッシベーション膜の裏面側から表面側に向かって外側に傾斜し、前記第1パッシベーション膜における前記金属膜と密着する面と連続した曲面を形成することを特徴とする請求項1ないし18の何れかに記載の半導体装置。
- 前記第2電極パッド開口部の面方向の断面が、楕円状、円形状、または多角形の各コーナ部が丸みを帯びた形状であることを特徴とする請求項1ないし19の何れかに記載の半導体装置。
- 前記第2電極パッド開口部の面方向の断面が、楕円状、円形状、または多角形の各コーナ部が丸みを帯びた形状の一部をなす形状であることを特徴とする請求項4記載の半導体装置。
- 前記金属膜が積層される第1電極パッド開口部の側面が、前記第1パッシベーション膜の裏面側から表面側に向かって外側に傾斜していることを特徴とする請求項1ないし21の何れかに記載の半導体装置。
- 前記第1電極パッド開口部の側面が、前記第1パッシベーション膜の表面と連続した曲面を形成することを特徴とする請求項1ないし22の何れかに記載の半導体装置。
- 前記第1電極パッド開口部の側面が、前記電極パッドにおける前記金属膜との密着面と連続した曲面を形成することを特徴とする請求項1ないし23の何れかに記載の半導体装置。
- 前記第1電極パッド開口部の面方向の断面が、楕円状、円形状、または多角形の各コーナ部が丸みを帯びた形状であることを特徴とする請求項1ないし24の何れかに記載の半導体装置。
- 前記第2電極パッド開口部が、前記金属膜の略中央に位置するように形成されていることを特徴とする請求項1ないし25の何れかに記載の半導体装置。
- 前記第1電極パッド開口部の中央が、前記金属膜の中央からずれた位置に形成されていることを特徴とする請求項1ないし26の何れかに記載の半導体装置。
- 前記金属膜上における外部との接続領域以外の領域が、第3パッシベーション膜で覆われていることを特徴とする請求項1ないし27の何れかに記載の半導体装置。
- 回路形成面上に、電極パッドが形成された半導体チップを備えた半導体装置の製造方法であって、
前記回路形成面上に、前記電極パッドを露出させる第1電極パッド開口部が形成された、密着層としての第1パッシベーション膜を積層する工程と、
前記第1パッシベーション膜上に積層され、前記電極パッドを露出させる第2電極パッド開口部が形成された、前記半導体チップを外部からの物理的ダメージから保護するための第2パッシベーション膜を形成する工程と、
少なくとも前記第1電極パッド開口部を覆うように形成された金属膜を含み、前記電極パッドと外部とを接続する外部接続端子を形成する工程とを含み、
前記第2電極パッド開口部は、前記第1電極パッド開口部全体を露出するように設けられており、前記第2パッシベーション膜が、前記電極パッドに直接接触しないように形成することを特徴とする半導体装置の製造方法。 - 前記第2電極パッド開口部の外周を、回路形成面方向に前記第1電極パッド開口部の外周と略一致するように形成する工程を含む請求項29記載の半導体装置の製造方法。
- 前記第1電極パッド開口部と第2電極パッド開口部とを同時に形成することを特徴とする請求項29または30記載の半導体装置の製造方法。
- 前記第2電極パッド開口部から前記第1パッシベーション膜の一部を露出させる工程と、
前記第2電極パッド開口部から露出した前記第1パッシベーション膜と金属膜との密着領域を設ける工程とを含むことを特徴とする請求項29記載の半導体装置の製造方法。 - 前記第2電極パッド開口部から、前記第1電極パッド開口部を取り囲むように第1パッシベーション膜を露出する工程と、
前記第1電極パッド開口部とその周辺を取り囲む領域の下地金属層を露出してフォトレジストを形成する工程とを含むことを特徴とする請求項29または32記載の半導体装置の製造方法。 - 前記第2電極パッド開口部と前記第2パッシベーション膜の一部の上層に積層される金属膜を露出するフォトレジストを形成する工程を含むことを特徴とする請求項29ないし33の何れかに記載の半導体装置の製造方法。
- 前記第2電極パッド開口部とその周辺を取り囲むように形成された第2パッシベーション膜上に積層される金属膜を露出するようにフォトレジストを形成する工程を含むことを特徴とする請求項29ないし34の何れかに記載の半導体装置の製造方法。
- 前記金属膜の最上層の積層方向における周辺部に丸みを形成することを特徴とする請求項29ないし35の何れかに記載の半導体装置の製造方法。
- 前記金属膜の最上層の断面方向における周辺部と前記下地金属層とを同時にエッチングし、該最上層に丸みを形成することを特徴とする請求項29ないし36の何れかに記載の半導体装置の製造方法。
- ペースト状のバンプ材料を、金属膜表面とその周辺の丸みのある面を覆うように塗布し、熱処理によりバンプを形成する工程を含むことを特徴とする請求項36または37記載の半導体装置の製造方法。
- ペースト状のバンプ材料を、金属膜の側面を覆うように塗布し、熱処理によりバンプを形成する工程を含むことを特徴とする請求項36ないし38記載の半導体装置の製造方法。
- フラックスを金属膜表面とその周辺の丸みのある面を覆うように塗布し、金属球体を搭載し、熱処理を行って前記金属膜上にバンプを形成する工程を含むことを特徴とする請求項36または37記載の半導体装置の製造方法。
- フラックスを金属膜表面と金属膜の側面を覆うように塗布し、金属球体を搭載し、熱処理を行って前記金属膜上にバンプを形成する工程を含むことを特徴とする請求項36、37または40記載の半導体装置の製造方法。
- ペースト状のハンダ材料を金属膜表面と該金属膜表面の周辺の丸みのある面を覆うように塗布して金属球体を搭載し、熱処理を行って前記金属膜上にバンプを形成する工程を含むことを特徴とする請求項36または37記載の半導体装置の製造方法。
- ペースト状のハンダ材料を金属膜表面と該金属膜表面の側面を覆うように塗布して金属球体を搭載し、熱処理を行って前記金属膜上にバンプを形成する工程を含むことを特徴とする請求項36、37または42記載の半導体装置の製造方法。
- 前記金属球体のコアを、金属被膜の融解温度で溶融しない金属または樹脂で形成することを特徴とする請求項40ないし43の何れかに記載の半導体装置の製造方法。
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