JP2005252162A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2005252162A JP2005252162A JP2004063997A JP2004063997A JP2005252162A JP 2005252162 A JP2005252162 A JP 2005252162A JP 2004063997 A JP2004063997 A JP 2004063997A JP 2004063997 A JP2004063997 A JP 2004063997A JP 2005252162 A JP2005252162 A JP 2005252162A
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Abstract
【解決手段】 シリコンウェハ4の素子形成面に形成されている電気回路に電気的に接続されている電極パッド2を設ける。電極パッド2に電気的に接続されている再配線された配線パターン5を設ける。前記配線パターン5表面に配線パターン5の酸化による酸化膜10を形成する。
【選択図】 図1
Description
図1(a)乃至図2(e)は本発明の製造方法に係る実施の第一形態における各工程を示すものであり、シリコンウェハ(基板)4上に形成されている複数の半導体チップ(半導体装置)のうち、1チップの部分のみの各工程断面を図示している。以下、図1(a)乃至図2(e)を用いて製造方法の実施の第一形態について説明する。
図5(a)乃至図6(e)は本発明の半導体装置及びその製造方法の実施の第二形態を示したものであり、シリコンウェハ4上に形成されている複数の半導体チップのうち、1チップの部分のみの各工程での断面を図示している。以下、図5(a)乃至図6(e)を用いて製造方法の実施の第二形態について説明する。
図7(a)乃至図8(d)は本発明に係る半導体装置及びその製造方法の実施の第三形態を示したものであり、シリコンウェハ4上に形成されている複数の半導体チップ1のうち、1チップの部分のみの断面を図示している。以下、図7(a)乃至図8(d)を用いて製造方法の実施の第三形態について説明する。
図9(a)乃至図9(c)は本発明の半導体チップ(半導体装置)1及びその製造方法に係る実施の第四形態を示したものであり、シリコンウェハ4上に形成されている複数の半導体チップ1のうち、1チップの部分のみの断面を図示している。以下、図9(a)乃至図9(c)を用いて、上記半導体チップ1及びその製造方法に係る実施の第四形態について説明する。
2:電極パッド
3:保護膜
4:シリコンウェハ(基板)
5:配線パターン
6:封止樹脂
7:半田ボール
9:フラックス
10:酸化膜
11:感光性樹脂
12:基板
13:アンダーフィル材
14:低融点半田ボール
15:ソルダーレジスト層
16:プリント配線板
17:ランド
18:間隙部
19:接合用穴
20:直径方向
Claims (17)
- 基板の素子形成面に形成されている電気回路に電気的に接続されている電極パッドと、前記電極パッドに電気的に接続されている再配線された配線パターンとを有する半導体装置において、
前記配線パターン表面には、前記配線パターンを酸化して形成された酸化膜が形成されていることを特徴とする半導体装置。 - 前記配線パターンは、銅を主成分とするものであることを特徴とする請求項1記載の半導体装置。
- 前記配線パターン上に、外部電極端子が形成されていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記外部電極端子は、半田を略球状に形成した、半田ボールであることを特徴とする請求項3記載の半導体装置。
- 前記外部電極端子は、酸化膜との濡れ性が悪いものであることを特徴とする請求項3又は4に記載の半導体装置。
- 前記酸化膜は、前記配線パターン上における、前記外部電極端子の非形成領域に設けられていることを特徴とする請求項3乃至5の何れか1項に記載の半導体装置。
- 前記外部電極端子は、略球状の樹脂とこれを覆うように形成された半田、又は略球状の金属とこれを覆うように形成された半田よりなることを特徴とする請求項3乃至6の何れか1項に記載の半導体装置。
- 前記略球状の金属は、銅もしくは銅を含む合金からなることを特徴とする請求項7に記載の半導体装置。
- 前記酸化膜は、前記配線パターンにおける、外部電極端子の形成領域に隣り合う領域に設けられていることを特徴とする請求項3乃至8の何れか1項に記載の半導体装置。
- 半導体装置用ウェハの素子形成面上に電極パッドと外部電極端子とを電気的に接続するための配線パターンを形成する工程と、
上記配線パターンにおける、外部電極端子の非形成領域上に、配線パターンを酸化した酸化膜を形成する工程と、
上記外部電極端子を配線パターン上に形成する工程を有することを特徴とする半導体装置の製造方法。 - 請求項10記載の半導体装置の製造方法において、
前記酸化膜を形成する工程は、配線パターンの全表面を酸化して全面酸化膜を形成する工程と、
前記配線パターンにおける、外部電極端子を形成する領域に対応する全面酸化膜部分を除去する工程とを含むことを特徴とする半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法において、
前記除去する工程では、希硫酸を用いることを特徴とする半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法において、
前記除去する工程では、全面酸化膜部分をドライエッチングにより除去することを特徴とする半導体装置の製造方法。 - 請求項10記載の半導体装置の製造方法において、
前記酸化膜を形成する工程は、
前記配線パターンにおける外部電極端子を形成する領域表面に、マスク層を形成する工程と、
前記マスク層を有する配線パターンの表面を酸化して酸化膜を形成する工程とを含むことを特徴とする半導体装置の製造方法。 - 請求項10乃至14の何れか1項に記載の半導体装置の製造方法において、
