JP2008028324A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2008028324A JP2008028324A JP2006202143A JP2006202143A JP2008028324A JP 2008028324 A JP2008028324 A JP 2008028324A JP 2006202143 A JP2006202143 A JP 2006202143A JP 2006202143 A JP2006202143 A JP 2006202143A JP 2008028324 A JP2008028324 A JP 2008028324A
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- contact hole
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- diffusion layer
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- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 66
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 46
- 239000011229 interlayer Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/76841—Barrier, adhesion or liner layers
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Abstract
【解決手段】選択成長層15が表面に形成されたPMOSトランジスタのシリコン基板11内のソース/ドレイン拡散層上に、PMOS用コンタクトホール20を形成する。この際に、コンタクトホール20がシリコン基板11のソース/ドレイン拡散層内に届くようにエッチングする。コンタクトホール20内の拡散層上及び選択成長層15の側面にGeを選択成長し、熱処理よりSiGe層24とする。NMOSトランジスタのコンタクトホール25を選択成長層16に達するように形成する。コンタクトホール20、25内のSiGe層24及び選択成長層16上にコンタクトプラグ30を形成する。
【選択図】図11
Description
前記層間絶縁膜を貫通し、前記PMOSトランジスタのソース/ドレイン拡散層に達するPMOS用コンタクトホールと、
前記PMOS用コンタクトホールの内部に形成され、前記PMOSトランジスタのソース/ドレイン拡散層内に底部を有するゲルマニウム・シリサイド(SiGe)層と、
前記PMOS用コンタクトホール内で前記SiGe層に接するコンタクトプラグとを備えることを特徴とする。
前記PMOSトランジスタ及びNMOSトランジスタを覆う層間絶縁膜を形成する工程と、
前記層間絶縁膜を貫通し、前記PMOSトランジスタのソース/ドレイン拡散層に達するPMOS用コンタクトホールを形成する工程と、
前記PMOS用コンタクトホールの内部のソース/ドレイン拡散層上にゲルマニウムを堆積する工程と、
前記堆積したゲルマニウムと前記ソース/ドレイン拡散層内のシリコンとを反応させて、ゲルマニウム・シリサイド層(SiGe層)を形成する工程と、
前記PMOS用コンタクトホール内で前記SiGe層に接するコンタクトプラグを形成する工程とを有することを特徴とする。
図1から図11を参照して第1実施形態の半導体装置の製造方法を説明する。はじめに、公知の半導体装置の製造プロセスを用いて、半導体基板(シリコン基板)11上で、分離領域12により区画されたPMOS形成領域(PMOS領域)13及びNMOS形成領域(NMOS領域)14内にそれぞれ、PMOSゲート電極17を含むPMOSトランジスタ、及び、NMOSゲート電極18を含むNMOSトランジスタを形成する。また、PMOS領域13及びNMOS領域14には、それぞれ各トランジスタのソース/ドレイン拡散層上に、選択成長法で堆積されたP+拡散層(不純物シリコン層)15、及び、N+拡散層(不純物シリコン層)16がそれぞれコンタクト層として形成されている。ここで、PMOSトランジスタは、周辺回路領域に、また、NMOSトランジスタは、周辺回路領域及びメモリセル領域の双方に形成する。その後に、これらトランジスタを覆って、層間絶縁膜19を堆積する(図1)。
以下、図16から図26を参照して、第2実施形態の製造方法を説明する。はじめに、通常の半導体装置の製造プロセスを用いて、図16に示すように、図1の選択成長層15、16を有しない以外は、図1に示す構造と同様な構造を有するPMOSトランジスタ及びNMOSトランジスタを形成し、ゲート電極17、18を覆う層間絶縁膜19を堆積する。次に、通常のコンタクトホールの開口プロセスを用いて、シリコン基板11内のPMOS領域13のソース/ドレイン拡散層(P+拡散層)上にPMOS用コンタクトホール20を開口する(図17)。このとき、コンタクトホール20の底部は、ゲート酸化膜21の底面よりも下になるようにする。
