JP5235333B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5235333B2 JP5235333B2 JP2007136709A JP2007136709A JP5235333B2 JP 5235333 B2 JP5235333 B2 JP 5235333B2 JP 2007136709 A JP2007136709 A JP 2007136709A JP 2007136709 A JP2007136709 A JP 2007136709A JP 5235333 B2 JP5235333 B2 JP 5235333B2
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- film
- insulating film
- semiconductor
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- gate electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 369
- 238000000034 method Methods 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 230000003647 oxidation Effects 0.000 claims description 182
- 238000007254 oxidation reaction Methods 0.000 claims description 182
- 239000012535 impurity Substances 0.000 claims description 176
- 229910052760 oxygen Inorganic materials 0.000 claims description 115
- 239000001301 oxygen Substances 0.000 claims description 115
- 239000001257 hydrogen Substances 0.000 claims description 112
- 229910052739 hydrogen Inorganic materials 0.000 claims description 112
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 104
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- 229910052710 silicon Inorganic materials 0.000 claims description 100
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- 239000010703 silicon Substances 0.000 claims description 96
- 238000003860 storage Methods 0.000 claims description 71
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 48
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- 238000009832 plasma treatment Methods 0.000 claims description 39
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 17
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- 238000005259 measurement Methods 0.000 claims description 16
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 125000001424 substituent group Chemical group 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 11
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- 239000011651 chromium Substances 0.000 description 10
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
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- 239000000047 product Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 8
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- 125000001153 fluoro group Chemical group F* 0.000 description 8
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 6
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- 125000000217 alkyl group Chemical group 0.000 description 4
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- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
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- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007136709A JP5235333B2 (ja) | 2006-05-26 | 2007-05-23 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006147467 | 2006-05-26 | ||
| JP2006147467 | 2006-05-26 | ||
| JP2007136709A JP5235333B2 (ja) | 2006-05-26 | 2007-05-23 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012181772A Division JP2013012755A (ja) | 2006-05-26 | 2012-08-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008004929A JP2008004929A (ja) | 2008-01-10 |
| JP2008004929A5 JP2008004929A5 (enExample) | 2010-07-15 |
| JP5235333B2 true JP5235333B2 (ja) | 2013-07-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007136709A Expired - Fee Related JP5235333B2 (ja) | 2006-05-26 | 2007-05-23 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5235333B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| KR101634411B1 (ko) | 2008-10-31 | 2016-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 표시 장치 및 전자 장치 |
| KR102195170B1 (ko) * | 2009-03-12 | 2020-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011007682A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| WO2011145484A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| JP5668917B2 (ja) * | 2010-11-05 | 2015-02-12 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| FR2987682B1 (fr) * | 2012-03-05 | 2014-11-21 | Soitec Silicon On Insulator | Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure |
| JP6059566B2 (ja) * | 2012-04-13 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20150029000A (ko) * | 2012-06-29 | 2015-03-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6125176B2 (ja) * | 2012-08-27 | 2017-05-10 | シャープ株式会社 | 高透過率保護膜作製方法および半導体発光素子の製造方法 |
| JP6780414B2 (ja) * | 2016-09-29 | 2020-11-04 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| KR102637201B1 (ko) * | 2018-03-01 | 2024-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP2019175913A (ja) * | 2018-03-27 | 2019-10-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
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| JPH05299656A (ja) * | 1992-04-20 | 1993-11-12 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
| JPH07321106A (ja) * | 1994-05-24 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 酸化シリコン薄膜の改質方法および薄膜トランジスタの製造方法 |
| JP2001230419A (ja) * | 2000-02-15 | 2001-08-24 | Hitachi Ltd | 液晶表示装置の製造方法及び製造装置及び液晶表示装置 |
| JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
| JP4334225B2 (ja) * | 2001-01-25 | 2009-09-30 | 東京エレクトロン株式会社 | 電子デバイス材料の製造方法 |
| JP2004207590A (ja) * | 2002-12-26 | 2004-07-22 | Ｆａｓｌ Ｊａｐａｎ 株式会社 | 半導体装置の製造方法 |
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