前記配線パターン表面を加熱によって酸化して、配線パターン表面に酸化膜を形成することを特徴とする半導体装置の製造方法。 - 請求項10乃至14の何れか1項に記載の半導体装置の製造方法において、
前記配線パターン表面を薬液によって処理し、配線パターン表面に酸化膜を形成することを特徴とする半導体装置の製造方法。 - 請求項16に記載の半導体装置の製造方法において、
前記薬液が過酸化水素水であることを特徴とする半導体装置の製造方法。
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JP2004063997A JP4094574B2 (ja) | 2004-03-08 | 2004-03-08 | 半導体装置及びその製造方法 |
KR1020050018513A KR100686677B1 (ko) | 2004-03-08 | 2005-03-07 | 반도체 장치 및 그 제조 방법 |
TW094106818A TWI274531B (en) | 2004-03-08 | 2005-03-07 | Semiconductor device and manufacturing method for the same |
US11/072,238 US20050194686A1 (en) | 2004-03-08 | 2005-03-07 | Semiconductor device and manufacturing method for the same |
CNB2005100545023A CN100372110C (zh) | 2004-03-08 | 2005-03-08 | 半导体器件及其制造方法 |
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Cited By (3)
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JP2009302371A (ja) * | 2008-06-16 | 2009-12-24 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
JP2012160500A (ja) * | 2011-01-31 | 2012-08-23 | Sony Corp | 回路基板、半導体部品、半導体装置、回路基板の製造方法、半導体部品の製造方法及び半導体装置の製造方法 |
JP2017037983A (ja) * | 2015-08-11 | 2017-02-16 | ローム株式会社 | 半導体装置およびその製造方法 |
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JP4219951B2 (ja) * | 2006-10-25 | 2009-02-04 | 新光電気工業株式会社 | はんだボール搭載方法及びはんだボール搭載基板の製造方法 |
JP2010040599A (ja) * | 2008-07-31 | 2010-02-18 | Sanyo Electric Co Ltd | 半導体モジュールおよび半導体装置 |
JP4737466B2 (ja) * | 2009-02-09 | 2011-08-03 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
US8712571B2 (en) * | 2009-08-07 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for wireless transmission of diagnostic information |
TWI771974B (zh) | 2020-04-03 | 2022-07-21 | 韓商Nepes股份有限公司 | 半導體封裝件 |
KR102621743B1 (ko) * | 2020-04-03 | 2024-01-05 | 주식회사 네패스 | 반도체 패키지 및 그 제조방법 |
KR102635846B1 (ko) * | 2020-04-03 | 2024-02-13 | 주식회사 네패스 | 반도체 패키지 및 그 제조방법 |
CN112702848B (zh) * | 2021-03-24 | 2021-05-28 | 成都市克莱微波科技有限公司 | 一种高频柔性微波印制电路板的清洗方法 |
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Cited By (3)
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JP2009302371A (ja) * | 2008-06-16 | 2009-12-24 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
JP2012160500A (ja) * | 2011-01-31 | 2012-08-23 | Sony Corp | 回路基板、半導体部品、半導体装置、回路基板の製造方法、半導体部品の製造方法及び半導体装置の製造方法 |
JP2017037983A (ja) * | 2015-08-11 | 2017-02-16 | ローム株式会社 | 半導体装置およびその製造方法 |
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JP4094574B2 (ja) | 2008-06-04 |
KR20060043439A (ko) | 2006-05-15 |
CN100372110C (zh) | 2008-02-27 |
US20050194686A1 (en) | 2005-09-08 |
TW200601918A (en) | 2006-01-01 |
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