本発明を6F2のセルレイアウトを有する微細構造のDRAM装置に適用することが出来る。図27は、6F2セルレイアウト構造を有するメモリセル領域の平面構造を例示している。ビット線32の間隔は3Fであり、ワード線(トランスファゲート)33の間隔は2Fである。各フィールド活性領域35上には、それぞれがLDDサイドウオール34を有する2本のワード線33が延びており、双方のワード線33の間にはソース拡散層が、双方のワード線33の外側にはドレイン拡散層がそれぞれ形成される。ソース/ドレイン拡散層には、それぞれコンタクトホール25が開口し、そのコンタクトホール25の底部には、選択成長法で形成されたN+拡散層16が形成されている。ビット線32は、ワード線33とほぼ直交して延びており、ソース拡散層上に形成されたコンタクトホール25内のコンタクトプラグと接続している。各ドレイン拡散層は、図示しないキャパシタの下部電極に接続される。ソース/ドレイン拡散層に接続するコンタクトホール25は、円形状のコンタクトホールであり、これは周辺回路領域のNMOSトランジスタも同様である。周辺回路領域のPMOSトランジスタのコンタクトホールは、図12に示した形状の楕円形状のコンタクトホールである。
12:分離領域
13:PMOS形成領域
14:NMOS形成領域
15:選択成長P+拡散層
16:選択成長N+拡散層
17:PMOSゲート電極
18:NMOSゲート電極
19:層間絶縁膜
20、20A、20B:コンタクトホール
21:ゲート酸化膜
22:B注入層
23:Ge成長層
24:SiGe層
25、25A、25B:コンタクトホール
26:P注入層
27:Ti/TiN積層膜
28:Tiシリサイド層
29:W−CVD膜
30:プラグ
31:活性領域
32:ビット線
33:ワード線(ゲート電極)
34:LDDサイドウオール
35:フィールド活性領域
Claims (13)
- シリコン基板上に形成されるPMOSトランジスタと、該PMOSトランジスタを覆う層間絶縁膜とを有する半導体装置において、
前記層間絶縁膜を貫通し、前記PMOSトランジスタのソース/ドレイン拡散層に達するPMOS用コンタクトホールと、
前記PMOS用コンタクトホールの内部に形成され、前記PMOSトランジスタのソース/ドレイン拡散層内に底部を有するゲルマニウム・シリサイド(SiGe)層と、
前記PMOS用コンタクトホール内で前記SiGe層に接するコンタクトプラグとを備えることを特徴とする半導体装置。 - 前記PMOS用コンタクトホールの底部が、前記PMOSトランジスタのゲート酸化膜の底面よりも低い位置にある、請求項1に記載の半導体装置。
- 前記シリコン基板上に形成されるNMOSトランジスタと、前記層間絶縁膜を貫通し、前記NMOSトランジスタのソース/ドレイン拡散層に達するNMOS用コンタクトホールを更に備え、該NMOS用コンタクトホールの底部は、前記PMOS用コンタクトホールの底部よりも浅い位置にある、請求項1又は2に記載の半導体装置。
- 前記PMOS用コンタクトホールが楕円形状を有し、前記NMOS用コンタクトホールが円形状を有する、請求項1〜3の何れか一に記載の半導体装置。
- 前記PMOS用コンタクトホールが、複数の楕円形状のコンタクトホールを含む、請求項4に記載の半導体装置。
- 前記シリコン基板上に形成されるNMOSトランジスタと、前記PMOSトランジスタ及びNMOSトランジスタのソース/ドレイン拡散層上に、選択成長法によって堆積された不純物含有シリコン層と、前記層間絶縁膜を貫通し、前記NMOSトランジスタの不純物含有シリコン層に接するコンタクトプラグを収容するNMOS用コンタクトホールとを更に備え、前記PMOS用コンタクトホールは、前記不純物含有シリコン層を貫通して前記ソース/ドレイン拡散層に接している、請求項1に記載の半導体装置。
- 前記SiGe層は、前記PMOS用コンタクトホールの側面で前記不純物含有シリコン層に接している、請求項6に記載の半導体装置。
- シリコン基板内にそれぞれソース/ドレイン拡散層を有するPMOSトランジスタ及びNMOSトランジスタを形成する工程と、
前記PMOSトランジスタ及びNMOSトランジスタを覆う層間絶縁膜を形成する工程と、
前記層間絶縁膜を貫通し、前記PMOSトランジスタのソース/ドレイン拡散層に達するPMOS用コンタクトホールを形成する工程と、
前記PMOS用コンタクトホールの内部のソース/ドレイン拡散層上にゲルマニウムを堆積する工程と、
前記堆積したゲルマニウムと前記ソース/ドレイン拡散層内のシリコンとを反応させて、ゲルマニウム・シリサイド層(SiGe層)を形成する工程と、
前記PMOS用コンタクトホール内で前記SiGe層に接するコンタクトプラグを形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記層間絶縁膜を形成する工程に先立って、前記ソース/ドレイン拡散層上に不純物含有シリコン層を選択的に成長する工程を更に備える、請求項8に記載の半導体装置の製造方法。
- 前記層間絶縁膜を貫通し、前記NMOSトランジスタのソース/ドレイン拡散層上に形成された不純物含有シリコン層に達するNMOS用コンタクトホールを形成する工程を更に有する、請求項9に記載の半導体装置の製造方法。
- 前記NMOS用コンタクトホールを形成する工程では、前記PMOSトランジスタ及びNMOSトランジスタのゲート電極上にゲート用コンタクトホールを更に形成する、請求項10に記載の半導体装置の製造方法。
- 前記PMOS用コンタクトホールが楕円形状を有し、前記NMOS用コンタクトホールが円形状を有する、請求項10又は11に記載の半導体装置の製造方法。
- 前記PMOS用コンタクトホールが、複数の楕円形状のコンタクトホールを含む、請求項12に記載の半導体装置の製造方法。
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US7795689B2 (en) | 2010-09-14 |
US20080023772A1 (en) | 2008-01-31 |
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