JP2008004929A5 - - Google Patents
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- Publication number
- JP2008004929A5 JP2008004929A5 JP2007136709A JP2007136709A JP2008004929A5 JP 2008004929 A5 JP2008004929 A5 JP 2008004929A5 JP 2007136709 A JP2007136709 A JP 2007136709A JP 2007136709 A JP2007136709 A JP 2007136709A JP 2008004929 A5 JP2008004929 A5 JP 2008004929A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor region
- gate electrode
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 5
- 238000009832 plasma treatment Methods 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007136709A JP5235333B2 (ja) | 2006-05-26 | 2007-05-23 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006147467 | 2006-05-26 | ||
| JP2006147467 | 2006-05-26 | ||
| JP2007136709A JP5235333B2 (ja) | 2006-05-26 | 2007-05-23 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012181772A Division JP2013012755A (ja) | 2006-05-26 | 2012-08-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008004929A JP2008004929A (ja) | 2008-01-10 |
| JP2008004929A5 true JP2008004929A5 (enExample) | 2010-07-15 |
| JP5235333B2 JP5235333B2 (ja) | 2013-07-10 |
Family
ID=39009027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007136709A Expired - Fee Related JP5235333B2 (ja) | 2006-05-26 | 2007-05-23 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5235333B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| KR101634411B1 (ko) | 2008-10-31 | 2016-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 표시 장치 및 전자 장치 |
| KR102195170B1 (ko) * | 2009-03-12 | 2020-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011007682A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| WO2011145484A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| JP5668917B2 (ja) * | 2010-11-05 | 2015-02-12 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| FR2987682B1 (fr) * | 2012-03-05 | 2014-11-21 | Soitec Silicon On Insulator | Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure |
| JP6059566B2 (ja) * | 2012-04-13 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20150029000A (ko) * | 2012-06-29 | 2015-03-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6125176B2 (ja) * | 2012-08-27 | 2017-05-10 | シャープ株式会社 | 高透過率保護膜作製方法および半導体発光素子の製造方法 |
| JP6780414B2 (ja) * | 2016-09-29 | 2020-11-04 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| KR102637201B1 (ko) * | 2018-03-01 | 2024-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP2019175913A (ja) * | 2018-03-27 | 2019-10-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299656A (ja) * | 1992-04-20 | 1993-11-12 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
| JPH07321106A (ja) * | 1994-05-24 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 酸化シリコン薄膜の改質方法および薄膜トランジスタの製造方法 |
| JP2001230419A (ja) * | 2000-02-15 | 2001-08-24 | Hitachi Ltd | 液晶表示装置の製造方法及び製造装置及び液晶表示装置 |
| JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
| JP4334225B2 (ja) * | 2001-01-25 | 2009-09-30 | 東京エレクトロン株式会社 | 電子デバイス材料の製造方法 |
| JP2004207590A (ja) * | 2002-12-26 | 2004-07-22 | Ｆａｓｌ Ｊａｐａｎ 株式会社 | 半導体装置の製造方法 |
-
2007
- 2007-05-23 JP JP2007136709A patent/JP5235333B2/ja not_active Expired - Fee Related
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